Analysis of the effect of annealing on the photoluminescence spectra of Cu ion implanted ZnS nanoparticles

In the present study, we report the photoluminescence (PL) study of nanoparticles of ZnS implanted with Cu⁺ ions at the doses of 5×10¹⁴, 1×10¹⁵ and 5×10¹⁵ ions/cm² and annealed at 200 and 300 °C. The photoluminescence spectra of the samples implanted at lower doses of 5×10¹⁴ and 1×10¹⁵ ions/cm² and annealed at 200 and 300 °C showed peaks at around 406, 418 and 485 nm. The PL emission peak at 485 nm was attributed to the transition of electrons from conduction band of ZnS to the impurity level formed by the implanted Cu⁺ ions. In the PL spectrum of the sample implanted at the highest dose of 5×10¹⁵ ions/cm², in addition to the emission peaks observed in the PL spectra of the samples implanted at lower doses, a peak at around 525 nm, the intensity of which decreased with increase in the annealing temperature, was observed. The emission peak at 525 nm was attributed to the transitions between sulfur and zinc vacancy levels. The full width at half maximum (FWHM) of the emission peak at 406 nm was observed to decrease with increase in annealing temperature, indicating lattice reconstruction. The observation of copper ion impurity related peak at 485 nm in the PL spectra of samples of the present study indicated that the doping of copper ions into the ZnS lattice is achievable by implanting Cu⁺ ions followed by annealing.     

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar 后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar 注入后,其光致发光谱中均出现了新的位于506 nm处的发光峰;真空和空气气氛下的退火均对样品在506 nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响.     

Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

Mn ions were implanted into metal organic chemical vapour deposition (MOCVD)-grown GaN with dose ranging from 10¹⁴ to 5×10¹⁶ cm⁻². Isochronal annealing at 800 and 850 °C has been carried out after implantation of the samples. Photoluminescence measurements were carried out on the implanted samples before and after annealing. A peak found at 3.34 eV in the spectra of implanted samples after annealing at 850 °C is attributed to the stacking faults. Blue and green luminescence bands have been observed suppressed and an oxygen-related peak appeared at 3.44 eV in the PL spectra. The suppression of blue and green luminescence bands has been assigned to dissociation of V_GaO_N complex. Near-band-edge (NBE) peak exhibited a blue shift after 800 °C anneal and then red shift to restore its original energy position when annealed at 850 °C.     

Microstructural evolution upon annealing in Ar-implanted Si

The annealing effects of crystalline silicon (Si) implanted with argon (Ar) ions at a dose of 2 × 10¹⁶ Ar⁺/cm² at room temperature and subsequently annealed at 400-1100 °C for 30 min were investigated. The samples were analyzed by transmission electron microscopy and Raman spectroscopy. Before and after annealing up to 600 °C, an amorphous layer is formed but Ar bubbles are not observed in the damage layer. After annealing at 800 °C, argon bubbles are observed together with extended defects. The damage layer evolves into a polycrystalline structure. After annealing at 1100 °C; exfoliation occurs on the sample surface, and microtwin lamellas form in the damage layer. Raman scattering revealed that a strong recrystallization occurs from 600 °C to 800 °C. The results were compared with the case of helium implantation, with particular focus on bubble formation mechanisms.     

Zn离子注入和退火对ZnO薄膜光学性能的影响

 利用溶胶凝胶方法在石英玻璃衬底上制备了ZnO薄膜，将能量56 keV、剂量1×10¹⁷ cm^-2的Zn离子注入到薄膜中。离子注入后，薄膜在500~900 ℃的氩气中退火，利用X射线衍射谱、光致发光谱和光吸收谱研究了离子注入和退火对ZnO薄膜结构和光学性质的影响。结果显示：衍射峰在约700 ℃退火后得到恢复；当退火温度小于600 ℃时，吸收边随着退火温度的提高发生蓝移，超过600 ℃时，吸收边随着退火温度的提高发生红移；近带边激子发光和深能级缺陷发光都随退火温度的提高而增强。     

氮气退火对二氧化钛薄膜光学性能的影响

 提出了一种利用离子注入和后续退火制备氮掺杂TiO₂薄膜的方法。首先在室温下向石英玻璃中注入Ti离子,随后在氮气中退火到900 ℃,从而制备了氮掺杂的玻璃基TiO₂薄膜。SRIM2006程序模拟和卢瑟福背散射谱（RBS）研究表明注入离子从样品表面开始呈高斯分布,实验结果和模拟结果吻合很好。X射线光电子能谱（XPS）研究结果表明注入态样品中形成了金属Ti和TiO₂,900 ℃退火后金属Ti转变成TiO₂,同时N原子替代少量的晶格O原子形成了O－Ti－N化合物。紫外-可见吸收光谱（UV-Vis）结果显示,当退火温度至500 ℃时,在吸收光谱中开始出现TiO₂的吸收边,随退火温度升高到900 ℃,由于O－Ti－N化合物形成,TiO₂的吸收边从3.98 eV红移到3.30 eV,TiO₂吸收边末端延伸到可见光区,在可见光区的吸收强度明显增加。     

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar⁺后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar⁺注入后,其光致发光谱中均出现了新的位于506nm处的发光峰;真空和空气气氛下的退火均对样品在506nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响. 关键词： 2O₃')" href="#">Al₂O₃ 离子注入 退火 光致发光谱     

Radiation damage and annealing in Sb implanted diamond

The predicted, but as yet unobserved, intradonor absorption spectrum of the hydrogenic-like donors in CdF₂ crystals is presented. The role of phonon coupling in these spectra is discussed. From the data on the insulator-semiconductor transition in CdPbF₂ it is concluded that the dominant factor in convertibility of CdF₂ to a semiconducting state is its electron affinity, the largest among the fluorites (x≈4 eV).     

Statistical analysis of micro-luminescence maps of implanted optical centers in diamond

We report on an approach to determine the number of optical emitters based on establishing the proper relationship between the statistics of implanted ions and the signal from optical centers (e.g. photoluminescence) collected at different points in the sample. Knowing the number of implanted ions, one can estimate the probability for an ion to create an optical center—the conversion efficiency. The micro-luminescence mapping and statistical analyses were performed on a model Xe optical center in diamond and the conversion efficiency was estimated to be about 30%.     

The effect of annealing under hydrostatic pressure on the visible photoluminescence from si-ion implanted SiO2 films

We have studied the influence of the hydrostatic pressure during annealing on the intensity of the visible photoluminescence (PL) from thermally grown SiO₂ films irradiated with Si⁺ ions. Post-implantation anneals have been carried out in an Ar ambient at temperatures T_a of 400°C and 450°C for 10 h and 1130°C for 5 h at hydrostatic pressures of 1 bar–15 kbar. It has been found that the intensity of the 360, 460 and 600 nm PL peaks increases with rising hydrostatic pressure during low-temperature annealing. The intensity of the short-wavelength PL under conditions of hydrostatic pressure continues to rise even at T_a=1130°C. Increasing T_a leads to a shift in the PL spectra towards the ultraviolet range. The results obtained have been interpreted in terms of enhanced, pressure-mediated formation of ≡Si–Si≡ centres and small Si clusters within metastable regions of the ion-implanted SiO₂.     

退火对He注入及随后208 Pb27+辐照的Al2O3单晶PL谱的影响

利用高能离子研究了110 keV的He+注入Al2O3单晶及随后230 MeV的208pb27+辐照并在不同温度条件下退火样品的光致发光的特性.从测试结果可以清楚地看到在375 nm,390 nm,413 nm和450 nm出现了强烈的发光峰.经过600 K退火2 h后测试结果显示,390 nm发光峰增强剧烈,而别的发光峰显示不明显.在900 K退火条件下,390 nm的发光峰开始减弱相反在510 nm出现了较强的发光峰,到1100 K退火完毕后390 nm的发光峰完全消失,而510 nm的发光峰相对增强.从辐照样品的FTIR谱中看到,波数在460-510 cm-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al2O3振动吸收峰消失,说明Al2O3振动模式被完全破坏.1000-1300cm-1之间为Al-O-Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动.退火后的FTIR谱变化不大.     

退火对He注入及随后208Pb27+辐照的Al2O3单晶PL谱的影响

利用高能离子研究了110 keV 的He⁺注入Al₂O₃单晶及随后230 MeV的²⁰⁸Pb²⁷⁺辐照并在不同温度条件下退火样品的光致发光的特性. 从测试结果可以清楚地看到在375 nm，390 nm，413 nm 和450 nm 出现了强烈的发光峰. 经过600 K退火2 h后测试结果显示，390 nm发光峰增强剧烈，而别的发光峰显示不明显. 在900 K退火条件下，390 nm的发光峰开始减弱相反在510 nm出现了较强的发光峰，到1100 K退火完毕后390 nm的发光峰完全消失，而510 nm的发光峰相对增强. 从辐照样品的FTIR谱中看到，波数在460—510 cm^-1间的吸收是振动模式，经过离子辐照后，吸收带展宽，随着辐照量的增大，Al₂O₃振动吸收峰消失，说明Al₂O₃振动模式被完全破坏. 1000—1300 cm^-1之间为Al-O-Al桥氧的伸缩振动模式，辐照后吸收带向高波数方向移动. 退火后的FTIR谱变化不大.     

退火及超声处理对ZnO薄膜结构和发光特性的影响

 利用对向靶射频磁控溅射系统在Si（100）衬底上制备了ZnO薄膜,并对其进行了退火和超声处理。采用XRD,AFM和光致发光谱对其结构、表面形貌和性能进行了分析。结果表明：沉积态ZnO薄膜（002）择优取向稍差,尺寸较小,表面粗糙度较大。随退火温度的升高,颗粒粒径增大,样品的取向性和结晶度都明显变好,应力状态由压应力转变为张应力,粗糙度降低。超声处理缓解了薄膜中的张应力,晶粒尺寸更趋增大;用波长为280 nm的激发光激发薄膜时,沉积态薄膜无发光峰存在;随着退火温度升高,出现了一个378 nm的紫外峰和一个398 nm的紫峰;紫外峰峰值强度随退火温度升高不断增强,而紫峰的峰位随退火温度升高基本不发生变化,峰值强度增强;700 ℃退火后的薄膜经超声处理后,发光谱中出现了峰值波长为519 nm的绿色发光带。     

Influence of annealing on the concentration profiles of boron implantations in silicon

The influence of annealing on the concentration profiles of boron implanted into silicon with does of 10¹⁴ ions/cm² up to 10¹⁶ ions/cm² and an energy of 70 keV was studied. The concentration profiles were measured with Secondary Ion Mass Spectrometry (SIMS). The broadening of the concentration profiles during annealing can be described as a superposition of effects resulting from a relatively immobile and a mobile boron fraction. The properties of the immobile boron fraction were studied by measuring the influence of a boron implantation on the distribution of a homogeneous boron background dope. From these experiments it was concluded that the immobile boron fraction consists of boron precipitates. The properties of the mobile fraction were studied from concentration profiles that were obtained after annealing during different periods at the same temperature. It was found that during the initial stage of the annealing process a fast broadening of the profile occurs; this was assumed to be due to an interstitial type boron diffusion. After prolonged annealing the much slower substitutional type diffusion prevails, due to trapping of the interstitial boron atoms by vacancies. The reliability of the SIMS method, as applied to profile measurements, was checked for the high boron doses used in this investigation. Excessive boron precipitates, obtained after annealing of a high dose, such as 10¹⁶ ions/cm² at about 1000°C, appear to give some increase of the ion yield.     

The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation

The influence of P ion doping on the photoluminescence (PL) of the system of nanocrystals in SiO₂ matrix (SiO₂:Si) both without annealing and after annealing at various temperatures (provided before and after additional P implantation) is investigated. The Si and P implantation was carried out with ion energies of 150 keV and doses Φ_Si=10¹⁷ cm⁻² and Φ_P=(0.1–300)×10¹⁴ cm⁻² (current density j3 μAcm⁻²). The system after Si implantation was formed at 1000°C and 1100°C (2 h). For the case of SiO₂:Si system as-implanted by P, the intensity of PL was drastically quenched, but partially retained. As for the step-by-step annealing (at progressively increased temperatures) carried out after P implantation, the sign and degree of doping effect change with annealing temperature. The possible mechanisms of these features are discussed.     

Effect of thermal annealing on nitrogen implanted epitaxial Fe films

Nitridated iron is a promising material for potential applications in permanent magnets. Recent work on stabilization of nitridated iron in a foil form through nitrogen ion implantation and annealing motivates to study effect of thermal annealing on the surface of nitrogen-implanted iron. In this work, we show effect of annealing on chemical state and magnetism of nitrogen implanted epitaxial iron films. It is observed that nitrogen in the lattices only stays at the lower temperatures than 450 °C. In addition, significant reduction and lattice modification are taken placed, when the film is annealed at 450 °C. The increases of saturation magnetization and coercivity, where it is annealed at 450 °C, are likely to be triggered by reduction of oxygen contents at the surface and thinning of Fe₂O₃.     

Enhancement of saturation magnetization in Cr-ion implanted silicon by high temperature annealing

Magnetic properties and microstructure of Cr-implanted Si have been investigated by alternating gradient magnetometer (AGM), superconducting quantum interference device (SQUID) magnetometer, and transmission electron microscopy (TEM). p-Type (1 0 0) Si wafers were implanted at 200 keV at room temperature with a dosage of 1 × 10¹⁶ cm⁻² Cr ions and then annealed at 600-900 °C for 5 min. The effect of annealing on the structure and magnetic properties of Cr-implanted Si is studied. The as-implanted sample shows a square M-H loop at low temperature. Magnetic signal becomes weaker after short time annealing of the as-implanted sample at 600 °C, 700 °C, and 800 °C. However, the 900 °C annealed sample exhibits large saturation magnetization at room temperature. TEM images reveal that the implanting process caused amorphization of Si, while annealing at 900 °C led to partial recovery of the crystal. The enhancement of saturation magnetization can be explained by the redistribution and accumulation of Cr atoms in the vacancy-rich region of Si during annealing.     

退火对ZnO:Al薄膜光致发光性能的影响

 采用溶胶-凝胶工艺在石英衬底上制备ZnO:Al（AZO）薄膜,通过不同温度的退火处理,研究了退火对AZO薄膜结构和光致发光特性的影响。XRD图谱表明：所制备的薄膜具有c轴高度择优取向,随着退火温度的升高,(002)峰的强度逐渐增强,同时(002)峰的半高宽逐渐减小,表明晶粒在不断增大。未退火样品的光致发光（PL）谱由361 nm附近的紫外带边发射峰和500 nm附近的深能级发射峰组成。样品经退火后,以500 nm为中心的绿带发射逐渐减弱,而带边发射强度有所增强,并且逐渐红移到366 nm附近,与吸收边移动的测试结果相吻合。对经过不同时间退火的样品分析表明,AZO薄膜的发光特性与退火时间也有很大关系,时间过短可见波段的发射较强,但时间过长会使晶粒发生团聚,导致紫外发射峰强度减弱。     

Chemical surface composition of the polyethylene implanted by Ag ions studied by phase imaging atomic force microscopy

High density polyethylene (HDPE) has been modified by Ag⁺ ion implantation with the energy of 60 keV. The total amount of implanted silver ions was 1, 5 and 12 × 10¹⁵ ions/cm². The surface topography was observed by atomic force microscopy (AFM), while the surface composition changes were detected using phase imaging AFM. Surface topography changes were studied in detail using 3D surface parameters analyses. The average roughness decreased for the implanted HDPE indicating the flattening of the surface. Phase AFM images indicated the homogenization of the polyethylene during ion implantation, while histogram analyses confirmed the change in surface composition.     

Structural and photoluminescence properties of Si nanoclusters obtained by ion implantation into Si3N4 films

In the present paper we report structural and photoluminescence (PL) results from samples obtained by Si implantation into stoichiometric silicon nitride (Si₃N₄) films. The Si excess was introduced in the matrix by 170 keV Si implantation performed at different temperatures with a fluence of Φ=1×10¹⁷ Si/cm². The annealing temperature was varied between 350 and 900 °C in order to form the Si precipitates. PL measurements, with a 488 nm Ar laser as an excitation source, show two superimposed broad PL bands centered around 760 and 900 nm. The maximum PL yield is achieved for the samples annealed at 475 °C. Transmission electron microscopy (TEM) measurements show the formation of amorphous nanoclusters and their evolution with the annealing temperature.