RHEED wave functions and the effect of reconstruction on secondary electron emission from the Si(1 0 0) surface

The effect of surface reconstruction on contrast in scanning electron microscopy of the Si(1 0 0)-2 × 1 surface is investigated. A theory of the initial secondary production rate is developed and an upper bound on the rate is shown to depend on the product of the integrated intensities of the initial and final RHEED states. These states are calculated with a reflection matrix method and their depth dependence is investigated. The results are used to analyse scanning electron microscopy contrast in images of 1 × 2- and 2 × 1-regions of the Si(1 0 0)-2 × 1 surface reported by Watanabe et al. The calculated integrated intensities are consistent with the experimental images and with the experimentally observed dependence of the contrast on the azimuth of the incident electron beam. This supports the idea that the observed contrast is caused by the effect of surface reconstruction on the RHEED states.     

In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(1 1 1):H and GaAs(0 0 1) and corrosion of Cu3Au(1 1 1)

Electrochemical deposition of Cu and Co in monolayer amounts on hydrogen terminated Si(1 1 1) was studied ex situ and in situ by X-ray techniques. The X-ray beam was found to have a strong effect on the deposit causing desorption under the beam. Cu deposition on GaAs(0 0 1) from UHV is compared with electrodeposited Cu on the same surface, elucidating similarities and differences of electrochemical and UHV deposition. Roughening due to corrosion of Cu₃Au(1 1 1) is observed by crystal truncation scattering. The observed behaviour of passivation of this surface is explained by the formation of Au clusters, increasingly covering the surface at higher oxidation potential.     

RHEED intensity oscillation of C60 growth on GaAs substrates

Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C₆₀ layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C₆₀ layers, suggesting that C₆₀ layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C₆₀ layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C₆₀ molecules. This phenomenon is explained by the model that C₆₀ absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.     

Focused ion beam induced swelling in MgO(0 0 1)

The interplay between swelling and milling phenomena in determining the morphology of Focused Ion Beam (FIB) -processed MgO(0 0 1) was investigated by atomic force microscopy. At the early stages of ion irradiation, before milling erosion is observed, MgO shows a relevant swelling behaviour with protrusion of the bombarded areas up to 6 nm for a dose of 5 × 10¹⁶ ions cm⁻². The effect is mainly ascribed to subsurface defect accumulation, while the low Ga ions concentration, as measured by in-depth Auger analysis, seems to exclude a contribution from ion implantation. In order to explain and control the morphology of Fe/NiO FIB patterned sub-micron structures on MgO substrates, we have also investigated FIB effects on Fe(0 0 1) and NiO(0 0 1) single crystals. Absent or negligible swelling has been observed on these materials.     

Growth and morphology of Cobalt thin films on Pd(1 1 1)

We report on the growth of thin Co films on Pd(1 1 1) at three different temperatures 180 K, 300 K, and 550 K. The structure and morphology was determined by scanning tunneling microscopy and low energy electron diffraction. The growth mode was found to vary with temperature. For 180 K and 300 K, we observed a tendency to double layer growth for the initial layers while at elevated temperatures, the initial film grows in single layer. For most conditions, non-ideal three-dimensional growth was observed. Two-dimensional growth was only found for growth temperature of 550 K and coverages above 5 ML. Depending on temperature, the Co islands at low coverages exhibit three principally different shapes: dendritic at 180 K, hexagonal at 300 K and triangular at 550 K. For growth at 550 K and coverages above 5 ML, the islands changed to an irregular shape. This transition is most likely responsible for the transition to 2D growth. Further, the large strain is relaxed by the creation of a dislocation network with mixed fcc and hcp stacking. Depending on the temperature and coverage, a hexagonal or a triangular network was observed. Finally, we have investigated the effect of annealing Co films prepared at 180 K and 300 K. Heating to 490 K leads to coarsening and intermixing.     

Observation of magnetic domains in undoped ZnO grains at room temperature

The present study reports the room temperature ferromagnetism in undoped ZnO thin films grown by PVD method. The 500 nm film with small (90 nm) ZnO grains possess isolated magnetic domains with coercivity of 520 Oe. However, long range magnetic ordering with smaller coercivity of 230 Oe is observed for 1000 nm film. The long range ordering is caused by the reduction in domain wall pinning effect due to the presence of bigger (270 nm) ZnO grains. PL measurements show that these grains are semiconducting in nature. Results presented here suggest that oxygen vacancies at the surface may be responsible for the observed ferromagnetism.     

Optimization of spin-valve parameters for magnetic bead trapping and manipulation

Magneto-optic Kerr effect (MOKE) and magnetoresistance (MR) measurements were used to measure the switching characteristics of spin-valve (SV) arrays currently being developed to trap and release superparamagnetic beads within a fluid medium. The effect of SV size on switching observed by MOKE showed that a 1 μm×8 μm SV element was found to have optimal switching characteristics. MR measurements on a single 1 μm×8 μm SV switched with either an external applied magnetic field or a local magnetic field generated by an integrated write wire (current density ranging from 10⁶ to 10⁷ A/cm²) confirmed the MOKE findings. The 1 μm×8 μm SV low field switching was observed to be +8 and −2 mT with two stable states at zero field; the high field switching was observed to be −18 mT. The low switching fields and the large magnetic moment of the SV trap along with our observation of minimal magnetostatic effects for dense arrays are necessary design characteristics for high-force, “switchable-magnet,” microfluidic bead trap applications.     

Electrical conductivity and phase transformations in the composite ionic conductors AgI : α-Al2O3 prepared via a high-pressure route

Silver ion conducting composites of the general formula xAgI : (1 − x)α-Al₂O₃, where 0.2 ≤ x ≤ 0.8 (vol fraction) were prepared using a high-pressure synthesis route (T = 400 °C, p = 7.5 GPa). The microstructure of as-received rigid, non-brittle and dense samples was investigated by SEM. Other studies — DSC, XRD and impedance spectroscopy, were done as a function of temperature in the 20-200 °C temperature range. Close correlations were observed between the temperature dependences of the XRD patterns, the electrical conductivity and events seen on DSC traces. It was found out that the electrical conductivity at room temperature of all as-received composite materials was higher (by a factor between 7 and 100, depending on composition) than that measured after the heating-cooling cycle. This effect and other observed correlations were explained referring to the residual stress concept.     

Charge transfer in the atomic structure of Ge (1 0 5)

The atomic structure and charge transfer on the Ge (1 0 5) surface formed on Si substrates are studied using scanning tunneling microscopy and spectroscopy (STM and STS). The bias-dependent STM images of the whole Ge (1 0 5) facets formed on a Ge “hut” structure on Si (0 0 1) are observed, which are well explained by the recently confirmed structure model. The local surface density of states on the Ge (1 0 5) surface is measured by STS. The localization of the electronic states expected from charge transfer mechanism is observed in the dI/dV spectra. The surface band gap is estimated as 0.8-0.9 eV, which is even wider than the bulk bandgap of Ge, indicating the strong charge transfer effect to make the dangling bonds stable. The shape of normalized tunnel conductance agrees with the theoretical band structure published recently by Hashimoto et al.     

Synergetic effect between ion energy and sample temperature in the formation of distinct dot pattern on Si(1 1 0) by ion-sputter erosion

We observed a synergetic effect between ion energy and sample temperature in the formation of distinct dot pattern on Si(1 1 0) by Ar⁺ ion sputtering. The ion flux was 20 μA/cm², a value smaller than those used in preceding reports by one or two orders of magnitude. In experiments, the ion energy was from 1 to 5 keV, and the temperature from room temperature to 800 °C. A phase diagram indicating the ranges of ion energy and temperature within which distinct dot patterns can be achieved has been obtained. Data analyses and simulation results reveal that the synergetic effect is consistent with the effect of the Ehrlich-Schwoebel step-edge barrier, rather than the Bradley-Harper model.     

Study of S ion-assisted sulfurization of n-GaAs (1 0 0) surface

The chemical structure and site location of sulfur atoms on n-GaAs (1 0 0) surface treated by bombardment of S⁺ ions over their energy range from 10 to 100 eV have been studied by X-ray photoelectron spectroscopy and low energy electron diffraction. The formation of Ga-S and As-S species on the S⁺ ion bombarded n-GaAs surface is observed. An apparent donor doping effect is observed for the n-GaAs by the 100 eV S⁺ ion bombardment. It is found that the S⁺ ions with higher energy are more effective in the formation of Ga-S species, which assists the n-GaAs (1 0 0) surface in reconstruction into an ordered (1 × 1) structure upon subsequent annealing. The treatment is further extended to repair Ar⁺ ion damaged n-GaAs (1 0 0) surface. It is found that after a n-GaAs (1 0 0) sample is damaged by 150 eV Ar⁺ ion bombardment, and followed by 50 eV S⁺ ion treatment and subsequent annealing process, finally an (1 × 1) ordering GaAs (1 0 0) surface with low surface states is obtained.     

Reorientation phase transition and sensitivity of the extraordinary Hall-effect-based sensors

Spin reorientation phase transition was observed in 5–10 nm thick polycrystalline Ni films at about 150 K. The extraordinary Hall effect resistivity in these films is enhanced by surface scattering and is of the order of 1 μΩ cm. Magnetization reversal in the vicinity of the transition is very sharp due to the development of the multi-domain structure with the out-of-plane anisotropy. As a result, the field sensitivity of the Hall resistance reaches values exceeding 500 Ω/T.     

Influence of oxygen partial pressure on optoelectrical properties of aluminum-doped CdO thin films

Highly conducting and transparent aluminum-doped CdO thin films were deposited on quartz by ablating the sintered target of CdO containing 2 wt% of aluminum with a KrF excimer laser (λ = 248 nm and pulsed duration of 20 ns). The effect of oxygen partial pressure on structural, electrical, and optical properties was studied. It is observed that the (2 0 0) plane is highly preferred for the films grown under high oxygen pressure. The conductivity, carrier concentration and mobility of the films decrease with increase in the oxygen pressure after attaining maximum. Low resistivity (2.27 × 10⁻⁵ Ω cm), and high mobility (79 cm² V⁻¹ s⁻¹) is observed for the film grown under oxygen pressure of 1.0 × 10⁻³ mbar. The optical band gap is found varying between 2.68 and 2.90 eV for various oxygen pressure.     

Study of oscillations and pattern formation in the CO + O2 reaction on Pt(1 0 0) surfaces through dynamic Monte Carlo simulation

Oscillations and pattern formation driven by a surface reconstruction are studied for the catalytic oxidation of CO on Pt(1 0 0) single-crystal surfaces through dynamic Monte Carlo simulations at low pressure and relatively high temperatures conditions. Sustained, modulated, irregular and damped oscillations are observed in our analysis as well as the formation of cellular, target, double spiral, spiral wave and turbulent patterns. The effect and the importance of the hex ? 1 × 1 surface phase transition and partial pressure of the reactants in the gas phase on the behavior of the system are discussed.     

Magnetotransport properties of epitaxial Pr0.5Ca0.5MnO3 films grown by a solution technique

Epitaxial Pr_0.5Ca_0.5MnO₃ films have been synthesized on (0 0 1) SrTiO₃ substrate using a chemical solution deposition technique and two-step post-annealing process. The zero field resistivity of the films shows semiconducting behavior and a characteristic of charge ordering is observed at 230 K. The resistivity of the 10 nm film did not show any effect with the magnetic field. However, melting of charge ordering was observed for the 120 nm film at an applied magnetic field of 4 T. Large decrease in the resistivity of the 120 nm film (<100 K) resulted in magnetoresistance of nearly −100% at 75 K.     

Pockels effect of water in the electric double layer at the interface between water and transparent electrode

We have obtained the first experimental evidence for the Pockels effect of water, which is induced by a high electric field in the electric double layer (EDL) on the water-transparent electrode interface. The electric-field induced energy shift of the visible interference fringes of a 300 nm indium-tin-oxide (ITO) electrode layer is observed, indicating a negative refractive index change at the interface. Numerical calculation reproduces well the experimental observation, showing that the signal mainly originates from water in the EDL. The Pockels constants of water are estimated to be r₃₃ = 5.1 × 100 pm/V and r₁₃ = 1.7 × 100 pm/V. The large anisotropy of the Pockels effect of water is deduced from the incidence angle dependence of the p-polarization signal. At the same time, the ITO shows a blue shift of the band gap in the UV due to the band population effect in the space charge layer. The plasma frequency in the near IR is also expected to increase due to the band population effect, since the ITO has a high doped carrier population close to metal. A negative refractive index change in the ITO space charge layer is induced from both effects, but its effect on the signal is estimated to be much smaller than that of the negative refractive index change of water in the EDL.     

Fabrication of MgO barrier for a magnetic tunnel junction in as-deposited state using amorphous RE–TM alloy

MgO (1 0 0) textured films on Fe buffer layer with (1 0 0) preferential orientation were prepared by a reactive facing targets sputtering system at a substrate temperature of 100 °C during MgO deposition. This process can allow fabrication of MgO (1 0 0) tunneling barrier layer without high-temperature annealing process after the sputter-deposition. In addition, FeCo (1 0 0) preferred orientation films prepared on GdFeCo layers were improved with GdFeCo thickness. MgO films deposited on Fe (or FeCo) buffer layers revealed apparent (1 0 0) preferred orientation at the early stage of the film growth. 3 nm-thick MgO films deposited on GdFeCo [100 nm]/Fe [3 nm] exhibited (1 0 0) texture. Magnetic characteristic of perpendicular-magnetic tunnel junction (P-MTJ) element with the structure of GdFeCo [100 nm]/Fe [3 nm]/MgO [3 nm]/Fe [3 nm]/TbFeCo [100 nm] exhibited high squareness ratio of 0.8 and coercivity of free layer as low as 117 Oe by anomalous Hall effect, and (1 0 0) preferred orientation of 3 nm-thick MgO layer was observed by an X-ray diffractometer.     

The nonlinear refraction and absorption dependence on the thermal effect for 4 ns pulse duration in binuclear Zn(II) phthalocyanine solution

The influence of thermal effect on the third-order nonlinear optical properties of binuclear Zn(II) phthalocyanine in chloroform solution was studied. The nonlinear refraction and absorption of the sample was measured by using Z-scan technique with 4 ns laser pulses at 532 nm wavelength. The opposite signs of the effective nonlinear refraction index were observed by changing the focal length of focusing lens from 10 cm to 20 cm in the experimental setup. Changing the focusing lens increased the beam waist radius from 7 μm to 20 μm. The nonlinear absorption coefficient was reduced about 200 times based on changing the fluence or beam waist radius. The drastic changes in the third-order nonlinear optical parameters were attributed to thermal effect. To investigate the role of thermal effects even further the effective nonlinear refraction and absorption coefficients were studied by using different repetition rates, input powers and concentrations.     

Exchange bias and negative magnetoresistance in [Co/Bi/Co]/IrMn thin films]

The artificial control of grain-boundary resistance and its contribution to magnetic and magneto-transport properties in [Co(3 nm)/Bi(2.5 nm)/Co(3 nm)]Ir₂₀Mn₈₀(12 nm) thin films that exhibit exchange bias is studied. Transverse magnetoresistance (MR) loops exhibit a negative MR in thin films grown by magnetron sputtering on Si/SiN_x(100 nm) substrates. This negative MR effect is of the giant-MR (GMR) type, although its magnitude is less than 1%. A considerable exchange bias (EB) effect is observed only at lower temperatures, where both, GMR and isothermal magnetization loops exhibit a shift of −600 Oe at 5 K.     

Anomaly in the field dependence of the anisotropic magnetic susceptiblity of a single-grained α-Mn

A kink was observed near 20 kOe in the field dependence of the magnetization in a single-grained α-Mn without a magnetic hysteresis below the Neel temperature in an accurate magnetization measurement below 80 kOe. It was observed along [1 0 0], [1 1 0] and [1 1 1] crystallographic directions. The field dependence of the magnetization above 40 kOe extrapolates to positive finite magnetization at null field. The kink suggests a weak metamagnetism induced by the external magnetic field. A small but clear anisotropy was observed between the weak-field susceptibilities along [1 0 0] and [1 1 0]/[1 1 1] directions. A previously reported large susceptibility anomaly was not affirmed between 90 and 270 kOe.