Chemisorption,photodesorption and conductivity measurements on ZnO surfaces

Experimental results of a mass-spectro metric analysis of photodesorption from ZnO single crystals at different temperatures are reported. They provide direct evidence that CO₂ is the only photodesorbed species from both the single crystal and powder samples studied. The CO₂ photodesorption occurs only when the incident photon energy exceeds the ZnO band gap energy. Excellent agreement between the illumination time dependence of the CO₂ photodesorption and surface conductivity data in both single crystals and powder samples strongly suggests a substrate dependent mechanism in which photodesorption occurs by the neutralization of chemisorbed CO₂^? “ion-molecules” by photogenerated holes. In addition, measurements of the chemisorption kinetics of oxygen on ZnO single crystal and powder surfaces are reported. The results are compared with CO₂ and CO chemisorptiun experiments to show that, of these gases, only oxygen chemisorbs from the gas phase. Auger analysis of oxygen saturated and photodesorbed surfaces of ZnO show a significant relation between the carbon content and the photo-desorptive and conductive activities of those surfaces. These observations indicate that impurity carbon atoms on ZnO surfaces can be oxidized by electron capture to produce chemisorbed CO₂^? “ion-molecules’ which will then readily photodesorb by bandgap radiation. This proposed process is discussed together with further supporting evidence.     

Effects of annealing temperature on the structure, photoluminescence and ferromagnetism properties of Cr-implanted ZnO nanowires

Room temperature ferromagnetism was observed in Cr-implanted ZnO nanowires annealed at 500, 600, and 700 °C. The implantation dose for Cr ions was 1×10¹⁶ cm^?2, while the implantation energies were 100 keV. Except for ZnO (100), (002), and (200) orientations, no extra diffraction peaks from Cr-related secondary phase or impurities were observed. With the increasing of annealing temperatures, the intensity of the peaks increased while the FWHM values decreased. The Cr 2p_1/2 and 2p_3/2 peaks, with a binding energy difference of 10.6 eV, appear at 586.3 and 575.7 eV, can be attributed to Cr³⁺ in ZnO nanowires. For the Cr-implanted ZnO nanowires without annealing, the band energy emission disappears and the defect related emission with wavelength of 500–700 nm dominates, which can be attributed to defects introduced by implantation. Cr-implanted ZnO nanowires annealed at 500 °C show a saturation magnetization value of over 11.4×10^?5 emu and a positive coercive field of 67 Oe. The origin of ferromagnetism behavior can be explained on the basis of electrons and defects that form bound magnetic polarons, which overlap to create a spin-split impurity band.     

The GaP(001) surface and the adsorption of Cs

GaP(001) cleaned by argon-ion bombardment and annealed at 500°C showed the Ga-stabilized GaP(001)(4 × 2) structure. Only treatment in 10^?5 Torr PH₃ at 500°C gave the P-stabilized GaP(001)(1 × 2) structure. The AES peak ratio $\text{P}\text{Ga}$ is 2 for the (4 × 2) and 3.5 for the (1 × 2) structure. Cs adsorbs with a sticking probability of unity up to 5 × 10¹⁴ Cs atoms cm^?2 and a lower one at higher coverages. The photoemission measured with uv light of 3660 Å showed a maximum at the coverage of 5 × 10¹⁴ atoms cm^?2. Cs adsorbs amorphously at room temperature, but heat treatment gives ordered structures, which are thought to be reconstructed GaP(001) structures induced by Cs. The LEED patterns showed the GaP(001)(1 × 2) Cs structure formed at 180°C for 10 h with a Cs coverage of 5 × 10¹⁴ atoms cm^?2, the GaP(001)(1 × 4) Cs formed at 210°C for 10 hours with a Cs coverage of 2.7 × 10¹⁴ atoms cm^?2, the GaP(001)(7 × 1) and the high temperature GaP(001)(1 × 4), the latter two with very low Cs content. Desorption measurements show three stability regions: (a) between 25–150°C for coverages greater than 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.2 eV; (b) between 180–200°C with a coverage of 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.8 eV; (c) between 210–400°C with a coverage of 2.7 × 10¹⁴ atoms cm^?2, and an activation energy of 2.5 eV.     

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

High-quality ZnO thin films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO/Al₂O₃ interface. The full width at half maximum values of the 0002 and $30\bar{3}2$ ZnO ω-rocking curves are 467.8 and 813.5 arc sec for a 600 nm thick ZnO film. A screw dislocation density of 4.35×10⁸ cm^?2 and an edge dislocation density of 3.38×10⁹ cm^?2 are estimated by X-ray diffraction. The surface of the ZnO epilayers contains hexagonal pits, which can be observed in the Zn-polar ZnO. The films have a resistivity of 0.119 Ω?cm, an electron concentration of 6.85×10¹⁷ cm^?3, and a mobility of 76.5 cm²?V^?1?s^?1 at room temperature. Low temperature photoluminescence measurements show good optical properties comparable to ZnO single crystals.     

Deep levels in gallium arsenide by capacitance methods

The three capacitance methods, i.e., TSCAP, PHCAP, and transient capacitance measurements, are applied to determine electronic properties of deep levels inn-GaAs. In the boat-grown wafer detected are the 0.30 eV electron trap withN _T =3.6×10¹⁶ cm^?3 andS _n =2.4×10^?15 cm², and the 0.75 eV electron trap withN _T =2.0×10¹⁶ cm^?3 andS _n =1.2×10^?14 cm². In the epitaxial wafer, the 0.45 eV hole trap is detected withN _T >1.5×10¹³ cm^?3 andS _p =1.4×10^?14 cm² as well as the 0.75 eV electron trap withN _T =2.4×10¹³ cm^?3.     

Charge transfer reaction of multi-charged oxygen ions with O2

The rate of transfer of electrons from O₂ to O²⁺ and O³⁺ has been measured at energies ? 2 eV using a stored ion technique. The rate for O²⁺ is k = 1.0(0.3) × 10^?9 cm³/s and for O³⁺, k = 2.5(0.3) × 10^?9 cm³/s, compared to calculated Langevin rates of 1.8 × 10^?9 cm³/s and 2.7 × 10^?9 cm³/s respectively.     

Monochromatic soft X-ray-induced reactions of CCl2F2 adsorbed on Si(111)-7 × 7 near the Si(2p) edge

Continuous-time photoelectron spectroscopy (PES) and continuous-time core-level photon-stimulated desorption (PSD) spectroscopy were used to study the monochromatic soft X-ray-induced reactions of CCl₂F₂ molecules adsorbed on Si(111)-7 × 7 at 30 K (CCl₂F₂ dose = 2.0 × 10¹⁴ molecules/cm², ~ 0.75 monolayer) near the Si(2p) core level. Evolution of adsorbed CCl₂F₂ molecules was monitored by using continuous-time photoelectron spectroscopy at two photon energies of 98 and 120 eV to deduce the photolysis cross section as a function of energy. It was found that the photolysis cross sections for 98 and 120 eV photons are _~1.4 × 10^? 18 and ~ 8.0 × 10^? 18 cm², respectively. Sequential F⁺ PSD spectra obtained by using continuous-time core-level photon-stimulated desorption spectroscopy in the photon energy range of 98–110 eV show the variation of their shapes with photon exposure and depict the formation of surface SiF species. The dissociation of CCl₂F₂ molecules adsorbed on Si(111)-7 × 7, irradiated by monochromatic soft X-ray in the photon energy range of 98–110 eV, is mainly due to dissociative electron attachment and indirect dipolar dissociation induced by photoelectrons emitted from the silicon surface.     

Photoelectronic investigations of semi-insulating p-type GaAs:Cr containing neutral chromium acceptors

A photoelectronic analysis of p-type GaAs:Cr, i.e. measurements of thermally stimulated currents and the dependences of photoconductivity and photo-Hall effect on photon energy, temperature and light intensity, have enabled trap locations and densities as well as properties of neutral chromium acceptors to be determined. Hole traps proved to be located at 0.15 and 0.23 eV above the valence band, and their densities have been estimated to be 10¹⁵ cm^?3 and 5 × 10¹⁶ cm^?3 respectively. Their occurrence is related to the presence of copper in the samples investigated. Neutral chromium acceptors are located at 0.77 eV above the valence band and are at a constant distance from the conduction band. Their photoionization cross-section is 3 × 10^?17 cm² while the photoexcited electron escape cross-section is about 10^?20 cm². The potential of a neutral Cr acceptor is of the delta function type with weak coulombic tails. The maximum radius of the Bohr orbit of an electron in the ground state is 4 atomic units.     

Trapping levels in PbI2

A first investigation on trapping levels in PbI₂, performed by the Thermally Stimulated Current (TSC) technique, is presented. Three hole trapping centers are evidenced at 0.12, 0.29 and 0.59 eV above the valence band, with densities ranging between 8 × 10¹⁴ and 5 × 10¹⁶ cm^?3 and capture cross-sections between 8 × 10^?21 and 3 × 10^?17 cm². The center at 0.59 eV is likely responsible for the relatively short trapping time in PbI₂, as determined with nuclear techniques. By using a particular method, the behaviour of hole drift mobility along the layers as a function of temperature is determined for the first time. Finally, the presence of a spurious peak, not sensitive to irradiation, is reported and discussed.     

Wavenumber measurement of weak CO2 laser lines around 10.6 μm

An experimental method is described in which a tunable semiconductor diode laser and the regular CO₂ laser lines are utilized to measure the wavenumber of CO₂ laser lines to an accuracy of about ±5 × 10^?4 cm^?1. Twenty new CO₂ laser lines have been measured over the 943 to 951 cm^?1 region.     

First-principles calculations of optical properties of Mg2Pb

Based on the density functional theory(DFT),the electronic structures and optical properties of Mg2Pb are calculated by using the local density approximation(LDA)and plane wave pseudo-potential method.The calculation results show that the indirect band gap width of Mg2Pb is 0.02796 eV.The optical properties of Mg2Pb have isotropic characteristics,the static dielectric function of Mg2Pb is1(0)=10.33 and the refractive index is n0=3.5075.The maximum absorption coefficient is 4.8060×105cm 1.The absorption in the photon energy range of 25–40 eV approaches to zero,shows the optical colorless and transparent behaviors.     

Cooperative phenomena of random electric dipoles in an amorphous matrix

A ferroelectric phase transition has been observed for the first time in a series of glasses containing WO₆-octahedra. The techniques of thermally stimulated depolarization currents were used to observe the transition from independent dipole behavior to cooperative behavior in this amorphous system as a function of concentration. These measurements yielded the activation energy ΔE=1.2eV, the pre-exponential τ₀=2 × 10^-22sec, and the dipole moment p?=1.3 × 10^?15 esu cm for WO₃ in Li₂B₄O₇. A dipole moment bearing species due to Li₂B₄O₇ was observed with ΔE=0.44eV and pre-exponential τ₀=5 × 10^?8 sec. The depolarization peaks of WO₃ occur in the temperature range 265–275 K depending upon WO₃ concentration and are pressure dependent with an initial slope of 2 × 10^?5K dyne^?1 cm². A model was developed for a possible phase transition associated with a random “pseudo-spin” system in an amorphous matrix.     

Quasi-elastic scattering due to fast oxygen diffuson in yttria stabilized zirconia

Evidence for fast oxygen diffusion at high temperatures in single crystal ZrO₂ containing 12 mol % Y₂O₃ is presented from quasi-elastic light scattering data. Lattice vacancies are responsible for the enhanced ionic diffusion and the structural disorder. In the temperature range investigated we estimate the barrier activation energy for the jumping of oxygen vacancies to be 0.25 eV. At 1500°K the jump time is ～ 4 × 10^?12 sec., the diffusion constant is ～ 3.26 × 10^?5 cm²/sec. and the conductivity is ～ 0.24 (Ωcm)^?1.     

On the bound states in the muonic molecular ions

Absolute cross sections for electron impact ionization and dissociation of OH⁺ and OD⁺ leading to the formation of the OH²⁺, O⁺, O²⁺, O³⁺ and D⁺ ions have been measured by applying the animated electron-ion beam method in the energy range from the respective reaction thresholds up to 2.5 keV. The maximum of the single ionization cross section is found to be (0.95? ± ?0.02) × 10^?19 cm² at 155 eV. The maximum total cross sections for O⁺ and D⁺ fragments production are observed to be (15.7? ± ?0.2) × 10^?17 cm² at 95 eV and (10.8? ± ?0.5) × 10^?17 cm² at 95 eV, respectively. The cross sections for O²⁺ and O³⁺ are much smaller, (5.37? ± ?0.04) × 10^-18 cm² at 135 eV and (7.95? ± ? 0.23) × 10^-20 cm² at 315 eV, respectively. The collected data are analyzed in details in order to determine separately the contributions of dissociative excitation and of dissociative ionization to the O⁺ and D⁺ fragments production.     

Astrophysical upper bounds on neutrino-nucleon cross-section at energy E ⩾ 3 × 1017 eV

The possibility of experiments with cosmic neutrinos of energy E > 3 × 10¹⁷ eV is discussed. The upper bound of neutrino-nucleon cross-section σ < 9.3 × 10^?30 cm₂ is obtained from the zenith angular distribution of extensive air showers under some particular astrophysical assumptions.     

Shubnikov-de haas effect in n-CdSnAs2

Shubnikov-de Haas oscillations in the transverse magnetoresistance of single-crystalline n-type CdSnAs₂ have been recorded at temperatures between 2 and 25 K in magnetic fields up to 5T. The electron concentration of the samples ranged from 2 × 10¹⁷ to 2 × 10¹⁸ cm^?3. The angular dependences of the oscillation periods and cyclotron effective masses showed that the conduction band exhibits an energy dependent anisotropy, obeying the Kildal band structure model. For the low-temperature values of the band parameters we found: a band gap E_g = 0.30 eV, a spin-orbit splitting Δ = 0.50 eV, a crystal field splitting parameter δ = ?0.09 eV, and an interband matrix element P = 8.5 × 10^?8eV cm. This simple four-level model was found to be not adequate to describe quantitatively the observed electronic effective g-factor for a sample with low electron concentration.     

Diffusionskonstante und charakteristische Absorption vor der Bandkante von Mn in ZnO-Kristallen

ZnO single crystals were doped with Mn and Co by diffusion. In the temperature range from 1400–1600 K the Mn and Co-diffusion-constants were determined:D _Mn=3.2 · 10^?3 exp (?2.87 eV/kT) cm² sec^?1 andD _Co=1·10exp(?3.98 eV/kT) cm² sec^?1. The Mn doped ZnO crystals show a characteristic colour due to an absorption near the intrinsic absorption edge. The corresponding absorption spectra were measured forE⊥c andE∥c. A discussion of different absorption mechanism shows that a charge-transfer transition is responsible for this absorption.     

Ga<Subscript>Zn</Subscript>-V<Subscript>Zn</Subscript> acceptor complex defect in Ga-doped ZnO

Gallium (Ga)-doped ZnO is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant compensating defect in Ga-doped ZnO isotopic heterostructures. The (Ga_Zn-V_Zn)^? complex defect, instead of the isolated V_Zn^2?, is identified as the predominant compensating acceptor center responsible for the low donor doping efficiency. The comparative diffusion experiments operated by the secondary ion mass spectrometry reveal a ~0.78 eV binding energy of this complex defect, which well matches the electrical activation energy derived from the temperature-dependent Hall effect measurements (~(0.82±0.02) eV). These findings contribute to an essential understanding of the (Ga_Zn-V_Zn)^? complex defect and the potential engineering routes of heavily Ga-doped ZnO.     

50 MeV Li3+ ion irradiation effect on structural, electrical, and dielectric properties of PVA-based nanocomposite polymer electrolytes

Nanocomposite polymer electrolyte thin films of polyvinyl alcohol (PVA)-orthophosphoric acid (H₃PO₄)-Al₂O₃ have been prepared by solution cast technique. Films are irradiated with 50 MeV Li³⁺ ions having four different fluences viz. 5?×?10¹⁰, 1?×?10¹¹, 5?×?10¹¹, and 1?×?10¹² ions/cm². The effect of irradiation on polymeric samples has been studied and characterized. X-ray diffraction spectra reveal that percent degree of crystallinity of samples decrease with ion fluences. Glass transition and melting temperatures have been also decreased as observed in differential scanning calorimetry. A possible complexation/interaction has been shown by Fourier transform infrared spectroscopy. Temperature-dependent ionic conductivity shows an Arrhenius behavior before and after glass transition temperature. It is observed that ionic conductivity increases with ion fluences and after a critical fluence, it starts to decrease. Maximum ionic conductivity of ～2.3?×?10^?5 S/cm owing to minimum activation energy of ～0.012 eV has been observed for irradiated electrolyte sample at fluence of 5?×?10¹¹ ions/cm². The dielectric constant and dielectric loss also increase with ion fluences while they decrease with frequency. Transference number of ions shows that the samples are of purely ionic in nature before and after ion irradiation.     

Structural and compositional changes in ion-bombarded Ta2O5

A detailed study of the effect of heavy-ion bombardment on Ta₂O₅ has been undertaken using a combination of radioactive tracer techniques, electron microscopy, and Rutherford backscattering. Crystalline Ta₂O₅ is amorphized at ~6 × 10¹³ ions cm^?2, while at a dose of ~5 × 10¹⁶ ions cm^?2 the electron microscopy reveals the development of random grains of a new crystalline phase. By ~1 × 10¹⁷ ions cm^?2 the grains are not yet overlapping but still yield a diffraction pattern consistent with either δ-Ta-O (not to be confused with TaO) or Ta_1?xO₂, thus indicating that Ta₂O₅, like most other transition-metal oxides, is subject to preferential sputtering. Preferential sputtering was confirmed by backscattering analysis of specimens bombarded to high doses, where the average surface composition was found to be Ta_1.8±0.2O₂ or, equivalently, Ta₂O_2.2±0.2. The surface alteration had an average composition independent of the mass and energy of the incident ions.