Adsorption of oxygen on clean single crystal faces of aluminium

Auger electron spectroscopy and work function measurements have been used to study the interaction of clean Al(111) and Al(100) faces with oxygen at low pressure near room temperature. The results for the two faces differ strongly. Thus, the sticking probability of the (111) face decreases rapidly with coverage, while the work function increases slightly, by 0.1 eV at 200 L. In contrast, the sticking probability of the (100) faces goes through a maximum, whereas the work function decreases almost linearly with coverage, the total decrease at 200 L being 0.5–0.8 eV. The shape of the Al L_{2, 3}VV spectrum from oxidized Al(100) is independent of coverage, and it is in fact very similar to previously reported spectra from oxidized polycrystalline aluminium. The corresponding spectrum from Al(111) exhibits large changes with oxygen coverage and shows a previously unreported double peak at ~60 eV. The results are explained on the assumption that oxygen adsorbs randomly on the (111) face, and that thin (~5 Å) islands of Al₂O₃-like oxide form on the (100) face.     

A study of the adsorption of oxygen on Ni(111) using auger electron spectroscopy: Chemical shifts and valence spectra

Auger electron spectra have been recorded when oxygen is adsorbed on a Ni(111) single crystal surface. For the coverage range θ < 1, an analysis of the plot of the peak to peak height (H) of the oxygen KVV (516 eV) transition versus the total number of molecules cm^2? impinging on the surface (molecular beam dosing) shows agreement with the kinetic mechanism proposed by Morgan and King [Surface Sci. 23 (1970) 259] for the adsorption of oxygen on polycrystalline nickel films. In this coverage range, no energy shifts of the nickel or oxygen Auger peaks were recorded.At coverages θ > 1 (standard dosing procedure) shifts in the valence spectra M_{2, 3}VV (61 eV) and L₃M_{2, 3}V (782 eV) of ?2.3 eV and ?1.8eV respectively are recorded at 1.4 × 10^?2 torr-sec. Up to these coverages no shift of the L₃VV transition (849 eV) is observed. A chemical shift of ?2.1 eV is recorded in the L₃M_{2, 3}M_{2, 3} Auger transition (716 eV) at 1.4 × 10^?2 torr-sec.In the coverage range θ > 1, shifts in the energy of the oxygen Auger peaks are observed. At 5.8 × 10^?3 torr-sec. the KVV (516 eV) and KL₁V (495.2 ± 0.3 eV) transitions show shifts of ?1.5 eV and ?(1.0 ±0.3) eV respectively. No shift up to this coverage is recorded in the KL₁L₁ (480.6 ± 0.3 eV) transition.     

Oxygen chemisorption and initial oxidation of Cr(110)

The initial stages of the interaction of oxygen with a Cr(110) surface have been investigated at 300 K by LEED, AES, electron energy loss spectroscopy (ELS), secondary electron emission spectroscopy (SES) and work-function change measurement (Δφ). In the exposure region up to 2 L, the clean-surface ELS peaks due to interband transition weakened and then disappeared, while the ～5.8 and 10 eV loss peaks attributed to the O 2p → Cr 3d transitions appeared, accompanied with a work-function increase (Δφ = +0.19 eV at2L). In the region 2–6 L the work function decreased to below the original clean-surface value (Δφ_min = ?0.24 eV at6L), and five additional ELS peaks were observed at ～2, 4, 11, 20 and 32 eV: the 2 and 4 eV peaks are ascribed to the ligand-field d → d transitions of a Cr³⁺ ion, the 11 eV peak to the O 2p → Cr 4s transition, the 20 eV peak to the Cr 3d → 4p transition of a Cr³⁺ ion and the 32 eV peak probably to the Cr 3d → 4f transition. A new SES peak at 6.1 eV, being attributed to the final state for t he 11 eV ELS peak, was observed at above 3 L and identified as due to the unfilled Cr 4s state caused by charge transfer from Cr to oxygen sites in this region. In the region 6–15 L the work function increased again (Δφ_max = +0.32 eV at15 L), the 33 and 46 eV Auger peaks due to respectively the M_2,3(Cr)L_2,3(O)L_2,3(O) cross transition and the M_2,3VV transition of the oxide appeared and the 26 eV ELS peak due to the O 2s → Cr 4s transition was also observed. Above 10 L, the ELS spectra were found to be practically the same as that of Cr₂O₃. Finally, above 15 L, the work function decreased slowly (Δφ = +0.13 eV at40L). From these results, the oxygen interaction with a Cr(110) surface can be classified into four different stages: (1) dissociative chemisorption stage up to 2 L, (2) incorporation of O adatoms into the Cr selvedge between 2–6 L, (3) rapid oxidation between 6–15 L leading to the formation of thin Cr₂O₃ film, and (4) slow thickening of Cr₂O₃ above 15 L. The change in the Cr 3p excitation spectrum during oxidation was also investigated. The oxide growth can be interpreted on the basis of a modified coupled current approach of low-temperature oxidation of metals.     

Solid state effects in the Auger spectrum of zinc and oxidised zinc

Measurements of the zinc L_2,3M_4,5M_4,5 Auger spectra are reported. The line shapes in solid zinc are similar to those in zinc vapour but the Auger energies have increased by about 15 eV and the line breadths have broadened from 0.5 eV to 1.0 eV fwhm. The ratio of the L₂:L₃ groups differ from the vapour suggesting that L₂L₃M_4,5 Coster-Kronig transitions occur in the solid but not in the vapour. Changes in the spectra with oxidation have been observed. The Auger lines broaden on oxidation and a line breadth of 3.2 eV fwhm gives the best fit to the spectrum of almost fully oxidised zinc. The oxide L₃M_4,5M_4,5¹G₄ peak progressively shifts from 2.6 eV to 4.2 eV below the metal peak as the oxide thickness increases, the latter value being close to the measured shift in crystalline zinc oxide. Similar energy variation is reported for solid Argon condensed onto clean silver and the shifts are explained in terms of variation in “extra electron relaxation” with film thickness.     

ELS study on initial oxidation of Ni(100) surfaces

Electron energy loss spectra of clean and oxygen-covered Ni(100) surfaces were observed with concomitant measurements of LEED, work function change, and Auger peak height ratio O(KL_{2, 3}L_{2, 3})/Ni(L_{2, 3}VV). The observed electronic transitions are interpreted on the basis of primary election energy dependence, and of comparison with the loss spectrum for a UHV-cleaved NiO(100) surface and optical data of Ni. The observed loss peaks at 9.1, 14, and 19 eV in the clean surface spectrum are ascribed to the bulk plasmon of the 4s electrons, the surface plasmon, and the bulk plasmon of the coupled 3d + 4s electrons, respectively, and the weak but sharp peak at 33 eV is tentatively attributed to the localized many-body effect in the final state. Three oxygen-derived peaks at 6.0, 8.0, and 10.3 eV in the low oxygen exposure region (?4 L) are ascribed to the O 2p(e) → Ni 3d, O 2p(a₁) → Ni 3d, and O 2p → Ni 4s transitions, respectively. In the high oxygen exposure region (?50 L), the spectra become quite similar to that of the UHV-cleaved NiO(100) surface. The oxidation process consistent with LEED, Auger peak height ratio and work function change measurements is discussed.     

Amorphous germanium III. Optical properties

The optical properties of thick sputtered films (～30μ) of amorphous Ge, grown with different substrate temperatures (0ˇ-T _sˇ-350°C), were obtained between 0·05 and 4·5 eV by a combination of reflectance, transmittance and ellipsometric measurements. The refractive index at 0·15 eV decreases monotonically with increasing T _s, or equivalently, with increasing density, and is 4·13±0·05 eV in the highest density films. The absorption edge is approximately exponential (10²?α?10⁴ cm^?1) but shifts monotonically to higher energy and increases in slope with increasing T _s. Similarly, the peak in ε₂ grows by about 10% and shifts by about 0·15 eV to higher energies, reaching a maximum of about 23 at 2·90±0·05 eV in the high density films. The peak in the transition strength ω²ε₂ occurs at 4·2±0·2 eV in all films, but increases in magnitude with increasing T _s. The sum rules for n _eff(ω) and ε_0,eff(ω) are evaluated for ▄ω?5 eV and vary monotonically with T _s. These trends are neither compatible with Galeener's void resonance theory nor with changes in the oxygen content of the films, determined by the examination of absorption peaks at 0·053 eV and 0·09 eV. An explanation, suggested here and expanded in I, is based on the observed changes in the structure of the network and voids.     

The initial oxidation of Cu(100) single crystal surfaces: an electron spectroscopic investigation

The total energy distribution of electrons emitted from clean Cu(100) and oxygen covered surfaces is analysed. A primary electron energy of 400 eV enabled the investigation of characteristic losses (ELS), Cu MVV Auger transitions and true secondary electrons in a single spectroscopic run. Oxygen exposure up to 10⁸ L at elevated temperature (~400 K) results in a Cu density of states (DOS) strongly affected by O(2p) electrons. The Auger lines of Cu, atomic-like for clean surfaces, reveal DOS effects after some 10⁷ L oxygen exposure: all MVV transitions shift down by ~2 eV in spite of a fixed M₂₃ level; the M₂₃VV Auger line splitting is vanishing due to a broadened valence band maximum allowing the deexcitation of the final two-hole state of intraatomic transitions. Heating the oxygen covered crystal to 820 K is accompanied by the removal of much surface oxygen and an electronic state resembling an earlier oxidation state without DOS effects in the Cu Auger spectrum.     

Spectres auger et sections efficaces d'ionisation de la couche L23 du magnésium et de l'aluminium sous impact de protons et d'ions lourds (10–100 keV)

A comparison of Auger structures observed on the energy distributions of secondary electrons emitted from Mg and A1 solid targets bombarded by either light particles (H⁺ and He⁺) or heavy ions (Ne⁺, Ar⁺, …) is presented. With incident protons, it essentially appears a broad peak corresponding to a L₂₃VV transition and a weak shoulder due to the surface and bulk plasmon excitation. The Auger structures obtained with heavy ions are richer and the peaks which compose it are sharper. Such atomic-like structures correspond to Auger transitions from excited (with one or two L₂₃ holes) moving recoiling atoms. The experimental L₂₃ Mg and A1 ionization cross sections were determined from Auger spectra. In H⁺?Mg (or A1) collisions our results are in good agreement with the theoretical values calculated in a PWBA model. In the case of heavy ion-target interactions, we compared the experimental measurements with ionization cross section calculations obtained in a Landau-Zener model.     

SiO2 surface defect centers studied by AES

A theoretical model is proposed on how a Si dangling bond associated with an oxygen vacancy on a SiO₂ surface (E_s′ center) should be observed by Auger electron spectroscopy (AES). The Auger electron distribution N_A(E) for the L₂₃VV transition band is calculated for a stoichiometric SiO₂ surface, and for a SiO_x surface containing Si-(e^?O₃) coordinations. The latter is characterized by an additional L₂₃VD transition band, where D is the energy level of the unpaired electron e^?. The theoretical N_A(E) spectra are compared with experimental N(E) spectra for a pristine, and for an electron radiation damaged quartz surface. Agreement with the theoretical model is obtained if D is assumed to lie ≈2 eV below the conduction band edge. This result shows that AES is uniquely useful in revealing the absolute energy level of localized, occupied surface defect states. As the L₂₃VD transition band (main peak at 86 eV) cannot unambiguously be distinguished from a SiSi₄ coordination L₂₃VV spectrum (main peak at 88 eV), supporting evidence is presented as to why we exclude a SiSi₄ coordination for our particular experimental example. Application of the Si-(e^?O₃) model to the interpretation of SiO₂Si interface Auger spectra is also discussed.     

Internal photoemission and plasmon gain in solid and thin films of Al

Weak features in the electron spectrum of Al excited by bremsstrahlung radiation from a Cu anode have been studied using a recently developed multidetector. A feature at ～1410 eV which has been identified as the Al 2p internal photoelectron line was found to have an intensity 4.2 × 10^?3 times that of the Al KL_2,3L_2,3:¹D₂ Auger line, in agreement with a simple theoretical treatment. The identification of this feature is confirmed by the observation of an ～67% decrease in its intensity in spectra obtained from clean Al films in the thickness range 3.1–34.0 nm. The intensity of a plasmon gain peak at ～1404 eV is found to be independent of thickness for films of thickness greater than 7.5 nm.     

Photoemission study of oxygen chemisorption on tin

Photoemission measurements have been made at photon energies from 5–12 eV and at 21.2 eV on evaporated Sn films and the same films with varying room temperature exposure to oxygen. For hν ? 9 eV the quantum yield for Sn with exposures of as much as 4000 L oxygen (1 L = 1 Langmuir = 10^?6 Torr sec) differs only slightly from the clean metal. For hν ? 9 eV no change in yield is observed with oxygen exposure. The energy distribution of photoemitted electron (EDC's) from Sn with increasing exposure to oxygen above ? 20 L are characterized by the growth of two peaks which were not present in the EDC's for the clean metal, located 2.9 ± 0.1 eV and 4.8 ± 0.1 eV below the Fermi level. We associate this structure with the presence of SnO₂. No sharp resonance which could be associated with adsorbed oxygen was seen. Uniformly reduced emission from metallic Sn states and a Fermi level as sharp as for the clean metal is observed in the EDC's at all oxygen exposures. In addition, no change in work function with oxygen exposure was detected. The effects of oxygen saturate for exposures ? 4000 L. We suggest that under the conditions used in this experiment, the oxygen penetrates beneath the surface forming SnO₂ and leaving metallic Sn on the surface.     

Oxidation of a potassium monolayer on Ru(001) studied with photoemission,NEXAFS and vibrational EELS

The interaction of oxygen with a monolayer of potassium on a Ru(001) surface has been investigated with photoemission and NEXAFS. O 1s core-level data exhibit for low exposures of oxygen a single peak at 531.8 eV. This indicates together with the earlier observation of KO bond formation by EELS that a single K_xO_y species with equivalent oxygen atoms is formed. NEXAFS data indicate a partially filled O π* orbital and a strongly shifted σ-resonance. Photoemission, vibrational and Auger data suggest an ionic species which is close to potassium Superoxide with the OO bond oriented parallel to the surface.     

Species formed at cuprite fracture surfaces; observation of O 1s surface core level shift

Surfaces of mineral cuprite prepared by fracture under UHV have been characterised by synchrotron XPS and near-edge X-ray absorption spectroscopy before and after exposure to ambient air. Before exposure of the cuprite, the Cu 2p photoelectron and Cu L_2,3-edge absorption spectra were consistent with Cu^I with very little d⁹ character. Surface-enhanced O 1s spectra from the unexposed mineral revealed a surface species, with binding energy 0.95 ± 0.05 eV below the principal cuprous oxide peak, assigned to under-coordinated oxygen. A second surface species, with binding energy about 1 eV higher than the principal peak, was assigned to either hydroxyl derived from chemisorbed water vapour or surface oxygen dimers produced by restructuring of the cuprite fracture surface. The width of the principal O 1s peak was 0.66 ± 0.02 eV. The observed Cu L₃- and O K-edge absorption spectra were in good agreement with those simulated for the cuprite structure. After exposure of the fracture surface to ambient air, the low binding energy O 1s surface species was barely discernible, the original high binding energy O 1s surface species remained of comparable intensity, new intensity appeared at an even higher (∼1.9 eV) binding energy, and the Cu L_2,3-edge spectrum indicated the presence of Cu^II, consistent with the formation of a thin surface layer of Cu(OH)₂.     

The chemisorption of sulphur on W(100)

The interaction of sulphur vapour with a W(100) surface is studied in detail with Auger Electron Spectroscopy (AES), LEED, work function difference (Δ?) measurements and thermal desorption spectroscopy (TDS). The dissociative adsorption of S occurs on the W surface without reconstruction. Several LEED structures are observed which indicate repulsive adatom interactions. TDS shows that the desorption energy of atomic S decreases from about 8 eV at θ = 0.1 ML to about 3 eV near saturation in close vicinity of 1 ML. Above $\text{θ =}\text{3}\text{4}$ ML, S₂ desorbs in addition to S in a high temperature peak which saturates at about 1 ML. Sulphur in excess of about 1 ML is desorbed in two low temperature peaks of which the lower one consists not only of S and S₂ but also of S₃ and S₄.     

Détermination par spectroscopie auger,des sections efficaces d'ionisation de la couche L23 du magnésium et de l'aluminium sous impact d'ions He+

The L₂₃ Mg and L₂₃ Al Auger spectra excited by helium-ion bombardment have been studied. These spectra essentially show an intensive peak interpreted in terms of L₂₃ MM atomic-like and L₂₃ VV transitions. By integration of this peak, the Auger emission cross sections were determined and their variations as a function of the incident particle energy were studied from a few keV up to 100 keV. These results have been compared to the values of the ionization cross sections calculated in a classical binary encounter approximation (BEA). One observed a good agreement for the aluminium target. For the magnesium, the discrepancy in the low energy range shows that, in those case, the electronic promotion in a molecular orbital model added at the electronic excitation due to the direct Coulomb interaction.     

Distribution d'énergie des électrons secondaires émis par InP et GaP soumis à un bombardement d'ions Ar de 40 keV

The energy distributions N(E) of secondary electrons emitted from GaP and InP samples bombarded with 40 keV Ar⁺ ions have been studied by a retarding potential method and an electronic derivation. The spectra show beyond an intensive peak developed at 2 eV, a detailed spectrum between 80 and 140 eV. The analysis of this spectrum reveales Auger electrons corresponding to L₂₃(P) VV and L₂₃M_IV–V(Ga) V [or L₂₃(P) N_IV-V(In) V] transitions; moreover, peaks due to plasmon excitations and d band excitations can be distinguished.     

Life-time and surface effects on the L23 VV Auger spectra of aluminum

Electronic life-time and surface effects on the L₂₃ VV Auger spectrum of Al have been calculated. The resulting spectrum predicts a low energy secondary peak due to plasmon excitation and shows good agreement with experiment at the main peak region.     

Many-body effects in l2mm auger electron spectra of Ge(CH3)4 excited by Mg Kα X-rays

The Ge:L₂MM Auger electron spectra excited by Mg Kα X-rays from Ge(CH₃)₄ free molecules have been compared with the corresponding spectra excited by Al Kα X-rays. The Al Kα excited spectra have characteristic features of the diagram Auger transitions, because the excitation energy is far above the L₂ ionization threshold. The energy of Mg Kα photons is 1.21 eV below the Ge:L₂ ionization threshold and thus the Mg Kα excited L₂MM Auger electron spectra indicate many-body effects, post collision interaction (PCI) effects and spectator Auger satellite structures. The L₂M_4,5M_4,5 type spectrum displays both these features but the L₂M_2,3M_4,5 type spectrum has only a spectator Auger satellite structure, because the (3p⁻¹3d⁻¹nl) final state interferes with the (3s) hole state.     

The adsorption of nitric oxide on a silicon (100) 2 × 1 surface studied with Auger electron spectroscopy

We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a clean Si(100)2 × 1 surface at 300 and 550 K. Accurate measurement reeveal well resolved fine structure at Auger SiL_2.3VV transitions at 62 and 83 eV. These peaks can be attributed to SiO and SiN bonds. Furthermore, it is argued that the broadening in the SiLi_2.3VV Auger transition at 83 eV at 300 K may be composed of two nearby peaks, which could be attributed to two different kinds of chemical bonding, SiN and SiO. The absence of a peak at 69 eV at room temperature strongly suggests the NO adsorption on a Si(100)2 × 1 surface to be molecular. Dissociation of NO on the Si(100)2 × 1 surface is observed at 550 K.     

Energies and chemical shifts of the sulphur 1s level and the KL2L3(1D2) Auger line in H2S,SO2 and SF6

The sulphur 1s binding energies and KL₂L₃(¹D₂) Auger energies have been measured in gaseous H₂S, SO₂ and SF₆. The experimental data, including the chemical shifts, are compared with various theoretical ab initio results. Theoretical and experimental values agree within 1-2 eV for the chemical shift and the binding energy of the 1s level, provided in the latter case relaxation, relativistic and correlation corrections are applied. Likewise, Shirley's method²⁰, which uses empirical energies, predicts the Auger energies satisfactorily. The measured S 1s binding energies are 2478.5(1) eV, 2483.7(1) eV and 2490.1(1) eV, and KL₂L₃(¹D₂) Auger energies are 2098.7(1) eV, 2095.5(2) eV, 2092.6(1) eV for H₂S, SO₂ and SF₆, respectively. The chemical shift for the 1s electron is found to be greater than for the 2s or 2p electron and in better accord with the prediction of the potential model. Data suggest the molecular relaxation energy to be small compared with the atomic relaxation energy.