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1.
High purity alumina ceramics (99% Al2O3) was implanted by copper ion and titanium ion in a metal vapour vacuum arc (MEVVA) implanter, respectively. The influence of implantation parameters was studied varying ion fluence. The samples were implanted by 68 keV Cu ion and 82 keV Ti ion with fluences from 1 × 1015 to 1 × 1018 ions/cm2, respectively. The as-implanted samples were investigated by scanning electron microscopy (SEM), glancing X-ray diffraction (GXRD), scanning Auger microscopy (SAM), and four-probe method. Different morphologies were observed on the surfaces of the as-implanted samples and clearly related to implantation parameters. For both ion implantations, the sheet resistances of the alumina samples implanted with Cu and Ti ion fluences of 1 × 1018 ions/cm2, respectively, reached the corresponding minimum values because of the surface metallization. The experimental results indicate that the high-fluence ion implantation resulted in conductive layer on the surface of the as-implanted high purity alumina ceramics. 相似文献
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Ellipsometrically measured complex retractive index profiles in high energy P+31 ion implanted silicon have been compared with the phosphorus concentration profiles determined by in-depth profiling of the implanted surface using Auger electron spectroscopy in conjunction with in-situ ion sputtering. Structure was observed in the phosphorus profile which corresponds to structure in the complex refractive index profiles of unannealed specimens. This implies that the complex refractive index profile of the unannealed surface is sensitive to the concentration of the implanted species as well as the amount of structural disorder in the implanted layer. These results also indicate that the implanted phosphorus tends to build up in the more highly damaged regions, possibly through a radiation enhanced self-diffusion mechanism. 相似文献
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U. Dadwal R. Scholz M. Reiche P. Kumar S. Chandra R. Singh 《Applied Physics A: Materials Science & Processing》2013,112(2):451-456
GaN epitaxial layers were implanted by 100 keV H+ ions at different implantation temperatures (LN2, RT and 300 °C) with a fluence of 2.5×1017 cm?2. The implanted samples were characterized using Nomarski optical microscopy, AFM, XRD, and TEM. Topographical investigations of the implanted surface revealed the formation of surface blistering in the as-implanted samples at 300 °C and after annealing at higher temperature for the implantation at LN2 and RT. The physical dimensions of the surface blisters/craters were dependent on the implantation temperature. XRD showed the dependence of damage-induced stress on the implantation temperature with higher stress for the implantation at 300 °C. TEM investigations revealed the formation of a damage band in all the cases. The damage band was filled with large area microcracks for the implantation at 300 °C, which were responsible for the as-implanted surface blistering. 相似文献
5.
Fe ions of dose 8 × 1016 cm-2 are implanted into a ZnO single crystal at 180 keV. Annealing at 1073 K leads to the formation of zinc ferrite (ZnFe2O4), which is verified by synchrotron radiation X-ray diffraction (SR-XRD) and X-ray photoelectron spectroscopy (XPS). The crystallographically oriented ZnFe2O4 is formed inside the ZnO with the orientation relationship of ZnFe2O4 (111)//ZnO (0001). Superconducting quantum interference device (SQUID) measurements show that the as-implanted and post-annealing samples are both ferromagnetic at 5 K. The synthesized ZnFe2O4 is superparamagnetic, with a blocking temperature (TB = 25 K), indicated by zero field cooling and field cooling (ZFC/FC) measurements. 相似文献
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Single crystal α-Al2O3 wafers were implanted with 45 keV Zn ions up to a fluence of 1×1017 ions/cm2, and were then subjected to furnace annealing in oxygen atmosphere at different temperatures. Various techniques have been applied to study the creation of nanoparticles (NPs), defects and their thermal evolutions, as well as their effects on optical properties of Al2O3. Our results clearly show that Zn NPs have been synthesized in the as-implanted sample and they begin to be oxidized at 500 °C. Two broad photoluminescence bands appear in the Zn ion-implanted samples and their intensities depend on the annealing temperatures. The results have been interpreted in view of creation of the defects and NPs, Zn atoms diffusion as well as their thermal evolution during annealing. 相似文献
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对注入Ar+后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar+注入后,其光致发光谱中均出现了新的位于506nm处的发光峰;真空和空气气氛下的退火均对样品在506nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响.
关键词:
2O3')" href="#">Al2O3
离子注入
退火
光致发光谱 相似文献
8.
J. R. Kranik 《辐射效应与固体损伤》2013,168(1-4):81-92
Single crystal silicon has been implanted with nitrogen and phosphorus ions at MeV energies to fluences between 1016 and 1.6 × 1018 ions/cm2. Infrared transmission and reflection spectra in the range of 1.25 to 40 μm were measured for as-implanted samples and after various annealing treatments. Interference fringes were observed in the IR spectra which are produced by the interference of light which has been multiply reflected between the front surface and the buried layers. By detailed theoretical analyses of the interference fringe structure, we obtained refractive index profiles, which, under suitable interpretation, provide accurate measurements and several quantities of interest. These quantities are the range and straggling of the implanted ions, the depth of disordered layers, and the width of the order-disorder transition. Mechanisms for the refractive index changes which have been identified include amorphization of the implanted silicon, bulk compositional change in the buried layer, localized vibrational mode dispersion, and free electron dispersion. Experimental results and theoretical predictions are presented, demonstrating each of these mechanisms. 相似文献
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In this experiment, nitrogen ions were implanted into CZ-silicon wafer at 100 keV at room temperature with the fluence of 5 × 1015 N2+/cm2, followed by rapid thermal processing (RTP) at different temperatures. The single detector Doppler broadening and coincidence Doppler broadening measurements on slow positron beam were carried out to characterize the defects in the as-implanted silicon and RTP-treated samples. It is found that both nitrogen-vacancy complexes (N-Vsi) and oxygen-vacancy complexes (O-Vsi) produced by nitrogen implantation diffuse back to the sample surface upon annealing. But the N-Vsi and the O-Vsi complete with each other and give a summed effect on positron annihilation characteristics. It is shown that the N-Vsi win out the O-Vsi in as-implanted sample and by RTP at 650 °C, 750 °C, which make the S-parameter increase; O-Vsi plays a dominant role after annealing above 850 °C, which makes the S parameter decrease. 相似文献
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F. Simondet C. Venger G. M. Martin J. Chaumont 《Applied Physics A: Materials Science & Processing》1980,23(1):21-24
Depth profiles of 190 keV Cr implanted-GaAs have been measured by SIMS analysis. The as-implanted Cr profiles are approximately
Gaussian with good agreement between theory and experiment on the projected range. A fast migration of Cr is observed after
heat treatment under encapsulation, and even as soon as the silicon nitride film is deposited. There is no evidence for Cr
precipitation, even in the case of the largest implanted dose (1015 cm−2). 相似文献
11.
M. Abu-Kharma 《Journal of Molecular Spectroscopy》2005,232(2):369-374
Enhancement spectra of the collision-induced absorption (CIA) in the first overtone region 5000-7000 cm−1 of D2 in D2-N2 were studied at 298 K for a base density of D2 of 73 amagat and for partial densities of N2 in the range 150-370 amagat. The observed spectra were modeled with a total of 1176 components of double vibrational transitions. Binary and ternary absorption coefficients were determined from the integrated absorption of the band. Profile analysis of the spectra was carried out using the Birnbaum-Cohen line-shape function for the individual components of the band, and characteristic line-shape parameters were determined from the analysis. Good agreement was obtained between the experimental and calculated spectral profiles. 相似文献
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本文研究了不同能量(5—600keV)和不同剂量(1014-1016atom/cm2)下的P2+和P+注入〈100〉单晶硅后的损伤及退火行为。实验结果表明,P2+注入所产生的损伤总是大于P+注入所产生的损伤。由移位效率之比ND*(mol)/2ND*(atom)所表征的分子效应随入射能量的改变而变化并在100keV(P2+),50keV(P+)处达到极大值。P2+与P+注入的样品,退火后的载流子分布也有某些区别。我们认为,产生这些分子效应的基本原因是位移尖峰效应,但当入射离子的能量较高时,还应该考虑离子、靶原子之间的多体碰撞效应的贡献。
关键词: 相似文献
14.
本文以时间分辨的反射率测量结合背散射和沟道分析、透射电子显微镜分析,比较和研究了在77K温度下180keV,1×1014/cm2P2+和90KeV,2×1014/cm2P+注入硅于550℃退火时的固相外延过程。发现了P2+,P+注入硅样品的固相外延过程具有不同的特征。这种差异是由于P2+和P+在硅中引入不同的损伤造成的。P+注入的硅样品测量得到的时间分辨的反射谱是反常的。这种反常谱可用样品退火时从表面层到非晶硅层与从衬底到非晶硅层的双向外延的过程给出满意的解释。
关键词: 相似文献
15.
In order to study the effect of titanium ion implantation on the aqueous corrosion behavior of zirconium, specimens were implanted with titanium ions with fluence ranging from 1 × 1016 to 1 × 1017 ions/cm2, using a metal vapor vacuum arc (MEVVA) source at an extraction voltage of 40 kV. The valence states and depth distributions of elements in the surface layer of the samples were analyzed by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES), respectively. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted zirconium in a 1 M H2SO4 solution. It was found that a significant improvement was achieved in the aqueous corrosion resistance of zirconium implanted with titanium ions. The larger the fluence, the better is the corrosion resistance of implanted sample. Finally, the mechanism of the corrosion behavior of titanium-implanted zirconium was discussed. 相似文献
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In order to study the effect of copper ion implantation on the aqueous corrosion behavior, samples of zircaloy-4 were implanted with copper ions with fluences ranging from 1 × 1016 to 1 × 1017 ions/cm2, using a metal vapor vacuum arc source (MEVVA) operated at an extraction voltage of 40 kV. The valence states and depth distributions of elements in the surface layer of the samples were analyzed by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES), respectively. Glancing angle X-ray diffraction (GAXRD) was employed to examine the phase transformation due to the copper ion implantation. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted zircaloy-4 in a 1 M H2SO4 solution. It was found that a significant improvement was achieved in the aqueous corrosion resistance of zircaloy-4 implanted with copper ions when the fluence is smaller than 5 × 1016 ions/cm2. The corrosion resistance of implanted samples declined with increasing the fluence. Finally, the mechanism of the corrosion behavior of copper-implanted zircaloy-4 was discussed. 相似文献
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Z.H. Zhang X.L. Zhong H. Liao F. Wang J.B. Wang Y.C. Zhou 《Applied Surface Science》2011,257(17):7461-7465
In the present work, X-ray photoelectron spectroscopy (XPS) was used to investigate the composition depth profiles of Bi3.15Nd0.85Ti3O12 (BNT) ferroelectric thin film, which was prepared on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by chemical solution deposition (CSD). It is shown that there are three distinct regions formed in BNT film, which are surface layer, bulk film and interface layer. The surface of film is found to consist of one outermost Bi-rich region. High resolution spectra of the O 1s peak in the surface can be decomposed into two components of metallic oxide oxygen and surface adsorbed oxygen. The distribution of component elements is nearly uniform within the bulk film. In the bulk film, high resolution XPS spectra of O 1s, Bi 4f, Nd 3d, Ti 2p are in agreement with the element chemical states of the BNT system. The interfacial layer is formed through the interdiffusion between the BNT film and Pt electrode. In addition, the Ar+-ion sputtering changes lots of Bi3+ ions into Bi0 due to weak Bi-O bond and high etching energy. 相似文献
19.
S. V. Donskov A. K. Likhoded A. V. Luchinsky V. D. Samoilenko 《Physics of Atomic Nuclei》2009,72(12):2070-2075
The matrix element for the decay η′ → ηπ
0
π
0 is studied with allowance for the scalar mesons σ and α
0. Good agreement with experimental data is obtained. 相似文献
20.
W. Hoffbauer S. Wefing G. Klsters F. Frick M. Jansen 《Solid state nuclear magnetic resonance》1999,14(3-4)
The rotational dynamics of P4O6S and P4O7 in the solid state were studied by means of 31P NMR spectra of spinning and static powder samples in the temperature range of 153–295 K and 295–388 K, respectively. All spectra were simulated to confirm the type of the motion and to extract the time scales as a function of the temperature. Good agreement between experimental and theoretical data was obtained on the basis of a three-site jump model. For P4O6S, the activation energy and the pre-exponential factor derived from the lineshape simulations amount to 51(2) kJ/mol and 6(3)·1015 s−1. For P4O7, the spectral analysis yields an activation energy of 67(1) kJ/mol and a pre-exponential factor of 6(2)·1014 s−1. The dynamic behavior was checked independently by lineshape analyses under both MAS and static conditions. Activation energies are consistent within the errors for the lineshape analyses. Additionally, we have analyzed spin–lattice relaxation measurements, which show the correct trends for the activation energies. 相似文献