Resonant diffraction in stishovite near the <Emphasis Type="Italic">K</Emphasis> absorption edge of silicon

The X-ray resonant diffraction in a stishovite crystal near the K absorption edge of silicon (E _K = 1839 eV) is studied theoretically. For such a long wavelength, the only possible Bragg reflection is the 100 reflection, which is forbidden by the space group of the crystal. It can be excited solely due to anisotropy of the X-ray scattering amplitude. The crystal symmetry is used to determine the polarization and azimuthal dependence of the reflection intensity. Since this reflection is single, it can be detected upon diffraction from a powder, which substantially widens the possibilities of investigations. The numerical calculations of the energy dependences of the forbidden reflection intensity and the absorption coefficient demonstrate that the dipole-quadrupole, quadrupole-quadrupole, and dipole-octupole contributions to the resonant diffraction and absorption are small and that the dipole-dipole contribution is the most important one.     

Surface-state parameters from very low energy electron reflection data

A parametric form of the amplitude of elastic reflection of very low energy electrons is derived. The amplitude expression conforms to the results of an earlier analysis of a simple case of electron reflection called the quasi two-beam case. The parameters in the amplitude expression refer to: (1) the surface states of the crystal; (2) the band structure of the substrate crystal; and (3) absorption (inelastic scattering) in the energy range of the experiment The amplitude expression also includes parameters relating to (4) the behavior of the amplitude at infinity and at negative energy.The amplitude expression is used to parameterize existing experimental results for nickel (001) and for the surface formed by adsorption of sodium on nickel (001) to form the centered (2 × 2) structure. The parameterization employs previously-computed values of parameters relating to the nickel band structure [category (2) above], and parameters in categories (1), (3) and (4) are adjusted to fit the electron-reflection data. In the case of the sodium-covered surface it is shown that the shape of the intensity-energy curve and the general level of intensity relative to that for clean nickel depends critically on the surface-state parameters. Two surface states are needed to fit the intensity data The values of the surface-state parameters are: location relative to vacuum level: 2.5 ± 0.1, 6.9 ± 0.2eV; width: 4.2 ± 0.4, 7.5 ± 1.0eV. The classification and significance of surface-state resonances is discussed briefly.     

Propagation of high power helicons in n-indium antimonide crystal

The propagation of high power helicon in n-InSb has been analysed taking into account the heating of the carriers by the electric field of the wave. The momentum and energy transfer of the electrons have been taken to be due to acoustic phonons and polar optical phonons scattering at 77°K respectively. The sample is assumed to be finite and the wave is incident on the semiconductor-free space interface. Calculations have been made for phase constant, attenuation constant, reflection coefficient and the electron temperature as function of the magnetic field and the wave amplitude. The theoretical results are found to be in qualitative agreement with the experimental observations of Laurinavichyus and Pozhela[14].     

The influence of the substrate temperature on the photovoltaic properties of spray-deposited CdS:In thin films

Polycrystalline and highly transparent CdS:In thin films were produced by the spray pyrolysis (SP) technique at different substrate temperatures ranging from 350 to 490 °C on glass substrates. The effect of the substrate temperature on the photovoltaic properties of the films was investigated by studying the transmittance measurements, X-ray diffraction (XRD) patterns, scanning electron microscope (SEM) observations and the I-V plots. The transmittance measurements were used to estimate the band gap energy by the linear fit of (αhν)² versus hν. The band gap energy was found to be slightly increasing with the substrate temperature. XRD diffractograms show that a phase transition from the cubic to the hexagonal phase occurs by increasing the substrate temperature, beside more orientation of crystal growth. Also they show that complex cadmium compounds are still present till T_s ≈ 460 °C after which they practically disappear. From the linear I-V plots the resistivity was estimated and found to be strongly decreasing with the substrate temperature.     

Work function measurements with a high resolution electron energy loss spectrometer: Application to the interaction of oxygen with Ag(110)

The monochromatized electron beam of a high resolution electron energy loss (HREEL) spectrometer is used for accurate (±5 meV) measurement of the work function changes during exposure of a Ag(110) single crystal surface to oxygen. Absolute calibration of the results is made by comparison with Kelvin probe data. The procedure allows the precise determination of the electron impact energy, which is an important parameter for quantitative HREELS analysis. Furthermore, in the case of oxygen adsorbed on Ag(110), the occurrence of several LEED (n×1) superstructures enables a calibration of the HREELS data with respect to surface coverage.     

Reflection coefficient determination of the complex resonator mirrors in solid state laser

On the basis of pulse-energy measurement of Nd–YAG laser emission, the reflection coefficient of complex mirror is determined as a function of pumping energy and resonator parameters. It is shown that the reflection coefficient of complex mirror has the tendency to stabilize with increasing pumping energy above the threshold energy. The practical interest of this work is to determine the reflection coefficient of resonant mirror without using calibrated mirrors.     

Very low energy electron reflection at Cu(001) surfaces

Measurements of the coefficient of elastic reflection of very low energy electrons at Cu(001), Cu(001) (2 × 4)45°O and Cu(001)c(2 × 2)N surfaces are reported. The measurements refer to normally-incident electrons with kinetic energies E in the range 0.5–22 eV. The elastic reflection coefficient R_el was determined from separate observations of the total reflection coefficient and of the energy distribution of reflected electrons. For Cu(001) R_el is 0.55 at E = 0.5 eV and drops monotonically to 0.03 with increasing E, the maximum slope being at E = 3 eV. Theoretical calculations of R_el are reported. The reflection amplitude of the substrate crystal was parameterized using existing results of accurate band structure calculations, and the surface scattering matrix was evaluated for assumed surface scattering potentials. It is shown that to fit the observed R_el it is necessary to take account of both the image potential and the extension of the imaginary part of the crystal scattering potential into vacuum. From the fit, the range of the imaginary potential is 1.0 Å. For Cu(001) (2 × 4)45°O and Cu(001)c(2 × 2)N the values of R_el at E = 0.5 eV were 0.35 and 0.15, respectively. The effect of adsorption in reducing R_el is especially marked for E < 2 eV. Adsorption of either O or N results in an additional peak in R_el near E = 12 eV.     

Electronic surface resonances and crystal surface structure

A new method of determination of the lateral structure of crystal surfaces is presented. The method is based on earlier work showing the existence of resonances in the elastic scattering of low-energy electrons at crystal surfaces. The method consists of: (a) Measurement of the surface resonance band structure Ek_∥E, k_∥ respectively denote the electron energy and surface-parallel momentum for which resonances occur) and (b) Interpretation of E(k_∥) to determine the lateral variation of the effective potential acting on electrons at the surface.The surface resonance band structure is measured by a net-current electron reflection method. The measurement method is basically the same as used previously but here its precision is greatly enhanced by the use of digital methods of data handling including a digital filter to remove background due to inelastic and non-resonance elastic scattering. The surface resonance band structure is interpreted by a two-dimensional nearly-free electron scheme. In this scheme the interaction elements are Fourier coefficients of an effective potential which is an average of a pseudopotential with respect to the depth distribution of electron density in a surface resonance — the surface-weighted pseudopotential. Experimental surface resonance band structure for Ni(001), Ni(001) p(2 × 2)O and two different Ni(001) c(2 × 2)O surfaces (one of them with an oxygen-saturated Ni substrate) are presented for E = 1–30 eV and k_∥ running halfway from $\text{}\text{?}$gG towards H? in the surface Brillouin zone for Ni(001). The experimental results are fitted, using the nearly-free electron scheme, to determine the Fourier coefficients of the surface-weighted pseudopotential. Surface potential variations synthesized from the above data are discussed in comparison with the atomic arrangements known from LEED. It is demonstrated that the new method can give a correct picture of the lateral structure of surfaces. It is emphasized that these results are obtained without costly equipment or computations called for by other methods.     

氮化铝单晶薄膜的ECR PEMOCVD低温生长研究

采用电子回旋共振等离子体增强金属有机物化学气相沉积（ECR－PEMOCVD）技术，在c轴取向的蓝宝石即α Al2O3（0001）衬底上，以氮化镓（GaN）缓冲层和外延层作为初始层，分别以高纯氮气（N2）和三甲基铝(TMAl)为氮源和铝源低温生长氮化铝（AlN）薄膜.并利用反射高能电子衍射（RHEED）、原子力显微镜（AFM）和x射线衍射（XRD）等测量结果，研究了氢等离子体清洗、氮化和GaN初始层对六方AlN外延层质量的影响，从而获得解理性与α Al2O3衬底一致的六方相AlN单晶薄膜，其XRD半高宽为1 关键词： AlN 氢等离子体清洗 氮化 GaN     

Experimental test of a new method for phase determination using gamma resonance spectroscopy

We have performed an experimental study of the feasability to employ resonance scattering of γ-radiation in order to measure directly the phase of the structure factor which is required in X-ray crystal structure determination. The phases of the (020) and the (040) reflection of a K₃Fe(CN)₆ single crystal were determined by measuring the interference between nuclear resonance scattering and by electronic scattering.     

Retrieval of depth profile of nano-scale thin films by one directional polarization analysis in neutron specular reflectometry

Recently it has been shown that the modulus and phase of complex reflection coefficient can be determined using a magnetic substrate and polarized neutrons. Several other methods have also been worked out based on the measurement of polarizations of reflected neutrons from magnetic reference layers and magnetic substrate. However, due to the fact that available reflectometers are limited in the choice of polarization of reflected beam in the same direction as the polarization of the incident beam, neither of the methods, which are based on polarization analysis, have been proven to be experimentally practical. In this paper, we have proposed a new method for determining the phase of reflection coefficient that is based on two measurements of polarization, which correspond to two magnetic fields with the same magnitude and different orientations. The polarization analysis is performed in the same direction as the polarization of the incident beam and is well suited for available reflectometers.The problems envisaged in implementation of the method are also discussed.     

Kamers-Kronig关系在反射太赫兹时域光谱测量中的应用

太赫兹时域光谱技术是材料介电参数测量的重要方法,是材料研究、鉴别和分析的重要工具。太赫兹时域光谱技术是一种太赫兹频段的相干探测技术,可以同时获得太赫兹波的幅度和相位信息,通过透射测量、反射测量可获得材料的复透射率或复反射率来反演材料的电磁参数。在实际中,大多数被测材料太赫兹波无法穿透,或者不满足透射材料参数反演需要的弱吸收近似,因此反射测量更具应用价值。在已发表的研究结果中,研究人员仍普遍采用透射测量的方案,很少见使用反射测量方案获取材料参数。究其原因,在反射测量时,由于样品和参考板位置的放置误差很难消除,从而导致无法准确提取反射相位。将光学领域广泛使用的Kamers-Kronig关系应用于太赫兹时域光谱系统反射测量中,以解决反射测量中无法准确获得相位信息从而无法提取介电参数的问题。为了验证Kamers-Kronig关系的准确性,一方面,通过透射、反射方法分别测量硅材料的复透射率、复反射率并反演了其材料参数,两者的反演结果一致性较好。另一方面,利用同一组硅的反射测量数据分别用Kamers-Kronig关系和最大熵法对其材料参数进行反演,两种处理方法也可以实现相互印证,进一步确保了提取数...     

Perturbation theories in low energy electron diffraction: t-matrix and τ-matrix approaches

Two perturbation approaches to low energy electron diffraction (LEED) are discussed within the inelastic collision model: t-matrix approach recently proposed by Tong, Rhodin and Tait (all scatterings treated to third order), and τ-matrix approach (layer scattering is treated exactly while all interlayer scatterings are treated to third order). Both approaches are applied to the calculation of rotation diagrams for the (001) surface of Al. In the case of a single layer third-order perturbation results for the magnitude and phase of the scattering amplitude are compared to the exact results and found to be in fairly good agreement over a large range of elastic scattering cross-sections. When all scatterings (up to third order) are considered for an infinite crystal, the differences between the exact and third-order t-matrix perturbation resutls become quite substantial ; marked improvement is achieved if the layer scattering is treated exactly, but the remaining difference may be significant enough (depending on the application) to suggest that interlayer scattering may not always be treated by perturbation, and thus renormalization of the type proposed by Pendry may be necessary.     

Decay of photoinduced oscillations of the optical reflection coefficient of bismuth

A model describing the decay of photoinduced oscillations of the optical reflection coefficient R of bismuth is constructed, taking the crystal lattice anharmonicity into account. The decay time of oscillations of R is calculated as a function of the energy density of a laser pulse. The results of calculations explain the experimental data on the anomalously strong decay of oscillations of the optical reflection coefficient of bismuth (the decay time decreases by more than an order of magnitude with an increase in the laser pulse energy density from 0 to 4 mJ/cm²).     

Optical and structural parameters of the ZnO thin film grown by pulsed filtered cathodic vacuum arc deposition

Transparent conductive ZnO film was deposited on glass substrate by pulsed filtered cathodic vacuum arc deposition (PFCVAD). Optical parameters such as absorption coefficient α, the refractive index n, energy band gap E_g and dielectric constants have been determined using different methods. Kramers-Kronig and dispersion relations were employed to determine the complex refractive index and dielectric constants using reflection data in the ultraviolet-visible-near infrared regions. The spectra of the dielectric coefficient were used to calculate the energy band gap and the value was 3.24 eV. The experimental energy band gap was found to be 3.22 eV for 357 nm thick ZnO thin film. The envelope method was also used to calculate the refractive index and the data were consistent with K-K relation results. The structure of the film was analyzed with an x-ray diffractometer and the film was polycrystalline in nature with preferred (002) orientation.     

Phase,zeros and poles of the transmission in quantum waveguides with an attached resonator and waveguide superlattices

This work reports on a study of electron transport in two-dimensionally-defined waveguide superlattices modeled by a lateral quantum waveguide with different numbers of attached quantum stubs. It is found that for the system with a single stub, the transmission amplitude exhibits pairs of zeros and poles in the complex-energy plane and the phase of the transmission coefficient drops sharply by π when the transmission passes a zero. This co-occurrence phenomenon of the transmission zero and the phase discontinuity is identical to the feature observed in a recent double-slit-like experiment by Schusteret al.[Nature385, 417 (1997)]. When two or more quantum stubs are attached to the quantum waveguide, each transmission zero seen in the single-stub structure develops into a group of zeros and the phase of the transmission coefficient shows, in correspondence to the group of zeros, a multiple-drop structure. However, not all poles of the waveguide superlattices are found to be paired with zeros and poles that are not paired with zeros are found to be located, in the complex energy plane, at the two sides of a multiple-zero region.     

Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy

The crystal structure of GaAs nanowhiskers grown by molecular-beam epitaxy on Si(111) and Si(100) substrates is investigated using reflection high-energy electron diffraction (RHEED). It is revealed that, in both cases, the electron diffraction images contain a combination (superposition) of systems of reflections characteristic of the hexagonal (wurtzite and/or 4H polytype) and cubic (sphalerite) phases of the GaAs compound. The growth on the Si(111) substrates leads to the formation of nanowhiskers with hexagonal (wurtzite and/or 4H polytype) and cubic (sphalerite) structures with one and two orientations, respectively. In the case of the Si(100) substrates, the grown array contains GaAs nanowhiskers that have a cubic structure with five different orientations and a hexagonal structure with eight orientations in the (110) planes of the substrate. The formation of the two-phase crystal structure in nanowhiskers is explained by the wurtzite—sphalerite phase transitions and/or twinning of crystallites.