Study of band offsets in InN/Ge heterojunctions

InN layers were directly grown on Ge substrate by plasma-assisted molecular beam epitaxy (PAMBE). The valence band offset (VBO) of wurtzite InN/Ge heterojunction is determined by X-ray photoemission spectroscopy (XPS). The valence band of Ge is found to be 0.18 ± 0.04 eV above that of InN and a type-II heterojunction with a conduction band offset (CBO) of ~ 0.16 eV is found. The accurate determination of the VBO and CBO is important for the design of InN/Ge based electronic devices.     

Surface stoichiometry of La0.7Sr0.3MnO3 during in vacuo preparation; A synchrotron photoemission study

We present a study of the surface stoichiometry and contamination of La_0.7Sr_0.3MnO₃ thin films following exposure to air and subsequent in vacuo preparation. Samples were studied using both soft X-ray synchrotron photoemission (hν = 150 to 350 eV) and traditional Mg-Kα XPS (hν = 1253.6 eV) whilst annealing incrementally to ≈ 510°C in low pressures of O₂. In all cases, a Mn depleted and Sr rich surface oxide layer is observed, it is of reduced crystalline quality and is charge depleted. This surface layer is weakly affected by subsequent annealing, and is partially reversed by annealing in higher O₂ pressure. Surface carbon contamination is incrementally removed by annealing at increased temperatures, and at 270 °C, it is reduced to ≈ 0.4% of the topmost unit cell. The modification of the surface stoichiometry and electronic properties is consistent with the reported loss of magnetic properties in thin LSMO films.     

Adsorption of O2 and CO2 on the Si(111)-7 × 7 surfaces

The interaction of O₂ and CO₂ with the Si(111)-7 × 7 surface has been studied with X-ray photoelectron spectroscopy (XPS). It was found that both O₂ and CO₂ molecules can readily oxidize the Si(111)-7 × 7 surface to form thin oxide films. Two oxygen species were identified in the oxide film: oxygen atoms binding to on-top sites of adatom/rest atoms with an O 1s binding energy of ~ 533 eV as well as to bridge sites of adatom/rest atom backbonds at ~ 532 eV. These two oxygen species can be interconverted thermally during the annealing process. Due to the low oxidation capability, the silicon oxide film formed by CO₂ has a lower O/Si ratio than that of O₂.     

Band offsets at ZnO/SiC heterojunction: Heterointerface in band alignment

Pulsed laser deposited ZnO layers on 6H-SiC substrates showed the six-fold symmetry, indicating a two-dimensional epitaxial growth mode. X-ray photoelectron spectroscopy was employed to study the valence band discontinuity and interface formation in the ZnO/6H-SiC heterojunction. The valence band offset was measured to be 1.38 ± 0.28 eV, leading to a conduction band offset value of 1.01 ± 0.28 eV. The resulting band lineup in epitaxial ZnO/6H-SiC heterojunction is determined to be of staggered-type alignment.     

Energy band alignment of MgO (111)/ZnO (0002) heterojunction determined by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy (XPS) was used to measure the energy discontinuity in the MgO (111)/ZnO (0002) heterostructure. The valence band offset (VBO) was determined to be 1.22±0.23 eV and a type-I heterojunction with a conduction band offset (CBO) of 3.24±0.23 eV was obtained. The discrepancy of VBO values between MgO/ZnO and ZnO/MgO heterojunctions was mainly attributed to the internal electric field induced by spontaneous polarization effect in ZnO layer.     

Chemical diffusion of water in the double perovskites Ba4Ca2Nb2O11 and Sr6Ta2O11

The mechanism and kinetics of water incorporation in the double perovskites Ва₄Ca₂Nb₂O₁₁ and Sr₆Ta₂O₁₁ has been investigated (T = 300÷500 °C and aH₂O = 1 · 10^− 3÷2.2 · 10^− 2). The formation of hydration products Ba₄Ca₂Nb₂O₁₁·xH₂O and Sr₆Ta₂O₁₁·xH₂O (0.2 < x < 0.50) was limited by the diffusion of H₂O. It has been found that the concentration dependences of D˜_H2O are the same for both samples: small increasing of D˜_H2O with increasing x. The temperature dependences of the chemical diffusion coefficients of water for compositions of Ba₄Ca₂Nb₂O₁₁·0.35H₂O and Sr₆Ta₂O₁₁·0.35H₂O could be described with close activation energies of E_a = 0.38 ± 0.03 eV and E_a = 0.49 ± 0.03 eV, respectively. The chemical diffusion coefficients of water are nearly one order of magnitude smaller for tantalate Sr₆Ta₂O₁₁. This result correlates with lower oxygen and proton conductivities in Sr₆Ta₂O₁₁ as the consequence of lower mobilities.     

XRD and XPS characterisation of transition metal silicide thin films

Binary transition metal silicides based on the systems Ti–Si, Fe–Si, Ni–Si and Cr–Si were fabricated on Si wafers by means of ion-beam co-sputter deposition and subsequent annealing. The crystalline structures of the phases formed were identified from the characteristic patterns acquired by means of X-ray diffraction (XRD) measurements. The phase formation sequences were described by means of the Pretorius' effective heat of formation (EHF) model. For the Ti–Si, Fe–Si and Ni–Si systems, single phase thin films of TiSi₂, β-FeSi₂ and NiSi₂ were generated as the model predicts, while a mixture of CrSi + CrSi₂ phases was obtained for the Cr–Si system. The surface chemical condition of individual specimens was analysed by using X-ray photoelectron spectroscopy (XPS). The chemical shifts of transition metal 2p_3/2 peaks from their metallic to silicide states were depicted by means of the Auger parameters and the Wagner plots. The positive chemical shift of 2.0 eV for Ni 2p_3/2 peak of NiSi₂ is mainly governed by the initial-state effects. For the other silicide specimens, the initial-state and final-state effects may oppose one another with similar impact. Consequently, smaller binding energy shifts of both negative and positive character are noted; a positive binding energy shift of 0.3 eV for the Fe 2p_3/2 level was shown for β-FeSi₂ and negative binding energy shifts of 0.1 and 0.3 eV were determined for CrSi + CrSi₂ and TiSi₂, respectively.     

Spectroscopic characterization of Tm3+:TeO2–K2O–Nb2O5 glasses for 2-μm lasing applications

We have performed detailed experiments to investigate the spectroscopic properties of a new type of tellurite based host doped with thulium: Tm₂O₃:(0.70)TeO₂–(0.15)K₂O–(0.15)Nb₂O₅ having Tm₂O₃ concentrations of 0.125, 0.25, 0.5, and 1.0 mol%. By performing a Judd–Ofelt analysis of the absorption bands, we obtained average radiative lifetimes of 2.57±0.20 and 0.35±0.01 ms for the ³H₄ and ³F₄ levels, respectively. Furthermore, we also observed that an increase in the Tm₂O₃ concentration from 0.125 to 1.0 mol% results in a decrease of the measured fluorescence lifetime from 814 to 439 μs and from 258 to 47 μs for the ³H₄ and ³F₄ levels, respectively, due to efficient non-radiative decay. The highest quantum efficiency of 32% was obtained for the sample doped with 0.125 mol% Tm₂O₃ for the ³H₄ level. Results show that cross relaxation becomes important as the ion concentration is increased, leading to the quenching of the 1460-nm band and enhancement of the 1860-nm emission. The highest emission cross section of 6.85×10^?21 cm² measured for the 1860-nm band reveals the potential of this host for the development of 2-μm lasers in bulk glass as well as fiber media.     

Oxygen non-stoichiometry and electrical conductivity of Pr2−xSrxNiO4±δ with x = 0–0.5

Oxygen non-stoichiometry and electrical conductivity of the Pr_2−xSr_xNiO_4±δ series with x = 0.0–0.5 were investigated in Ar/O₂ (pO₂ = 2.5 to 21 000 Pa) within a temperature range of 20–1000 °C. The equilibrium values of oxygen non-stoichiometry and electrical conductivity of these nickelates were determined as functions of temperature and oxygen partial pressure (pO₂). The nickelates with x = 0–0.5 appear to be p-type semiconductors in the investigated temperature and pO₂ ranges. The nickelates with x = 0.3–0.5 show very feebly marked pO₂ dependencies of the conductivity. Pr_1.7Sr_0.3NiO_4±δ shows the anomalies of the conductivity versus oxygen partial pressure which can be related to the orthorhombic–tetragonal crystal structure transformations. The conductivity of the Pr_2−xSr_xNiO_4±δ samples correlates with the average oxidation state of the nickel cations. The samples with x = 0.5 have the highest nickel oxidation state (≈ 2.5+), the highest [Ni³⁺]/[Ni²⁺] ratio close to 1 and show the highest conductivity (≈ 120 S/cm) in the whole pO₂ and temperature ranges investigated.     

DFT study of carbon monoxide adsorption on α-Al2O3(0001)

The adsorption of CO on α-Al₂O₃(0001) was studied using the DFT-GGA computational method and on α-Al₂O₃ powder experimentally by Infra red spectroscopy. The core and valence level regions of α-Al₂O₃(0001) single crystal surface were also studied experimentally. Ar ions sputtering of the surface results in a slight but reproducible decrease in the XPS O2p lines in the valence band regions due to preferential removal of surface (and near surface) O atoms. Core level XPS O1s and Al2p further confirmed oxygen depletion with an associated surface stoichiometry close to Al₂O_2.9. The adsorption energy of CO was computed and found equal to 0.52 eV for θ = 0.25, it decreased to 0.42 eV at θ = 1. The IR frequency of νCO was also computed and in all cases it was blue shifted with respect to gas phase CO. The shift, Δν, decreased with increasing coverage where it was found equal to 56 cm^? 1 for θ = 0.25 and decreased to 30 cm^? 1 for θ = 1. Structural analyses indicated that the change in the adsorption energy and the associated frequency shift is due to surface relaxation upon adsorption. Experimentally the adsorption of CO gave rise to one main IR peak at 2154 cm^? 1 at 0.3 Torr and above. Two far smaller peaks are also seen at lower pressures of 0.03–0.2 Torr at 2189 and 2178 cm^? 1. The isosteric heat of adsorption was computed for the IR band at 2154 cm^? 1 and was found equal to 0.2 eV which did not change with coverage in the investigated range up to θ = 0.6.     

Surface structure of γ-Fe2O3(111)

The surface structure of γ-Fe₂O₃(111) has been investigated with a range of surface techniques. Two different surface structures were discovered depending upon surface preparation techniques. Sputtering followed by annealing in vacuum produced a reduced surface characterised by a (2 × 2) LEED pattern, whereas sputtering followed by annealing in 1 × 10^? 6 mbar oxygen produced a surface characterised by a (√3 × √3)-R30° LEED pattern. The latter appears to be a very low conductivity surface, whereas the former has the band gap expected for maghemite (~ 2.0 eV). We propose that the reduced surface is a magnetite-like layer, whereas the oxidised surface is an Fe₂O₃-like layer.     

Tm2O3相对于Si的能带偏移研究

利用分子束外延系统在Si (001) 衬底上制备了单晶Tm₂O₃薄膜, 利用X射线光电子能谱研究了Tm₂O₃相对于Si的能带偏移. 得出Tm₂O₃相对于Si的价带和导带偏移分别为3.1 eV± 0.2 eV和1.9 eV± 0.3 eV, 并得出了Tm₂O₃的禁带宽度为6.1 eV± 0.2 eV. 研究结果表明Tm₂O₃是一种很有前途的高k栅介质候选材料. 关键词： 2O₃')" href="#">Tm₂O₃ X射线光电子能谱 能带偏移     

Ab initio study of Yb on the Ge(111)–(3 × 2) and Si(111)–(3 × 2) surfaces

The surface reconstruction, 3 × 2, induced by Yb adsorption on a Ge (Si)(111) surface has been studied using first principles density-functional calculation within the generalized gradient approximation. The two different possible adsorption sites have been considered: (i) H₃ (this site is directly above a fourth-layer Ge (Si) atom) and (ii) T₄ (directly above a second-layer Ge (Si) atom). We have found that the total energies corresponding to these binding sites are nearly the same, indeed for the Yb/Ge (Si)(111)–(3 × 2) structure the T₄ model is slightly energetic by about 0.01 (0.08) eV/unitcell compared with the H₃ model. In particular for the Ge sublayer, the energy difference is small, and therefore it is possible that the T₄, H₃, or T₄H₃ (half of the adatoms occupy the T₄ adsorption site and the rest of the adatoms are located at the H₃ site) binding sites can coexist with REM/Ge(111)–(3 × 2). In contrast to the proposed model, we have not determined any buckling in the Ge = Ge double bond. The electronic band structures of the surfaces and the corresponding natures of their orbitals have also been calculated. Our results for both substrates are seen to be in agreement with the recent experimental data, especially that of the Yb/Si(111)–(3 × 2) surface.     

Annealing temperature dependent on structural,optical and electrical properties of indium oxide thin films deposited by electron beam evaporation method

In the present work the influence of annealing temperature on the structural and optical properties of the In₂O₃ films deposited by electron beam evaporation technique in the presence of oxygen was studied. The deposited films were annealed from 350 to 550 °C in air. The chemical compositions of In₂O₃ films were carried out by X-ray photoelectron spectroscopy (XPS). The film structure and surface morphologies were investigated as a function of annealing temperature by X-ray diffraction (XRD) and atomic force microscopy (AFM). The structural studies by XRD reveal that films exhibit preferential orientation along (2 2 2) plane. The refractive index (n), packing density and porosity (%) of films were arrived from transmittance spectral data obtained in the range 250–1000 nm by UV–vis-spectrometer. The optical band gap of In₂O₃ film was observed and found to be varying from 3.67 to 3.85 eV with the annealing temperature.     

Transparent CdO/n-GaN(0001) heterojunction for optoelectronic applications

Undoped CdO films were prepared by sol–gel method. Transparent heterojunction diodes were fabricated by depositing n-type CdO films on the n-type GaN (0001) substrate. Current–voltage (I–V) measurements of the device were evaluated, and the results indicated a non-ideal rectifying characteristic with I_F/I_R value as high as 1.17×10³ at 2 V, low leakage current of 4.88×10⁻⁶ A and a turn-on voltage of about 0.7 V. From the optical data, the optical band gaps for the CdO film and GaN were calculated to be 2.30 eV and 3.309 eV, respectively. It is evaluated that interband transition in the film is provided by the direct allowed transition. The n-GaN (0001)/CdO heterojunction device has an optical transmission of 50–70% from 500 nm to 800 nm wavelength range.     

Interface Mn nanoclusters in YMnO3/Si ferroelectric gate structures revealed by electron magnetic resonance

In this work, systematic X-band electron magnetic resonance (EMR) studies for YMnO₃/Si ferroelectric gate structures were performed to trace a variation of interface characteristics as different sputtering condition of O₂/(Ar + O₂) ratio. Our result showed that the EMR signal intensities were increased with increasing O₂/(Ar + O₂) ratio. In addition, it was suggested from detailed analyses that the observed EMR signals could be originated from Mn nanoclusters existing in both the polycrystalline Y₂O₃ layer and the amorphous Si-enriched Y–Si interface layer in YMnO₃/Si thin film structure. And also, a correlation between the decrease of crystallinity in YMnO₃/Si film and the content of Mn nanoclusters within the polycrystalline Y₂O₃ layer and/or the amorphous Y–Si layer was discussed.     

Oxygen permeation characteristics of zirconia with surface modification

Yttria-stabilized zirconia (YSZ) can be used as an oxygen-permeating membrane at elevated temperature (> 1400 °C) due to its chemical and mechanical stability. It was previously shown that the oxygen transport through YSZ membrane in reducing oxygen partial pressure (P_O2) was highly influenced by the surface-exchange kinetics that can be improved by porous surface coating layers such as YSZ, GDC (Gd-doped ceria) or YSZ–GDC mixture [H.J. Park, G.M. Choi, J. Eur. Ceram. Soc. 25 (2005) 2577]. However, the increased oxygen flux was still lower than that estimated assuming bulk-diffusion limit and rapidly decreased with time due to the sintering of coating layers and the reaction between bulk YSZ and coating layers. In this study, the oxygen fluxes through YSZ with LaCrO₃, GDC + LaCrO₃ (bilayer), LaCrO₃ + 5 wt.% GDC (mixture), or LaCr_0.7Co_0.3O₃ coatings were measured under controlled P_O2 gradient (permeate-side P_O2: ∼ 3 × 10^− 12 atm, feed-side P_O2: 2 × 10^− 10–2 × 10^− 8 atm) at 1600 °C. The oxygen flux drastically increased with these coatings. The highest increase in oxygen flux was shown with GDC + LaCrO₃ (bilayer) coating and was maintained for a long time. The presence of highly catalytic Ce ions while maintaining porous structure in the coating layer may explain the observation. The prevention of formation of resistive layer due to ceria coating may also be partly responsible for the observation.     

Electronic core levels of hydroxyls at the surface of chromia related to their XPS O 1s signature: A DFT + U study

The Cr 2p and O 1s binding energy (BE) levels have been calculated by first principles methods for different models of hydroxylated (0001)-Cr₂O₃ surfaces. Several surface terminations have been considered. The calculations allow us to reproduce the O 1s shifts between O in oxide and OH groups. It is found that two main effects account for the OH binding energy shifts. On the one hand, the increased covalency of the O–H bond with respect to the Cr–O bond, lowers the electronic O (1s and 2p) energy, and in consequence the BE of the core levels (O 1s) are higher. On the other hand, the lower the OH coordination number, the higher the valence and core levels energy, and the lower the BE. Consequently, mono-coordinated hydroxyls have a binding energy near that of O^2? in the oxide (ΔBE_OH–O = ? 0.2–0.0 eV). Two-fold coordinated hydroxyls have a slightly higher BE (ΔBE_OH–O = + 0.3 eV). Three-fold coordinated OH groups have a higher binding energy (ΔBE_OH–O = + 0.6?0.7 eV), corresponding to that experimentally measured for OH groups. Finally, water adsorbed above OH groups exhibits a still higher BE (ΔBE_HOH–O = + 0.9–1.0 eV). The ΔBE are slightly under-estimated under the initial state approximation, and overestimated under the final state (Z + 1) approximation.     

Study on visible luminescence of the Tm3 +: 1D2 → 3 F4 emission state in lead borate titanate aluminumfluoride glasses

This paper reports the visible luminescence properties of ¹D₂ state of Tm^3 + -doped lead borate titanate aluminumfluoride (LBTAFTm) glasses. The absorption and luminescence was analyzed within the frame work of Judd-Ofelt model. The reliability of J-O intensity parameters obtained from the experimental oscillator strengths have satisfactorily been correlated with the calculated oscillator strengths with small r.m.s deviation of ± 0.12 × 10^-6 by the least square fit analysis. Upon 359 nm excitation, the luminescence spectra show only one emission band at 458 nm (blue) corresponding to the ¹D₂ → ³ F₄ transition in the spectral region 400–500 nm. No luminescence quenching has been observed with the increase of Tm^3 + concentration. The decay profiles of the ¹D₂ level have shown single-exponential nature for all the concentrations and the decay times were found to decrease with the increase of concentration. The stimulated emission cross-section (σ_e) for the observed emission transition has also been computed. The large quantum efficiency (η) of the ¹D₂ level suggests the utility of LBTAFTm glass as a potential host for optical device applications at 458 nm emission wavelength.