Quantum size effect in low energy electron diffraction of thin films

Low energy electron microscopy (LEEM) is used to study the quantum size effect (QSE) in electron reflectivity from thin films. Strong QSE interference peaks are seen below 20 eV for Cu and Ag films on the W(1 1 0) surface and Sb films on the Mo(0 0 1) surface. Simple inspection of QSE interference peaks reveals that all three metals grow atomic layer-by-atomic layer. Layer-specific I(V) spectra obtained with LEEM permit structural analysis by full dynamical multiple scattering LEED calculations for a layer-by-layer view of thin film structure.     

Real-space study of the growth of magnesium on ruthenium

The growth of magnesium on ruthenium has been studied by low-energy electron microscopy (LEEM) and scanning tunneling microscopy (STM). In LEEM, a layer-by-layer growth is observed except in the first monolayer, where the completion of the first layer in inferred by a clear peak in electron reflectivity. Desorption from the films is readily observable at 400 K. Real-space STM and low-energy electron diffraction confirm that sub-monolayer coverage presents a moiré pattern with a 12 Å periodicity, which evolves with further Mg deposition by compressing the Mg layer to a 22 Å periodicity. Layer-by-layer growth is followed in LEEM up to 10 ML. On films several ML thick a substantial density of stacking faults are observed by dark-field imaging on large terraces of the substrate, while screw dislocations appear in the stepped areas. The latter are suggested to result from the mismatch in heights of the Mg and Ru steps. Quantum size effect oscillations in the reflected LEEM intensity are observed as a function of thickness, indicating an abrupt Mg/Ru interface.     

III–V on silicon: Observation of gallium phosphide anti-phase disorder by low-energy electron microscopy

The formation of anti-phase disorder is a major obstacle in the heteroepitaxy of III–V semiconductors on silicon. For an investigation of the anti-phase domain (APD) structure of GaP/Si(100) samples on mesoscopic length scales, we applied dark-field imaging in a low-energy electron microscope (LEEM) to thin GaP films grown on Si(100) substrates by metal organic vapor phase epitaxy (MOVPE). A contamination-free transfer of the samples from the MOVPE ambient to the ultra-high vacuum chamber of the microscope ensured that the atomically well-ordered, P-rich (2 × 2)/c(4 × 2) reconstruction of the surface was preserved. Mutually perpendicular oriented domains of the characteristic GaP(100) reconstruction identify the APDs in the GaP film at the surface and enabled us to achieve high contrast LEEM images. Striped patterns of APDs reflect the regular terrasse structure of the two-domain Si(100)(2 × 1) substrate far away from defects. APDs in the proximity of the defects have larger lateral extensions and are arranged in target pattern-like structures around the defects. In contrast to transmission electron microscopy, which was also applied in a specific dark-field mode for comparison, the characterization of anti-phase disorder by LEEM is non-destructive, does not require elaborate sample preparation, and addresses extended length scales.     

Surface modification of Ni and Co metal nanowires through MeV high energy ion irradiation

Nickel (Ni) and cobalt (Co) metal nanowires were fabricated by using an electrochemical deposition method based on an anodic alumina oxide (Al₂O₃) nanoporous template. The electrolyte consisted of NiSO₄ · 6H₂O and H₃BO₃ in distilled water for the fabrication of Ni nanowires, and of CoSO₄ · 7H₂O with H₃BO₃ in distilled water for the fabrication of the Co ones. From SEM and TEM images, the diameter and length of both the Ni and Co nanowires were measured to be ∼ 200 nm and 5–10 μm, respectively. We observed the oxidation layers in nanometer scale on the surface of the Ni and Co nanowires through HR–TEM images. The 3 MeV Cl²⁺ ions were irradiated onto the Ni and Co nanowires with a dose of 1 × 10¹⁵ ions/cm². The surface morphologies of the pristine and the 3 MeV Cl²⁺ ion-irradiated Ni and Co nanowires were compared by means of SEM, AFM, and HR–TEM experiments. The atomic concentrations of the pristine and the 3 MeV Cl²⁺ ion-irradiated Ni and Co nanowires were investigated through XPS experiments. From the results of the HR–TEM and XPS experiments, we observed that the oxidation layers on the surface of the Ni and Co nanowires were reduced through 3 MeV Cl²⁺ ion irradiation.     

Surface structure and morphology of InAs(1 1 1)B with/without gold nanoparticles annealed under arsenic or atomic hydrogen flux

We have investigated the structure and morphology of the InAs(1 1 1)B surface using Low Energy Electron Diffraction (LEED), Scanning Tunneling Microscopy (STM) and Scanning Electron Microscopy (SEM). The surface was prepared by annealing in the presence of an arsenic or atomic hydrogen pressure. A (2 × 2) reconstruction that changes into a (1 × 1) unreconstructed surface after prolonged annealing was observed irrespective of preparation method, while the surface morphology was distinctly different in the two cases. Detailed atomic scale models are proposed to explain the behavior. Deposition of Au aerosol nanoparticles on the sample prior to annealing was found to have no effect on the surface reconstruction. The Au particles were found to sink into the surface.     

Self-limited growth of the CaF nanowire on the Si(5 5 12)-2 × 1 template

The atomic structure and interfacial bonding of the ordered-and-isolated CaF nanowires on Si(5 5 12)-2 × 1 have been disclosed by scanning tunneling microscopy and synchrotron photoemission spectroscopy. Initially, CaF molecules dissociated from thermally deposited CaF₂ molecules are adsorbed preferentially on the chain structures of Si(5 5 12)-2 × 1 held at 500 °C. With increasing CaF₂ deposition amount, one-dimensional (1D) CaF nanowires composed of (113) and (111) facets are formed. The line density of these CaF nanowires increases as a function of deposition amount. Finally, at a submonolayer coverage, the surface is saturated with these 1D nanowires except for the (225) subunit, while the original period of Si(5 5 12)-2 × 1, 5.35 nm, is preserved. It has been deduced by the present studies that, owing to these preferential adsorption of CaF and facet-dependent growth of a CaF layer within a unit periodic length of Si(5 5 12)-2 × 1, such a self-limited growth of the CaF nanowire with a high aspect ratio becomes possible.     

Comparative PEEM and AES study of surface morphology and composition of Cu films on Si and 3C–SiC substrates

We have conducted photoemission electron microscope (PEEM) and Auger electron spectroscopy (AES) studies on the Cu(30 nm)/3C–SiC(1 0 0) and Cu(30 nm)/Si(1 0 0) samples annealed successively up to 850 °C. With PEEM, lateral diffusion of Cu atoms on the 3C–SiC substrate was observed at 400 °C while no lateral diffusion was seen for the Cu/Si(1 0 0) samples up to 850 °C. The 30 nm Cu thin film on 3C–SiC began to agglomerate at 550 °C, similar to the case for the Cu/Si(1 0 0) system. No further spread of the lateral diffusion region was found in subsequent annealing up to 850 °C for Cu/3C–SiC while separated regular-sized dot structures were found at 850 °C for Cu/Si(1 0 0). AES studies of Cu/Si(1 0 0) system showed partial interface reaction during Cu deposition onto the Si(1 0 0) substrate and oxidation of the resultant Cu₃Si to form SiO₂ on the specimen surface at room temperature in air. Surface segregation of Si and C was observed after annealing at 300 °C for Cu/Si(1 0 0) and at 850 °C for the Cu/3C–SiC system. We have successfully elucidated the observed phenomena by combining PEEM and AES considering diffusion of the constituent elements and/or reaction at interfaces.     

XPS investigation of vacuum annealed vertically aligned ultralong ZnO nanowires

The surface properties of vertically aligned ZnO nanowires grown by chemical vapour deposition on GaN using a gold layer as a catalyst are investigated by X-ray Photoelectron Spectroscopy as a function of annealing temperature in ultra high vacuum (UHV). The nanowires are 8.5 μm long and 60 nm wide. 87% of the surface carbon content was removed after annealing at 500 °C in UHV. Analysis of the gold intensity suggests diffusion into the nanowires after annealing at 600 °C. Annealing at 300 °C removes surface water contamination and induces a 0.2 eV upward band bending, indicating that adsorbed water molecules act as surface electron donors. The contaminants re-adsorbed after 10 days in UHV and the surface band bending caused by the water removal was reversed. The UHV experiment also affected the nanowires arrangement causing them to bunch together. These results have clear implications for gas sensing applications with ZnO NWs.     

Influence of the solvent on ultrasonically produced SbSI nanowires

The influence of the substitution of methanol in place of ethanol during the ultrasonic production of antimony sulfoiodide (SbSI) nanowires is presented. The new technology is faster and more efficient at temperatures greater than 314 K. The products were characterized by using techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDXA), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), optical diffuse reflection spectroscopy (DRS) and IR spectroscopy. The coexistence of Pna2₁ (ferroelectric) and Pnam (paraelectric) phases at 298 K was observed in the SbSI nanowires produced in methanol. The methanol decomposes during the sonication or due to the adsorption process on SbSI nanowires.     

Synthesis and photoluminescence properties of silver nanowires

Silver nanowires of 50–190 nm in diameters along with silver nanoparticles in the size range of 60–200 nm in prismatic and hexagonal shapes are synthesized through chemical process. The lengths of the silver nanowires lie between 40 and 1000 μm. The characterizations of the synthesized samples are done by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–visible absorption spectroscopy. The syntheses have been done by using two processes. In the first process, relatively thicker and longer silver nanowires are synthesized by a soft template liquid phase method at a reaction temperature of 70 °C with methanol as solvent. In the second process, thinner silver nanowires along with silver nanoparticles are prepared through a polymer mediated polyol process at a reaction temperature of 210 °C with ethylene glycol as solvent. The variations of photoluminescence (PL) emission from the silver nanocluster dispersed in methanol as well as in ethylene glycol are recorded at room temperature under excitation wavelengths lying in between 300 and 414 nm. The blue–green PL emission is observed from the prepared samples and these emissions are assigned to radiative recombination of Fermi level electrons and sp- or d-band holes.     

The influence of substrate temperature on growth of para-sexiphenyl thin films on Ir{111} supported graphene studied by LEEM

The growth of para-sexiphenyl (6P) thin films as a function of substrate temperature on Ir{111} supported graphene flakes has been studied in real-time with Low Energy Electron Microscopy (LEEM). Micro Low Energy Electron Diffraction (μLEED) has been used to determine the structure of the different 6P features formed on the surface. We observe the nucleation and growth of a wetting layer consisting of lying molecules in the initial stages of growth. Graphene defects – wrinkles – are found to be preferential sites for the nucleation of the wetting layer and of the 6P needles that grow on top of the wetting layer in the later stages of deposition. The molecular structure of the wetting layer and needles is found to be similar. As a result, only a limited number of growth directions are observed for the needles. In contrast, on the bare Ir{111} surface 6P molecules assume an upright orientation. The formation of ramified islands is observed on the bare Ir{111} surface at 320 K and 352 K, whereas at 405 K the formation of a continuous layer of upright standing molecules growing in a step flow like manner is observed.     

Band diagram for chemical vapor deposition diamond surface conductive layer: Presence of downward band bending due to shallow acceptors

The properties of surface conductivity (SC) of impurity-non-doped CVD diamond (001) samples were studied by various methods of sheet-resistance (R_S) measurement, Hall-effect measurement, XPS, UPS, SES, SR-PES, PEEM and 1D band simulation taking into account special emphases on deriving the information about the surface band diagram (SBD). The R_S values in UHV conditions were determined after no-annealing or 200 ～ 300 °C annealing in UHV. C 1 s XPS profiles were measured in detail in bulk-sensitive and surface-sensitive modes of photoelectron detection. The energy positions of valence band top (E_V) relative to the Fermi level (E_F) in UHV conditions after no-annealing or 200 ～ 300 °C annealing in UHV were determined. One of the samples was subjected to SR-PES, PEEM measurements. The SBDs were simulated by a band simulator from the determined R_S and E_V ? E_F values for three samples based on the two models of surface conductivity, namely, so-called surface transfer doping (STD) model and downward band bending with shallow acceptor (DBB/SA) model. For the DBB/SA model, there appeared downward bends of SBDs toward the surface at a depth range of ～ 1 nm. C 1 s XPS profiles were then simulated from the simulated SBDs. Comparison of simulated C 1 s XPS profiles to the experimental ones showed that DBB/SA model reproduces the C 1 s XPS profiles properly. PEEM observation of a sample can be explained by the SBD based on the DBB/SA model. Mechanism of SC of CVD diamonds is discussed on the basis of these findings. It is suggested that the STD model combined with SBD of DBB/SA model explains the surface conductivity change due to environmental changes in actual cases of CVD diamond SC with the presence of surface E_F controlling defects.     

Analysis of chemical property for Cu–Cr complex surface by laser irradiation with different wavelength and laser mode

Modification of the metal complexes by the laser irradiation with different wavelength and beam quality is investigated. After irradiation, the structure of macromolecular metal complexes are changed, and the reducing metal crystal nucleus emerges.. In this paper, the surface of the metal complexes is irradiated by laser scanning with wavelengths of 532 nm, 1064 nm and 10.6 μm.The 1064nm laser performs the most favorably by using Scanning Electron Microscope and X-ray Photoelectron Spectroscopy. Because the change of chemical composition percentage and variation of metal chemical valence state is most evident. Furthermore, mode selection of laser cavity by adding a pinhole aperture further improves the surface topography, fineness of modification and reducing ability. The appropriate wavelength and mode selection should be utilized together with other influencing laser parameters to achieve the most favorable consequence of metal complexes surface modification.     

Effect of temperature and injection current on characteristics of TO-CAN packaged Fabry–Perot laser diode

We fabricated and investigated the thermal characteristics of TO-CAN (transistor-outline-can) packaged long wavelength GaInAsP/InP Fabry–Perot laser diode. Characteristic temperature of 55 K and peak wavelength shift of 0.4 nm/°C depending on the temperatures were obtained. Furthermore, overheating of semiconductor laser originated from thermal resistance is analyzed and evaluated by measuring junction temperature. Results from experiment and estimation are compared at extreme operating conditions in which show agreement within 1 °C.     

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

Using the morphological differences of low and high index surfaces as templates for metal growth, several low dimensional overlayer structures with novel structural and electronic properties can be formed. We present here a first report on submonolayer adsorption and residual thermal desorption studies of In adatoms on reconstructed high index Si (5 5 12)?2 × 1 surface and compare it with the observations on planar Si (111)?7 × 7 surface. The study is done by using in-situ Ultra High Vacuum surface sensitive probes like Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). These conventional wide area techniques provide an understanding of atomistic issues involved in the evolution of the interface. We have observed an anomalous growth mode during adsorption at room temperature (RT) above 2ML, which includes adatom layering and clustering on Si (111) surface. This is also manifested during the desorption experiments on both surfaces, and the subtle differences on the two surfaces are discussed. The observation of LEED pattern during the adsorption process shows formation of different superstructural phases on Si (111)?7 × 7 surface. On Si (5 5 12) 2 × 1 surface we observe the sequential 2× (225), 2× (337) and 2× (113) facet formation during adsorption/desorption, which include quasi 1D-nanowire/chain structures. A combination of lattice strain effects, presence of step-edge barrier and quantum size effects are employed to speculate the differences in adsorption and desorption.     

Effect of electron beam on structural,linear and nonlinear properties of nanostructured Fluorine doped ZnO thin films

Electron beam induced effects on Fluorine doped ZnO thin films (FZO) grown by chemical spray pyrolysis deposition technique were studied. The samples were exposed to 8 MeV electron beam at different dose rate ranging from 1 kGy to 4 kGy. All films exhibit a polycrystalline nature which shows an increase in crystallanity with irradiation dosages. The electron beam irradiation effectively controls the films surface morphology and its linear optical characteristics. Z-Scan technique was employed to evaluate the sign and magnitude of nonlinear refractive index and nonlinear absorption coefficient using a continuous wave laser at 632.8 nm as light source. Enhancement in the third order nonlinear optical properties was were noted due to electron beam irradiation. Tailoring the physical and NLO properties by electron beam, the FZO thin films becomes a promising candidate for various optoelectronic applications such as phase change memory devices, optical pulse compression, optical switching and laser pulse narrowing.     

Preparation of SiC nanowires with fins by chemical vapor deposition

SiC nanowires with fins have been prepared by chemical vapor deposition in a vertical vacuum furnace by using a powder mixture of milled Si and SiO₂ and gaseous CH₄ as the raw materials. The products were characterized by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These investigations confirm that the nanowires with fins are cubic β-SiC. The diameter of the fins is about 100–120 nm and the diameter of the inner core stems is about 60–70 nm. The formation process of the β-SiC nanowires with fins is analyzed and discussed briefly.     

Experimental femtosecond laser photodisruption of rabbit sclera for minimally invasive laser sclerostomy: An in vitro study

Femtosecond laser technology, used as a minimally invasive tool in intrastromal refractive surgery, may also have potential as a useful instrument for glaucoma filtration surgery. The purpose of the present study was to evaluate the feasibility of minimally invasive laser sclerostomy by femtosecond laser photodisruption and seek the appropriate patterns of laser ablation and relevant laser parameters. A femtosecond laser (800 nm/50 fs/1 kHz), focused by a 0.1 numerical aperture (NA) objective lens, with different pulse energies and exposure times was applied to ablate hydrated rabbit sclera in vitro. The irradiated samples were examined by scanning electron microscopy (SEM). By moving a three-dimensional, computer-controlled translation stage to which the sample was attached, the femtosecond laser could produce three types of ablation patterns, including linear ablation, cylindrical aperture and rectangular cavity. With pulse energies ranging from 37.5 to 150 μJ, the linear lesions were consistently observed at the inner surface of sclera, whereas it failed to make any photodisruption if pulse energy was below the threshold value of 31.25 μJ, with the corresponding threshold intensity of 4.06×10¹⁴ W/cm². The depths of the linear lesions increased linearly with both pulse energy (37.5–150 μJ) and exposure time (0.1–0.4 s). Histological examination showed the incisions produced by femtosecond laser photodisruption had precise geometry and the edges were sharp and smooth, with no evidence of collateral damage to the surrounding tissue. Our results predict the potential application of femtosecond laser pulses in minimally invasive laser sclerostomy for glaucoma treatment.     

A brief history of PEEM

The evolution of cathode lens-based photo emission electron microscopy (PEEM) from the simple beginnings in the early 1930s to its sophisticated present state is discussed. In addition to conventional ultraviolet light-excited PEEM (UV-PEEM), laser excited PEEM and the various modes of synchrotron X-ray-excited PEEM (XPEEM) particular emphasis is placed on the complementary combination of these methods with low energy electron microscopy (LEEM).     

Oxidation of W(110) studied by LEED and STM

The oxidation of W(110) was studied over a temperature a range of 1000 K to 1600 K at 1 × 10^? 6 Torr oxygen. The subsequent oxide structure was then characterized using Low Energy Electron Diffraction (LEED) and Scanning Tunneling Microscopy (STM). It was found that the resulting structure was remarkably similar to that of Mo(110) oxidized under similar conditions. Using the Mo(110) oxide structure as our basis, along with atomic resolution STM images, we have constructed a model for the surface oxide of W(110).