Technology of the deposition of composite coatings based on Ti–Al intermetallic compounds by vacuum-arc plasma discharge

A technique for the deposition of composite coatings based on Ti–Al intermetallic compounds by vacuum-arc plasma discharge is developed. X-ray diffraction data on the obtained coatings are reported. The effect of deposition modes on the intermetallic-compound contents in the coatings is established.     

Substrate and pretreatment dependence of Cu nucleation by metal–organic chemical vapor deposition

The nucleation of copper (Cu) with (hfac)Cu(VTMS) organometallic precursor is investigated for Si, SiO₂, TiN, and W₂N substrates. As the deposition temperature is increased, the dominant growth mechanism is observed to change from the nucleation of Cu particles to the clustering of Cu nuclei around 180 °C independent of the employed substrates. It is also observed that the cleaning of substrate surfaces with the diluted HF solution improves the selectivity of Cu nucleation between TiN and SiO₂ substrates. Dimethyldichlorosilane treatment is found to passivate the surface of TiN substrate, contrary to the generally accepted belief, when the TiN substrate is cleaned by H₂O₂ solution before the treatment.     

TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

The use of SiO₂/4H–SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) can be problematic due to high interface state density (D_it) and low field-effect mobility (μ_fe). Here, we present a tetra-ethyl-ortho-silicate (TEOS)-based low-pressure chemical vapor deposition (LPCVD) method for fabricating the gate oxide of 4H–SiC MOSFETs using nitric oxide post-deposition annealing. SiO₂/4H–SiC MOS capacitors and MOSFETs were fabricated using conventional wet and TEOS oxides. The measured effective oxide charge density (Q_eff) and D_it of the TEOS-based LPCVD SiO₂/4H–SiC MOS capacitor with nitridation were 4.27 × 10¹¹ cm⁻² and 2.99 × 10¹¹ cm⁻²eV⁻¹, respectively. We propose that the oxide breakdown field and barrier height were dependent on the effective Q_eff. The measured μ_fe values of the SiO₂/4H–SiC MOSFETs with wet and TEOS oxides after nitridation were, respectively, 11.0 and 17.8 cm²/V due to the stable nitrided interface between SiO₂ and 4H–SiC. The proposed gate stack is suitable for 4H–SiC power MOSFETs.     

Heteroepitaxial growth of InP/GaAs(100) by metalorganic chemical vapor deposition

Using two-step method InP epilayers were grown on GaAs(100)substrates by low-pressure metalorganic chemical vapor deposition(LP-MOCVD).X-ray diffraction(XRD)and room-temperature(RT)photolu- minescence(PL)were employed to characterize the quality of InP epilayer.The best scheme of growing InP/GaAs(100)heterostructures was obtained by optimizing the initial low-temperature(LT)InP growth conditions,investigating the effects of thermal cycle annealing(TCA)and strained layer superlattice(SLS) on InP epilayers.Compared with annealing,10-periods Ga_(0.1)In_(0.9)P/InP SLS inserted into InP epilayers can improve the quality of epilayers dramatically,by this means,for 2.6-μm-thick heteroepitaxial InP,the full-widths at half-maximum(FWHMs)of XRDωandω-2θscans are 219 and 203 arcsec,respectively,the RT PL spectrum shows the band edge transition of InP,the FWHM is 42 meV.In addition,the successful growth of InP/In_(0.53)Ga_(0.47)As MQWs on GaAs(100)substrates indicates the quality of device demand of InP/GaAs heterostructures.     

Significance of stacking fault energy on microstructural evolution in Cu and Cu–Al alloys processed by high-pressure torsion

Disks of pure Cu and several Cu–Al alloys were processed by high-pressure torsion (HPT) at room temperature through different numbers of turns to systematically investigate the influence of the stacking fault energy (SFE) on the evolution of microstructural homogeneity. The results show there is initially an inhomogeneous microhardness distribution but this inhomogneity decreases with increasing numbers of turns and the saturation microhardness increases with increasing Al concentration. Uniform microstructures are more readily achieved in materials with high or low SFE than in materials with medium SFE, because there are different mechanisms governing the microstructural evolution. Specifically, recovery processes are dominant in high or medium SFE materials, whereas twin fragmentation is dominant in materials having low SFE. The limiting minimum grain size (d _min) of metals processed by HPT decreases with decreasing SFE and there is additional evidence suggesting that the dependence of d _min on the SFE decreases when the severity of the external loading conditions is increased.     

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

We have investigated the electron affinity of Si-doped AlN films(N_(Si)= 1.0 × 10~(18)–1.0 × 10_(19)cm~(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition(MOCVD) under low pressure on the ntype(001)6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy(UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy(XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.     

Mechanical spectroscopy of decagonal Al–Cu–Fe–Cr quasicrystalline coatings

Mechanical spectroscopy measurements were performed on decagonal quasicrystalline Al–Cu–Fe–Cr coatings of three different thicknesses deposited on a mild steel substrate. The mechanical loss spectra indicate that the internal friction is mostly caused by the quasicrystalline coating and that the contributions of both the steel substrate and the interface are small. The shear modulus measured in torsion increases with temperature, while the Young’s modulus measured in flexion behaves normally. This shear modulus anomaly is interpreted as being due to solid friction between cracked segments of the quasicrystalline coating. This phenomenon also explains the broad athermal maximum found to occur in isochronal internal friction measurements. A quantitative model successfully reproducing the observed behaviour has been developed. Finally, the reversible high-temperature exponential background was interpreted as being due to the onset of the brittle-to-ductile transition in the quasicrystalline coating. The measured activation enthalpy is similar to the value that was deduced from compression tests performed at high temperatures on icosahedral Al–Cu–Fe bulk material.     

Cu2ZnSnSe4 films by selenization of Sn–Zn–Cu sequential films

This paper deals with the formation of Cu₂ZnSnSe₄ (CZTS) in the process of selenization of metal precursor layers in elemental selenium vapour. Metallic precursors were sequentially evaported from Sn, Zn and Cu sources. Precursor Sn–Zn–Cu films have a “mesa-like” structure and consist mainly of Cu₅Zn₈ and Cu₆Sn₅ phases. It was confirmed that the formation of different binary copper selenides is the dominating process of selenization in elemental Se vapour at temperatures up to 300 °C. The formation of kesterite CZTS films begins at 300 °C and dominates at higher temperatures, always resulting in multiphase films that consist of high-quality Cu₂ZnSnSe₄ crystals and of a separate phase of ZnSe.     

Mechanical properties of ferrite-perlite and martensitic Fe–Mn–V–Ti–C steel processed by equal-channel angular pressing and high-temeperature annealing

Using the method of equal-channel angular pressing (ECAP), submicrocrystalline structure is formed in lowcarbon Fe–Mn–V–Ti–C steel with the average grain size 260 nm in the ferrite-perlite state and 310 nm in the martensitic state. It is established that the ECAP treatment gives rise to improved mechanical properties (H_μ = 2.9 GPa, σ₀ = 990 MPa in the ferrite-perlite and H_μ = 3.7 GPa, σ₀ = 1125 MPa in martensitic states), decreased plasticity, and results in plastic flow localization under tensile loading. The high strength properties formed by the ECAP are shown to sustain up to the annealing temperature 500°C.     

Segregation in In x Ga1− x As/GaAs Stranski–Krastanow layers grown by metal–organic chemical vapour deposition

Using quantitative high-resolution transmission electron microscopy we studied the chemical morphology of wetting layers in In _x Ga_{1? x} As/GaAs quantum dot structures which were optimized for applications to optical devices operating around 1.3?µm. The samples are grown by low-pressure metal–organic chemical vapour deposition on GaAs substrates. The In concentration profiles of the wetting layers are evaluated with the composition evaluation by lattice fringe analysis method. The profiles reveal a clear signature of segregation. A fit of the profiles with the Muraki et al. model for segregation reveals a segregation efficiency R?=?0.65?±?0.05 at the growth temperature of 550°C, which is significantly lower than segregation efficiencies observed in samples grown by molecular beam epitaxy at similar temperatures.     

Effect of InxGal-xN ＂continuously graded＂ buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

In this paper we report on the effect of an lnxGal xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations.     

Influence of post-deposition annealing on the structural and optical properties of ZnO thin films prepared by sol–gel and spin-coating method

Thin films of zinc oxide have been deposited onto (0001) sapphire substrate by sol–gel and spin-coating methods. The XRD pattern showed that the crystallinity of the annealed ZnO films had improved in comparison with that of the as-grown films. Photoluminescence spectra revealed a two-line structure, which is identified in terms of UV emission and defect-related emission. The emission intensity was found to be greatly dependent on heat treatment. Host phonons of ZnO and a shift of the _E2$E_2$ (high) peak from its position have been observed from Raman spectra. The surface morphologies of the film had been improved after annealing was observed from AFM images.     

Effects of annealing temperature on GO–Cu2O composite films grown by electrochemical deposition for PEC photoelectrode

In this work, graphene oxide–cuprous oxide (GO–Cu₂O) composite films were grown on fluorine-doped tin oxide substrates by electrochemical deposition. We investigated the effects of the annealing temperature on the morphological, structural, optical and photoelectrochemical (PEC) properties of GO–Cu₂O composite films. As a result, our work shows that while GO–Cu₂O composite films exhibit the highest XRD (111) peak intensity at 300 °C sample, the highest photocurrent density value obtained was −4.75 mA/cm² at 200 °C sample (using 0.17 V versus a reversible hydrogen electrode (RHE)). In addition, a reduction reaction at 300 °C sample was observed using XPS analysis from the shift in the O1s peak in addition to a weaker O1s peak intensity.     

Dissolution patterns caused by chemical etching of Al–Co–Cu and Al–Co–Ni decagonal quasicrystals with a HF–HNO3–H2O solution

Dissolution patterns essential for Al–Co–Cu and Al–Co–Ni decagonal quasicrystals (d-QCs) have been investigated in detail by chemical etching using a HF–HNO₃–H₂O solution followed by scanning electron microscopy (SEM) observations. The chemical etching of definite surface areas of the samples, which are either normal or parallel to the tenfold axes, using a solution with HF–HNO₃–H₂O (1?:?5?:?4 in volume ratio; 0°C; 5–10?min), produces a large number of microfacet pits of decagonal prismatic shape. In addition, the same etching test in combination with SEM observations was carried out on a deformed sample of the Al–Co–Ni d-QC, which had been subjected to concentrated mechanical stress at an elevated temperature of 850°C by means of the Vickers indentation technique. The morphological features of the resulting micropits and their possible origins are discussed on the basis of results obtained by SEM observations.     

Constant chemical potential,pressure and temperature profiles in liquid–vapour equilibrium obtained by spinodal decomposition

Constant chemical potential, pressure and temperature profiles across a slab of liquid in equilibrium with its vapour confirm that, the spinodal decomposition procedure carried on the NVT ensemble simulated via molecular dynamics produce an equilibrium system. An initial homogeneous crystalline configuration of fluid is kept in a cell with a parallelepiped shape at a density near the critical density and a temperature between the triple and critical temperatures, form a slab of liquid in equilibrium with its vapour by the spinodal decomposition phenomenon if the simulation is performed in the NVT ensemble. An elongated box favours the formation of two planar parallel surfaces along the largest side of the box. We show in this paper that the ‘three conditions’ for thermodynamic equilibrium: constant temperature, constant pressure and constant chemical potential are met for such a system.     

Effect of annealing temperature on the microstructure and optical–electrical properties of Cu–Al–O thin films

We have successfully prepared Cu–Al–O thin films on silicon (100) and quartz substrates by radio frequency (RF) magnetron sputtering method. The as-deposited Cu–Al–O film is amorphous in nature and post-annealing treatment in argon ambience results in crystallization of the films and the formation of CuAlO₂. The annealing temperature plays an important role in the surface morphology, phase constitution and preferred growth orientation of CuAlO₂ phase, thus affecting the properties of the film. The film annealed at 900 °C is mainly composed of CuAlO₂ phase and shows smooth surface morphology with well-defined grain boundaries, thus exhibiting the optimum optical–electrical properties with electrical resistivity being 79.7 Ω·cm at room temperature and optical transmittance being 80% in visible region. The direct optical band gaps of the films are found in the range of 3.3–3.8 eV depending on the annealing temperature.     

Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal–organic chemical vapor deposition

Metal-organic chemical vapor deposition （MOCVD） grown ferromagnetic GaMnN films are investigated by photo- luminescence （PL） measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% （[Mn]A =0.75%） but its PL intensity is stronger than other samples＇. The 1.8-eV PL peak is attributed to the recombination of electrons in the t2 state of the neutral Mn3＋ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.     

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.     

Fabrication and characteristics of ta-C biomaterial coatings on Ti–6Al–4V using metal plasma immersion ion implantation and deposition

We have formed amorphous diamond (ta-C) coatings on Ti–6Al–4V substrates using a metal plasma immersion ion implantation and deposition (MEPIIID) technique, and characterized the mechanical properties and biological compatibility of the coating material. The hemocompatibility of the coating compared favorably with that of low temperature isotropic (LTI) carbon, with kinetic clotting time and hemolysis rate approximately the same as for LTI carbon, and platelet consumption about twice that of the latter. The mechanical properties were good, with a microhardness greater than that of the uncoated metal substrates, and high adhesion of >0.75 GPa (interface shear stress) as estimated from a thermal quench method. Glancing-angle X-ray diffraction measurements indicated the presence of a TiC transition layer, suggesting the formation of a Ti/TiC/ta-C multilayer structure, leading in turn to good film–substrate adhesion. We conclude that this kind of amorphous diamond coating could provide benefit as a biocompatible hard coating for Ti–6Al–4V substrate material.