共查询到18条相似文献,搜索用时 109 毫秒
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利用强度标定的发射光谱法,研究了感应耦合CF44/CH44等离 子体中空间基团的 相对密度随宏观条件(射频输入功率、气压和流量比)的变化情况. 研究表明:在所研究的 碳氟/碳氢混合气体放电等离子体中除了具有丰富的CF,CF22,CH,H和F等活 性基团外 ,还同时存在着C22基团,其相对密度随着放电功率的提高而增加;随着气压 的上升呈 现倒“U”型的变化. C22随流量比R(R=[CH4
关键词:
发射光谱
感应耦合等离子体
2基团')" href="#">C22基团 相似文献
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利用强度标定的发射光谱法,研究了感应耦合CF4/CH4等离子体中空间基团的相对密度随宏观条件(射频输入功率、气压和流量比)的变化情况.研究表明:在所研究的碳氟/碳氢混合气体放电等离子体中除了具有丰富的CF,CF2,CH,H和F等活性基团外,还同时存在着C2基团,其相对密度随着放电功率的提高而增加;随着气压的上升呈现倒"U"型的变化.C2随流量比R(R=[CH4]/{[CH4]+[CF4]})的变化不是单调的,其相对密度在R=7.5%时存在一个极大值,并随着R进一步增加而减弱,然后趋于一个稳定值.根据各基团相对密度的变化规律,认为等离子体中CF和CH基团的气相反应(CF+CH→C2+HF)是C2基团产生的主要途径,并提出了形成C2的基团碰撞的活化反应模型,据此进行的模拟计算的结果与实验相符. 相似文献
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用密度泛函理论和非谐振子模型计算了晶体HgGa2S4和Hg0.5Cd0.5Ga2S4的能带结构、态密度、化学成键及线性、非线性光学性质。结果表明:HgGa2S4的价带顶部主要是Ga-S成键态的贡献,导带底部主要是Ga-S反键态的贡献; Hg0.5Cd0.5Ga2S4的价带顶部主要由S-3p轨道组成,导带底部主要是Ga-S反键态的贡献。布居分析表明Ga-S键主要是共价成分,而Hg-S和Cd-S键主要是离子成分。HgGa2S4的折射率计算值与实验值在低能量区很好吻合。另外,HgGa2S4的能隙计算值比Hg0.5Cd0.5Ga2S4小,而二阶非线性极化率比Hg0.5Cd0.5Ga2S4大。 相似文献
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运用金刚石压砧同步辐射X射线衍射,对尖晶石结构的LiAl5O8进行了高压原位研究。实验发现:在高压下,一组LiAl5O8的新相衍射峰出现,随着压力的增加,其新相衍射峰逐渐增强,当压力增加到45.0 GPa时,LiAl5O8的低压相衍射峰全部消失,而形成了一组高压新相衍射峰。采用指标化程序对衍射数据进行处理和分析,确定这一高压新相为正交晶系结构,其晶胞参数为a=0.995 9 nm,b=0.644 7 nm,c=0.333 4 nm ,空间群为Pmm2。 相似文献
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研究了用于SiCOH 低介电常数薄膜刻蚀的CHF3气体在1356 MHz/2 MHz,2712 MHz/2 MHz和60 MHz/2 MHz双频电容耦合放电时的等离子体性质.发现2 MHz低频源功率的增大主要导致F基团密度的增大;而高频频率从1356,2712增大到60 MHz,导致CF2基团的密度增大和电极之间F基团密度的轴向空间不均匀性增加.根据电子温度的分布规律及离子能量随高频源频率的变化关系,提出CF2基团的产生主要通过电子-中性气体碰撞,而F基团的产生是离子-中性气体碰撞的结果. 相似文献
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E.A. Drage K.M. Smith E. Vasekova N.J. Mason 《Journal of Quantitative Spectroscopy & Radiative Transfer》2006,98(1):44-56
High-resolution (0.03 cm−1) absolute infrared photoabsorption cross sections of bromotrifluoromethane (CF3Br) and tetrafluoroethylene (C2F4) have been measured using Fourier-transformed infrared (FTIR) spectroscopy at temperatures between 213 and 296 K. The measured cross sections were subsequently used to estimate the radiative forcings and the global warming potentials of these two species. 相似文献
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对高气压(约100 Torr) 直流辉光碳氢等离子体的气相过程进行了光谱和质谱原位诊断. 在高气压下, 等离子体不同区域光发射特性存在明显差异. 正柱区存在着以C2和CH为主的多个带状谱和分立谱线, 阳极区粒子发射谱线明显减少, 而在阴极区则出现大量复杂的光谱成分, 表明高气压情形下等离子体与阴极间强烈的相互作用将导致复杂的原子分子过程. 从低气压到高气压演变过程中, 电子激发温度降低而气体分子转动温度升高. 在高气压下, 高甲烷浓度导致C2, C2H2及C2H4增多而C2H6减少. 表明在高气压条件下, 气体温度对气相过程的影响作用显著增强.
关键词:
高气压直流等离子体
光发射谱
质谱 相似文献
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Q. Zou 《Journal of Quantitative Spectroscopy & Radiative Transfer》2004,83(2):215-221
Spectral absorption cross-sections, kν (), have been measured in the 8.0 and bands of C2F6. Temperature and total (N2-broadening) pressure have been varied to represent the conditions specified in various models of the terrestrial atmosphere so that the absorption cross-sections can be applied directly to the optical remote-sensing of C2F6 in the atmosphere. The measured absolute intensities of the 8.0 and the bands are (1.636±0.003)×10−16 and (, respectively. 相似文献
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分别通过Langmuir探针测量和动力学模型模拟方法研究了射频感应耦合Ar-N2等离子体中电子能量分布、电子温度、电子密度等物理量随N2含量的变化规律.实验研究结果表明:电子能量分布呈现出非Maxwell型分布,并由双温分布向三温分布过渡;电子温度在不同的气压下随N2含量的增加呈现出不同的变化规律.在放电气压小于1.3 Pa时,电子温度随N2含量的增加而下降;当气压大于1.3 Pa时,电子温度随N2关键词:
感应耦合等离子体
2混合气体放电')" href="#">Ar-N2混合气体放电
电子能量分布
Langmuir探针 相似文献
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ICP power/RF power, operating pressure, and Cl2/BCl3 gas mixing ratio are altered to investigate the effect of input process parameters on the etch characteristics of GaN films. The etch selectivity of GaN over SiO2 and photoresist is studied. Although higher ICP/RF power can obtain higher GaN/photoresist etch selectivity, it can result in faceting of sidewall and weird sidewall profile due to photoresist mask erosion. Etch rates of GaN and SiO2 decrease with the increase of operating pressure, and etch selectivity of GaN over SiO2 increases with the increasing operating pressure at fixed ICP/RF power and mixture component. The highest etch selectivity of GaN over SiO2 is 7.92, and an almost vertical etch profile having an etch rate of GaN close to 845.3 nm/min can be achieved. The surface morphology and root-mean-square roughness of the etched GaN under different etching conditions are evaluated by atomic force microscopy. The plasma-induced damage of GaN is analyzed using photoluminescence (PL) measurements. The optimized etching process, used for mesa formation during the LED fabrication, is presented. The periodic pattern can be transferred into GaN using a combination of Cl2/BCl3 plasma chemistry and hard mask SiO2. Patterning of the sapphire substrate for fabricating LED with improved extraction efficiency is also possible using the same plasma chemistry. 相似文献
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We report on the first observation of the well-resolved hyperfine structure in optical spectra of the KY3F10:Ho3+ single crystals. Some interesting peculiarities of this structure and the origin of the observed forbidden transitions are discussed. 相似文献
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The stability, frontier orbitals, bond character, and static linear polarizability of the fluorinated fullerene H20@C80F60 下载免费PDF全文
This paper uses the density functional theory under generalised gradient approximation to analyse the stability,frontier orbitals,bond character,and static linear polarizability of H20@C80F60,which has not been isolated,as well as those of the synthesised H 20 @C 80 H 60.The H20@C80F60 should be considerably stable by analysing its energy and aromaticity.The inside H and outside X will play different role in the chemical reaction involving H 20 @C 80 X 60(X=H and F).The covalence of C-H bond is in the order that the inside C-H bond of H20@C80F60 > the inside C-H bond of H 20 @C 80 H 60 > the outside C-H bond of H 20 @C 80 H 60,whereas the C-F bond of H20@C80F60 have both the covalent and ionic characters.The static linear polarizabilities of C 80 and H 20 @C 80 X 60(X=H and F) are all isotropic. 相似文献