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1.
游达  许金通  汤英文  何政  徐运华  龚海梅 《物理学报》2006,55(12):6600-6605
对Ga面p型GaN/Al0.35Ga0.65N/GaN应变异质结构中形成的二维空穴气(2DHG)进行了研究.首先基于半导体-绝缘体-半导体异质结构模型确定了应变异质中的临界厚度,然后自洽求解薛定谔方程和泊松方程,计算了当中间势垒层AlGaN处于完全应变状态和半应变状态两种条件下,顶层GaN及中间层AlGaN厚度的变化对2DHG分布的影响.计算结果表明,势垒层AlGaN和顶层GaN的应变状态和厚度对极化引起的2DHG面密度及分布有重要影响.在此基础上制备了p型GaN/Al0.35Ga0.65N/GaN应变量子阱结构肖特基器件,并通过器件的C-V测试证实了异质结处2DHG的存在.器件响应光谱的测试结果表明,由于p型GaN/Al0.35Ga0.65N/GaN量子阱中强烈的极化作用和Stark效应使得器件零偏压和反向偏压时的响应光谱都向短波方向移动了10 nm,在零偏压下器件在280 nm处的峰值响应为0.022 A/W,在反向偏压为1 V时,峰值响应达到0.19 A/W,已经接近理论值. 关键词: AlGaN 二维空穴气 极化效应  相似文献   

2.
通过用数值计算方法自洽求解薛定谔方程和泊松方程,研究了Al组分对AlxGa1-xN/GaN异质结构二维电子气性质的影响,给出了AlxGa1-x< /sub>N/GaN异质结构二维电子气分布和面密度,导带能带偏移以及子带中电子分布随AlxGa 1-xN势垒层中Al组分的变化关系,并用AlxGa1-xN/GaN 异质结构自发极化与压电极化机理和能 关键词: xGa1-xN/GaN异质结构')" href="#">AlxGa1-xN/GaN异质结构 二维电子气 自发极化 压电极化  相似文献   

3.
杨鹏  吕燕伍  王鑫波 《物理学报》2015,64(19):197303-197303
本文研究AlN作为AlxGa1-xN/GaN插入层引起的电子输运性质的变化, 考虑了AlxGa1-xN和AlN势垒层的自发极化、压电极化对AlxGa1-xN/AlN/GaN双异质结高电子迁移率晶体管(HEMT)中极化电荷面密度、二维电子气(2DEG) 浓度的影响, 分析了AlN厚度与界面粗糙度散射和合金无序散射的关系; 结果表明, 2DEG 浓度、界面粗糙度散射和合金无序散射依赖于AlN层厚度, 插入一层1–3 nm薄的AlN层, 可以明显提高电子迁移率.  相似文献   

4.
研究发展了用肖特基电容电压特性数值模拟确定调制掺杂AlxGa1-xN/GaN异质结中极化电荷的方法.在调制掺杂的Al0.22Ga0.78N/GaN异质结上制备了Pt肖特基接触,并对其进行了C-V测量.采用三维费米模型对调制掺杂的Al0.22Ga0.78N/GaN异质结上肖特基接触的C-V特性进行了数值模拟,分析了改变样品参数对C-V特性的影响.利用改变极化电荷、n-AlGaN 关键词: xGa1-xN/GaN异质结')" href="#">AlxGa1-xN/GaN异质结 极化电荷 电容电压特性 数值模拟  相似文献   

5.
室温300K下,由于AlxGa1-xN的带隙宽度可以从GaN的3.42eV到AlN的6.2eV之间变化,所以AlxGa1-xN是紫外光探测器和深紫外LED所必需的外延材料.高质量高铝组分AlxGa1-xN材料生长的一大困难就是AlxGa1-xN与常用的蓝宝石衬底之间大的晶格失配和热失配.因而采用MOCVD在GaN/蓝宝石上生长的AlxGa1-xN薄膜由于受张应力作用非常容易发生龟裂.GaN/AlxGa1-xN超晶格插入层技术是释放应力和减少AlxGa1-xN薄膜中缺陷的有效方法.研究了GaN/AlxGa1-xN超晶格插入层对GaN/蓝宝石上AlxGa1-xN外延薄膜应变状态和缺陷密度的影响.通过拉曼散射探测声子频率从而得到材料中的残余应力是一种简便常用的方法,AlxGa1-xN外延薄膜的应变状态可通过拉曼光谱测量得到.AlxGa1-xN外延薄膜的缺陷密度通过测量X射线衍射得到.对于具有相同阱垒厚度的超晶格,例如4nm/4nm,5nm/5nm,8nm/8nm的GaN/Al0.3Ga0.7N超晶格,研究发现随着超晶格周期厚度的增加AlxGa1-xN外延薄膜缺陷密度降低,AlxGa1-xN外延薄膜处于张应变状态,且5nm/5nmGaN/Al0.3Ga0.7N超晶格插入层AlxGa1-xN外延薄膜的张应变最小.在保持5nm阱宽不变的情况下,将垒宽增大到8nm,即十个周期的5nm/8nmGaN/Al0.3Ga0.7N超晶格插入层使AlxGa1-xN外延层应变状态由张应变变为压应变.由X射线衍射结果计算了AlxGa1-xN外延薄膜的刃型位错和螺型位错密度,结果表明超晶格插入层对螺型位错和刃型位错都有一定的抑制效果.透射电镜图像表明超晶格插入层使位错发生合并、转向或是使位错终止,且5nm/8nmGaN/Al0.3Ga0.7N超晶格插入层导致AlxGa1-xN外延薄膜中的刃型位错倾斜30°左右,释放一部分压应变.  相似文献   

6.
研究了高In组分InxGa1-xN/GaN(x≈30%)多量子阱(MQWs)结构 发光二极管样品在不同注入电流下的电致荧光(EL)谱及反常的双峰现象.结果表明:有源区 内建电场在外界电流注入条件下逐渐受屏蔽,这一效应在高In组分InxGa1 -xN/GaN MQWs材料的发光复合机理中占有重要地位. 关键词: xGa1-xN/GaN多量子阱')" href="#">InxGa1-xN/GaN多量子阱 电致荧光谱 内建电场  相似文献   

7.
压力下应变异质结中施主杂质态的Stark效应   总被引:2,自引:0,他引:2       下载免费PDF全文
张敏  班士良 《物理学报》2008,57(7):4459-4465
对应变GaN/AlxGa1-xN异质结系统,考虑理想界面突变势垒,引入简化相干势近似,采用变分法讨论了流体静压力下外界电场对束缚于界面附近的浅杂质态结合能的影响.对GaN为衬底的闪锌矿应变异质结,分别计算了(001)和(111)取向时杂质态的结合能随压力、杂质位置、电场强度以及组分的变化关系.结果表明,杂质态结合能随流体静压力呈近线性变化.电场对杂质态的Stark效应则随杂质位置不同而呈现谱线蓝、红移动.此外,还讨论了在不同压力情况下,Al组分对杂质结合能的影响.当杂质处于GaN材料中且距界面较远时,Al组分的增加使电子的二维特性增强,从而使结合能增大,且压力加剧增幅的增加;当杂质处于AlxGa1-xN材料中,Al组分的增加削弱了杂质与电子间的库仑相互作用,故而结合能降低. 关键词xGa1-xN异质结')" href="#">GaN/AlxGa1-xN异质结 杂质态 压力 Stark效应  相似文献   

8.
周济 《发光学报》1989,10(2):130-139
本文讨论了GaAs/AlGaAs异质结界面的H线发光及其性能。用双晶X射线衍射及皮秒光致发光证明了H线与界面质量密切相关,并且有相似于激子跃迁的寿命行为。用限制于异质结界面势阱的二维电子(或空穴)与分布于GaAs边的三维空穴(或电子)组成的二维激子效应,解释了H线的实验结果。并讨论了不同外延生长的异质结与界面有关的发光行为。  相似文献   

9.
吴孔平  齐剑  彭波  汤琨  叶建东  朱顺明  顾书林 《物理学报》2015,64(18):187304-187304
在纤锌矿结构Zn1-xMgxO/ZnO异质结构中发现了高迁移率的二维电子气(2DEG), 2DEG 的产生很可能是由于界面上存在不连续极化, 而且2DEG通常也被认为是由极化电荷产生的结果. 为了探索2DEG的形成机理及其产生的根源, 研究Zn1-xMgxO合金的极化特性与ZnO/Zn1-xMgxO超晶格的能带排列是非常必要的. 基于第一性原理广义梯度近似+U方法研究了Zn1-xMgxO合金的自发极化随Mg组分x的变化关系, 其中极化特性的计算采用Berry-phase方法. 由于ZnO与Zn1-xMgxO 面内晶格参数大小相当, ZnO 与Zn1-xMgxO 的界面匹配度优良, 所以ZnO/Zn1-xMgxO 超晶格模型较容易建立. 计算了Mg0.25Zn0.75O/ZnO超晶格静电势的面内平均及其沿着Z(0001)方向上的宏观平均. (5+3)Mg0.25Zn0.75O/ZnO超晶格拥有较大的尺寸, 确保远离界面的Mg0.25Zn0.75O与ZnO区域与块体计算情况一致. 除此之外, 基于宏观平均为能量参考, 计算得到Mg0.25Zn0.75O/ZnO超晶格界面处价带偏差为0.26 eV, 并且导带偏差与价带偏差的比值处于合理区间, 这与近来实验上报道的结果相符. 除了ZnO在[0001]方向上产生自发极化外, 由于在ZnO中引入Mg杂质会产生应变应力, 导致MgxZn1-xO层产生额外的极化值. 这样必然会在Mg0.25Zn0.75O/Zn界面处产生非连续极化现象, 促使单极性电荷在界面处积累, 从而在Mg0.25Zn0.75O/Zn超晶格中产生内在电场. 此外, 计算了Mg0.25Zn0.75O/ZnO超晶格的能带排列, 由于价带偏差Δ EV=0.26 eV与导带偏差ΔEC=0.33 eV, 表明能带遵循I型排列. Mg0.25Zn0.75O/ZnO 的这种能带排列方式足以让电子与空穴在势阱中产生禁闭作用. 2DEG在电子学与光电子学领域都有重要应用, 本文的研究结果将对Mg0.25Zn0.75O/ZnO 界面2DEG的设计与优化中起到重要作用, 并且可以作为研究其他Mg组分的MgxZn1-xO/ZnO超晶格界面电子气特性的参考依据.  相似文献   

10.
p型GaN/Al0.35Ga0.65N/GaN应变量子阱中二维空穴气的研究   总被引:1,自引:0,他引:1       下载免费PDF全文
对Ga面p型GaN/Al0.35Ga0.65N/GaN应变异质结构中形成的二维空穴气(2DHG)进行了研究.首先基于半导体-绝缘体-半导体异质结构模型确定了应变异质中的临界厚度,然后自洽求解薛定谔方程和泊松方程,计算了当中间势垒层AlGaN处于完全应变状态和半应变状态两种条件下,顶层GaN及中间层AlGaN厚度的变化对2DHG分布的影响.计算结果表明,势垒层AlGaN和顶层GaN的应变状态和厚度对极化引起的2DHG面密度及分布有重要影响.在此基础上制备了p型GaN/Al0.35 Ga0.65N/GaN应变量子阱结构肖特基器件,并通过器件的C-V测试证实了异质结处2DHG的存在.器件响应光谱的测试结果表明,由于p型GaN/Al0.35Ga0.65N/GaN量子阱中强烈的极化作用和Stark效应使得器件零偏压和反向偏压时的响应光谱都向短波方向移动了10 nm,在零偏压下器件在280 nm处的峰值响应为0.022 A/W,在反向偏压为1 V时,峰值响应达到0.19 A/W,已经接近理论值.  相似文献   

11.
Two-dimensional scanning of a 0.6328 mum guided-light beam has been realized using noncolinear acousto-optic (AO) coplanar Bragg diffraction together with colinear AO guided-mode to substrate radiation-mode conversion in a Z-cut Xpropagation LiNbO3 proton-exchanged (PE) waveguide. The two surface acoustic (SAW) waves utilized are at the center frequencies of 500 and 200 MHz, propagating in the Y and X axes, respectively. Two-dimensional scanning of approximately 720 resolvable light beam spots, namely, 18 40 (horizontal vertical) scanning, has been demonstrated using a light beam of 1.0 mm aperture. The total number of resolvable beam spots can be greatly increased from 720 by simply utilizing SAW transducers of larger bandwidth and a light beam of greater aperture. It should also be possible to significantly increase the diffraction efficiency from 3 % by optimizing the parameters of the PE waveguide and the SAWs.  相似文献   

12.
Results of a study of the effect of γ-radiation on the spectral luminescence properties of cadmium tungstate crystals doped with silver, bismuth, and molybdenum cations are presented. Spectral characteristics of the nondnnnoped crystals are briefly described. Absorption and photo and X-ray luminescence spectra of the crystals taken before and after exposure to γ-radiation (5.5·104 Gy) are compared. It is found that the spectral characteristics of the crystals doped with silver, bismuth, and molybdenum cations do not change markedly after the exposure. The relation between the type of impurity-induced defects, individual characteristics of the impurity cations, and the character of the effect of γ-radiation on the spectral luminescence properties of impure crystals is analyzed (preliminarily). Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 55–60, January–February, 1997.  相似文献   

13.
A simple technique of pulse compression, based on the linear chirp compensation of self-phase modulation (SPM) spectra in dispersion shifted fibers, is demonstrated. The optimization procedure is carried out, for a short span of a single-mode fiber, using a parabolic law, which describes the behavior of the squared output pulse width versus the pump peak power in the case of Gaussian pulses. The experimental results give a minimum pulse duration of 233 fs, which is in good agreement with the model. Shorter and coherent pulses, down to 90 fs, have been obtained by inserting an interference filter at the optical output.  相似文献   

14.
The Shanghai Synchrotron Radiation Facility(SSRF)booster ring,a full energy injector for the storage ring,is deigned to accelerate the electron beam energy from 150MeV to 3.5GeV that demands high extraction efficiency at the extraction energy with low beam loss rate when electrons are ramping.Closed orbit distortion(COD)caused by bending magnet field uniformity errors which affects the machine performance harmfully could be effectively reduced by bending magnet location sorting.Considering the affections of random errors in measurement,both ideal sorting and realistic sorting are studied based on measured bending magnet field uniformity errors and one reasonable combination of bending magnets which can reduce the horizontal COD by a factor of 5is given as the final installation sequence of the booster bending magnets in this paper.  相似文献   

15.
16.
We measure the waveform and phase curves of short optical pulses before and after transmission over different lengths of fibers by use of the pulse analyzer with the frequency-resolved optical gating (FROG),and numerically simulate pulse evolution under the experimental conditions.The nonlinear coefficient of the fiber is given by comparing the experimental results with the numerical ones.Difference between the experiment and numerical simulation is analyzed.  相似文献   

17.
Resonance scattering of elastic spherical shell and cylindrical shell while the surrounding fluid medium has absorption is studied. The normal mode solution derived using exact elastic theory and the separation of variables is still applicable. However, the scattering form function has to be modified for the absorbing medium, otherwise the unreasonable result would be obtained. The backscattering form function in the absorbing medium is redefined, and the form function of elastic spherical and cylindrical shell with vacuum or solid matter filled is calculated in various absorption conditions. The results show that the absorption of surrounding fluid leads to notable attenuation of the coincidence resonances in the mid-frequency, but it has a little influence on the low-frequency resonance scattering induced by the filler inside the shell.  相似文献   

18.
A versatile and low-cost single-beam self-referenced phase-sensitive surface plasmon resonance(SPR)sensing system with ultra-high resolution performance is presented.The system exhibits a root-mean-square phase fluctuation of ±0.0028.over a period of 45 min.i.e.a resolution of±5.2×10-9 refractive index units.The enhanced performance has been achieved through the incorporation of three design elements:a true single-beam configuration enabling complete self-referencing so that only the phase change associated with SPR gets detected,a differential measurement scheme to eliminate spurious signals not related to the sensor response,and the elimination of retardation drifts by incorporating temperature stabilization in the liquid crystal phase modulato .Our design should bring the detection sensitivity of non-labeling SPR biosensing closer to that achievable by conventional fluorescence-based techniques.  相似文献   

19.
Ta2O5 films are prepared on BK7 substrates with conventional electron beam evaporation deposition.The effects of SiO2 protective layers and annealing on the laser-induced damage threshold (LIDT) of the films are investigated.The results show that SiO2 protective layers exert little influence on the electric field intensity(EFI)distribution,microstructure and microdefect density but increase the absorption slightly.Annealing iS effective on decreasing the microdefect density and the absorption of the films.Both SiO2 protective layers and annealing are beneficial to the damage resistance of the films and the latter is more effective to improve the LIDT.Moreover,the maximal LIDT of Ta2O5 films is achieved by the combination of SiO2 protective layers and annealing.  相似文献   

20.
Gray cross correlation matching technique is adopted to extract candidate matches with gray cross correla- tion coefficients less than some certain range of maximal correlation coefficient called multi-peak candidate matches. Multi-peak candidates are extracted corresponding to three closest feature points at first. The corresponding multi-peak candidate matches are used to construct the model polygon. Correspondence is determined based on the local geometric relations between the three feature points and the multi-peak candidates. The disparity test and the global consistency checkout are applied to eliminate the remaining ambiguous matches that are not removed by the local geometric relational test. Experimental results show that the proposed algorithm is feasible and accurate.  相似文献   

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