溅射条件对Ni80Fe20薄膜各向异性磁电阻的影响

研究了基片温度和溅射气压对磁控溅射方法制备的Ni80Fe20磁性薄膜各向异性磁电阻的影响.实验发现基片温度是影响Ni80Fe20薄膜各向异性磁电阻最重要的因素.在较高的基片温度下,溅射气压对Ni80Fe20薄膜各向异性磁电阻也有较大的影响.基片温度在150~180℃,溅射气压在0.3~0.5 Pa范围内制备的Ni80Fe20薄膜有较大的各向异性磁电阻(3.7%~4.3%).     

垂直磁各向异性自旋阀结构中的铁磁共振

本文在理论上研究了垂直磁各向异性自旋阀结构中磁场激发和调节的铁磁共振. 通过线性展开包含自旋转移矩项的Landau-Lifshitz-Gilbert方程,获得了磁场激发和调节的铁磁共振谱. 给出了共振线宽、共振频率和共振磁场随直流电流密度大小和方向以及直流磁场的变化关系. 通过调节直流电流密度的大小和方向,系统的有效阻尼可以达到最小. 关键词： 自旋阀 自旋转移矩 垂直磁各向异性 铁磁共振     

生物磁铁矿的磁各向异性与磁接收器

磁铁矿是分布广泛且非常重要的亚铁磁材料,也广泛分布在生物体中。生物体中的磁铁矿具有完美的晶体结构,大多为超顺磁颗粒或单畴颗粒,且大多呈链状分布,具有明显的磁各向异性。生物体中存在“磁接收器”,生物磁铁矿是“磁接收器”的生物物理基础。本文中,从超顺磁磁铁矿颗粒和单畴磁铁矿颗粒的物理特性出发,主要是从它们的磁各向异性特性的基础上描述了生物磁铁矿和“磁接收器”的工作机制,即在某些条件下,在外界地磁场强度量级的磁场作用下,超顺磁颗粒或单畴颗粒可以诱导产生足够强的磁场,使邻近的晶体可以相互吸引或排斥,这些粒子间的相互作用可以改变晶体颗粒束所在的外围机体形状,而神经系统可以探测到单独的粒子束或一列粒子束的扩张或收缩,因此生物体就可以探测到磁场的方向以及强度等磁场参量。     

生物磁铁矿的磁各向异性与磁接收器

磁铁矿是分布广泛且非常重要的亚铁磁材料,也广泛分布在生物体中。生物体中的磁铁矿具有完美的晶体结构,大多为超顺磁颗粒或单畴颗粒,且大多呈链状分布,具有明显的磁各向异性。生物体中存在“磁接收器”,生物磁铁矿是“磁接收器”的生物物理基础。本文中,从超顺磁磁铁矿颗粒和单畴磁铁矿颗粒的物理特性出发,主要是从它们的磁各向异性特性的基础上描述了生物磁铁矿和“磁接收器”的工作机制, 即在某些条件下,在外界地磁场强度量级的磁场作用下,超顺磁颗粒或单畴颗粒可以诱导产生足够强的磁场,使邻近的晶体可以相互吸引或排斥, 这些粒子间的相互作用可以改变晶体颗粒束所在的外围机体形状,而神经系统可以探测到单独的粒子束或一列粒子束的扩张或收缩,因此生物体就可以探测到磁场的方向以及强度等磁场参量。     

Co/Ni多层膜垂直磁各向异性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层的Co/Ni多层膜样品, 对影响样品垂直磁各向异性的各因素进行了调制, 通过样品的反常霍尔效应系统的研究了Co/Ni多层膜的垂直磁各向异性. 结果表明, 多层膜中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要的影响. 通过对多层膜各个参数的调制优化, 最终获得了具有良好的垂直磁各向异性的Co/Ni多层膜最佳样品Pt(2.0)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2.0), 经计算, 该样品的各向异性常数K_eff 达到了3.6×10⁵ J/m³, 说明样品具备良好的垂直磁各向异性. 最佳样品磁性层厚度仅为0.8 nm, 样品总厚度在5 nm以内, 可更为深入的研究其与元件的集成性.     

Mo覆盖层对MgO/CoFeB/Mo结构磁各向异性的影响

研究了Mo覆盖层厚度对MgO/CoFeB结构磁各向异性的影响. 研究发现, 加平行磁场生长出来的MgO/CoFeB/Mo样品表现为面内各向异性, 并且随着CoFeB的厚度减小, 面内各向异性逐渐减弱; 在CoFeB厚度减小到1.1 nm时, 仍可以保持面内各向异性, 垂直方向的外加饱和场逐渐减少; 厚度在0.9 nm及以下的情况下, 面内各向异性消失. 改变Mo覆盖层厚度, 当t_Mo= 1.6 nm时, 垂直方向的饱和场最小. 当生长过程的磁场变为垂直磁场时, 不同厚度的Mo覆盖层对MgO/CoFeB 的磁各向异性影响不同. Mo厚度在1 nm及以下时MgO/CoFeB/Mo样品表现为面内各向异性, Mo覆盖层厚度在1.2和5 nm之间时样品出现了垂直磁各向异性; 并且垂直方向的矫顽力也发生了变化, Mo覆盖层厚度为1.4 nm时样品的磁滞损耗会大一些.     

磁各向异性测量实验装置

介绍一种自制的磁各向异性测量装置，该装置结构简单，造价低廉，在测量过程中显示工作原理清楚直观，使用磁性薄膜中小颗粒作为样品，测量结果稳定可靠，适合学生实验使用。     

YIG中生长感生磁各向异性的来源

为了研究YIG中生长感生磁各向异性的来源,穆斯堡尔测量扩展到低温。发现在170K以下,K_u为负,即有一自旋再取向。计算表明,0.01%Fe²⁺的单离子各向异性可以说明观察到的K_u(T),假定Fe²⁺离子优先占据除(1/4 1/4 1/4)和(3/4 3/4 3/4)外的八面体晶位。 关键词：     

基于工艺偏差的自旋转移矩辅助压控磁各向异性磁隧道结电学模型及其应用研究

自旋转移矩辅助电压调控磁各向异性磁隧道结(STT辅助VCMA-MTJ)作为非易失性全加器(NV-FA)中的核心部件,具有切换速度快、功耗低,稳定性好等优点,将在物联网、人工智能等领域具有良好的发展前景.然而随着磁隧道结(MTJ)尺寸的不断缩小以及芯片集成度的不断提高,工艺偏差对MTJ及NV-FA电路性能的影响将变得越来越显著.本文基于STT辅助VCMA-MTJ磁化动力学,在充分考虑薄膜生长工艺偏差以及刻蚀工艺偏差影响的情况下,建立了更为精确的STT辅助VCMA-MTJ电学模型,研究了上述两种工艺偏差对MTJ及NV-FA电路性能的影响.结果表明,当自由层厚度偏差γ_tf≥6%或氧化层厚度偏差γ_tox≥0.7%时,MTJ将无法实现状态切换;当隧穿磁阻率偏差β增大到30%时,读取裕度SM将下降高达17.6%.对于NV-FA电路,通过增大电压V_b1以及写‘0’时增大电压V_b2或写‘1’时减小V_b2,可有效降低非易失性加数写入错误率;通过增大逻辑运算驱动电压V_dd,可...     

Spin-dependent thermoelectric effect in Co2Fe0.4Mn0.6Si thin film with perpendicular magnetic anisotropy

We report the anomalous Nernst effect in trilayers containing a thin film of the half-metallic ferromagnetic Heusler alloy Co₂Fe_0.4Mn_0.6Si with perpendicular magnetic anisotropy. The structure is MgO/CFMS/Pd and we have studied the variation of anomalous Hall and Nernst effects as a function of CFMS and Pd thickness. The anomalous Nernst coefficient reaches 0.5 μV/K at room temperature and we have observed a strong dependence of the anomalous Nernst coefficient on the thickness of both layers. Our results indicate that inducing perpendicular magnetic anisotropy in a strongly spin-polarising Heusler alloy such as CFMS is very promising for new thermoelectric devices based on exploiting the anomalous Nernst effect.     

Underlayer dependence of electric field effect on magnetic anisotropy and its volatility in CoFeB/MgO structures

We report the dependence of voltage-controlled magnetic anisotropy (VCMA) effect and its volatility on an underlayer (UL) in CoFeB/MgO structures. For a sample with Ta or Pt UL, the VCMA effect occurs when the applied gate voltage (V_g) exceeds a critical value, and it persists even after removing V_g. This is in contrast to the volatile VCMA effect and its linear dependence on V_g in a sample with W UL. Furthermore, we demonstrate that the volatility of the VCMA effect can be modified by introducing a Ta/W bilayer, enabling arbitrary control of the magnetic properties via VCMA effect.     

CoFeB/Pt多层膜的垂直磁各向异性研究

具有垂直磁各向异性的磁性纳米结构是自旋转移力矩器件的重要研究内容, 本文采用反常霍尔效应系统地研究了磁控溅射法制备的[CoFeB/Pt]_n多层膜的垂直磁各向异性. 当CoFeB的厚度小于0.6 nm时, 可以在[CoFeB/Pt]_n多层膜中观察到清晰的垂直磁各向异性, 其垂直磁各向异性强烈依赖于CoFeB和Pt层厚度及多层膜周期数. 当多层膜周期数n ≥ 5时, 出现零剩磁现象. 另外, [CoFeB/Pt]_n多层膜的矫顽力均小于2 kA·m^-1, 有望作为垂直自由层的重要侯选材料应用于垂直磁纳米结构中.     

Origin of magnetization-induced anisotropy of magnetic films

It is proposed that the magnetization-induced anisotropy of magnetic films of cubic crystal structure originates from the anisotropy of atomic pair ordering, shape anisotropy, and strain anisotropy resulting from the constraint of the magnetostriction strain imposed on the film by the substratc. Calculated are the three anisotropy constants and their sum K vs temperature for Ni, Fe, and 55%Ni-Fe films; the room temperature （RT） constants vs the substrate temperature Tt during deposition or annealing after deposition for Ni and 50%Ni Co films; the RT constants vs com- position fraction for Fe-Ni films with Tt = RT, 250℃ and 450℃, Co Ni films at Tt = RT, 100℃ and 320℃, and Fe-Co films with Tt = RT and 300℃; the spread of RT K vs composition fraction for Fe Ni films; and RT △K/K vs composition fraction for Fe-Ni and Co Ni films, where △K denotes the variation of K of the film that is detached from its substrate. The calculated curves well accord with the measurements. The irrelevancy of K to the substrate material and the fast kinetics of the annealing in a field applied in the direction of the hard axis are explained reasonably.[第一段]     

MgO/Pt界面对增强Co/Ni多层膜垂直磁各向异性及热稳定性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层和MgO/Pt双底层的Co/Ni多层膜样品, 通过反常霍尔效应研究了不同MgO厚度和退火温度对样品垂直磁各向异性(perpendicular magnetic anisotropy, PMA)的影响. 随着底层中MgO厚度的逐渐增加, 样品的矫顽力也随之增强, 霍尔电阻变化不大; 对样品进行退火处理后发现, 单纯Pt底层的Co/Ni多层膜随着退火温度的升高, 霍尔电阻逐渐降低, 矫顽力则迅速降低, 热稳定性较差; 而当MgO/Pt双底层的样品在200 ℃退火后矫顽力大幅增加, 霍尔电阻略微有所减小, 更高的退火温度使得Co和Ni合金化, 导致多层膜的PMA特征减弱.     

Determination of the magnetic anisotropy constant of Cu/Fe/SiO2/Si by a magneto-optical Kerr effect susceptometer

The magneto-optical Kerr effect susceptometry technique is proposed to determine the uniaxial magnetic anisotropy(UMA) constant Ku. The magnetic properties of Cu/Fe/SiO2/Si grown by dc magnetron sputtering were investigated. The in-plane uniaxial magnetic anisotropy was probed by the magneto-optical Kerr effect(MOKE). The value of UMA, Ku= 2.5×103J/m3, was simulated from the field dependence of ac susceptibility along the hard axis according to the Stoner–Wohlfarth(S–W) model, which is consistent with Ku= 2.7×103J/m3 calculated from the magnetic hysteresis loops. Our results show that the magneto-optical Kerr effect susceptometry can be employed to determine the magnetic anisotropy constant owing to its high sensitivity.     

Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is presented.The samples show strong perpendicular magnetic anisotropy(PMA) when the thickness of CoFeB is 0.9 nm and 1.1 nm.The saturation magnetic moment and interface anisotropy constant are 1566 emu/cm~3 and 3.75 erg/cm~2,respectively.The magnetic dead layer(MDL) is about 0.23 nm in this system.Furthermore,strong capping layer thickness dependence is also observed.The strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 nm.To maintain PMA,the metal layer could not be too thin or thick in these multilayers.The oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.     

Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As

We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance(PHR).Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields(below 1000 Gs,1 Gs = 10-4 T),which can be explained by competition between Zeeman energy and magnetic anisotropic energy.It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one.The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing.This gives a useful way to tune the magnetic anisotropy of ultrathin(Ga,Mn)As devices.