Tb3+,Eu3+单掺杂、双掺杂SrSiO3的合成、结构表征与发光性能

采用液相沉淀法合成了铽单掺杂,铕单掺杂,铽、铕双掺杂的硅酸锶发光材料。其结构经X-射线衍射表征。研究了合成样品的激发、发光光谱。研究结果表明:在254nm波长紫外光激发下,SrSiO₃:0.04Eu³⁺的发光光谱中出现4个Eu³⁺的发光峰,分别为Eu³⁺的⁵D₀→⁷F₁（588、590nm）、⁵D₀→F₂（609nm）、⁵D₀→⁷F₃（626nm）、⁵D₀→⁴F₄（651nm）跃迁峰;SrSiO₃:0.04Tb³⁺的发光光谱中出现4个Tb³⁺的发光峰,分别为Tb³⁺的⁵D4→^F₆（488nm）、⁵D₄→⁷F₅（541、548nm）、⁵D₄→⁷F₄（584nm）跃迁峰;SrSiO₃:0.04Tb³⁺,0.04Eu³⁺发光体系中,Tb³⁺的共掺杂显著增强了Eu³⁺的特征发射,存在Tb³⁺→Eu³⁺的能量传递现象,结果表明有Eu³⁺和Tb³⁺两个发光中心。     

Bi3+掺杂对Sr2MgSi2O7∶Eu2+荧光粉的结构及发光性能的影响

采用溶胶-凝胶法在还原气氛下制备了Sr₂MgSi₂O₇∶Eu²⁺,xBi³⁺(x=0,0.02,0.04,0.06,0.08,0.1)荧光粉,并用XRD、TG-DTA及激发与发射谱仪对样品的结构及发光性能进行了表征。结果发现:单掺杂Bi³⁺的Sr₂MgSi₂O₇样品的发射光谱所用的材料的激发光谱为一主峰为286 nm的宽带谱,这是由于激发态时Bi³⁺的³P₁→¹S₀电子能级跃迁而造成的;单掺杂Eu²⁺的Sr₂MgSi₂O₇样品的发射光谱所用的材料的激发光谱为一主峰为358 nm的宽带谱,这是典型的Eu²⁺的4f⁶5d¹→4f⁷跃迁而引起的。当Bi³⁺离子掺杂到Sr₂MgSi₂O₇∶Eu²⁺样品的摩尔分数为0.04时,样品的发射强度是未掺杂Bi³⁺离子样品的1.9倍。     

近紫外激发具有颜色可调的Er3+/Eu3+共掺BiOCl荧光粉

本文采用固相法在500℃合成了Er³⁺/Eu³⁺共掺BiOCl 荧光粉, 并通过XRD, SEM, 吸收, 激发和发射光谱研究了其结构、形貌和发光特性. XRD 和SEM结果表明在500℃下即可成功合成纯四方相片层结构的Er³⁺/Eu³⁺共掺BiOCl荧光粉. 吸收光谱表明掺杂Er³⁺/Eu³⁺离子使BiOCl形成杂质能级; 激发光谱显示该荧光粉具有来自于基质BiOCl价带(VB)到导带(CB)跃迁的优异宽带近紫外激发特性. 在380 nm近紫外光激发下, 同时获得了Er³⁺离子和Eu³⁺离子的特征发射峰, 其中发光中心位于410 nm (²H_9/2→⁴I_15/2), 525 nm (²H_11/2→⁴I_15/2), 554 nm (⁴S_3/2→⁴I_15/2), 673 nm (⁴F_9/2→⁴I_15/2)的发射峰来自于Er³⁺离子的跃迁, 而581 nm(⁵D₀→⁷F₀), 594 nm (⁵D₀→⁷F₁), 622 nm (⁵D₀→⁷F₂), 653 nm (⁵D₀→⁷F₃), 699 nm (⁵D₀→⁷F₄)的发射峰则来自于Eu³⁺离子的跃迁. 值得注意的是, 与传统Er³⁺/Eu³⁺掺杂的材料不同, 该荧光粉还具有独特高效的紫光(Er³⁺)和长波红光(Eu³⁺)发射特性, 分析表明这与BiOCl的结构有关; 并且通过改变掺杂浓度, 实现了发光颜色由黄绿光→黄光→橙红光的调节. 研究结果表明Er³⁺/Eu³⁺共掺BiOCl荧光粉有望成为一种潜在的近紫外激发白光LED荧光粉.     

Sr3B2O6：Eu3+,Li+荧光粉的合成与发光性能

采用高温固相法合成Sr₃B₂O₆：Eu³⁺,Li⁺红色荧光粉,考察了激活剂Eu³⁺和电荷补偿剂Li⁺浓度对Sr₃B₂O₆：Eu³⁺,Li⁺荧光粉发光性能的影响。结果表明：适量掺杂Eu³⁺、Li⁺离子并不改变Sr₃B₂O₆的结构。当Eu³⁺掺杂量为4%、Li⁺的掺杂量为8%时,在900 ℃下灼烧2 h可以得到发光性能最佳的Sr_2.9B₂O₆：0.04Eu³⁺,0.08Li⁺红色荧光粉。以394 nm的近紫外光激发时,Sr₃B₂O₆：Eu³⁺,Li⁺荧光粉发射出红光,对应于Eu³⁺的4f-4f 跃迁,其中以614 nm附近的⁵D₀→⁷F₂跃迁发光最强,是一种有潜力用于白光LED的红色荧光粉。     

Sr2+掺杂荧光粉Ca2Nb2O7：Eu3+的发光特性

采用高温固相法制备出Ca_1.97-xSr_xNb₂O₇：3%Eu³⁺（x=0.10,0.50,1.0,1.5,1.97）红色荧光粉,研究了Ca_1.97-xSr_xNb₂O₇：3%Eu³⁺的发光特性及Sr²⁺的浓度对该荧光粉发光性质的影响。随着Sr²⁺浓度的改变,Ca_2-xSr_xNb₂O₇：Eu³⁺的XRD呈现不同的相。Ca_1.97Nb₂O₇：3%Eu³⁺（x=0）的激发光谱中,302 nm附近的强宽带来自于O^2-→Eu³⁺电荷转移跃迁,272 nm附近的肩峰来自于NbO^7-₆基团的电荷转移跃迁,350~600 nm范围内的锐锋属于Eu³⁺的特征4f-4f组内跃迁。在398 nm激发下,发射光谱的最强峰位于616 nm,属于Eu³⁺的⁵D₀→⁷F₂电偶极跃迁,发射出强烈的红光。当Ca²⁺逐渐被Sr²⁺取代时,Ca_2-xSr_xNb₂O₇：Eu³⁺的各激发峰的强度先提高后降低,且O^2-→Eu³⁺电荷转移跃迁发生明显红移。少量Sr²⁺的掺杂可以有效提高Ca_2-xSr_xNb₂O₇：Eu³⁺ 的红光发射强度,当x=0.01时该荧光粉的红光发射达到最强,可以被紫外LED芯片激发。     

二氧化锆纳米材料中Eu3+的发光特性

研究了掺1mol%Eu³⁺的二氧化锆纳米材料随退火温度变化的发光性质，得到退火温度为600和800℃的样品中Eu³⁺的⁵D₀→⁷F₂发射在604nm处，这种现象不多见. 几种经不同退火温度处理的纳米材料样品在紫外光的照射下，稀土离子Eu³⁺的⁵D₀→⁷F₂发射的发光逐 关键词： 二氧化锆 纳米材料 3+')" href="#">Eu³⁺ 发光     

掺杂离子对白色长余辉发光材料Y2O2S:Tb3+, Eu3+,M2+ (M=Mg,Ca, Sr,Ba),Zr4+性能的影响

采用高温固相法制备了白色长余辉发光材料Y₂O₂S:Tb³⁺, Eu³⁺,M²⁺(M=Mg, Ca, Sr, Ba), Zr⁴⁺, 利用X晶体衍射、发光光谱、余辉曲线和热释光曲线等对制备的材料进行表征。结果表明:掺杂离子没有改变样品晶体结构和发射峰的位置,但对其发光强度、余辉时间及陷阱深度有较大的影响。在263 nm紫外光的激发下,469 nm和626 nm的发射分别对应于Eu³⁺的⁵D₂→⁷F₀、⁵D₀→⁷F₂跃迁,544 nm的发射对应于Tb³⁺的⁵D₄→⁷F₅跃迁,主要通过它们的混合产生白光。掺杂不同二价离子样品的余辉性能按Mg²⁺、Sr²⁺、Ca²⁺、Ba²⁺的顺序递减,其中掺杂Mg²⁺的样品,色度坐标为(0.29,0.32),陷阱深度为1.17 eV,余辉时间长达320 s(≥1 mcd/m²),表现出最佳的发光性能。     

红色荧光粉La2Mo2O9:Eu3+,W6+的制备及发光性能

采用高温固相法合成出La₂Mo₂O₉:Eu³⁺,W⁶⁺系列红色荧光粉,其结构为立方晶系的β- La₂Mo₂O₉。在395 nm光激发下,样品La_1.40Mo₂O₉:0.60Eu³⁺发射出很强的红光,最强发射峰位于616 nm处。适量地掺杂W⁶⁺离子可以提高样品的激发和发射强度,在395 nm光激发下,La_1.40Mo_1.84O₉:0.60Eu³⁺,0.16W⁶⁺荧光粉的Eu³⁺的⁵D₀→⁷F₂跃迁发射强度最大,是样品La_1.40Mo₂O₉:0.60Eu³⁺的1.23倍。最后,将La_1.40Eu_0.60Mo_1.84O₉:0.16W⁶⁺荧光粉与~395 nm发射的InGaN芯片一起制作成红光发光二极管(LED),该LED发射出很强的红光。     

Ca2Li2BiV3O12∶Eu3+荧光粉的制备和发光性能

采用高温固相法成功合成了一种可用于白光LED的Ca₂Li₂BiV₃O₁₂∶Eu³⁺新型红色荧光粉,使用X射线衍射仪和荧光分光光度计对合成样品进行了表征,研究了合成温度和Eu³⁺含量对合成样品相组成和发光性能的影响。结果表明,采用高温固相法在650~700 ℃能合成纯度较高、结晶度好的Ca₂Li₂BiV₃O₁₂∶Eu³⁺荧光粉,合成样品激发带覆盖200~400 nm,发射光谱的线状发射峰可归属于Eu³⁺的⁵D₀→⁷F_J(J= 1, 2, 3,4)特征锐线发射,Eu³⁺摩尔分数为14%时荧光粉的发光强度最大。     

Ba3WO6:Eu3+红色荧光粉的结构及其发光特性

以高温固相法成功合成了一系列Eu³⁺离子激活Ba₃WO₆红色荧光粉。分别采用X射线衍射（XRD）和荧光光谱（FL）对样品的晶体结构和发光性能进行了表征。结果表明,样品均具有立方晶系的双钙钛矿结构;Eu³⁺离子的激发谱由一个宽带（包括Eu³⁺-O^2-和W⁶⁺-O^2-电荷转移带）和若干个窄峰（4f-4f电子跃迁）组成,而跃迁⁵D₀→⁷F₁和⁵D₀→⁷F₂则构成了发射谱的主要部分。调整原材料中BaCO₃和WO₃的量的比,XRD的主衍射峰位发生红移至与标准谱完全吻合,发光强度有所提升并分析了原因。Eu³⁺离子的临界摩尔分数为0.05,临界距离（R_c）为1.263 4 nm。在314 nm或394 nm激发光下,样品发出红光（λ_max=596 nm）,色坐标为（0.618,0.342）,在LED照明、显示等领域具备一定潜力。     

Fine structure and isotope shift of the 3s4d 3 D-3s3p 3 P, 3s5d 3 D-3s3p 3 P and 3p 2 3 P-3s3p 3 P Transitions of MgI

Summary We report the measurements of the³ D(3s4d)-³ P(3s3p)³ D(3s5d)-³ P(3s3p), and³ P(3p ²)-³ P(3s3p) transition frequency of MgI, the fine-structure separation and isotope shift between²⁴Mg and²⁶Mg. The measurements have been performed in a metastable atomic beam; a good agreement is found for data already existing in the literature. The accuracy of the measurements reported in this paper is mainly limited by the Doppler broadening of theI ₂ transitions used as a reference and by the precision in the knowledge of the related wavelengths.     

The gas phase infrared band contours of s-triazine and s-triazine-d3: The fundamentals of C3N3H3 and C3N3D3 and some overtone and combination bands of C3N3H3

The systematic application of band contour techniques to account for most of the observed features of the ir spectra of s-triazine and s-triazine-d₃ have been made as well as a critique as to the limitations of such methods. The experimental and computer methods used to study the gas phase infrared band contours of s-triazine and s-triazine-d₃ are out-lined. Contours of the five E′ fundamentals of s-triazine have been recorded under moderate resolution and analyzed to give the Coriolis constants $\text{ζ}{}_{\mathrm{i}}{}^{\mathrm{z}}$, i = 6–10. The effects of l-resonance are very apparent for ν₈ and ν₉, in the form of holes in the Q branches of these bands. Under the highest resolution available, ν₆ and ν₁₀ also show l-resonance effects. Values of the l-doubling constants $\text{q}{}_{\mathrm{i}}{}^{\mathrm{(+)}}$ were obtained for these four fundamentals. One of the parallel A₂″ fundamentals of C₃H₃N₃ (ν₁₂) has also been studied. It lies close to ν₁₀(E′) and an A × E type of second-order Coriolis resonance may be the cause of the intensity enhancement observed in the inner wings of the ν₁₂ and ν₁₀ bands. Hot bands of the type (ν_i + nν₁₄ ? nν₁₄) have been observed in the contours of ν₈, ν₁₀, and ν₁₂. This is felt to be responsible for the large difference between our observed zeta sum (?1.30) and the theoretical sum (?1.00).The gas phase infrared band contours of the five E′ and 2A₂″ fundamentals of C₃N₃D₃ have also been recorded under moderate resolution. From P-R separations and by computer simulation of the contours, values of the Coriolis constants $\text{ζ}{}_{\mathrm{i}}{}^{\mathrm{z}}$ have been obtained for the E′ modes. The effects of l-resonance have been observed for ν₈(E′) and ν₁₀(E′) and values of the l-doubling constants $\text{q}{}_{\mathrm{i}}{}^{\mathrm{(+)}}$ have been estimated. An extensive series of hot bands of the type (ν₁₂ + nν₁₄ ? nν₁₄) has been observed in the contour of the ν₁₂ (A₂″) fundamental. The mass effect on the Coriolis constants has been discussed.Infrared band contours of the overtone 2ν₇ and seven degenerate E′ combination bands of C₃N₃H₃ have been recorded under moderate resolution. Analysis of these contours using the P-R separation method and computer simulation of the contours has given values of $\text{ζ}{}_{\mathrm{<mtext>eff</mtext>}}{}^{\mathrm{z}}$ for these bands. Fermi resonance between 2ν₇ and ν₆ has been analyzed. The importance of considering both the observed contour as well as the observed frequency when assigning higher tone bands is illustrated.     

LaGaO3:RE3+(RE3+=Eu3+,Ho3+)的光谱

本文用固态反应合成了钙钛矿型的LaGaO3和LaGaO3:RE3+(RE3+=Eu3+,Ho3+)荧光体,并观察了物相随不同的激活离子浓度的变化。测量了化合物在室温下的反射光谱,激发光谱和荧光光谱。研究了Eu3+的D0→7F2和Ho3+的5S2→5I8的荧光强度与激活离子浓度的关系,发现了浓度猝灭,并得到了最大荧光强度的浓度值。     

Dielectric investigations of solid solutions SrTiO3-KTaO3 and SrTiO3-KNbO3

The temperature dependences of the dielectric constant and dielectric hysteresis loops in ceramic samples of (1 ? x)SrTiO_3?x KNbO₃ and (1 ? x)SrTiO_3?x KTaO₃ (0 ≤ x ≤ 0.3) solid solutions prepared using different heat treatments have been investigated. Phase diagrams of the studied solid solutions have been constructed in the T-x coordinates. It has been shown that, after quenching of samples (spontaneous cooling at room temperature after long-term heating at the sintering temperature of the ceramic samples), the temperature of the induced phase transition increases because of the weakening of random electric fields associated with nonisovalent impurities due to their “frozen” nonequilibrium redistribution. For small concentrations x, strong dielectric relaxation is observed in the temperature range of 150–250 K. A model of relaxing centers, which is based on the local charge compensation of heterovalent impurities, has been proposed.     

Infrared spectra of matrix isolated BH3NH3, BD3ND3, and BH3ND3

The infrared spectra of ammonia-borane, BH₃NH₃, and two of its deuterated isotropic species, BD₃ND₃ and BH₃ND₃, isolated in argon matrix at liquid hydrogen temperature have been measured. Well resolved bands for these three isotopic species have been observed for all the fundamentals. A complete frequency assignment based on C₃v molecular symmetry has been made. A set of force constants have been calculated from the data for the two isotopes BH₃NH₃ and BD₃ND₃ using a valence force field. The agreement between experiment and frequencies calculated from these force constants for the mixed isotopic species, BH₃ND₃, substantiates the present assignment.     

O_3 fast and simple treatment-enhanced p-doped in Spiro-MeOTAD for CH_3NH_3I vapor-assisted processed CH_3NH_3PbI_3 perovskite solar cells

We demonstrate a simple and fast post-deposition treatment with high process compatibility on the hole transport material(HTM) Spiro-MeOTAD in vapor-assisted solution processed methylammonium lead triiodide(CH_3NH_3PbI_3)-based solar cells. The prepared Co-doped p-type Spiro-MeOTAD films are treated by O_3 at room temperature for 5 min,10 min, and 20 min, respectively, prior to the deposition of the metal electrodes. Compared with the traditional oxidation of Spiro-MeOTAD films overnight in dry air, our fast O_3 treatment of HTM at room temperature only needs just 10 min,and a relative 40.3% increment in the power conversion efficiency is observed with respect to the result of without-treated perovskite solar cells. This improvement of efficiency is mainly attributed to the obvious increase of the fill factor and short-circuit current density, despite a slight decrease in the open-circuit voltage. Ultraviolet photoelectron spectroscopy(UPS) and Hall effect measurement method are employed in our study to determine the changes of properties after O_3 treatment in HTM. It is found that after the HTM is exposed to O_3, its p-type doping level is enhanced. The enhancement of conductivity and Hall mobility of the film, resulting from the improvement in p-doping level of HTM, leads to better performances of perovskite solar cells. Best power conversion efficiencies(PCEs) of 13.05% and 16.39% are achieved with most properly optimized HTM via CH_3NH_3I vapor-assisted method and traditional single-step method respectively.     

Ba3La(BO3)3基质中Tb3+的光致发光

以高温固相法合成了Ba3La(BO3)3∶Tb3 发光材料。在254nm紫外光激发下,研究了Ba3La(BO3)3∶Tb3 的激发光谱、发射光谱、发光强度与Tb3 浓度的关系。确定了Ba3La(BO3)3基质中Tb3 的自身浓度猝灭机理;探讨了助熔剂LiCO、敏化剂Ce3 、Bi3 的加入对荧光粉的发光强度的影响。     

Terahertz Vibrational Modes in CH3NH3PbI3 and CsPbI3 Perovskite Films

JETP Letters - Films of CH3NH3PbI3 organometallic perovskite, which is currently considered as a promising basic material for new-generation solar cells, as well as films containing CsPbI3...     

Far Infrared Spectra of Ammonia-Boron Trifluoride: NH3BF3 and ND3BF3

Abstract

Spectra of polycrystalline samples of NH₃BF₃ and ND₃BF₃ at 300 K and 98 K have been recorded in the frequency range 20-400 cm^?1. Isotopic frequency ratios are used to interpret the observed features in terms of the known molecular and crystal structures.