Simulation of surfactant effects on the growth of metal homoexpitaxial Sb-Ag/Ag(111)

A kinetic Monte Carlo simulation is performed in order to study the effect of Sb atoms as a surfactant on the growth of Ag on Ag(111).In our model the repulsive mechanism in which the surfactant Sb atoms repel diffusing Ag adatoms,and the exchange mechanism between Ag and Sb atoms,are considered.Our simulations show that the effects of Sb atoms for Ag/Ag(111) growth system are mainly to increase the chances for Ag atoms to overcome the Ehrlich-Schwoebel barrier both in the interlayer growth and along the edge diffusion.The influence of the coverage of Sb atoms and substrate temperature on the growth of Ag/Sb/Ag(111) is discussed.     

Modelling self-ordering behaviour on Ag covered Pt vicinal surfaces

We use computer simulation to explore the formation process of a monolayer of Ag on a stepped Pt(111) substrate and the formation of 3D Pt nanostructures on an Ag covered (111) and (100) Pt substrate. We show that broken lines of Pt nanostructures are preferred at the step edges on the (111) substrate while continuous lines of Pt nanowires are preferred at the step edge on the (100) substrate. This different behaviour is due to the exposed front facet of the nanostructures running along the step, specifically for the (100) stepped substrate a nanowire grown on the step edge has a stable (111) exposed front facet, whereas a nanowire grown on the (111) substrate would have an unstable (100) front facet (depending on the direction of the step). For the Pt nanowires grown on the (100) substrate we show how arriving Pt dimers (and monomers) preferentially move up off the Ag substrate onto the nanowire's (111) facet where they undergo fast diffusion. We also show that these Pt dimers (and monomers) move up and down the nanowire's facet until a vacancy or defect is encountered.     

Growth mode and interface structure of Ag on the HF-treated Si(111):H surface

A growth mode and interface structure analysis has been performed for Ag deposited at a high temperature of 300°C on the HF-treated Si(111):H surface by means of medium-energy ion scattering and elastic recoil detection analysis of hydrogen. The measurements show that Ag grows in the Volmer-Weber mode and that the Ag islands on the surface are epitaxial with respect to the substrate. The preferential azimuthal orientation is A-type only when Ag is deposited slowly. The interface does not reconstruct to the √3 × √3-Ag structure, which is normally observed for Ag deposition above 200°C on the Si(111)7 × 7 surface, but retain bulk-like structure. The presence of hydrogen at the interface is demonstrated after deposition of thick (1100 Å) Ag films. However, the amount of hydrogen at the interface is not a full monolayer. This partial desorption of hydrogen from the interface explains why the Schottky barrier heights of Ag/Si(111):H diodes are close to those of Ag/Si(111)7 × 7 and Ag/Si(111)2 × 1.     

Towards an understanding of surfactant action in the epitaxial growth of metals: The case of Sb on Ag (111)

We address the role of surfactant adsorbates in determining changes in the homoepitaxial growth mode of metals, discussing the case of Sb on Ag (111). From ab initio calculations, we extract evidence that the mechanism operative in this system is that Sb induces an irregular shape and an increase in density of the growing Ag islands, and an ensuing increase of the number of attempts for an adatom to descend to a lower terrace. This results from a combination of peculiar properties of this system: Sb is adsorbed insubstitutional surface sites, leading to the formation of a Sb–Ag surface alloy; deposited Ag has reduced mobility on Sb-covered Ag (111), from which follows a higher nucleation probability. The island shape is irregular since the surface alloy is disordered. Surface seggregation of Sb once the growing layer is completed furthers the phenomenon for many deposited Ag layers. Our explanation of the surfactant action of Sb on Ag (111) does not require a reduction of the downstep diffusion barrier, which may, however, be a concurrent factor helpful to interlayer mass transport and layerby-layer growth.     

Ag(111)和Au(111)上铋的初始生长行为

半金属铋(Bi)的表面合金具有的Rashba效应,和其具体结构性质有重要关联.本文结合扫描隧道显微镜(STM)和密度泛函理论(DFT),系统地研究了Bi原子在Ag(111)和Au(111)上的不同初始生长行为.在室温Ag(111)上,连续的Ag2Bi合金薄膜会优先在Ag台阶边缘形成;在570 K Ag(111)上,随着...     

Atomic Displacements in the α–β Phase Transition in Ag 2 S and in Ag 2 S/Ag Heterostructure

Orientation relationships between low-temperature monoclinic semiconductor α-Ag2S acanthite and high-temperature body-centered β-Ag2S argentite are determined. It is shown that, in cubic argentite, possible distances between silver atoms are too small for the sites of the metal sublattice to be occupied by Ag atoms with probability equal to one. With regard to the possible arrangement of Ag atoms, it is shown that, during the “acanthite–argentite” transformation, the jump of a silver ion from site (e) of monoclinic acanthite to site (j) of cubic argentite is the most probable process. It is established that the acanthite–argentite transformation in Ag2S/Ag heteronanostructure is accompanied by the formation of a conductive channel of silver Ag and β-Ag2S argentite under the application of an external voltage. The on-to-off-state current ratio in the synthesized Ag2S/Ag heteronanostructure is approximately equal to 670. For the Ag2S/Ag heteronanostructure, the energy barrier for the hopping of an Ag+ ion from an atomic site of monoclinic acanthite to a site of cubic argentite is estimated.     

Surface-state depopulation on small Ag(111) terraces

The dependence of the local density of states near the Fermi energy E(F) on the width of terraces T is investigated by tunneling scanning spectroscopy on Ag(111) at 7 K. With decreasing T, the electronic density in the occupied surface state shifts monotonically towards E(F), leading to a depopulation at T=3.2 nm in quantitative agreement with a Fabry-Pérot model. Depopulation coincides with a switch from confinement by terrace modulation to step modulation.     

Surface mass transport of Ag and In on vicinal Si(111)

Mass transport of Ag and In on vicinal Si(111) has been investigated by scanning Auger microscopy (SAM). Highly anisotropic surface diffusion and surface electromigration due to direct current were observed for Ag and In adatoms on 0°−, 0.5°−, 3°− and 6°−off vicinal Si(111) surfaces. The diffusion on the intermediate layer is strongly enhanced in the direction parallel to the step edge for Ag adatoms, while it is remarkably suppressed in the direction perpendicular to the step edge for In adatoms. The activation energy of the diffusion for the Ag adatoms ranged between 0.81 and 1.3 eV, while that for In adatoms increased from 0.31 to 0.66 eV with increasing the vicinal angle. The anisotropic diffusion transport is explained in terms of the step structure and the difference in the binding energy at the step site and the terrace site.     

Reconstruction-Determined Diffusion of Ag Adatoms on the Si(111)-(7X7) Surface

Surface diffusion is one of the basic processes determining morphology of a growing film. In the case of metal heteroepitaxy on Si(111)-(7X7) the diffusion is strongly affected by the presence of surface reconstruction, which introduces additional constraints into the motion of deposited atoms. To determine diffusion parameters we used two different approaches: i) interpretation of experimentally observed morphologies by a coarse-grained kinetic Monte Carlo model, ii) direct observation of adatom movement using UHV STM. The attempt frequency and the barrier to hopping of a single Ag atom between half-unit cells of the reconstruction were estimated in both cases. Obtained values are compared and discussed.     

Initial growth processes of Ag on polar and non-polar semiconductor substrates

Initial growth processes of Ag on both InSb(111)A and α-Sn(111) substrates at room temperature have been investigated by using reflection high-energy electron diffraction and Auger electron spectroscopy. The results show that the growth features are quite different for each system: Ag grows in the Stranski-Krastanov mode on InSb(111)A, while for Ag/α-Sn(111) the majority of the deposited Ag atoms are consumed in forming an Ag-Sn alloy. Discrete variational-Xα calculations showed that an onset of such growth modes is closely related to interfacial chemical bonding features for both systems.     

Growth and ordering of Ni(II) diphenylporphyrin monolayers on Ag(111) and Ag/Si(111) studied by STM and LEED

The room temperature self-assembly and ordering of (5,15-diphenylporphyrinato)nickel(II) (NiDPP) on the Ag(111) and Ag/Si(111)-(√3 × √3)R30° surfaces have been investigated using scanning tunnelling microscopy and low-energy electron diffraction. The self-assembled structures and lattice parameters of the NiDPP monolayer are shown to be extremely dependent on the reactivity of the substrate, and probable molecular binding sites are proposed. The NiDPP overlayer on Ag(111) grows from the substrate step edges, which results in a single-domain structure. This close-packed structure has an oblique unit cell and consists of molecular rows. The molecules in adjacent rows are rotated by approximately 17° with respect to each other. In turn, the NiDPP molecules form three equivalent domains on the Ag/Si(111)-(√3 × √3)R30° surface, which follow the three-fold symmetry of the substrate. The molecules adopt one of three equivalent orientations on the surface, acting as nucleation sites for these domains, due to the stronger molecule-substrate interaction compared to the case of the Ag(111). The results are explained in terms of the substrate reactivity and the lattice mismatch between the substrate and the molecular overlayer.     

基于HfO2的阻变存储器中Ag导电细丝方向和浓度的第一性原理研究

采用基于密度泛函理论的第一性原理方法, 研究了基于HfO₂的阻变存储器中Ag 导电细丝浓度以及方向性. 通过计算Ag杂质5种方向模型的分波电荷态密度等势面图、形成能、 迁移势垒和分波电荷态密度最高等势面值, 发现[-111]方向最有利于Ag导电细丝的形成, 这对器件的开启电压、形成电压和开关比有很大影响. 本文基于最佳的[-111]导电细丝方向, 设计了4 种Ag 浓度结构. 计算4种Ag浓度结构的分波电荷态密度等势面图, 得出Ag浓度低于4.00 at.% 时晶胞结构中无导电细丝形成且无阻变现象. 当Ag浓度从4.00 at.%增加到4.95 at.% 时, 晶胞结构中发现有导电细丝形成, 表明Ag浓度高于4.00 at.%时, 晶胞中可以发生阻变现象. 然而, 通过进一步对比计算这两种晶胞结构中Ag的形成能、分波电荷态密度最高等势面值、总态密度与Ag的投影态密度发现, Ag浓度越大, 导电细丝却不稳定, 并且不利于提高阻变存储器的开关比. 本文的研究结果可为改善基于HfO₂的阻变存储器的性能提供一定理论指导.     

Diffusive atom transport along step edges on Ag(1 1 1) at 295 K

The entropy-driven relaxation of a unique, non-equilibrium step edge configuration on the Ag(1 1 1) surface was observed using time-resolved STM imaging at room temperature. Using the Gibbs–Thomson relation, the relaxation process is quantitatively described as diffusive mass transport in terms of a gradient in the chemical potential along the monoatomic step edge. The STM data directly show that mass transport on Ag(1 1 1) is dominated by step edge diffusion at 295 K, and allow an estimate of the corresponding effective energy barrier. We obtain E_eff=0.49±0.05 eV and compare this value with recent results on island diffusion studies.     

Scanning tunneling microscopy study of a Ag monolayer on Cu(111)

The structure of submonolayer Ag deposited on Cu(111) has been examined with scanning tunneling microscopy. The long diffusion length of Ag leads to the formation of large (111)-like islands nucleating from the “downhill” side of Cu step edges. The growth fronts of the Ag islands are mostly straight and lie along the 〈1̄10〉 directions. The Ag overlayer is apparently slightly compressed relative to bulk Ag, and forms a mixture of superstructures rotated slightly relative to the substrate.     

A review of the growth and structures of silicene on Ag(111)

Ag(111) is currently the most often used substrate for growing silicene films. Silicene forms a variety of different phases on the Ag(111) substrate. However, the structures of these phases are still not fully understood so far. In this brief review we summarize the growth condition and resulting silicene phases on Ag(111), and discuss the most plausible structural model and electronic property of individual phases. The existing debates on silicene on Ag(111) system are clarified as mush as possible.     

Simulation of surfactant effect on growth of metal homoexpitaxial Sb－Ag/Ag(111)

A kinetic Monte Carlo simulation is performed in order to study the effect of Sb atoms as a surfactant on the growth of Ag on Ag(111). In our model the repulsive mechanism in which the surfactant Sb atoms repel diffusing Ag adatoms, and the exchange mechanism between Ag and Sb atoms, are considered. Our simulations show that the effects of Sb atoms for Ag/Ag(111) growth system are mainly to increase the chances for Ag atoms to overcome the Ehrlich--Schwoebel barrier both in the interlayer growth and along the edge diffusion. The influence of the coverage of Sb atoms and substrate temperature on the growth of Ag/Sb/Ag(111) is discussed.     

用MAEAM法计算Ag/Ni的界面能

采用改进分析型嵌入原子法计算了Ag(111)//Ni(001)和Ag(001)//Ni(111)扭转界面的能量，结果表明：对Ag(111)//Ni(001)界面，当扭转角等于0°（或30°）时界面能最小，这一择优扭转角取向和Gao等人的实验结果一致；同样，对Ag(001)//Ni（111）界面，当扭转角等于0°（或30°）时界面能最小；从界面能最小化考虑，Ag(001)//Ni(111)扭转界面的择优扭转角也为0°（或30°）. 关键词： Ag/Ni界面 界面能 计算 改进分析型嵌入原子法 近重合位置点阵     

LEED study of the epitaxial growth of the thin film Au(111)/Ag(111) system

An analysis of LEED data from the Ag(111) surface at room temperature and 5° ? Θ ? 16°, φ = 12° has been carried out in order to test three different model potentials for the exchange and correlation part of the one-electron LEED potential. Clean Au(111) surfaces have been grown on Ag(111) at room temperature at a deposition rate of 0.15 Å s^?1. Similar method of calculation and potentials have been employed for the Au overlay er on Ag(111). After the deposition of ? 2.5 monolayers of Au/Ag(111) the growth of Au can proceed in two different ways. One of them matches satisfactorily with the theoretical calculation for the Au(111) overlayer on Ag(111) following the fcc sequence. The other seems to be concerned with the diffusion of Ag during the Au growth. Similar curves have been obtained during the diffusion of Ag through 350 Å of Au(111).     

Scattering of surface states at step edges in nanostripe arrays

Surface states of noble metal surfaces split into Ag-like and Cu-like subbands in stepped Ag/Cu nanostripe arrays. The latter self-assemble by depositing Ag on vicinal Cu(111). Ag-like states scatter at nude step edges in Ag stripes, leading to umklapp bands, quantum size effects, and peak broadening. By contrast, Ag stripe boundaries become transparent to Cu-like states, which display band dispersion as in flat Cu(111). We find a linear relationship between the quantum size shift and peak broadening that applies in a variety of stepped systems, revealing the complex nature of step barrier potentials.     

Selective formation of ultrathin PbSe on Ag(111)

Two-dimensional (2D) semiconductors, such as lead selenide (PbSe), locate at the key position of next-generation devices. However, the ultrathin PbSe is still rarely reported experimentally, particularly on metal substrates. Here, we report the ultrathin PbSe synthesized via sequential molecular beam epitaxy on Ag(111). The scanning tunneling microscopy is used to resolve the atomic structure and confirms the selective formation of ultrathin PbSe through the reaction between Ag₅Se₂ and Pb, as further evidenced by the theoretical calculation. It is also found that the increased accumulation of Pb leads to the improved quality of PbSe with larger and more uniform films. The detailed analysis demonstrates the bilayer structure of synthesized PbSe, which could be deemed to achieve the 2D limit. The differential conductance spectrum reveals a metallic feature of the PbSe film, indicating a certain interaction between PbSe and Ag(111). Moreover, the moiré pattern originated from the lattice mismatch between PbSe and Ag(111) is observed, and this moiré system provides the opportunity for studying physics under periodical modulation and for device applications. Our work illustrates a pathway to selectively synthesize ultrathin PbSe on metal surfaces and suggests a 2D experimental platform to explore PbSe-based opto-electronic and thermoelectric phenomena.