Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor

Mechanisms of leakage current have been investigated in the capacitor consisting of a Ba_0.6Sr_0.4TiO₃ thin film, a Pt top electrode, and a Nb-doped SrTiO₃ (STON) bottom electrode. The leakage current shows asymmetric behavior for different bias voltage. For the Pt electrode negatively biased, the leakage current can be explained by modified Schottky emission mechanism, and the barrier height is obtained as 0.44 eV. For the Pt electrode positively biased, the leakage current shows a space-charge-limited current behavior. The trap in dielectric film is regarded as deep traps, and the density of trapped carrier is estimated as about 3.2×10²³/m³. PACS 77     

Influences of space charge and electrode on the electrical transport through (Ba,Sr)TiO3 thin film capacitors

The combined model of thermionic emission and carrier drift-diffusion is derived to simulate the electrical transport through BST thin film capacitors. In the model the field-dependent permittivity is obtained from the derivative of the polarization distinguished with the traditional characterization. The simulated currents show the hysteresis. The influences of space charges and electrode materials on the current density-applied voltage characteristics have been studied. The simulation results suggest that the current densities can be greatly influenced by the space charges at the cathode interface and the barrier height at the electrode/BST interface. It is expected that this work can provide some useful guidelines to the design and performance improvement of BST thin film capacitors and other BST thin film devices.     

Fabrication of solid-state fuel cell based on DNA film

We have fabricated a fuel cell based on the DNA film (DNAFC) and examined its properties under various humidity conditions at room temperature. The open-circuit voltage of a DNAFC is generated by supplying H₂ gas to the anode. The open-circuit voltage strongly depends on the humidity conditions, and in a DNA film, the optimum condition in which the open-circuit voltage attains a value as high as 0.55 V is achieved under the relative humidity condition of 55%. Furthermore, the cell voltage of the DNAFC decreases with an increase in current density, as observed in fuel cells such as proton exchange membrane fuel cell, solid oxide fuel cell, and several others. These results indicate that DNA film can be used as the fuel cell electrolyte under approximately 55% humidity condition.     

Investigations of electron beam induced conductivity in silicon oxide thin films

Silicon oxide thin film conductivity under electron beam irradiation is studied. An induced current in the films is varied in a range from a few tenths to a few values of the beam current. The dependence of the current normalized to a product of the applied voltage and the beam current on the beam energy is found to have a maximum determined by the film thickness, beam energy, and sign of the applied voltage. For the negative voltage applied to the metal electrode deposited on the film, this maximum is observed at the beam energy, at which the depth generation function is smaller by several tens of nanometers than the film thickness. For the positive voltage on the metal electrode, the maximum is observed at higher beam energies. The obtained result could be qualitatively explained under the assumption that a stationary excess carrier distribution is formed under the electron beam. This distribution is shifted with respect to the generation function due to diffusion and drift of excess carriers. A value of this shift is of about a few tens of nanometers, and its sign indicates that the majority carriers providing the induced conductivity in the films studied are electrons.     

Preparation of the nickel foam/Ni-Ce-Co-O film electrode by thermal decomposition for oxygen evolution reaction

The Ni-Ce-Co-O film on nickel foam was prepared by thermal decomposition of acetates. The electrochemical activity of the film was affected by the temperature of thermal decomposition. Cerium ions introduced into the oxide film could increase the surface area and improve the oxygen evolution reaction (OER) activity of the electrode. Compared with thermal decomposition of nitrates, the OER activity of the film prepared with acetates was higher. When the nickel foam/Ni-Ce-Co-O film electrode prepared with acetates was used as the anode, in 30% KOH solution (88 ± 2 °C) at the current density of 4000 A/m², the cell voltage was 250 mV lower than that of the nickel foam anode. Furthermore, the film electrode exhibited good stability.     

Experimental observation of negative differential characteristic of corona discharge in ultraviolet spectrum

Corona discharge is a self-sustained discharge which appears at electrodes with a small radius curvature in gas insulation. An almost invisible glow occurs just above the inception voltage. Corona phenomenon is mainly used in electro-technological processes to obtain space charge for electrostatic precipitation, separation of different particles, electrostatic liquid or solid coating, neutralization of space charge, etc. All of these processes rely on a strong nonhomogeneous electric field generated by a point – plate electrode system. When the critical value of the applied voltage is reached, the ionization processes near the point electrode start and give rise to the current between two electrodes. If the pointed electrode is positive, it is possible to observe an anomaly of the current – voltage (I-U) characteristic for the point-plate space. It means that while the voltage is raising the current density decreases in a narrow voltage area (2–3 kV). The anomaly was technically named as negative differential conductivity (dI/dU < 0). Unstable current can have a negative influence on electro-technological processes. The anomaly was detected for different shapes and materials of the electrode as well as for various temperatures and distances between electrodes. An oxidation layer, which appears on the metal electrode, also influences the ionization processes near the pointed electrode and causes a decrease of a current. In this paper measuring of the discharge activity in a point – plate electrode system is presented. Ionization of gas atoms and molecules in a high electric field and the following recombination of electrons and positive ions in the corona region can give rise to high-energy photons which produce new electrons in the field of discharge. Corona discharges are detected by DayCor Corona camera which can register UV emission generated by corona in a day light. The experiment was conducted with various shapes of the pointed electrode and distances between the high voltage and the grounded electrode under applied direct voltage with positive and negative polarity.     

Negative corona discharge from a water droplet under the pulsating DC field

Corona discharge from a fine water droplet always involves deformation of the droplet shape or Taylor-cone formation, emission of fine water jets or disruption of droplet. Therefore, corona discharge from a water droplet always manifests complicated aspects. In addition, disruption of Taylor cone simultaneously affects not only discharge current but also motion of water droplet. To confirm corona discharge phenomena from a water droplet protruded from a tip of a metal capillary tube with a diameter of 1 mm, negative corona discharge was investigated by using a water droplet located at a tip of grounded rod electrode facing a ring electrode with positive dc voltage superimposed by ac one. Since the droplet has inherent resonant vibrating frequency defined by the size or volume, the volume of water droplet was adjusted at 20 nL where the corresponding resonant frequency was 500 Hz. The period of the event of successive corona discharge is exactly consistent with resonant frequency defined by the size of the water droplet. As a result, corona pulse trains with a definite duration appeared intermittently corresponding to its resonant vibration. When dc voltage superimposed by ac voltage with resonant frequency of 500 Hz was applied to the water droplet, corona pulse trains appeared at the period corresponding to the frequency. The maximum value of corona current reasonably increased with the applied voltage. Even when the frequency of ac field superimposed on dc field was varied from the resonant frequency, corona pulse trains occur corresponding to not only the superimposed field frequency but also resonant frequency.     

Asymmetry in electrical properties of Al‐doped TiO2 film with respect to bias voltage

The energy diagram of RuO₂/Al‐doped TiO₂/RuO₂ structures was estimated from the capacitance–voltage and leakage current density–voltage curves. The Al‐doping profile in TiO₂ film was varied by changing position of the atomic layer deposition cycle of Al₂O₃ during the atomic layer deposition of 9 nm‐thick TiO₂ film. The interface between the TiO₂ film and the RuO₂ electrode containing Al‐doping layer showed a higher Schottky barrier by 0.1 eV compared with the opposite interface without the doping layer. The evolution of various leakage current profiles upon increasing the bias with opposite polarity could be well explained by the asymmetric Schottky barrier. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Electro-optic spectroscopy of electrochromic processes in tungsten trioxide

The nature of the electrochromic processes in solid-state electrochromic devices (ECD) ITO/a-WO₃/a-SiO₂/Au is investigated by analysing their electro-optical behavior during the current pulses and the linear sweeping of the bias voltage. It is shown that the character of the current-coltage curve of the ECD is determined by passivation, by hydrogen/oxygen evolution on the counter electrode (Au) and by redox reactions on the electrochronic electrode (amorphous WO₃ film: a-WO₃). The light transmittance versus voltage and the high-frequency differential impedance of the active component versus voltage curves are dependent mainly on electrochromic reactions.     

微型平面复合薄膜电爆炸开关的设计和研究

开关技术是影响爆炸箔起爆系统可靠作用、微型化、低能化、集成化的关键技术。电爆炸平面开关是利用强脉冲电流使触发极金属桥箔发生电爆炸,产生高温高压等离子体,使爆炸桥区两侧的电极导通。基于微加工技术,采用Al/CuO复合薄膜材料作为触发电极,设计制造了微型平面复合薄膜电爆炸开关。采用扫描电子显微镜、差示扫描量热法和光谱谱线测温研究了触发极Al/CuO复合薄膜的形貌、反应性和电爆炸等离子体温度,通过放电电流测试研究了开关性能。结果表明,在主回路电压2000 V时,开关输出电流峰值约为1938 A,上升时间390 ns,性能优于仅以铜薄膜为触发电极的电爆炸平面开关。     

金属Pt薄膜上二氧化钒的制备及其电致相变性能研究

通过引入SiO₂氧化物缓冲层, 在金属Pt电极上利用射频磁控溅射技术成功制备出高质量的VO₂薄膜. 详细研究了SiO₂厚度对VO₂薄膜的晶体结构、微观形貌和绝缘体–金属相变(MIT)性能的影响. 结果表明厚度0.2 μm以上的SiO₂缓冲层能够有效 消除VO₂薄膜与金属薄膜之间的巨大应力, 制备出具有明显相变特性的VO₂薄膜. 当缓冲层达到0.7 μm以上, 获得的薄膜具有明显的(011)晶面择优取向, 表面平整致密, 相变前后电阻率变化达到3个数量级以上. 基于该技术制备了Pt-SiO₂/VO₂-Au三明治结构, 通过在垂直膜面方向施加很小的驱动电压, 观察到明显的阶梯电流跳跃, 证实实现了电致绝缘体–金属相变过程. 该薄膜制备工艺简单, 性能稳定, 器件结构灵活可应用于集成式电控功能器件. 关键词： 二氧化钒薄膜 相变特性 电致相变 阈值电压     

强流脉冲离子束辐照对电弧离子镀TiNbN硬质薄膜摩擦磨损性能的影响

 利用分离靶电弧离子镀工艺在高速钢基体上制备TiNbN多元硬质薄膜,利用TEMP-6型强流脉冲离子束（HIPIB）设备,采用含C/H离子、加速电压300 kV、脉冲宽度70 ns、束流密度60 A/cm2的强流脉冲离子束对所制备的薄膜进行辐照处理,研究辐照前后膜层的摩擦磨损性能的变化。实验结果表明：HIPIB辐照以后,薄膜的表面熔化,摩擦系数降低,晶粒细化,膜层的硬度由HK3444提高到HK3820,膜基结合力由59 N提高到65 N。在测试载荷300 N和600 N条件下,薄膜的摩擦磨损性能均有较大改善。     

基于金属掺杂ITO透明导电层的紫外LED制备

为降低ITO薄膜对紫外波段的光吸收,制备低电压高功率的紫外LED,研究了一种基于金属掺杂ITO透明导电层的365 nm紫外LED的制备工艺。利用1 cm厚的石英片生长了不同厚度ITO薄膜以及在ITO上掺杂不同金属的新型薄膜,并研究了在不同的退火条件下这种薄膜的电阻和透过率,分析了掺杂金属ITO薄膜的带隙变化。将这种掺杂的ITO薄膜生长在365 nm外延片上并完成电极生长,制备成14 mil×28 mil的正装LED芯片。利用电致发光（EL）设备对LED光电性能进行测试并对比。实验结果表明:掺Al金属的ITO薄膜能够相对ITO薄膜的带隙提高0.15 eV。在600℃退火后,方块电阻降低6.2 Ω/□,透过率在356 nm处达到90.8%。在120 mA注入电流下,365 nm LED的电压降低0.3 V,功率提高14.7%。ITO薄膜掺金属能够影响薄膜带隙,改变紫光LED光电性能。     

玉米淀粉固态电解质质子\电子杂化突触晶体管

随绿色可持续发展观念的深入人心,研究人员致力于寻找天然有机材料应用于功能性电子器件.淀粉以其低廉的价格、丰富的来源和优异的机械性能进入了科研人员的视野.淀粉可由玉米、马铃薯、甘薯和葛根等含淀粉的物质中提取而得,一般不溶于水,在和水加热至一定温度时,则糊化成胶状溶液.本文通过旋涂法将玉米淀粉的胶状溶液旋涂至氧化铟锡玻璃表面,然后在30?C恒温环境中晾干制备成固态胶合状薄膜.以此薄膜作为固态电解质制备了氧化铟锌突触晶体管,并实现了生物神经突触的双脉冲易化、学习记忆能力、高通滤波等可塑性行为的仿真.本研究以玉米淀粉固态胶合薄膜作为电解质大大降低了氧化物薄膜晶体管固态电解质的成本,且该电解质无毒性、来源丰富,将为人工神经网络的开发提供一种可选择的元件.     

Photoelectrochemical properties of texture‐controlled nanostructured α‐Fe2O3 thin films prepared by AACVD

Nanostructured α‐Fe₂O₃ thin film electrodes were deposited by aerosol‐assisted chemical vapour deposition (AACVD) for photoelectrochemical (PEC) water splitting on conducting glass substrates using 0.1 M methanolic solution of Fe(acac)₃. The XRD analysis confirmed that the films are highly crystalline α‐Fe₂O₃ and free from other iron oxide phases. The highly reproducible electrodes have an optical bandgap of ～2.15 eV and exhibit anodic photocurrent. The current–voltage characterization of the electrodes reveals that the photocurrent density strongly depended on the film morphology and deposition temperature. Scanning electron microscopy (SEM) analysis showed a change in the surface morphology with the change in deposition temperature. The films deposited at 450 °C have nanoporous structures which provide a maximum electrode/electrolyte interface. The maximum photocurrent density of 455 µA/cm² was achieved at 0.25 V vs. Ag/AgCl/3M KCl (～1.23 V vs. RHE) and the incident photon to electron conversion efficiency (IPCE) was 23.6% at 350 nm for the electrode deposited at 450 °C. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

电极材料及偏压极性对氧化物介质击穿行为的影响及机制

忆阻器和能量存储电容器具有相同的三明治结构,然而两个器件需要的操作电压有明显差异,因此在同一个器件中,研究操作电压的影响因素并对操作电压进行调控,实现器件在不同领域的应用是十分必要的一个工作.本文利用反应磁控溅射技术在ITO导电玻璃、Pt/Si基底上生长了多晶ZrO_2和非晶TaO_x薄膜,选用不同金属材料Au, Ag和Al用作上电极构建了多种金属/氧化物介质/金属三明治结构的电容器,研究了器件在不同偏压极性下的击穿强度.结果发现:底电极是ITO的ZrO_2基电容器在负偏压下的击穿电场比Pt电极器件稍大.不管底电极是ITO还是Pt, Ag作为上电极时器件的击穿强度均存在明显的偏压极性依赖性,正偏压下的击穿电场减小了一个数量级;相反,在Al作为上电极的Al/TaO_x/Pt器件中,正向偏压比负向偏压下的击穿电场增加了近2倍.上述器件的不同击穿行为分别可以由氧化物电极和介质界面层间氧的迁移和重排、电化学活性金属电极的溶解迁移和还原以及化学活性金属电极与氧化物界面的氧化还原反应来解释.该实验结果对有不同操作电压要求的器件,如忆阻器和介质储能电容器等在器件设计和操作方面具有指导意义.     

基于NPB的垂直构型有机发光晶体管的光电特性研究

通过将有机空穴阻挡材料BCP薄层插入垂直构型有机发光晶体管器件ITO/NPB（40nm）/Al（30nm）/NPB（20nm）/Alq₃（55nm）/Al中的不同位置对器件光电特性的影响来研究器件漏电流较大的原因以及器件中具体的载流子过程.充分证明了栅极注入的空穴对沟道中的电流有贡献.进而通过用LiF薄层修饰漏极来增强电子的注入并减小漏电流,得到了相对稳定的发光晶体管器件,其发光强度有很大提高并可很好地由栅极电压来进行调控.更换发光材料层容易得到不同颜色的发光晶体管. 关键词： 垂直构型有机发光晶体管（VOLET） 静电感应晶体管（SIT） N')" href="#">NPB （N N′-diphenyl-N')" href="#">N′-diphenyl-N N′-bis（1-naphtyl）-1')" href="#">N′-bis（1-naphtyl）-1 1′-biphenyl-4     

Thin aluminum film improving the cycle performance of positive electrode of lithium ion battery

A novel method was investigated to improve the cycle performance of the spinel LiMn₂O₄. It is widely different from the traditional way of modifying LiMn₂O₄ particle with compounds or metals. In our study, instead of coating LiMn₂O₄ particle itself with compounds or metals, first we covered the current collector with the mixture of LiMn₂O₄ particle, conductive agents and binders, and then deposited an aluminum film onto it by vacuum evaporation technique. Both of the pristine electrode and the modified one were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), and charge-discharge tests. The results of SEM and XRD demonstrate that the aluminum film was formed successfully onto the positive electrode. And the charge-discharge tests show that the capacity retention of pristine electrode and modified one are 63.7% and 93.5% at C/2 rate in the voltage range of 3.5-4.3 V after 200 cycles, respectively. The modified electrode also shows better rate capability in comparison with the pristine one. The improved cycling stability is attributed to the minimizing of Mn dissolution into electrolyte solution and the good electronic conductivity of deposited aluminum film.     

Intrinsic memory characteristic of polycrystalline ZnTe film originating from Mott variable range hopping conduction

The resistive switching characteristics of Au/ZnTe/ITO structure with polycrystalline ZnTe film as resistive switching layer is investigated. Macroscopically, 100 bipolar switching cycles under the direct current (dc) voltages were carried out and the conduction states can retain for several hours. Microscopically, reading and writing operations can be achieved on ZnTe film with Au top electrode replaced by conductive Atomic Force Microscopy (c-AFM) tip. The I–V characteristic in low resistance state (LRS) is linear in the whole range of voltage. The I–V characteristic in high resistance state (HRS) is linear in the low voltage while it obeys Schottky emission in the high voltage, and Schottky barrier height is symmetric in the positive and negative voltage. During linear I–V characteristic voltage range, the electrons transport between adjacent point defects via Mott variable range hopping. The higher hopping distance and higher activation energy in HRS contribute to the higher resistance value in HRS compared with LRS. Impedance spectroscopy in HRS and LRS both behave as a semicircle, which accords with the semiconductor-like characteristic of conductive point defects. Photoluminescence (PL) spectroscopy indicates the decisive role of deep level defects in conduction. This study confirms the intrinsic resistive switching characteristic of ZnTe film and provides a new choice for intrinsic non-oxides material in nonvolatile memory application.     

4H-SiC NMOS电子、质子辐照数值模拟

 分析了高能电子、质子对4H-SiC的损伤机理,建立了4H-SiC NMOS器件物理模型。电子、质子辐照效应模型。应用ISE-TCAD软件进行数值模拟计算,得出在能量为2.5 MeV、注量为5×10¹³ cm^-2的电子辐照及能量为6.5 MeV、注量为2×10¹⁴ cm^-2的质子辐照下,4H-SiC NMOS转移特性曲线和亚阈值漏电流曲线变化的初步规律。数值模拟结果与相同条件下Si NMOS实验结果吻合较好。