Structures and electronic properties of small FeB n (n=1-10) clusters

The geometries, stabilities, electronic properties, and magnetism of FeB(n) clusters up to n=10 are systematically studied with density functional theory. We find that our optimized structures of FeB(2), FeB(3), FeB(4), and FeB(5) clusters are more stable than those proposed in previous literature. The results show that it is favorable for the Fe atom to locate at the surface, not at the center of the cluster, and that FeB(4) and FeB(9) clusters exhibit high stability. For all the FeB(n) clusters studied, we find the charge transfer from Fe to B site and the coexistence of ionic and covalent bonding characteristics. The computed total magnetic moments of the lowest-energy structures oscillate with the cluster size and are quenched at n=4, 6, 8, and 10.     

The structural and electronic properties of In(n)N(n = 1-13) clusters

The structural and electronic properties of In(n)N(n=1-13) clusters have been investigated by density-functional theory with the generalized gradient approximation. The results indicate that the equilibrium structures of In(n)N are linear for n=1,2, planar for n=3-5, and three dimensional for n=6-13. Maximum peaks were observed for In(n)N clusters at n=3,7,9 on the size dependence for second-order energy difference. These imply that these clusters possess relatively higher stability, which is consistent with the case of binding energy per atom. Moreover, the results show that the bonding in small In(n)N clusters has a little ionic character by Mulliken population analysis. The energy gap between the highest occupied and lowest unoccupied molecular orbitals, the vertical ionization potential and electron vertical affinity (VIP and VEA) form an even-odd alternating pattern with increasing cluster size. In general, the VIP tends to lower as the cluster size increases, while the VEA tends to increase as the cluster size increases.     

The structural and electronic properties of Ag-adsorbed (SiO2)n (n=1-7) clusters

Equilibrium geometries, charge distributions, stabilities, and electronic properties of the Ag-adsorbed (SiO(2))(n) (n=1-7) clusters have been investigated using density functional theory with generalized gradient approximation for exchange-correlation functional. The results show that the Ag atom preferably binds to silicon atom with dangling bond in nearly a fixed direction, and the incoming Ag atoms tend to cluster on the existing Ag cluster leading to the formation of Ag islands. The adsorbed Ag atom only causes charge redistributions of the atoms near itself. The effect of the adsorbed Ag atom on the bonding natures and structural features of the silica clusters is minor, attributing to the tendency of stability order of Ag(SiO(2))(n) (n=1-7) clusters in consistent with silica clusters. In addition, the energy gaps between the highest occupied and lowest unoccupied molecular orbitals remarkably decrease compared with the pure (SiO(2))(n) (n=1-7) clusters, eventually approaching the near infrared radiation region. This suggests that these small clusters may be an alternative material which has a similar functionality in treating cancer to the large gold-coated silica nanoshells and the small Au(3)(SiO(2))(3) cluster.     

Density functional study of the structures and electronic properties of nitrogen-doped Ni(n) clusters, n = 1-10

We present a first-principles study of the equilibrium geometries, electronic structure, and related properties (binding energies, ionization potentials, electron affinities, and magnetic moments) of free-standing Ni(n) (n = 1-10) clusters doped with one impurity of N. Calculations have been performed in the framework of the density functional theory, as implemented in the SIESTA code within the generalized gradient approximation to exchange and correlation. We show that, in contrast to the molecular adsorption of N(2), the adsorption of a single N atom can dramatically change the structure of the host Ni(n) cluster, examples of which are Ni(5)N, Ni(7)N, and Ni(10)N, and that noticeable structure relaxations take place otherwise. Doping with a nitrogen impurity increases the binding energy as well as the ionization potential (except for Ni(6)N), which proves that N-doping works in favor of stabilizing the Ni clusters. We also find that the magnetic moments decrease in most cases upon N-doping despite the fact that the average Ni-Ni distance increases. The HUMO-LUMO gap for one spin channel strongly changes as a function of size upon N-doping, in contrast with the HUMO-LUMO gap for the other spin channel. This might have important implication in electronic transport properties through these molecular contacts anchored to source and drain electrodes.     

Fluxional and aromatic behavior in small magic silicon clusters: a full ab initio study of Si(n), Si(n) (1-), Si(n) (2-), and Si(n) (1+), n=6, 10 clusters

The structural, electronic, vibrational, optical, magnetic, and aromatic characteristics of Si(n), Si(n) (1-), Si(n) (2-), and Si(n) (1+), clusters have been calculated very accurately with a variety of high level ab initio techniques. These calculations have been performed with the aim to clarify existing ambiguities in the literature and to bring up the fluxional and aromatic characteristics of these species. The fluxional behavior, according to earlier conjecture of the present author, could be connected to the magic property. In addition such behavior could also explain the existence of conflicting results. The ab initio techniques include quadratic configuration interaction, coupled cluster, and multireference second order perturbation theory, together with density functional theory ("static" and time dependent) with the hybrid B3LYP functional. Various high quality correlation-consistent basis sets, ranging from 2Z up to 5Z quality, were employed. It is demonstrated that Si(6) is fluxional, fluctuating around a symmetric D(4h) structure. Si(10) is also fluxional but to a lesser degree, in contrast to Si(10) (1-) anion which is highly fluxional. For both clusters, in full agreement with Wade's and Lipscomb's rules for deltahedral boranes, the corresponding dianions have higher symmetry (O(h) and D(4d), respectively) and lower energy than the neutral clusters. The aromatic behavior of Si(6) fits better to a mixed conflicting aromaticity picture. This type of aromatic and fluxional behavior has also been observed in stable "magic" carbon clusters as C(6) and carbon fullerenes such as C(20). The present results, which support possible connection of fluxional and magic properties, are in excellent agreement with experimental measurements of ionization energies, electron affinities, and vibrationally resolved photoelectron spectra.     

Geometrical and electronic properties of neutral and charged cesium clusters Cs(n) (n=2-10): a theoretical study

We have investigated the structure and electronic properties of cesium clusters following all electron ab initio theoretical methods based on configuration interaction, second-order Moller-Plesset (MP2) perturbation theory, and density-functional theory. Becke's three-parameter nonlocal hybrid exchange-correlation functional (B3LYP) is found to perform best on the present systems with a split valence 3-21G basis function. We have calculated the optimized geometries of neutral and singly charged cesium clusters having up to ten atoms, their binding energy per atom, ionization potentials (IPs), and adiabatic electron affinity (EA). Geometry optimizations for all the clusters are carried out without imposing any symmetry restriction. The neutral clusters having up to six atoms prefer planar structure and three-dimensional structure is preferred only when the number of atoms in a cluster is more than six. There is a good agreement between the present theoretical and reported experimental IP values for the neutral clusters with cluster size n相似文献   

Trends in structural, electronic and energetic properties of bimetallic vanadium-gold clusters Au(n)V with n = 1-14

A systematic quantum chemical investigation on the electronic, geometric and energetic properties of Au(n)V clusters with n = 1-14 in both neutral and anionic states is performed using BP86/cc-pVTZ-PP calculations. Most clusters having an even number of electrons prefer a high spin state. For odd-electron systems, a quartet state is consistently favoured as the ground state up to Au(8)V. The larger sized Au(10)V, Au(12)V and Au(14)V prefer a doublet state. The clusters prefer 2D geometries up to Au(8)V involving a weak charge transfer. The larger systems bear 3D conformations with a more effective electron transfer from Au to V. The lowest-energy structure of a size Au(n)V is built upon the most stable form of Au(n-1)V. During the growth, V is endohedrally doped in order to maximize its coordination numbers and augment the charge transfer. Energetic properties, including the binding energies, embedding energies and second-order energy differences, show that the presence of a V atom enhances considerably the thermodynamic stability of odd-numbered gold clusters but reduces that of even-numbered systems. The atomic shape has an apparently more important effect on the clusters stability than the electronic structure. Especially, if both atomic shape and electronic condition are satisfied, the resulting cluster becomes particularly stable such as the anion Au(12)V(-), which can thus combine with the cation Au(+) to form a superatomic molecule of the type [Au(12)V]Au. Numerous lower-lying electronic states of these clusters are very close in energy, in such a way that DFT computations cannot clearly establish their ground electronic states. Calculated results demonstrate the existence of structural isomers with comparable energy content for several species including Au(9)V, Au(10)V, Au(13)V and Au(14)V.     

Theoretical study of the adsorption of H on Si n clusters, (n=3-10)

A recently proposed local Fukui function is used to predict the binding site of atomic hydrogen on silicon clusters. To validate the predictions, an extensive search for the more stable SinH (n=3-10) clusters has been done using a modified genetic algorithm. In all cases, the isomer predicted by the Fukui function is found by the search, but it is not always the most stable one. It is discussed that in the cases where the geometrical structure of the bare silicon cluster suffers a considerable change due to the addition of one hydrogen atom, the situation is more complicated and the relaxation effects should be considered.     

Structure and stability of oxygen adsorption on Si(n) (n = 5-10) clusters

The structures, binding energies, and electronic properties of one oxygen atom (O) and two oxygen atoms (2O) adsorption on silicon clusters Si(n) with n ranging from 5 to 10 are studied systematically by ab initio calculations. Twelve stable structures are obtained, two of which are in agreement with those reported in previous literature and the others are new structures that have not been proposed before. Further investigations on the fragmentations of Si(n)O and Si(n)O2 (n = 5-10) clusters indicate that the pathways Si(n)O --> Si(n-1) + SiO and Si(n)O2 --> Si(n-2) + Si2O2 are most favorable from thermodynamic viewpoint. Among the studied silicon oxide clusters, Si8O, Si9O, Si5O2 and Si8O2 correspond to large adsorption energies of silicon clusters with respect to O or 2O, while Si8O, with the smallest dissociation energy, has a tendency to separate into Si7 + SiO. Using the recently developed quasi-atomic minimal-basis-orbital method, we have also calculated the unsaturated valences of the neutral Si(n) clusters. Our calculation results show that the Si atoms which have the largest unsaturated valences are more attractive to O atom. Placing O atom right around the Si atoms with the largest unsaturated valences usually leads to stable structures of the silicon oxide clusters.     

Theoretical study of mixed silicon-lithium clusters Si(n)Li(p)(+) (n=1-6, p=1-2)

Theoretical study on the structures of neutral and singly charged Si(n)Li(p)((+)) (n=1-6, p=1-2) clusters have been carried out in the framework of the density functional theory (DFT) with the B3LYP functional. The structures of the neutral Si(n)Li(p) and cationic Si(n)Li(p)(+) clusters are found to keep the frame of the corresponding Si(n), Li species being adsorbed at the surface. The localization of the lithium cation is not the same one as that of the neutral atom. The Li(+) ion is preferentially located on a Si atom, while the Li atom is preferentially attached at a bridge site. A clear parallelism between the structures of Si(n)Na(p) and those of Si(n)Li(p) appears. The population analysis show that the electronic structure of Si(n)Li(p) can be described as Si(n)(p)(-)+pLi(+) for the small sizes considered. Vertical and adiabatic ionization potentials, adsorption energies, as well as electric dipole moments and static dipolar polarizabilities, are calculated for each considered isomer of neutral species.     

Low-lying isomers of Si(n)(+) and Si(n)(-) (n=31-50) clusters

We carry out a systematic search for the atomic structures of silicon cluster cations and anions in the size range n=31-50 using density functional theory in the generalized-gradient approximation. The obtained lowest-energy candidates feature cagelike structures. We find that the computed binding energies and the dissociation pathways as well as the mobilities of our lowest-energy isomers of the cations are all in good agreement with the measured data from experiments. Furthermore, based on these isomers, we reveal that the steplike feature appearing in the measured high-resolution mobilities can be correlated with the corresponding fullerenes explicitly, which strongly support the notion that endohedral silicon fullerenelike structures are the most favored growth pattern for silicon clusters in the range n=31-50. Our calculation and analysis suggest that the proposed isomers are probably very close to the major-abundance isomers observed in experiments.     

Geometries and stabilities of Ag-doped Si n (n=1-13) clusters: a first-principles study

The structures of AgSi(n) (n=1-13) clusters are investigated using first-principles calculations. Our studies suggest that AgSi(n) clusters with n=7 and 10 are relatively stable isomers and that these clusters prefer to be exohedral rather than endohedral. Moreover, doping leaves the inner core structure of the clusters largely intact. Additionally, the plot of fragmentation energies as a function of silicon atoms shows that the AgSi(n) are favored to dissociate into one Ag atom and Si(n) clusters. Alternative pathways exist for n>7 (except n=11) in which the Ag-Si cluster dissociates into a stable Si(7) and a smaller fragment AgSi(n-7). The AgSi(11) cluster dissociates into a stable Si(10) and a small fragment AgSi. Lastly, our analysis indicates that doping of Ag atom significantly decreases the gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital for n>7.     

Density-functional study of small neutral and cationic bismuth clusters Bi(n) and Bi(n) (+)(n=2-24)

Density-functional theory with scalar-relativistic pseudopotential and a generalized gradient correction is used to calculate the neutral and cationic Bi(n) clusters (2< or =n< or =24), with the aim to elucidate their structural evolution, relative stability, and magnetic property. The structures of neutral Bi clusters are found to be similar to that of other group-V elemental clusters, with the extensively studied sizes of n=4 and 8 having a tetrahedron and wedgelike structure, respectively. Generally, larger Bi clusters consist of a combination of several stable units of Bi(4), Bi(6), and Bi(8), and they have a tendency to form an amorphous structure with the increase of cluster sizes. The curves of second order energy difference exhibit strong odd-even alternations for both neutral and cationic Bi clusters, indicating that even-atom (odd-atom) sizes are relatively stable in neutral clusters (cationic clusters). The calculated magnetic moments are 1micro (B) for odd-atom clusters and zero for even-atom clusters. We propose that the difference in magnetism between experiment and theory can be greatly improved by considering the orbital contribution. The calculated fragmentation behavior agrees well with the experiment, and for each cationic cluster the dissociation into Bi(4) or Bi(7) (+) subclusters confirms the special stability of Bi(4) and Bi(7) (+). Moreover, the bond orders and the gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital show that small Bi clusters would prefer semiconductor characters to metallicity.     

Structures and energetics of Be(n)Si(n) and Be(2n)Si(n) (n = 1-4) clusters

The structures and energies of Be(n)Si(n) and Be(2n)Si(n) (n = 1-4) clusters have been examined in ab initio theoretical electronic structure calculations. Cluster geometries have been established in B3LYP/6-31G(2df) calculations and accurate relative energies determined by the G3XMP2 method. The two atoms readily bond to each other and to other atoms of their own kind. The result is a great variety of low-energy clusters in a variety of structural types.     

Density functional calculation of the structure and electronic properties of Cu(n)O(n) (n = 1-8) clusters

Ab initio simulations and calculations were used to study the structures and stabilities of copper oxide clusters, Cu(n)O(n) (n = 1-8). The lowest energy structures of neutral and charged copper oxide clusters were determined using primarily the B3LYP/LANL2DZ model chemistry. For n ≥ 4, the clusters are nonplanar. Selected electronic properties including atomization energies, ionization energies, electron affinities, and Bader charges were calculated and examined as a function of n.     

Geometries and electronic properties of the tungsten-doped germanium clusters: WGen (n = 1-17)

Geometries associated with relative stabilities, energy gaps, and polarities of W-doped germanium clusters have been investigated systematically by using density functional theory. The threshold size for the endohedral coordination and the critical size of W-encapsulated Gen structures emerge as, respectively, n = 8 and n = 12, while the fullerene-like W@Ge(n) clusters appears at n = 14. The evaluated relative stabilities in term of the calculated fragmentation energies reveal that the fullerene-like W@Ge(14) and W@Ge(16) structures as well as the hexagonal prism WGe(12) have enhanced stabilities over their neighboring clusters. Furthermore, the calculated polarities of the W@Ge(n) reveal that the bicapped tetragonal antiprism WGe(10) is a polar molecule while the hexagonal prism WGe(12) is a nonpolar molecule. Moreover, the recorded natural populations show that the charges transfer from the germanium framework to the W atom. Additionally, the WGe(12) cluster with large highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap, large fragmentation energy, and large binding energy is supposed to be suitable as a building block of assembly cluster material. It should be pointed out that the remarkable features of W@Ge(n) clusters above are distinctly different from those of transition metal (TM) doped Ge(n) (TM = Cu and Ni) clusters, indicating that the growth pattern of the TMGe(n) depends on the kind of doped TM impurity.     

Theoretical study of Al(n) and Al(n)O (n = 2-10) clusters

The stable structures, energies, and electronic properties of neutral, cationic, and anionic clusters of Al(n) (n = 2-10) are studied systematically at the B3LYP/6-311G(2d) level. We find that our optimized structures of Al5(+), Al9(+), Al9(-), Al10, Al10(+), and Al10(-) clusters are more stable than the corresponding ones proposed in previous literature reports. For the studied neutral aluminum clusters, our results show that the stability has an odd/even alternation phenomenon. We also find that the Al3, Al7, Al7(+), and Al7(-) structures are more stable than their neighbors according to their binding energies. For Al7(+) with a special stability, the nucleus-independent chemical shifts and resonance energies are calculated to evaluate its aromaticity. In addition, we present results on hardness, ionization potential, and electron detachment energy. On the basis of the stable structures of the neutral Al(n) (n = 2-10) clusters, the Al(n)O (n = 2-10) clusters are further investigated at the B3LYP/6-311G(2d), and the lowest-energy structures are searched. The structures show that oxygen tends to either be absorbed at the surface of the aluminum clusters or be inserted between Al atoms to form an Al(n-1)OAl motif, of which the Al(n-1) part retains the stable structure of pure aluminum clusters.     

Structural and electronic properties of TaSi(n) (n=1-13) clusters: a relativistic density functional investigation

The TaSi(n) (n=1-13) clusters with doublet, quartet, and sextet spin configurations have been systematically investigated by a relativistic density functional theory with the generalized gradient approximation available in Amsterdam density functional program. The total bonding energies, equilibrium geometries, Mulliken populations as well as Hirshfeld charges of TaSi(n) (n=1-13) clusters are calculated and presented. The emphasis on the stabilities and electronic properties is discussed. The most stable structures of the small TaSi(n) (n=1-6) clusters and the evolutional rule of low-lying geometries of the larger TaSi(n) (n=7-13) clusters are obtained. Theoretical results indicate that the most stable structure of TaSi(n) (n=1-6) clusters keeps the similar framework as the most stable structure of Si(n+1) clusters except for TaSi(3) cluster. The Ta atom in the lowest-energy TaSi(n) (n=1-13) isomers occupies a gradual sinking site, and the site moves from convex, to flatness, and to concave with the number of Si atom varying from 1 to 13. When n=12, the Ta atom in TaSi(12) cluster completely falls into the center of the Si frame, and a cagelike TaSi(12) geometry is formed. Meanwhile, the net Mulliken and Hirsheld populations of the Ta atom in the TaSi(n) (n=1-13) clusters vary from positive to negative, manifesting that the charges in TaSi(n) (n>/=12) clusters transfer from Si atoms to Ta atom. Additionally, the contribution of Si-Si and Si-Ta interactions to the stability of TaSi(n) clusters is briefly discussed. Furthermore, the investigations on atomic averaged binding energies and fragmentation energies show that the TaSi(n) (n=2,3,5,7,10,11,12) clusters have enhanced stabilities. Compared with pure silicon clusters, a universal narrowing of highest occupied molecular orbital-lowest unoccupied molecular orbital gap in TaSi(n) clusters is found.     

Geometries and electronic properties of the neutral and charged rare earth Yb-doped Si(n) (n = 1-6) clusters: a relativistic density functional investigation

The neutral and charged YbSi(n) (n = 1-6) clusters considering different spin configurations have been systematically investigated by using the relativistic density functional theory with generalized gradient approximation. The total bonding energies, equilibrium geometries, Mulliken populations (MP), Hirshfeld charges (HC), fragmentation energies, and highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gaps are calculated and discussed. The optimized geometries indicate that the most stable YbSi(n) (n = 1-6) clusters keep basically the analogous frameworks as the low-lying Si(n)(+1) clusters, while the charged species deviate from their neutral counterparts, and that the doped Yb tends to occupy the substitutional site of the neutral and charged YbSi(n) isomers. The relative stabilities are investigated in terms of the calculated fragmentation energies, exhibiting enhanced stabilities for the remarkably stable neutral and charged YbSi2 and YbSi5 clusters. Furthermore, the calculated MP and HC values show that the charges of the neutral and charged YbSi(n) clusters transfer from the Yb atom to Si(n) atoms and the Yb atom acts as an electron donor, and that the f orbitals of the Yb atom in the neutral and charged YbSi(n) clusters behave as core without involvement in chemical bonding. The calculated HOMO-LUMO gaps indicate that the YbSi2 and YbSi4+ clusters have stronger chemical stabilities. Comparisons of the Yb-doped Si(n) (n = 1-6) with available theoretical results of transition-metal-doped silicon clusters are made. The growth pattern is investigated also.