LaF3:Er,Yb纳米颗粒掺杂有机/无机杂化材料制备光波导放大器及特性研究

采用LaF3:Er,Yb纳米颗粒掺杂有机/无机杂化材料作为有源材料,制备了掩埋条形结构光波导放大器,研究了放大器在室温下的增益特性和波导中的频率上转换现象. 当抽运功率60 mW时,波导中明显可见绿色上转换发光,观测到Er3+从2H9/2,2H11/2,4S3/2,4F9/2到基态4I15/2跃迁分别对应的4个波长分别为405nm, 520nm, 544nm和650nm的发射峰,分析了其产生机理. 当输入信号光0.6mW,抽运功率160 mW时,在1535nm波长处获得1.5 dB/cm的相对增益.     

制备工艺对掺杂NaYF4:Er3+,Yb3+发光纳米晶的聚合物光波导放大器性能的影响

制备了NaYF₄：Er³⁺,Yb³⁺纳米晶,表征了纳米晶的形貌,通过物理掺杂的方式将纳米粒子掺杂到SU-8中作为光波导放大器的芯层材料,优化了波导放大器的尺寸,利用旋涂、刻蚀等工艺,在二氧化硅衬底上制备了光波导放大器。实验中用光漂白法和湿法刻蚀两种方法制备光波导放大器,分别给出了两种方法制备的器件的结构、工艺流程、光场模拟结果,并对两种方法制备的器件的放大特性进行了测试。测试结果表明,当980 nm波长的泵浦光功率为241 mW且1 550 nm波长的信号光功率为0.1 mW时,使用湿法刻蚀法制备的放大器得到2.7 dB的相对增益。当980 nm波长的泵浦光功率为235 mW且1 550 nm波长的信号光功率为0.1 mW时,使用光漂白法制备的放大器得到4.5 dB的相对增益。根据以上测试结果,分析了两种工艺对器件性能的影响。     

LaF3∶Ce3+纳米晶的制备及荧光性质

采用水热法制备了掺杂Ce3+的LaF3的纳米粒子,分别用X射线粉末衍射(XRD)和荧光光谱(PL)对样品的结构和性质进行了表征.XRD的结果表明:LaF3∶Ce3+纳米晶标准卡为JCPDS 73-2192,且颗粒平均尺寸为18.7nm,掺入Ce3+杂质后晶格结构没有变化.荧光光谱结果表明:Ce3+呈现其宽带发射,激发峰在245nm处,发射峰在444nm处,随着Ce3+的摩尔浓度比的增加,样品的荧光强度先增大后减小,且Ce3+的掺杂量为4％(摩尔比)时,纳米粒子的荧光强度最强,但更高的掺杂浓度将导致荧光猝灭.     

LaF3:Yb3+/Tm3+纳米棒的制备与上转换发光

在乙醇-油酸混合体系中,以溶剂热方法成功制备了Yb3+/Tm3+离子双掺杂的LaF3发光纳米棒。XRD表征结果表明所合成的材料为LaF3:Yb3+/Tm3+(JCPDS卡号:72-1435),SEM扫描结果表明LaF3纳米棒的尺寸大约为0.1μm,室温下以980nm红外半导体激光器激发,纳米晶在可见光区(700nm)和近红外区(804nm)有较强上转换发光。通过发光机理的讨论,本文中纳米晶强的近红外和红色上转换发光分别是双光子及三光子反斯托克斯(Anti-stokes)发光。     

水热法制备LaF_3∶Ce,Tb纳米荧光粉及发光性质研究

利用水热法制备了LaF3∶Ce,Tb纳米荧光粉,分别用XRD,TEM和发光光谱等测试手段对粉末的物相、形貌、发光性质进行了研究。XRD和TEM结果表明所得的纳米荧光粉粒度均匀、结晶完好,呈规则的六边形形状,颗粒平均尺寸为30nm,掺入Ce3 和Tb3 ,杂质后晶格结构没有变化。发光光谱的测试表明Ce3 呈现其宽带发射;Tb3 呈现其特征绿色发射,最强峰位于544nm处。Ce3 的掺入有效敏化了Tb3 的发光,通过进一步光谱分析证实了在LaF3∶Ce,Tb体系中存在Ce3 →Tb3 的能量传递过程。当Ce3 和Tb3 掺杂摩尔浓度分别为35mol%和5mol%时具有最强荧光发射。制备的样品无需煅烧即可获得比体相材料高2倍的荧光,也高于优化条件下煅烧样品的荧光。     

水热法制备LaF3:Ce,Tb纳米荧光粉及发光性质研究

利用水热法制备了LaF3∶Ce,Tb纳米荧光粉,分别用XRD,TEM和发光光谱等测试手段对粉末的物相、形貌、发光性质进行了研究.XRD和TEM结果表明:所得的纳米荧光粉粒度均匀、结晶完好,呈规则的六边形形状,颗粒平均尺寸为30 nm,掺人Ce3 和Tb3 ,杂质后晶格结构没有变化.发光光谱的测试表明:Ce3 呈现其宽带发射;Tb3 呈现其特征绿色发射,最强峰位于544 nm处.Ce3 的掺入有效敏化了Tb3 的发光,通过进一步光谱分析证实了在LaF3∶Ce,Tb体系中存在Ce3 →Tb3 的能量传递过程.当Ce3 和Tb3 掺杂摩尔浓度分别为35 mol%和5 mol%时具有最强荧光发射.制备的样品无需煅烧即可获得比体相材料高2倍的荧光,也高于优化条件下煅烧样品的荧光.     

PSⅡ的荧光光谱特性

采用激励光源为82MHz、514.5nm的皮秒荧光光谱装置对PS颗粒、内周天线CP43、CP47三种样品进行研究,通过探测三种样品的荧光总光谱强度随激光功率的变化,测得PS颗粒样品在激光功率为120mW时,荧光强度趋于饱和;CP43在激光功率为73mW时,荧光趋于饱和,但当激光功率为82mW时,荧光强度有下降趋势;而在激光功率为20～96mW的范围内,CP47的荧光强度与激光功率几乎是线性关系.依据它们的荧光量子产额与激光功率的关系,认为CP47中存在较强的激子效应.几种样品的荧光光谱范围分别为700～780nm(PS颗粒);640～780nm(CP43);630～775nm(CP47).CP43和CP47的最大荧光峰分别为680nm和690nm,荧光寿命分别为3.543ns和3.222ns.在514.5nm激光激发下,CP43和CP47中最先受激发的是β-Car分子,发射荧光的是Chla分子,理论计算认为在CP43和CP47中Chla分子发射荧光的效率分别为38.3%和40.6%.     

LaF3纳米晶体中 Sm3+/Eu3+能量传递效应的光谱学特性

采用水热合成法,在较低的温度下制备了分散性,均匀性良好的 LaF3∶ Sm3+,LaF3：Eu3+和LaF3∶Sm3+／Eu3+纳米晶体样品。通过 X 射线衍射(XRD),透射电子显微镜(TEM)和光致发光(PL)等手段,分别对 Sm3+／Eu3+单掺和共掺 LaF3纳米晶体的物相,表面形貌,晶粒尺寸和荧光特性进行了表征。XRD 和 TEM 检测结果显示,所制备的 LaF3纳米晶体呈六方晶体相,平均粒径在40 nm 左右。当采用波长为442 nm 的 He-Cd 连续激光器激发 Sm3+／Eu3+共掺 LaF3样品中的 Sm3+时,在样品发射光谱中观测到了Eu3+的特征荧光发射谱线,实现了 Sm3+向 Eu3+的能量传递。采用光谱学研究方法讨论了能量传递的机理和效率。结果表明,能量传递过程是 Sm3+的4 G5／2激发态与 Eu3+的 5 D 1和5 D 0激发态之间的交叉驰豫所致,并且随着 Eu3+的掺杂浓度的增大,共掺 LaF3∶Sm3+／Eu3+样品的发射谱中的 Eu3+的特征荧光发射强度也随之增强,这说明增加受主 Eu3+的掺杂浓度能够有效地提高 Sm3+→Eu3+能量传递的效率。     

Gd_2O_3:Eu纳米晶的制备及其光谱性质研究

以EDTA为络合剂,聚乙二醇为有机分散剂,用络合溶胶-凝胶法制备出Gd_2O_3:Eu纳米晶。用XRD,SEM,X-射线能量色散谱仪(EDS),荧光分光光度计等分析手段对Gd_2O_3:Eu的纳米晶结构、形貌、组分的均匀性以及发光特性进行了研究。结果表明:EDTA-M凝胶仅在800℃焙烧即可得到颗粒细小、组分均匀、纯立方相的Gd_2O_3:Eu纳米晶,颗粒基本呈球形,粒径为30nm左右。对样品的激发光谱、发射光谱测定表明:Gd_2O_3:Eu纳米晶在269nm光激发下发红光,发射光谱谱峰在611nm,与体材料基本相同;激发光谱中电荷迁移带(CTB)明显红移,从体材料的255nm移至269nm,移动了约14nm;猝灭浓度从体材料的6％提高到8％。     

LaF_3∶Tb~(3+),Ce~(3+)纳米晶的水热合成和荧光特性

采用十六烷基三甲基溴化铵(CTAB)辅助水热法制备了LaF3∶Tb3+,Ce3+纳米晶,研究了pH,Ce3+/Tb3+和反应时间对样品荧光性能的影响。XRD分析表明,样品的主衍射峰与标准卡片(JCPDS 32-0483)的衍射峰相似,属于六方相晶系,其主衍射峰随掺杂稀土离子浓度增大略有偏移,说明掺杂稀土离子与基质晶格中的La3+发生部分的同晶取代。电镜结果显示,样品颗粒是平均晶粒尺寸在20~50nm内且结晶度高的纳米晶体。在样品的激发光谱中,较强的激发峰位于250nm,归属于铈离子能级的4f→5d跃迁。在250nm光激发下,样品均在490nm有较弱的蓝光发射(电偶极跃迁5 D4→7 F6)和543nm有较强的绿光发射(磁偶极跃迁5 D4→7 F5)。随着Ce3+/Tb3+的摩尔比值增大,其荧光强度先增强后减弱,在nCe3+/nTb3+=4时样品的绿光发射最强。溶液pH能影响LaF3∶Tb3+,Ce3+纳米晶的色纯度和发光强度,其中pH为9时样品的绿色纯度最好,而pH为7时其绿光发射最强。增加水热反应时间有助于提高样品的色纯度和增强绿光发射。     

掺杂LaF3∶Er,Yb纳米颗粒的有机无机复合型平面光波导放大器的制备及增益测试

采用油酸修饰的铒镱共掺氟化镧纳米颗粒掺杂的有机-无机杂化材料做为光波导放大器的有源层,同时采用光学性质良好的甲基丙烯酸甲酯-甲基丙烯酸环氧丙酯共聚物制作光波导的上下包层,首先说明了芯层材料不能刻蚀制备传统矩形波导的原因,其次设计了一种倒脊结构的平面光波导放大器,并采用蒸镀铝掩膜、紫外光刻和反应离子刻蚀等工艺,制备出放大器的样品,同时对样品端面进行了化学机械抛光处理,在信号光（1 550 nm）功率为1 mW的条件下,在1.9 cm长度的波导上获得了3.2 dB的相对增益.     

A numerical analysis of gain characteristics of Er-doped Al2O3 waveguide amplifiers

The gain characteristics of erbium-doped Al₂O₃ waveguide amplifiers are investigated by solving numerically rate equations with upconversion effects and propagation equations. We obtained the dependence of gain of erbium-doped Al₂O₃ waveguide amplifiers on the waveguide length, erbium concentration and pump power at different pumping wavelengths (980 and 1480 nm). The performance of amplifiers pumping at 1480 and 980 nm are compared. It is shown that 980 nm pumping has higher gain and higher pumping efficiency. The parameters of waveguide amplifiers have been optimized. A optical gain of 43 dB can be achieved for a optimum waveguide length of 8.25 cm and 5.8 × 10²⁰ cm^–3 Er concentration pumped with 100 mW at 980 nm, that is a gain of 5.2 dB/cm.     

High-gain Al2O3:Nd3+ channel waveguide amplifiers at 880 nm, 1060 nm, and 1330 nm

Neodymium-doped aluminum oxide films with a range of Nd³⁺ concentrations are deposited on silicon wafers by reactive co-sputtering, and single-mode channel waveguides with various lengths are fabricated by reactive ion etching. Photoluminescence at 880, 1060, and 1330 nm from the Nd³⁺ ions with a lifetime of 325 μs is observed. Internal net gain at 845–945 nm, 1064, and 1330 nm is experimentally and theoretically investigated under continuous-wave excitation at 802 nm. Net optical gain of 6.3 dB/cm at 1064 nm and 1.93 dB/cm at 1330 nm is obtained in a 1.4-cm-long waveguide with a Nd³⁺ concentration of 1.68×10²⁰ cm^?3 when launching 45 mW of pump power. In longer waveguides a maximum gain of 14.4 dB and 5.1 dB is obtained at these wavelengths, respectively. Net optical gain is also observed in the range 865–930 nm and a peak gain of 1.57 dB/cm in a short and 3.0 dB in a 4.1-cm-long waveguide is obtained at 880 nm with a Nd³⁺ concentration of 0.65×10²⁰ cm^?3. By use of a rate-equation model, the gain on these three transitions is calculated, and the macroscopic parameter of energy-transfer upconversion as a function of Nd³⁺ concentration is derived. The high internal net gain indicates that Al₂O₃:Nd³⁺ channel waveguide amplifiers are suitable for providing gain in many integrated optical devices.     

Gain evaluation of compact designing on Er/Yb codoped germanate glass channel waveguide

Bent waveguide structures (U- and F-bend) based on UV-sensitive Er³⁺/Yb³⁺ codoped germanate glass substrates have been designed to achieve high-gain C-band amplification. Using simulated-bend method, the optimal radius for curved structure is offered to be 1.90 cm with loss coefficient of 0.0015 dB/cm, as the substrate size is minimally schemed. In the wavelength range of 1528–1559 nm, obvious gain enhancement for the bent structure waveguides is anticipated, while, for the F-bend waveguide, the internal gain at 1533.8 nm wavelength is derived to be 22.55 dB, which is much higher than the value of 14.06 dB in the U-bend waveguide, and over three times higher than that of the straight one, after compensating both the bend loss and the transition loss. The simulation results indicate that the bent structure designing is beneficial in attaining high optical gain in Er³⁺/Yb³⁺ codoped germanate glass substrates, which assures that long-period grating can be applied to implement practical C-band gain-flattened amplification.     

Core-shell LaF<Subscript>3</Subscript>:Er,Yb nanocrystal doped sol–gel materials as waveguide amplifiers

The oleic acid (OA)-modified LaF₃:Er,Yb and LaF₃:Er,Yb–LaF₃ core-shell nanocrystals are synthesized. The lifetime values could be further improved by incorporating core-shell nanocrystals. A kind of sol–gel derived organic–inorganic hybrid material (SGHM) allows for 50 wt.% or even more of both the two nanocrystals in the matrix, and we give the explanation from scattering analysis. It’s precisely because we use the erbium nanocrystals rather than erbium organic complexes, and avoid the undesirable luminescence quenching by Er–Er clustering with a high Er³⁺ concentration. LaF₃:Er,Yb–LaF₃/SGHM transparent films and optical waveguides are also fabricated. The nanocomposite films show strong 1550 nm luminescence intensity under the excitation of 980 nm after heat treatment below 150 °C and the full-width-at-half-maximum is about 51 nm. The loss and optical gain of the waveguide are measured. A relative gain of about 3.5 dB is measured at 1550 nm in a 1.7 cm long waveguide.     

带有多孔二氧化硅间隔层的导模共振光栅实现染料激光器发射增强

导模共振光栅是一种典型的平面波导共振结构,可在光栅表面或波导层内形成较强的局域电场,能增强光与物质的相互作用.本文在导模共振结构的光栅层和基底层之间,引入低折射率的多孔二氧化硅间隔层,显著增强了局域电场与增益介质的接触度.结果表明,引入多孔二氧化硅后,共振产生的电场增强区域上移至激光染料层,增加了激光染料与电场的相互作用,实现了激光出射增强.本文基于时域有限差分法,对结构参数进行分析优化,研究了820 nm共振波长激发下的出射激光特性,得到了连续的激光出射,其能量阈值约为2.5 mJ/cm^2,线宽约为0.3 nm.本文提出的结构实现了对表面局域电场的有效调控,增强了激发光与增益介质的相互作用,不但可应用于激光器,还为其它发光器件的设计提供了参考.     

Modeling of graded index waveguide fabricated by ion exchange on Er3+ doped glass

A general numerical tool,based on thermal diffusion equation and full-vectorial eigen-mode equation,has been presented for the systematic analysis of graded index channel waveguide fabricated by ion exchange on Er3+ doped glass.Finite difference method with full-vectorial formulation(FV-FDM) is applied to solving the full-vectorial modes of graded index channel waveguide for the first time.The coupled difference equations based on magnetic fields in FV-FDM are derived from the Taylor series expansion and accurate formulation of boundary conditions.Hybrid nature of vectorial guided modes for both pump(980 nm) and signal light(1550 nm) are demonstrated by the simulation.Results show that the fabrication parameters of ion exchange,such as channel opening width and time ratio of second step to first step in ion exchange,have large influence on the properties of waveguide.By optimizing the fabrication parameters,maintenance of monomode for signal light and improvement of the gain dynamics can be achieved in Er3+ doped waveguide amplifier(EDWA) fabricated by ion exchange technique.This theoretical model is significant for the design and fabrication of EDWA with ion exchange technique.Furthermore,a single polarization EDWA,which operates at wavelength from 1528 nm to 1541 nm for HE polarization,is numerically designed.