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1.
The magnetization M(H) in the superconducting state, dc magnetic susceptibility χ(T) in the normal state, and specific heat C(T) near the superconducting transition temperature T c have been measured for a series of fine-crystalline YBa2Cu3O y samples having nearly optimum values of y = 6.93 ± 0.3 and T c = (91.5 ± 0.5) K. The samples differ only in the degree of nanoscale structural inhomogeneity. The characteristic parameters of superconductors (the London penetration depth and the Ginzburg–Landau parameter) and the thermodynamic critical field H c are determined by the analysis of the magnetization curves M(H). It is found that the increase in the degree of nanoscale structural inhomogeneity leads to an increase in the characteristic parameters of superconductors and a decrease in H c(T) and the jump of the specific heat ΔC/T c. It is shown that the changes in the physical characteristics are caused by the suppression of the density of states near the Fermi level. The pseudogap is estimated by analyzing χ(T). It is found that the nanoscale structural inhomogeneity significantly enhances and probably even creates the pseudogap regime in the optimally doped high-T c superconductors.  相似文献   

2.
The dependences of the path of leading dislocations in indentation rosette rays on the load, the loading time, and the indentation temperature in the range 260 < T ≤ 373 K were studied for C60 fullerite crystals. The dislocation mobility parameters are estimated: the exponent m characterizing the stress dependence of the dislocation velocity depends on the structural perfection of the crystal and ranges from 2.3 to 24.5, the activation energy for dislocation motion ΔH 0 ? (0.4–0.5) eV, and the velocity of leading dislocations in indentation rosette rays v l ? 10?5?10?4 cm/s. The data from micro-and macromechanical experiments are shown to agree with each other. The dislocation mobility is assumed to be controlled by the dislocation interaction with local barriers.  相似文献   

3.
Magnetic, elastic, magnetoelastic, transport, and magnetotransport properties of the Eu0.55Sr0.45MnO3 ceramics have been studied. A break was detected in the temperature dependence of electrical resistivity ρ(T) near the temperature of the magnetic phase transformation (41 K), with the material remaining an insulator down to the lowest measurement temperature reached (ρ=106 Ω cm at 4.2 K). In the interval 4.2≤T≤50 K, the isotherms of the magnetization, volume magnetostriction, and ρ were observed to undergo jumps at the critical field HC1, which decreases with increasing T. For 50≤T≤120 K, the jumps in the above curves persist, but the pattern of the curves changes and HC1 grows with increasing T. The magnetoresistance Δρ/ρ = (ρ H H=0)/ρ H is positive for H<HC1 and passes through a maximum at 41 K, where Δρ/ρ = 6%. For H>HC1, the magnetoresistance is negative, passes through a minimum near 41 K, and reaches a colossal value of 3×105 % at H=45 kOe. The volume magnetostriction is negative and attains a giant value of 4.5×10?4atH=45 kOe. The observed properties are assigned to the existence of three phases in Eu0.55Sr0.45MnO3, namely, a ferromagnetic (FM) phase, in which carriers are concentrated because of the gain in s-d exchange energy, and two antiferromagnetic (AFM) phases of the A and CE types. Their fractional volumes at low temperatures were estimated to be as follows: ~3% of the sample volume is occupied by the FM phase; ~67%, by the CE-type AFM phase; and ~30%, by the A-type AFM phase.  相似文献   

4.
Manganites of the Sm1?xSrxMnO3 system (x=0.33, 0.4, and 0.45) possess giant negative values of the magnetoresistance Δρ/ρ and the volume magnetostriction ω near the Curie temperature TC. In the compound with x=0.33, the isotherms of Δρ/ρ, ω, and magnetization σ exhibit smooth variation and do not reach saturation up to maximum magnetic field strengths (120 kOe) studied (according to the neutron diffraction data, this substance comprises a ferromagnetic (FM) matrix with distributed clusters of a layered antiferromagnetic (AFM) structure of the A type). In the compounds with x=0.4 and 0.45 containing, besides the FM matrix and A-type AFM phase, a charge-ordered AFM phase of the CE type (thermally stable to higher temperatures as compared to the A-type AFM and the FM phases), the same isotherms measured at TTC show a jumplike increase in the interval of field strengths between Hc1 and Hc2 and then reach saturation. In the interval Hc1 > H > Hc2, the σ, ω, and Δρ/ρ values exhibit a metastable behavior. At temperatures above TC, the anisotropic magnetostriction changes sign, which is indicative of rearrangements in the crystal structure. The giant values of ω and Δρ/ρ observed at TTC for all compounds, together with excess (relative to the linear) thermal expansion and a maximum on the ρ(T) curve, are explained by the phenomenon of electron phase separation caused by a strong s-d exchange. The giant values of magnetoresistance and volume magnetostriction (with ω reaching ~10?3) are attributed to an increase in the volume of the FM phase induced by the applied magnetic field. In the compound with x=0.33, this increase proceeds smoothly as the FM phase grows through the FM layers in the A-type AFM phase. In the compounds with x=0.4 and 0.45, the FM phase volume increases at the expense of the charge-ordered CE-type AFM structure (in which spins of the neighboring manganese ions possess an AFM order). The jumps observed on the σ(H) curves, whereby the magnetization σ reaches ~70% of the value at T=1.5 K, are indicative of a threshold character of the charge-ordered phase transition to the FM state. Thus, the giant values of ω and Δρ/ρ are inherent in the FM state, appearing as a result of the magnetic-field-induced transition of the charge-ordered phase to the FM state, rather than being caused by melting of this phase.  相似文献   

5.
The voltage-current characteristics (VCC) of Sm1?xSrx MnO3 samples with x=0.425 and x=0.450 were experimentally studied at a temperature of 77 K in pulsed and constant electric (E) and magnetic (H) fields up to 10 kOe for the HE and HE orientations. N-shaped VCCs and high-frequency (up to 3 MHz) current oscillations were observed. It was found that the effect of colossal magnetoresistance had a threshold character and was smoothly reduced to zero with E→0.  相似文献   

6.
The Zeeman effect, magnetization M(H), and differential magnetic susceptibility dM/dH of ErVO4 crystals in a pulsed magnetic field have been experimentally and theoretically studied. In magnetic fields H ∥ [001] and H ∥ [100], the energy levels of Er3+ ions exhibit mutual approach and crossing (the crossover effect), which results in the peaks in dM/dH and the jumps in M(H) curves at low temperatures. The anomalies in the magnetic properties related to the crossover in ErVO4 for H ∥ [001] are highly sensitive to the electronic structure of Er3+ ion, which allows this effect to be used for refining the crystal field parameters. The influence of the temperature, field misorientation from the symmetry axis, parameters of pair interactions, and other factors on the magnitude and character of magnetic anomalies in ErVO4 crystals is considered.  相似文献   

7.
The structure and mechanical properties of nanostructured thin films based on carbides, nitrides, and borides of transition metals are described. The mechanisms of localized deformation of the films during indentation are compared. It is shown that the tendency of a material to form shear bands during deformation can be predicted using the parameter H3/E2, which describes the resistance of the material to plastic deformation. The columnar structure of the films is found to play an important role during deformation, which proceeds via slipping of columnar structural elements along the direction of an applied load.  相似文献   

8.
Let H(?)=?? 2d2/dx 2+V(x) be a Schrödinger operator on the real line, W(x) be a bounded observable depending only on the coordinate and k be a fixed integer. Suppose that an energy level E intersects the potential V(x) in exactly two turning points and lies below V =lim?inf?|x|→∞ V(x). We consider the semiclassical limit n→∞, ?=? n →0 and E n =E where E n is the nth eigenenergy of H(?). An asymptotic formula for 〈n|W(x)|n+k〉, the non-diagonal matrix elements of W(x) in the eigenbasis of H(?), has been known in the theoretical physics for a long time. Here it is proved in a mathematically rigorous manner.  相似文献   

9.
Exact solution for the electromagnetic field densities E and H of a dipole of uniformly accelerated point-charges with identical masses is discussed. It is shown that, for any fixed time t and a large distance R between the center of the dipole and the fieldpoint, |E| ~ R ?4, |H| ~ R ?5, while for large c|t| ~ R, |E| ~ |H| ~1/R as in spherical electromagnetic waves. Nevertheless, any irreversible radiation of electromagnetic waves is absent since the wave zone does not exist.  相似文献   

10.
Spectra of secondary particles (γ-rays) in γ-families detected in the X-ray chambers in the Pamirs (H = 600 g cm?2) have been analyzed. These γ-ray spectra show a bend at the energy E* γ ≈ (ΣE γ )min, where (ΣE γ )min is the lowest total energy of γ-rays in the families above which γ-families were selected. The bend is not related to the knee in the spectrum of primary particles; it is due to the use of the ΣE γ selection criterion. The E γ spectrum slope is sensitive to the spectrum of the primary cosmic rays in the region E γ ≥ (ΣE γ )min.  相似文献   

11.
The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu2O2 phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T0/T)1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.  相似文献   

12.
The electron spin resonance has been measured for the first time both in the paramagnetic phase of the metallic GdB6 antiferromagnet (TN = 15.5K) and in the antiferromagnetic state (T < TN). In the paramagnetic phase below T* ~ 70 K, the material is found to exhibit a pronounced increase in the resonance linewidth and a shift in the g-factor, which is proportional to the linewidth Δg(T) ~ ΔH(T). Such behavior is not characteristic of antiferromagnetic metals and seems to be due to the effects related to displacements of Gd3+ ions from the centrosymmetric positions in the boron cage. The transition to the antiferromagnetic phase is accompanied by an abrupt change in the position of resonance (from μ0H0 ≈ 1.9 T to μ0H0 ≈ 3.9 T at ν = 60 GHz), after which a smooth evolution of the spectrum occurs, resulting eventually in the formation of the spectrum consisting of four resonance lines. The magnetic field dependence of the frequency of the resonant modes ω0(H0) obtained in the range of 28–69 GHz is well interpreted within the model of ESR in an antiferromagnet with the easy anisotropy axis ω/γ = (H 0 2 +2HAHE)1/2, where HE is the exchange field and HA is the anisotropy field. This provides an estimate for the anisotropy field, HA ≈ 800 Oe. This value can result from the dipole?dipole interaction related to the mutual displacement of Gd3+ ions, which occurs at the antiferromagnetic transition.  相似文献   

13.
The photoelectric properties of TlGa1?xYbxS2 (x = 0, 0.01) single crystals are investigated. It is established that partial substitution of ytterbium for gallium leads to (i) an increase in the electrical resistivity of the samples, (ii) a shift in the maximum of the intrinsic photocurrent toward the long-wavelength range of the spectrum, (iii) a considerable broadening of the spectral sensitivity range, and (iv) an increase in the amplitude of the extrinsic photocurrent. Analysis of the x-ray dosimetric characteristics of the TlGa 1?xYbxS2 single crystals demonstrates that, upon partial substitution of ytterbium for gallium in TlGaS2, the x-ray sensitivity coefficient increases significantly and the current-dose characteristics ΔIE, 0 ~ Eα tend to linearity (α = 1) at low dose rates (E, R/min) of soft x rays. At high dose rates of hard x rays, α tends to 0.5 for both undoped and ytterbium-doped TlGaS2 single crystals.  相似文献   

14.
Ginzburg-Landau (GL) theory is used to study surface superconductivity for UPt3 for various order parameter symmetries (OPS), andH c3 is found for all principal directions of the surface normal\(\hat n\) and the field [1]. Assuming specular reflection, and allowing for reorientation of the antiferromagnetic symmetry breaking field in the models withE 1g ,E 2g ,E 1u , orE 2u symmetry, the experiments of Keller et al. [2] with\(\hat n = \hat a\) can be qualitatively explained for all OPS except possiblyA 1u B 1u . The implied GL parameters then predict qualitatively different and OPS dependent behavior for\(\hat n = \hat a^* \) and\(\hat n = \hat c\). Study ofH c3 for these surfaces would give strong clues about the OPS of UPt3.  相似文献   

15.
We calculate the Komar energy E for a noncommutative inspired Schwarzschild black hole. A deformation from the conventional identity E = 2ST H is found in the next to leading order computation in the noncommutative parameter θ (i.e. \({\mathcal{O}(\sqrt{\theta}e^{-M^2/\theta})}\)) which is also consistent with the fact that the area law now breaks down. This deformation yields a nonvanishing Komar energy at the extremal point T H  = 0 of these black holes. We then work out the Smarr formula, clearly elaborating the differences from the standard result M = 2ST H , where the mass (M) of the black hole is identified with the asymptotic limit of the Komar energy. Similar conclusions are also shown to hold for a deSitter–Schwarzschild geometry.  相似文献   

16.
Characteristics of a prototype of the electromagnetic calorimeter based on PbWO4 scintillation crystals were studied. Measurements were performed using the electron beam of the DESY synchrotron in the range of 1–6 GeV. The energy resolution of the prototype was σ/E = 2.4%/E ⊕ 3.9% / √E ⊕ 1.2%.  相似文献   

17.
Thin films Cu2ZnSnS4 (up to 0.9 μm thick) with p-type conductivity and band gap Eg = 1.54 eV have been prepared by the spray pyrolysis of 0.1 M aqueous solutions of the salts CuCl2 · 2H2O, ZnCl2 · 2H2O, SnCl4 · 5H2O, and (NH2)2CS at a temperature TS = 290°C. The electrophysical properties of the films have been analyzed using the model for polycrystalline materials with electrically active grain boundaries. The energy and geometric parameters of the grain boundaries have been determined as follows: the height of the barriers is Eb ≈ 0.045–0.048 eV, and the thickness of the depletion region is δ ≈ 3.25 nm. The effective concentrations of charge carriers p0 = 3.16 × 1018 cm–3 and their mobilities in crystallites μp = 85 cm2/(V s) have been found using the technique for determining the kinetic parameters from the absorption spectra of thin films at a photon energy hν ≈ Eg. The density of states at grain boundaries Nt = 9.57 × 1011 cm–2 has been estimated.  相似文献   

18.
The time-of-flight technique is used to measure the ratios R(E, E n )=N(E, E n )/NCf(E) of the normalized (to unity) spectra N(E, E n ) of neutrons accompanying the neutron-induced fission of 238U at primary-neutron energies of E n =6.0 and 7.0 MeV to the spectrum NCf(E) neutrons from the spontaneous fission of 252Cf. These experimental data and the results of their analysis are discussed together with data that were previously obtained for the neutron-induced fission of 238U at the primary energies of E n =2.9, 5.0, 13.2, 14.7, 16.0, and 17.7 MeV.  相似文献   

19.
The characteristic electron-energy-loss (EEL) spectra of the pure surface of metallic yttrium and of this surface in the initial stages of oxidation are recorded. The energy of the primary electron beam E p is 200–1000 eV. The spectra exhibit high-and low-frequency peaks. During oxidation, the positions of the basic peaks in the EEL spectra are significantly shifted. The peaks corresponding to the bulk energy loss shift toward higher energies upon oxidation. The peak corresponding to the low-frequency surface oscillations also shifts, but toward lower energies, and its intensity monotonically decreases with increasing oxygen dose. The differences between the spectra recorded at different E p are explained as resulting from an increase in the electron escape depth with E p .  相似文献   

20.
We present a detailed investigation of the specific heat of Ca3(Ru1-xMx)2O7 (M = Ti, Fe, Mn) single crystals. Depending on the dopant and doping level, three distinct regions are present: a quasitwo-dimensional metallic state with antiferromagnetic (AFM) order formed by ferromagnetic bilayers (AFM-b), a Mott insulating state with G-type AFM order (G-AFM), and a localized state with a mixed AFM-b and G-AFM phase. Our specific heat data provide deep insights into the Mott transitions induced by Ti and Mn doping. We observed not only an anomalous large mass enhancement, but also an additional term in the specific heat, i.e., CT2, in the localized region. The CT2 term is most likely due to long-wavelength excitations with both FM and AFM components. A decrease in the Debye temperature is observed in the G-type AFM region, indicating lattice softening associated with the Mott transition.  相似文献   

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