Amplified Spontaneous Emision of K_2 Yellow Band Excimer and Its Gain Measurement by e-beam-pumping

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Research on Injection-seeded β-BaB_2O_4 Optical Parameteric Oscillator

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Highly efficient optical parametric chirped-pulse amplification based on BiB3O6 and β-BaB2O4 crystals at low pump intensity

We report a very high signal gain of 1.13 × 10⁷ at a low pump intensity of 260 MW/cm² in a two-stage optical parametric chirped-pulse amplifier (OPCPA), which is used as a pre-amplifier for a short-pulse front-end Nd: glass high-energy laser system. A signal energy of 0.17 nJ was amplified to 2 mJ with a central wavelength of 1053 nm and a repetition rate of 10 Hz using the OPCPA with a 15 mm-long BBO crystal at optical parametric amplifier (OPA) stage 1 and a 12 mm-long BiBO crystal at OPA stage 2.     

First-principles calculations on the electronic and vibrational properties of β-V2O5

Using a first-principles approach based on density functional theory,this paper studies the electronic and dynamical properties of β-V2O5.A smaller band gap and much wider split-off bands have been observed in comparison with αV2O5.The Ramanand infrared-active modes at the Γ point of the Brillouin zone are evaluated with LO/TO splitting,where the symbol denotes the longitudinal and transverse optical model.The nonresonant Raman spectrum of a βV2O5 powder sample is also computed,providing benchmark theoretical results for the assignment of the experimental spectrum.The computed spectrum agrees with the available experimental data very well.This calculation helps to gain a better understanding of the transition from αto β-V2O5.     

Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

Synthesis and characterization of β-Ga2O3 nanorods

A novel method was applied to prepare β-Ga₂O₃ nanorods. In this method, β-Ga₂O₃ nanorods have been successfully synthesized on Si(1 1 1) substrates through annealing sputtered Ga₂O₃/Mo films under flowing ammonia at 950 °C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectroscopy (FTIR). The results show that the nanorod is single-crystalline Ga₂O₃ with monoclinic structure. The β-Ga₂O₃ nanorods are straight and smooth with diameters in the range of 200-300 nm and lengths typically up to several micrometers. The growth process of the β-Ga₂O₃ nanorods is probably dominated by conventional vapor-solid (VS) mechanism.     

Synthesis and characterization of β-Ga2O3 nanostructures grown on GaAs substrates

β-Ga₂O₃ nanostructures including nanowires, nanoribbons and nanosheets were synthesized via thermal annealing of gold coated GaAs substrates in N₂ ambient. GaAs substrates with different dopants were taken as the starting material to study the effect of doping on the growth and photoluminescence properties of β-Ga₂O₃ nanostructures. The nanostructures were investigated by Grazing Incident X-ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy, Energy Dispersive X-ray Spectroscopy, room temperature photoluminescence and optical absorbance. The selected area electron diffraction and High resolution-TEM observations suggest that both nanowires and nanobelts are single crystalline. Different growth directions were observed for nanowires and nanoribbons, indicating the different growth patterns of these nanostructures. The PL spectra of β-Ga₂O₃ nanostructures exhibit a strong UV-blue emission band centered at 410 nm, 415 nm and 450 nm for differently doped GaAs substrates respectively. A weak red luminescence peak at 710 nm was also observed in all the samples. The optical absorbance spectrum showed intense absorption features in the UV spectral region. The growth and luminescence mechanism in β-Ga₂O₃ nanostructures are also discussed.     

Structure and photoluminescence of β-Ga2O3:Eu nanofibers prepared by electrospinning

Eu³⁺-doped β-Ga₂O₃ nanofibers were fabricated by electrospinning. The influence of Eu³⁺ concentration on the photoluminescence properties of the obtained nanofibers was investigated. The morphology and structure of β-Ga₂O₃:Eu³⁺ were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and Raman spectra. The diameter of the Eu³⁺-doped β-Ga₂O₃ nanofibers was in the range of 180-300 nm. When the β-Ga₂O₃:Eu³⁺ nanofibers were excited by 325 nm wavelength, the main emission peak of the samples was 620 nm (⁵D₀→⁷F₂), which corresponded to a typical red emission (⁵D₀→⁷F_j (j = 1, 2, 3, 4) intra-4f transitions of Eu³⁺ ions). In addition, the concentration quench effect and energy transfer mechanism in β-Ga₂O₃:Eu³⁺ were also discussed.     

Effects of K4CuNb8O23 on phase structure and electrical properties of K0.5Na0.5NbO3–LiSbO3 lead-free piezoceramics

Dense K₄CuNb₈O₂₃ (KCN) modified 0.948K_0.5Na_0.5NbO₃–0.052LiSbO₃ (KNNLS) ceramics were prepared by conventional solid state reaction method. The effect of addition of K₄CuNb₈O₂₃ liquid phase sintering aid on the phase structure and electrical properties of ceramics was studied. Results showed that K₄CuNb₈O₂₃ induced a perovskite structure transition from coexistence of orthorhombic and tetragonal phases to orthorhombic symmetry. The addition of K₄CuNb₈O₂₃ promoted the sintering of KNNLS ceramics. In particular, the K₄CuNb₈O₂₃ addition to the KNNLS greatly improved the mechanical quality factor Q_m value. The ceramics with x=0.8 sintered at 1090 °C possess the optimum properties (Q_m=192, d₃₃=135 pC/N, tan δ=0.024 and k_p=0.357). These results indicate that the ceramic is a promising candidate for lead-free high-power piezoelectric devices, such as piezoelectric actuators, transformers and filter materials.     

Optical and electrical properties of Sb-doped β-Ga2O3 crystals grown by OFZ method

Sb-doped β-Ga₂O₃ crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of high quality.Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice.The carrier concentration of the Sb-doped single crystals increased from 9.55 × 10¹⁶ to 8.10 × 10¹⁸ cm^-3,the electronic mobility depicted a dec...     

Structures and magnetic anisotropy of β-Mn2V2O7 crystals synthesized by the molten salt method

β-Mn2V2O7 crystals with strip shape are successfully prepared by the molten salt method in a closed crucible,and are characterized by x-ray diffraction (XRD),scanning electron microscopy (SEM),transmission electron microscopy (TEM),selected area of electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM).The results indicate that the sample is of the β-Mn2V2O7 crystal with monoclinic symmetry,level natural cleavage facets and directional growth.Magnetic properties are measured by vibration sample magnetometry (VSM) at room temperature,and the magnetic hysteresis loop indicates that the β-Mn2V2O7 has anti-ferromagnetic properties with low coercive force and remnant magnetization.The magnetic measurement results in different directions exhibit that the β-Mn2V2O7 has magnetic anisotropy,which is due to the fact that the magnetic interaction energy of the β-Mn2V2O7 is lowest only when the electron configuration is in a certain direction.     

Effects of N-doping concentration on the electronic structure and optical properties of N-doped β-Ga2O3

The electronic structures and the optical properties of N-doped β-Ga2O3 with different N-doping concentrations are studied using the first-principles method.We find that the N substituting O（1） atom is the most stable structure for the smallest formation energy.After N-doping,the charge density distribution significantly changes,and the acceptor impurity level is introduced above the valence band and intersects with the Fermi level.The impurity absorption edges appear to shift toward longer wavelengths with an increase in N-doping concentration.The complex refractive index shows metallic characteristics in the N-doped β-Ga2O3.     

低温相偏硼酸钡(β-BaB2O4)晶体倍频系数的计算

本文从“离子基团理论”出发,并考虑A位离子晶格电场对(B₃O₆)^3-环的影响,采用CNDO/S近似计算了(B₃O₆)^3-基团的分子轨道,进而求得低温相偏硼酸钡(β-BaB₂O₄)晶体的倍频系数。计算结果与实验值符合,由此进一步证实了这一论点:β-BaB₂O₄晶体的倍频系数主要来自(B关键词：     

β-BaB2O4晶体中367.3—379.4nm的和频产生

用调谐的Rh·6G染料激光与Q-YAG激光在β-BaB₂O₄(BBO)晶体中和频,已获得367.3—379.4nm范围内连续可调谐输出,和频输出能量为2mJ,转换效率为12%,还讨论了非共线传播对和频输出能量及转换效率的影响。 关键词：     

Synthesis and properties of Au-Fe3O4 and Ag-Fe3O4 heterodimeric nanoparticles

Monodisperse Au-Fe 3 O 4 heterodimeric nanoparticles (NPs) were prepared by injecting precursors into a hot reaction solution.The size of Au and Fe 3 O 4 particles can be controlled by changing the injection temperature.UV-Vis spectra show that the surface plasma resonance band of Au-Fe 3 O 4 heterodimeric NPs was evidently red-shifted compared with the resonance band of Au NPs of similar size.The as-prepared heterodimeric Au-Fe 3 O 4 NPs exhibited superparamagnetic properties at room temperature.The Ag-Fe 3 O 4 heterodimeric NPs were also prepared by this synthetic method simply using AgNO 3 as precursor instead of HAuCl 4.It is indicated that the reported method can be readily extended to the synthesis of other noble metal conjugated heterodimeric NPs.     

A facile and flexible process of β-cyclodextrin grafted on Fe3O4 magnetic nanoparticles and host-guest inclusion studies

In this study, a kind of novel surface-functionalized magnetic nanoparticles was fabricated by the Fe₃O₄ nanoparticles surface modification with mono-6-deoxy-6-(p-tolylsulfonyl)-cyclodextrin (6-TsO-β-CD), which were employed to interact with uric acid and their behavior was investigated by electrochemical methods. The architecture has been characterized by powder X-ray diffraction (XRD), Fourier transform infrared spectra (FT-IR), transmission electron microscopy (TEM), and thermogravimetric analysis (TGA), which confirmed that cyclodextrins have been effectively functionalized on the surface of Fe₃O₄ nanoparticles. The analyses of vibration sample magnetometer (VSM) verified that the nanoparticles owned good magnetic property. The grafted β-cyclodextrin on the Fe3O4 nanoparticles contributed to as a modified electrode for detecting uric acid with cyclic voltammograms. Electrochemical results revealed that the new materials could exhibit excellent molecules recognition ability and show high electrochemical response. The new nanoparticles simultaneously had unique properties of magnetic nanoparticles and cyclodextrins through combining their individual distinct advantages.     

Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

A transparent electrode of Si doped β-Ga₂O₃ films for solar cells, flat panel displays and other devices, which consists of chemically abundant and ecological friendly elements of gallium and oxygen, was grown on silicon substrates by RF magnetron sputtering using sintered Ga₂O₃ and Si target. The Si composition in the β-Ga₂O₃ film is determined by electron dispersive X-ray spectroscopy. The X-ray photoelectron spectroscopy peak ratio of oxygen over gallium decreases with increasing Si content. It is concluded that Si substitutes for the Ga sites in the β-Ga₂O₃ film.     

Electrical properties and emission mechanisms of Zn-doped β-Ga2O3 films

We study the electrical properties and emission mechanisms of Zn-doped β-Ga₂O₃ film grown by pulsed laser deposition through Hall effect and cathodoluminescence which consist of ultraviolet luminescence (UV), blue luminescence (BL) and green luminescence (GL) bands. The Hall effect measurements indicate that the carrier concentration increases from 7.16×10¹¹ to 6.35×10¹² cm⁻³ with increasing a nominal Zn content from 3 to 7 at%. The UV band at 272 nm is not attributed to Zn dopants and ascribed as radiative electron transition from conduction band to a self-trapped hole while the BL band is attributable to defect level related to Zn dopant. The BL band has two emission peaks at 415 and 455 nm, which are ascribed to the radiative electron transition from oxygen vacancy (V_O) to valence band and recombination of a donor–acceptor pair (DAP) between V_O donor and Zn on Ga site (Zn_Ga) acceptor, respectively. The GL band is attributed to the phonon replicas’ emission of the DAP. The acceptor level of Zn_Ga is estimated to be 0.26 eV above the valence band maximum. The transmittance and absorption spectra prove that the Zn-doped β-Ga₂O₃ film is a dominantly direct bandgap material. The results of Hall and cathodoluminescence measurements imply that the Zn dopant in β-Ga₂O₃ film will form an acceptor Zn_Ga to produce p-type conductivity.     

γ射线辐照诱导Bi:α-BaB2O4单晶近红外宽带发光的研究

用提拉法技术生长出了掺Bi的α-BaB₂O₄单晶并经过γ射线辐照.测定了样品在室温下的吸收光谱、发射光谱及荧光衰减曲线.在808 nm波长光的激发下,经γ射线辐照后的α-BaB₂O₄单晶中发现了中心波长为1139 nm、半高宽为113 nm的近红外宽带发光现象.讨论了辐照条件和退火处理对Bi离子发光的影响.对于其发光机理进行了初步的探讨. 关键词： 近红外宽带发光 2O₄单晶')" href="#">α-BaB₂O₄单晶 辐照 退火处理     

Structural characterization of β-V2O5 films prepared by DC reactive magnetron sputtering

β-V₂O₅ films were successfully prepared on silicon substrates by direct current (DC) reactive magnetron sputtering. X-ray diffraction (XRD), Raman spectra and field emission scan electron spectroscopy (SEM) were used to characterize the samples. Results revealed that the deposition temperature significantly influenced on the crystal structure of V₂O₅ films in the growth process. When the deposition temperature was below 500 °C, the sputtered film exhibited the α-V₂O₅ structure. However, β-V₂O₅ film was successfully obtained at 550 °C. High deposition temperature might provide V and O ions high mobility and energy in the reactive sputtering process, which induced the metastable β-V₂O₅ phase formed. The thermal stability of β-V₂O₅ film was studied by micro-Raman spectroscopy. The structure of sputtered β-V₂O₅ film was unstable under high temperature conditions (beyond 500 °C).