半导体超晶格界面声子的拉曼散射与对界面本质的认识

介绍了对半导体超晶格中宏观和微观两种界面声子研究的最新结果，深入讨论了这些新结果的物理意义，以及有待进一步研究的问题 。     

KDP晶格振动模和生长机制的拉曼光谱研究(英文)

用空间群理论分析和指认了KDP晶体的拉曼活性晶格振动模 ,测量了晶体以及生长溶液的拉曼光谱 ,重点分析了出现在固 /液界面附近的 91 6cm- 1拉曼峰 ,该峰被指认为扭曲的P(OH) 2 集团反对称伸缩振动。依据本文的理论分析和实验测量 ,我们认为H2 PO- 4阴离子集团的二聚物可能是KDP晶体的生长基元。     

GaAs/AlAs超晶格的近共振喇曼散射研究

本文介绍GaAs/AlAs超晶格的室温近共振喇曼散射测量结果。由于超晶格中Fr?hlich相互作用的共振增强效应,GaAs LO声子偶模的散射得到了很大的增强。和前人的结果一样,在偏振谱我们观察到了偶模。但和前人的结果不同,在退偏振谱中我们观察到的是奇模,而不是偶模。从而证明了在近共振条件下LO声子限制模仍遵从与非共振时一样的选择定则。二级喇曼散射实验结果表明,在偏振谱中二级谱是由两个偶模组合而成,而在退偏振谱中的二级谱与前人的结果不同,由一个奇模与一个偶模组合而成。上述结果与最近提出的黄朱模型的预言是一 关键词：     

GaAs/SiO_2超晶格的制备和Raman光谱研究

我们采用射频磁控溅射方法在 p- Si衬底上成功地制备出四周期的非晶 Ga As/Si O2超晶格 ,并取得其高分辨率电镜像。以 80 0℃快速退火方法使超晶格中非晶的 Ga As层局部晶化 ,利用 Raman散射谱研究了其结构变化。     

ZrO2晶格振动的相关分析和ZY系统的拉曼光谱

采用Ｆａｔｅｌｅｙ相关方法，详细讨论了ＺｒＯ２四方相、单斜相和立方相晶格振动的对称性分类及其光谱活性。根据拉曼光谱判定了ＺＹ系统的相结构。     

超晶格中GaAs/InGaAs界面与InGaAs/GaAs界面的特性差异

In_xGa_1-xAs缓冲层上生长In_yGa_1-yAs/GaAs超晶格（x＜y）．阱层处于压缩应变，垒层处于伸张应变，其厚度均小于Mathews-Blakeslee（M-B）平衡理论计算的临界厚度．透射电子显微镜及俄歇电子能谱、二级离子质谱测试发现，GaAs/In_yGa_1-yAs界面铟组分过渡区比In_yGa_1-yAs/GaAs界面铟组 关键词：     

用拉曼光谱测量离子注入引起的晶格应变

对于10个周期的AlAs/GaAs超晶格和25个周期的GaAs/Ga0.92In0.08As超晶格,在室温下进行0.28 MeV的Zn＋注入,注入剂量为5×1013~5×1014 cm-2。通过拉曼光谱测量,定量地分析了由于离子注入所引起的晶格内应变。实验结果表明：在所选用的注入剂量下,由于离子注入引起的应变小于体材料GaAs的最大非驰豫应变值0.038,说明该注入条件下,注入区的结晶态仍然保持得比较好。在较高注入剂量下应变达到饱和,说明缺陷的产生和复合达到了平衡,从而形成了均衡的应变场分布。     

GaAs/AlAs super-flat interfaces in GaAs/AlAs and GaAs/(GaAs) (AlAs) quantum wells grown on (4 1 1)A GaAs substrates by MBE

Effectively atomically flat GaAs/AlAs interfaces over a macroscopic area (“super-flat interfaces”) have been realized in GaAs/AlAs and GaAs/(GaAs) (AlAs) quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observed at 4.2 K from each GaAs/AlAs or GaAs/(GaAs) (AlAs) QW grown on (4 1 1)A GaAs substrate. The full-width at half-maximum (FWHM) of a PL peak for GaAs/AlAs QW with a well width ( ) of 4.2 nm was 4.7 meV and that for GaAs/(GaAs) (AlAs) QW with a smaller well width of 2.8 nm (3.9 nm) was 7.6 meV (4.6 meV), which are as narrow as that for an individual splitted peak for conventional GaAs/AlAs QWs grown on (1 0 0) GaAs substrates with growth interruption. Furthermore, only one sharp peak was observed for each GaAs/(GaAs) (AlAs) QW on the (4 1 1)A GaAs substrate over the whole area of the wafer (7 7 mm ), in contrast with two- or three-splitted peaks reported for each GaAs/AlAs QW grown on the (1 0 0) GaAs substrate with growth interruption. These results indicate that GaAs/AlAs super-flat interfaces have been realized in GaAs/AlAs and GaAs/(GaAs) (AlAs) QWs grown on the (4 1 1)A GaAs substrates.     

One‐phonon resonant electron Raman scattering in a cylindrical GaAs/AlAs quantum dot

We have presented a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the interface optical phonon modes in cylindrical GaAs quantum dots (QDs) with a AlAs matrix. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are studied. Singularities are found to be sensitively size‐dependent, and, by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for QDs with different size is presented. Copyright © 2013 John Wiley & Sons, Ltd.     

Electron surface states in short-period superlattices: (GaAs)2/(AlAs)2(1 0 0)-c(4 × 4)

The electronic structure of (GaAs)₂/(AlAs)₂(1 0 0)-c(4 × 4) superlattice surfaces was studied by means of angular-resolved photoelectron spectroscopy (ARUPS) in the photon energy range 20-38 eV. Four samples with different surface termination layers were grown and As-capped by molecular beam epitaxy (MBE). ARUPS measurements were performed on decapped samples with perfect c(4 × 4) reconstructed surfaces. An intensive surface state was, for the first time, observed below the top of the valence band. This surface state was found to shift with superlattices’ different surface termination in agreement with theoretical predictions.     

Raman characterization before and after rapid thermal annealing of CeO2 thin films grown by rf sputtering on (111) Si

We investigated by Raman spectroscopy (RS) the crystalline quality of CeO₂ thin films radio frequency magnetron sputtered on n‐type (111) Si substrates from CeO₂ target. The deposition temperature was in the range of 200–800 °C. We also realized structural investigations on CeO₂ layers after Rapid Thermal Annealing (RTA) performed in the range of 750–1000 °C for 30 s under nitrogen atmosphere. So this study displays that a high‐growth temperature and a high post‐growth‐RTA temperature improves the crystalline structure of the film. In fact, the best crystalline quality, which is close to the CeO₂ target taken as a reference, is obtained for a CeO₂ layer deposited at 800 °C and post‐annealed at 1000 °C for 30 s. Copyright © 2008 John Wiley & Sons, Ltd.     

高压下金红石的拉曼光谱分析

常温下利用金刚石压腔装置(DAC)对金红石加压至40GPa,进行拉曼光谱的原位分析.发现压力约为13GPa时,金红石结构转变为斜锆石结构(ZrO2).21.1GPa相变完全.直至实验最高压力,没有进一步相变出现.在卸压中,斜锆石结构转变为α-PbO2结构.实验压力通过红宝石用拉曼光谱测压的计算方法确定,快速方便.     

PWG玻璃陶瓷中的喇曼选择定则的失效及其态密度

提出了关于PbF2 WO3 GeO2(PWG)玻璃陶瓷中介电相关函数的计算。这个计算表明：在这类无序材料中,正则振动模的短相干长度使喇曼选择定则失效,并且在态密度函数以及随频率而变的正则振动模振幅基础之上分析推导得出一级喇曼散射强度的表达式。     

Rapid synthesis and characterization of ultra‐thin shell Au@SiO2 nanorods with tunable SPR for shell‐isolated nanoparticle‐enhanced Raman spectroscopy (SHINERS)

The recently reported shell‐isolated nanoparticle‐enhanced Raman spectroscopy (SHINERS) is considered as the next generation of advanced spectroscopy for its surface and molecular generality. With the aim to utilize the virtues of shell‐isolated strategy and advance the SHINERS technique, we introduce a silane‐based rapid synthesis method of silica‐coating Au nanorods (Au@SiO₂ NRs) with manoeuvrable ultra‐thin shell and tunable SPR. The results demonstrate that the SPR of Au NRs could be optimized to obtain large Raman enhancement using either 633 nm or 785 nm laser. Differing from previously reported Au@SiO₂ NRs synthesis method, we can tune the silica shell thickness within several nanometers to maximize the Raman signal while effectively eliminating the exterior interference. And this advanced synthesis method has also significantly reduced the silica‐coating time from one day to ca. 1 h. This method as a new development of SHINERS technique has successfully got enhanced signal in solution Raman tests of malachite green, giving a great potential to be extended to in‐situ measurement for daily life detection. Copyright © 2013 John Wiley & Sons, Ltd.     

The infrared and laser Raman spectra of K2Zn(SO4)2 · 6H2O

The Raman spectra of the single crystal of K₂Zn(SO₄)₂·6H₂O belonging toC _2h ⁵ space group in the 40–1200 cm⁻¹ region in different scattering geometries and their spectra ofthe microcrystalline salt in the 1500-50 cm⁻¹ region have been reported. The dynamics of the crystal has been described in terms of 186 phonon modes under the unit cell approximation. The weak bands in the region 400–900 cm⁻¹ have been assigned to the libratory modes of H₂O molecules in contradiction to the assignments reported by Ananthanarayanan. The ambiguities existing in the literature about the assignments ofν ₂ ^c andν ₅ ^c modes of [Zn(H₂O)₆]²⁺ have also been removed. The translatory and libratory modes of different units of the crystal have been identified and assignments are made using farir and Raman data on various isomorphous tutton salts. It has been inferred that both SO ₄ ²⁻ tetrahedron and [Zn(H₂O)₆]²⁺ octahedron undergo linear as well as angular distortions from their free state symmetries in the crystal.     

六氯铅铵晶体相变的拉曼散射研究

在５Ｋ～３００Ｋ温度范围内对六氯铅铵晶体进行了拉曼散射测量，该晶体在Ｔｃ＝７８Ｋ发生从立方结构（Ｏ＾５４）至三方结构（Ｃ＾２３ｉ）的二级相变，ＰｂＣｌ＾２－６八面体Ａ１ｇ模和ＮＨ＾＋４四面体Ａ１模的拉曼频移在Ｔｃ时出现极大值，八面体Ｔ２ｇ模，四面体Ｔ２模和外振动Ｔ２ｇ模在Ｔｃ以下发生连续分裂，另外在Ｔｃ以下观测到对应于高温相ＰｂＣｌ＾２－６八面体Ｔ１ｇ模的软模。     

Polarization‐dependent Raman spectroscopy of LiBH4 single crystals and Mg(BH4)2 powders

The phonons and the crystal structure of the complex hydride LiBH₄ are studied on single crystals using micro‐Raman spectroscopy. The symmetry of the modes is determined by polarization‐dependent measurements at liquid helium temperature, allowing a better comparison and a more reliable assignment to the computed phonon wavenumbers. This has led to the revision of some former assignments made from Raman measurements on polycrystalline samples. In addition, a higher integration time allowed the detection of very weak lines, so that 35 out of 36 predicted Raman lines have been identified. We have also performed explorative Raman measurements on Mg(BH₄)₂ powders. In contrast to LiBH₄, the very poor crystallinity of this material inhibits the exploitation of the full potential of Raman spectroscopy. Only broad lines are observed, which we compare to phonon wavenumbers calculated for various possible structures using density functional theory. Copyright © 2011 John Wiley & Sons, Ltd.