Coherent signal beam amplification in two-wave mixing experiments with photorefractive Bi12SiO20 crystals

The amplification of the input signal beam in two-wave mixing experiments with photorefractive Bi₁₂SiO₂₀ crystals is achieved when an additional phase shift is established between the photoinduced index modulation (phase volume hologram) and the incident fringe pattern. This stationary phase shift is introduced by either moving the crystal or the interference fringes at a constant speed. The transferred intensity is measured versus the applied electric field, fringe spacing and crystal velocity. The crystallographic orientation and the relative displacement with respect to the applied electric field polarity determine the amplitude of the energy transfer. For the first time in this crystal, signal beam amplification is reached for an applied field E₀ > 8 kV cm^?1 and a crystal or fringe displacement speed around 5 μm s^?1 at the green line (λ = 514 nm) of an argon laser.     

Transient energy transfer during hologram formation in LiNbO3 in external electric field

Volume phase hologram recording in pure LiNbO₃ crystals with applied electric field E ≈ 5 kV/cm is accompanied by considerable intensity redistribution of the writing beams by transient energy transfer. Practically the whole intensity of the donor beam may be transferred into the weak acceptor beam with initial intensity 3% from total incident intensity. This effect originates from transient phase mismatch of the recorded phase grating and fringe pattern in the applied electric field when the interacting beams have different intensities.     

Ferroelectric properties of Pr6O11-doped Bi4Ti3O12

Praseodymium doped Bi₄Ti₃O₁₂ (BIT) ceramics with composition Bi_2.9Pr_0.9Ti₃O₁₂ (BPT) were prepared by solid state reaction. These samples have polycrystalline Bi-layered perovskite structure without preferred orientation, and consist of well-developed plate-like grains with random orientation. Pr doping into BIT causes a large shift of the Curie temperature (T_C) of the BIT from 675 to 398 °C. At an electric field of 87 kV/cm, the remanent polarization and the coercive field of the BPT ceramics are 30 μC/cm² and 52 kV/cm, respectively. Furthermore, the dielectric permittivity and the dissipation factor of the BPT ceramics are 300 and 0.003 at 1 MHz, 1 V, and room temperature. Ferroelectric properties of the BPT ceramics are superior to V-doped Bi₄Ti₃O₁₂ (∼20 μC/cm² and 80 kV/cm) and (Sr, Ta)-doped Bi₄Ti₃O₁₂ (∼12 μC/cm² and 71 kV/cm) ceramics. In addition, the dense ceramics of praseodymium-doped B₄Ti₃O₁₂ were obtained by sintering at 1100 °C, about 100-200 °C lower than those of the SrBi₂Ta₂O₉ system.     

Spatial frequency dependence of the energy transfer in two-wave mixing experiments with BSO crystals

Energy transfer between two beams interfering in an electrooptic Bi₁₂SiO₂₀ crystal is analyzed as a function of the spatial frequency of the recorded hologram. We report high coefficients in a wide range of low spatial frequencies $\text{(Λ}{}^{-1}\text{?44 mm}{}^{-1}\text{)}$, when the drift length of the photocarriers becomes comparable to the fringe spacing. Exponential gain coefficients of Γ = 7 cm^-1 have been reached for high intensity beams ratio (β > 10⁴) and an optimized fringe displacement speed (moving grating recording). Application to coherent image amplification (×20) is shown.     

Diffraction efficiency and energy transfer in two-wave mixing experiments with Bi12SiO20 crystals

The diffraction efficiency and energy transfer are investigated in photorefractive Bi₁₂SiO₂₀ crystals (BSO). Dependence on fringe spacing, electric fields, light intensity and rise-time constants are reported. The optimum crystallographic orientation for each effect is determined for vertical polarization of the recording beams. It is shown that beam coupling is a very sensitive phenomenon in BSO crystals where charge transport lengths are equivalent to usual fringe spacings. Experimental results are interpreted on the basis of the nonlinear theory of self-diffraction developed by Kukhtarev et al. [10].     

溶胶-凝胶法制备Sr2Bi4Ti5O18薄膜及其铁电性能研究

采用溶胶-凝胶法,在氧气氛中和层层晶化的工艺条件下,成功地制备了沉积在Pt/Ti/SiO₂/Si(100)衬底上的铁电性能优良的Sr₂Bi₄Ti₅O₁₈ (SBTi)薄膜,并研究了SBTi薄膜的微结构、表面形貌、铁电性能和疲劳特性.研究表明：薄膜具有单一的层状钙钛矿结构，且为随机取向；薄膜表面光滑，无裂纹，厚度约为725nm；铁电性能测试显示较饱和、方形的电滞回线，当外电场强度为275kV/cm时 关键词： 溶胶-凝胶法 铁电薄膜 2Bi₄Ti₅O₁₈')" href="#">Sr₂Bi₄Ti₅O₁₈     

Light induced charge transfer processes in Cr doped Bi12GeO20 and Bi12SiO20 single crystals

Optical absorption and ESR spectra of Bi₁₂GeO₂₀ doped with Cr were measured before and after illumination with visible light. It was found that Cr⁴⁺ ions in tetrahedral position are responsible for light induced ESR and optical spectra. The g-factor of the center is 1.945 ± 0.002. Crystal field parameters for the Cr⁴⁺ center are D_q = 820 cm^?1 and B = 429cm^?1. The photochromic effect is explained in terms of a Cr⁵⁺?Cr⁴⁺ charge transfer process.     

Phase-conjugate wavefront generation via four wave mixing in Bi12GeO20 crystals - reflection hologram type

Phase-conjugate wavefront generation via real-time holography in degenerate four-wave mixing experiments in photorefractive crystals Bi₁₂GeO₂₀ is presented. The phase volume hologram responsible for the phase-conjugate wavefront generation is a reflection hologram. No external electric field is applied and electron diffusion is the main mechanism responsible for the formation of the hologram. The theoretical and experimental results for wavefront reflectivity as a function of the intensity ratio of the writing beams are given.     

Two-wave mixing and energy transfer in BaTiO3 application to laser beamsteering

Energy transfer between the two recording beams in a BaTiO₃ photorefractive crystal is analyzed as a function of the following parameters: incident beams ratio, spatial frequency, pump beam intensity. Exponential gain coefficients Γ ≈ 20 cm^-1 are reached for optimized holographic recording conditions. Application of the energy transfer to a new method of laser beam deflection is proposed.     

Ferroelectric properties of Pr and Nb co-substituted Sr0.8Bi2.2Ta2O9 thin films

Thin film of both A- and B-site co-substituted Sr_0.8Bi_2.2Ta₂O₉ (SBT) by Pr³⁺ and Nb⁵⁺, i.e. Sr_0.8Pr_0.1Bi_2.1Ta_1.5Nb_0.5O₉ (SPBTN) was fabricated on Pt/Ti/SiO₂/Si substrates by metalorganic decomposition method. The Nb⁵⁺ substitution at B-site and Pr³⁺ substitution at A-site enhanced the remanent polarization and reduced the coercive field of the films, respectively. The remanent polarization (2P_r) value of the SPBTN film was 22 μC/cm². The coercive field (2E_c) value of the SPBTN film was 102 kV/cm, which was much lower than that of SBTN (165 kV/cm). The effects of substitution on structural and ferroelectric properties of SBT were discussed in detail. As a result, the A- and B-sites co-substitution may be one of the promising ways to improve ferroelectric properties of SBT.     

Bi离子掺杂GeO2-Al2O3-M(M=Na2O，BaO，Y2O3)玻璃的光学性质

用高温熔融法制备了Bi离子掺杂浓度为1mol%的GeO-B₂O₃-Na₂O (GBNB)，GeO₂-Al₂O₃-Na₂O(GANB)，GeO₂-Al₂O₃-BaO(GABB)和GeO₂-Al₂O₃-Y₂O₃(GAYB)玻璃.测定了样品玻璃的差热曲线、吸收、发射光谱及荧光衰减曲线.实验发现GBNB，GANB，GAYB，GABB的吸收边带逐步发生红移.由于这些吸收边带是由Bi³⁺的6s²电子到Bi⁵⁺ 6s⁰空轨道的跃迁引起.因此推断GBNB，GANB，GAYB，GABB玻璃中Bi⁵⁺离子的含量逐步增加.在GABB，GAYB，GANB三个样品中观察到发光中心约1220nm超宽带荧光发射.荧光强度从GABB，GAYB，GANB逐步减弱，荧光半高宽和荧光寿命逐步变小.这些超宽带的荧光归属为Bi⁵⁺离子的发光所致.从吸收与荧光光谱的变化，推断在GeO₂-Al₂O₃玻璃中引入BaO，Y₂O₃组分有利于Bi⁵⁺离子的形成.讨论了BaO，Y₂O₃化学组分对Bi离子在玻璃中的价态影响的内在机理. 关键词： 5+离子')" href="#">Bi⁵⁺离子 超宽带发光 吸收带 荧光寿命     

Si基Bi3.25La0.75Ti3O12铁电薄膜的制备与特性研究

采用Sol-Gel工艺低温制备了Si基Bi_3.25La_0.75Ti₃O₁₂铁电薄膜.研究了退火温度对薄膜微观结构、介电特性与铁电性能的影响.500℃退火处理的Bi_3.25La_0.75Ti₃O₁₂薄膜未能充分晶化，晶粒细小且有非晶团聚，介电与铁电性能均较差.高于550℃退火处理的Bi_3.25La_{0.75 关键词： 铁电薄膜 3.25}La_0.75Ti₃O₁₂')" href="#">Bi_3.25La_0.75Ti₃O₁₂ Sol-Gel工艺     

Light-induced charge transfer processes in Mn-doped Bi12GeO20 and Bi12SiO20 single crystals

The optical absorption and ESR spectra of Bi₁₂GeO₂₀ and B₁₂SiO₂₀ doped with Mn have been measured before and after illumination with visible light. Uniaxial stress measurements on a sharp line observed at 8026 cm^?1 were performed. The observed ESR spectrum is a superposition of six lines resulting from the hyperfine interaction of manganese ions in tetrahedral positions. The g-factor and hyperfine constant are g = 1.999 ± 0.003 and A = 78 Gs. Analysis of the light-induced absorption spectrum leads to the conclusion that a small hole polaron bound to an Mn impurity at a tetrahedral site is responsible for the very broad absorption band which appears after illumination. The sharp line is interpreted as due to a transition inside the Mn⁺ center in tetrahedral coordination. Bands in the region 10,000–16,000 cm^?1 are due to Mn³⁺ centers in interstitial positions, whose symmetry can be treated to a first approximation as tetragonal. The following crystal field parameters for this center were found: B = 565 cm^?1, Dq = 1400 cm^?1, Dt = ?330 cm^?1, Ds = 4170 cm^?1 and C = 2260 cm^?1. The illumination conditions which are needed for homogeneous coloration of the sample are also discussed.     

Diffraction efficiency and energy transfer during hologram formation in reduced KNbO3

Volume phase-hologram formation by the photorefractive effect in KNbO₃ is accompanied by a stationary energy transfer between writing beams. The change in energy transfer by applying an electric field on the reduced crystals is shown to be due to an efficient increase in migration length which can reach values comparable or larger than the fringe spacing. It is demonstrated that photovoltaic contribution to the diffraction efficiency and energy transfer is rather small in reduced KNbO₃ and that diffusion of photogenerated free holes is the dominant charge transport for the photorefractive effect in unbiased crystals. The experimental results for diffraction efficiency and energy transfer as a function of grating spacing, electric field, light intensity and temperature is well described by a recent theory of Kukhtarev and Vinetskii.     

Real-time image subtraction in four-wave mixing with photorefractive Bi12GeO20 crystals

Based on a classical two-exposure holographic technique, real-time image subtraction is obtained in four-wave mixing of a reflection hologram type with highly sensitive photorefractive Bi₁₂GeO₂₀ crystals. This method takes advantage of the relatively slow response and erasure times of holographic recording in Bi₁₂GeO₂₀ crystals.     

Novel phosphors of Eu, Tb or Bi activated Gd2GeO5

Novel phosphors of or Bi³⁺ doped Gd₂GeO₅ were synthesized and their photoluminescent and cathodoluminescent properties were investigated. (Gd_1−xEu_x)₂GeO₅ and (Gd_1−xTb_x)₂GeO₅ formed continuous solid solution in the range of x=0.0-1.0. Gd₂GeO₅:Eu³⁺ and Gd₂GeO₅:Bi³⁺ presented bright red and blue luminescence for both UV and cathode ray excitation, respectively. While Gd₂GeO₅:Tb³⁺ gave bright green cathodoluminescence. In all three phosphors, the energy transfer from Gd³⁺ to activators (e.g. or Bi³⁺) occurred.     

Reversible photochromic effects in doped single crystals of bismuth germanium (Bi12GeO20) and bismuth silicon oxide (Bi12SiO20)

Absorption of Bi₁₂GeO₂₀ and Bi₁₂SiO₂₀ single crystals doped with Mn and Cr were investigated before and after illumination with visible light. Pronounced photochromic effects were found. The effects are explained in terms of light induced charge transfer Mn⁴⁺→Mn⁵⁺ and Cr³⁺→Cr²⁺.     

SrCl2:Co++EPR谱电场效应的理论解释

本文从理论上研究了[111]方向电场对SrCl₂:Co⁺⁺的EPR谱的影响。结果表明:外电场使晶格发生畸变而偏离原来的O_h对称,成为C_3v。由此圆满地从理论上解释了零场分裂因子D随电场强度E线性变化的实验规律,并从理论上预言了晶格在平行电场方向的变化率为α=—8×10^-5α₀mm/kV,在垂直电场方向的变化率β=1.66×10^-4α₀关键词：     

Emission and excitation spectra of Bi2Ge3O9:Eu3+

The emission and excitation spectra of the Bi₂Ge₃O₉:Eu crystal are observed at 77 K and 297 K. The spectra contain groups of sharp lines which are attributed to the transitions within 4f⁶ (Eu³⁺) configuration. The numbers of Stark splitting of terminal levels of transitions from ⁵D₀ and ⁷F₀ multiplets indicate that Eu³⁺ substitutes for Bi³⁺ in Bi₂Ge₃O₉. Tentative assignment of Stark levels of ⁷F_0-4 multiplets is made to crystal quantum numbers of C₃ symmetry which represents the site symmetry of Bi³⁺ in Bi₂Ge₃O₉. The following set of values of crystal field parameters of the C₃ point group is found to give the best overall agreement between the observed energy levels and the calculated levels: B²₀ = -533.84 cm^-1, B⁴₀ = 1085.99 cm^-1, Re(B⁴₃) = 327.57 cm^-1, Im(B⁴₃) = 75.209 cm^-1, B⁶₀ = 185.02 cm^-1, Re(B⁶₃) = - 68.475 cm^-1, Im(B⁶₃) = - 300.45 cm^-1, Re(B⁶₆) = 137.24 cm^-1 and Im(B⁶₆) = 882.29 cm^-1.     

Electromechanical properties and dielectric behavior of (Bi1/2Na1/2)(1−1.5x)BixTiO3 lead-free piezoelectric ceramics

Bismuth doped bismuth sodium titanate ceramics [(Bi_1/2Na_1/2)_(1−1.5x)Bi_xTiO₃, x=0 to 0.06] were prepared, and the resulting effects on the microstructure and dielectric properties were examined. All of the Bi-doped ceramics exhibited a single phase of perovskite structure with rhombohedral symmetry. The poling leakage current was significantly reduced by the doping of Bi, facilitating the poling process of the ceramics. The doping with Bi enhances the piezoelectric properties and increases the dielectric constant and the dielectric loss of the ceramics. At 2 mol% Bi-doping level, the ceramics exhibit a large remanent polarization of 47 μC/cm² and a relatively low coercive field of 71 kV/cm, while their d₃₃ and k_p reach a maximum value of 95 pC/N and 21%, respectively.