An ab initio calculation of 17O and 29Si NMR parameters for SiO2 polymorphs

Ab initio molecular orbital calculations (Hartree–Fock, HF and density functional theories, DFTs) have been carried out for SiO₂ polymorphs coesite, low cristobalite, and -quartz, in order to investigate the reliability of this method for predicting ²⁹Si and ¹⁷O nuclear magnetic resonance (NMR) properties of silicates. Oxygen- and silicon-centered clusters consisting of one (1T) to three tetrahedral (3T) shells (one to four atomic shells), taken from real crystal structure, have been investigated. It is found that for reasonable predication of both the ²⁹Si and ¹⁷O chemical shifts (δ_i^Si and δ_i^O), the minimum cluster is one that gives the correct second neighbors to the nucleus of interest. Both the δ_i^Si and δ_i^O have reached convergence with respect to cluster size at the OH-terminated two tetrahedral (2T) shell (three atomic shells around Si and four atomic shells around O) model. At convergence, the calculated δ_i^Si values agree well (within ±1 ppm) with experimental data. The calculated ¹⁷O electric field gradient (EFG)-related parameters also agree with experimental data within experimental uncertainties. The calculation also reproduces small differences in δ_i^O for O sites with similar tetrahedral connectivities, but shows deviations up to about 10 ppm in relative difference for O sites with different tetrahedral connectivities. The poor performance for the latter is mainly due to the approximations of the HF method. Our study thus suggests that the ab initio calculation method is a reliable mean for predicting ²⁹Si and ¹⁷O NMR parameters for silicates. Such an approach should find application not only to well-ordered crystalline phases, but also to disordered materials, by combining with other techniques, such as the molecular dynamics simulation method.     

Solid-state NMR investigations of Si-29 and N-15 enriched silicon nitride

We compare ²⁹Si magic-angle spinning (MAS) nuclear magnetic resonance (NMR) spectra from the two modifications of silicon nitride, α-Si₃N₄ and β-Si₃N₄, with that of a fully (²⁹Si, ¹⁵N)-enriched sample ²⁹Si₃¹⁵N₄, as well as ¹⁵N NMR spectra of Si₃¹⁵N₄ (having ²⁹Si at natural abundance) and ²⁹Si₃¹⁵N₄. We show that the ¹⁵N NMR peak-widths from the latter are dominated by J(²⁹Si–¹⁵N) through-bond interactions, leading to significantly broader NMR signals compared to those of Si₃¹⁵N₄. By fitting calculated ²⁹Si NMR spectra to experimental ones, we obtained an estimated coupling constant J(²⁹Si–¹⁵N) of 20 Hz. We provide ²⁹Si spin-lattice (T₁) relaxation data for the ²⁹Si₃¹⁵N₄ sample and chemical shift anisotropy results for the ²⁹Si site of β-Si₃N₄. Various factors potentially contributing to the ²⁹Si and ¹⁵N NMR peak-widths of the various silicon nitride specimens are discussed. We also provide powder X-ray diffraction (XRD) and mass spectrometry data of the samples.     

Dielectric properties of nano Si/C/N composite powder and nano SiC powder at high frequencies

The dielectric properties of nano Si/C/N composite powder and nano SiC powder at high frequencies have been studied. The nano Si/C/N composite powder and nano SiC powder were synthesized from hexamethyldisilazane ((Me₃Si)₂NH) (Me:CH₃) and SiH₄–C₂H₂, respectively, by a laser-induced gas-phase reaction. The complex permittivities of the nano Si/C/N composite powder and nano SiC powder were measured at a frequency range of 8.2–12.4 GHz. The real part (′) and imaginary part (″) of the complex permittivity, and dissipation factor (tg δ=″/′) of nano Si/C/N composite powder are much higher than those of nano SiC powder and bulk SiC, Si₃N₄, SiO₂, and Si, especially the tg δ. The promising features of nano Si/C/N composite powder would be due to more complicated Si, C, and N atomic chemical environment than in a mixture of pure SiC and Si₃N₄ phase. The charged defects and quasi-free electrons moved in response to the electric field, diffusion or polarization current resulted from the field propagation. Because there exists graphite in the nano Si/C/N composite powder, some charge carries are related to the sp³ dangling bonds (of silicon and carbon) and unsaturated sp² carbons. The high ″ and tg δ of nano Si/C/N composite powder were due to the dielectric relaxation. The nano Si/C/N composite powder would be a good candidate for electromagnetic interface shielding material.     

Electronic structures of Al–Si clusters and the magic number structure Al8Si4

The low-energy structures of Al₈Si_m (m = 1–6) have been determined by using the genetic algorithm combined with density functional theory and the Second-order Moller-Plesset perturbation theory (MP2) models. The results show that the close-packed structures are preferable in energy for Al–Si clusters and in most cases there exist a few isomers with close energies. The valence molecular orbitals, the orbital level structures and the electron localisation function (ELF) consistently demonstrate that the electronic structures of Al–Si clusters can be described by the jellium model. Al₈Si₄ corresponds to a magic number structure with pronounced stability and large energy gap; the 40 valence electrons form closed 1S²1P⁶1D¹⁰2S²1F¹⁴2P⁶ shells. The ELF attractors also suggest weak covalent Si–Si, Si–Al and Al–Al bonding, and doping Si in aluminium clusters promotes the covalent interaction between Al atoms.     

Ion-beam irradiation effect on solid-phase growth of β-FeSi2

Effects of Ar⁺ ion-beam irradiation on solid-phase growth of β-FeSi₂ have been investigated. Fe (10 nm)/Si structures were irradiated with 25 keV Ar⁺ (5.0×10¹⁵ cm⁻²) at a temperature of 25°C (sample A) or 400°C (sample B), and subsequently annealed at 800°C. A reference was obtained after annealing without irradiation (sample C). X-ray diffraction results indicated that β-FeSi₂ was formed after annealing at 800°C for 5 h, and the formation rate was the fastest for sample A and the slowest for sample C, i.e., A>BC. However, Auger electron spectroscopy measurements showed that atomic mixing at Fe/Si interface before annealing was B>AC. These results suggested that amorphization of Si substrate, in addition to atomic mixing, enhanced the solid-phase growth of β-FeSi₂, which was confirmed experimentally. Moreover, a direct band gap of 0.89 eV was observed for the sample with pre-amorphization by the Fourier-transform infrared (FT-IR) spectroscopy measurements. These enhancement effects were attributed to that the phase transition to β-FeSi₂ was accelerated by atomic arrangement induced during annihilation of excess vacancies. These enhancement effects can be utilized for nano-fabrication of β-FeSi₂ by using focused ion-beam irradiation.     

Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer

Using the photoluminescence surface state spectroscopy (PLS³) technique, attempts were made to determine the surface state density (N_ss) distribution on Al_xGa_1−xAs (x≈0.3) surfaces passivated by the Si interface control layer (ICL) technique. Air-exposed AlGaAs epitaxial wafers which are technologically important for fabrication of various devices were passivated ex situ by forming a SiO₂/Si₃N₄/Si ICL/AlGaAs structure after the HCl treatment and their photoluminescence behavior was investigated in detail. The result of the PLS³ analysis indicated that Si ICL-based passivation reduces the minimum interface state density value down to 10¹⁰ cm⁻² eV⁻¹ range. Some indication was also obtained that further improvements are possible by using electron cyclotron resonance (ECR)-enhanced N₂ plasma for Si₃N₄/Si ICL interface formation.     

Determination of Backbone Angle ψ in Proteins Using a TROSY-Based α/β-HN(CO)CA-J Experiment

Transverse relaxation-optimized NMR experiment (TROSY) for the measurement of three-bond scalar coupling constant between ¹H^α_i−1 and ¹⁵N_i defining the dihedral angle ψ is described. The triple-spin-state-selective experiment allows measurement of ³J_H^αN from ¹³C^α, ¹⁵N, and ¹H^N correlation spectra H₂O with minimum resonance overlap. Transverse relaxation of ¹³C^α spin is minimized by using spin-state-selective filtering and by acquiring a signal longer in ¹⁵N-dimension in a manner of semi-constant-time TROSY evolution. The ³J_H^αN values obtained with the proposed α/β-HN(CO)CA-J TROSY scheme are in good agreement with the values measured earlier from ubiquitin in D₂O using the HCACO[N] experiment.     

Determination of the (Na) Sternheimer antishielding factor by Na NMR spectroscopy on sodium oxide chloride, Na3OCl

The (Na⁺) Sternheimer antishielding factor γ_∞ (Na⁺) was determined by ²³Na NMR spectroscopy on sodium oxide chloride, Na₃OCl. The quadrupolar coupling constant of the sodium ion in Na₃OCl was determined to QCC=11.34 MHz, which presents the largest coupling constant of a sodium nucleus observed so far. Applying a simple point charge model, the largest principal value of the electric field gradient at the sodium site was calculated to V_zz=−6.76762·10²⁰ V/m². From these values we calculated the (Na⁺) Sternheimer antishielding factor to γ_∞ (Na⁺)=−5.36. In sodium oxide, Na₂O, we observed an isotropic chemical shift of δ_CS=55.1 ppm, referenced to 1 M aqueous NaCl (δ=0 ppm).     

The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation

The influence of P ion doping on the photoluminescence (PL) of the system of nanocrystals in SiO₂ matrix (SiO₂:Si) both without annealing and after annealing at various temperatures (provided before and after additional P implantation) is investigated. The Si and P implantation was carried out with ion energies of 150 keV and doses Φ_Si=10¹⁷ cm⁻² and Φ_P=(0.1–300)×10¹⁴ cm⁻² (current density j3 μAcm⁻²). The system after Si implantation was formed at 1000°C and 1100°C (2 h). For the case of SiO₂:Si system as-implanted by P, the intensity of PL was drastically quenched, but partially retained. As for the step-by-step annealing (at progressively increased temperatures) carried out after P implantation, the sign and degree of doping effect change with annealing temperature. The possible mechanisms of these features are discussed.     

Characterizing SIMS transient effects apparent in matrix secondary ion signals from silicon under 1 keV Cs impact

The low energy Si₂⁻, Si₃⁻ and Si₄⁻ secondary ion signals resulting from Cs⁺ impact on Si appear to scale with the Cs uptake noted over the SIMS transient region in a manner consistent with the electron tunneling model. These populations, particularly Si₃⁻ and Si₄⁻ also exhibit a relative insensitivity to the presence of O (shown once sputter rate variations are accounted for). Profiles that more closely match the expected Si concentration gradient from a native oxide terminated Si wafer present within the SIMS transient region can also be obtained by simply dividing the Si₃⁻ or Si₄⁻ secondary ion intensities by the Si₂⁻ intensities. This suggests a possible alternative route for reducing transient effects present in the negative secondary ion populations from Si wafers.     

Isotope and Hyperfine Structure in the "Orange" System of FeO: Evidence for Two Δi Excited States

The orange system of FeO has been reinvestigated using low-temperature molecular beam laser-induced fluorescence spectra, obtained by supersonic jet cooling. Two new weak bands have been found, and analyses of some of the previously known bands extended. Measurements of the ⁵⁴Fe-⁵⁶Fe isotope shifts have been made for most of the bands, and the hyperfine structure of the low-J lines has been recorded for two of the strongest bands of ⁵⁷FeO. The isotope shifts are consistent with the presence of two ⁵Δ_i-⁵Δ_i transitions lying within 1000 cm⁻¹; the origins of the Ω = 4 spin components lie at 5583 and 6110 Å, respectively. The hyperfine patterns and the spin-orbit structure indicate that the upper state electron configurations are (3dδ)³ (3dπ)² (3dσ)¹, (D⁵Δ_i, 5583 Å) and O(2pπ)³ (4sσ)¹ (3dδ)³(3dπ)³, (D′⁵Δ_i, 6110 Å). The bond length in the D′ state (r₀ = 1.654 Å) has been obtained from a deperturbation of the 6110 Å band; it is only 0.035 Å longer than in the ground state, which indicates that electron promotion between the two π orbitals, nominally O(2pπ) and Fe(3dπ), has only a small effect on the strength of the bonding. The new isotope data still do not clarify the vibrational assignments of the higher levels, which are disorganized by extensive electronic perturbations.     

Al and Si MAS NMR investigations of cordierite glass, μ- and α-cordierite

²⁷Al and ²⁹Si Magic-Angle Spinning NMR results are reported for conventionally prepared glass of cordierite stoichiometry (2MgO · 2Al₂O₃ · 5SiO₂), the metastable high-quartz solid solution (μ-cordierite) and the high-temperature polymorph of cordierite (α-cordierite). Both, ²⁷Al two-dimensional (2D) quadrupole nutation experiments and ²⁷Al satellite transition spectroscopy (SATRAS) have been applied to identify two different tetrahedrally-coordinated aluminium sites (AlO₄). SATRAS has been used to extract the quadrupole interaction parameters and their distribution, the isotropic chemical shifts and the relative populations of the different Al sites. Both, the ²⁷Al and ²⁹Si NMR results, lead to the conclusion that a perfect Si/Al disorder does not exist in these investigated cordierite samples.     

Polysilyl radicals: EPR study of the formation and decomposition of star polysilanes

Electron paramagnetic resonance (EPR) spectroscopy was fruitfully used for studying the formation and the reactions of the star polysilane radical (Me₃SiMe₂Si)₃Si (1).1, which was successfully generated both thermally and photochemically from a variety of precursors, was found to be significantly more stable kinetically than the (Me₃Si)₃Si radical. Thus, (Me₃SiMe₂Si)₃Si^⋅ has a half-life time of ca. 6 min at 20°C, while (Me₃Si)₃Si^⋅ can be observed only at −25°C. Density-functional quantum-mechanical calculations show that1 and (Me₃Si)₃Si^⋅ have the same thermodynamic stability. The high kinetic stability of1 is attributed to its backfold “umbrella”-type conformation where the β-silyl groups point “inwards” towards the radical center. This conformation protects the radical center of1 from dimerization and other reactions. The EPR spectrum of1 and in particular the Si α-hyperfine coupling constant of 5.99 mT shows that1 is less pyramidal than (Me₃Si)₃Si^⋅ but is more pyramidal than (i-Pr₃Si)₃Si^⋅, with an estimated SiSiSi bond angle around the radical center of 118∘. Photolysis and thermolysis of [(Me₃SiMe₂Si)₃Si]₂ also involves the intermediacy of1. Photolysis of [(Me₃SiMe₂Si)₃Si]₂ leads to (Me₃SiMe₂Si)₄Si, while thermolysis produced the less strained isomer of 1, (Me₃SiMe₂Si)₃SiSi-Me₂Si(Me₃SiMe₂Si)₂SiMe₃. In this study we provide the first direct evidence that silyl radicals are involved as intermediates in the reactions of silanes with di(tert-butyl)mercury.     

Formation of Sim and SimCn clusters by C60 sputtering of Si

The secondary ion mass spectrum of silicon sputtered by high energy C₆₀⁺ ions in sputter equilibrium is found to be dominated by Si clusters and we report the relative yields of Si_m⁺ (1 ≤ m ≤ 15) and various Si_mC_n⁺ clusters (1 ≤ m ≤ 11 for n = 1; 1 ≤ m ≤ 6 for n = 2; 1 ≤ m ≤ 4 for n = 3). The yields of Si_m⁺ clusters up to Si₇⁺ are significant (between 0.1 and 0.6 of the Si⁺ yield) with even numbered clusters Si₄⁺ and Si₆⁺ having the highest probability of formation. The abundances of cluster ions between Si₈⁺ and Si₁₁⁺ are still significant (>1% relative to Si⁺) but drop by a factor of ∼100 between Si₁₁⁺ and Si₁₃⁺. The probability of formation of clusters Si₁₃⁺-Si₁₅⁺ is approximately constant at ∼5 × 10⁻⁴ relative to Si⁺ and rising a little for Si₁₅⁺, but clusters beyond Si₁₅ are not detected (Si_m≥16⁺/Si⁺ < 1 × 10⁻⁴). The probability of formation of Si_m⁺ and Si_mC_n⁺ clusters depends only very weakly on the C₆₀⁺ primary ion energy between 13.5 keV and 37.5 keV. The behaviour of Si_m⁺ and Si_mC_n⁺ cluster ions was also investigated for impacts onto a fresh Si surface to study the effects that saturation of the surface with C₆₀⁺ in reaching sputter equilibrium may have had on the measured abundances. By comparison, there are very minor amounts of pure Si_m⁺ clusters produced during C₆₀⁺ sputtering of silica (SiO₂) and various silicate minerals. The abundances for clusters heavier than Si₂⁺ are very small compared to the case where Si is the target.The data reported here suggest that Si_m⁺ and Si_mC_n⁺ cluster abundances may be consistent in a qualitative way with theoretical modelling by others which predicts each carbon atom to bind with 3-4 Si atoms in the sample. This experimental data may now be used to improve theoretical modelling.     

The hall effect in PdSi-based amorphous alloys containing Co.

The Hall effect in amorphous Pd₈₀Si₂₀ and Pd_80–x Si₂₀Co _x , wherex=2, 4, 6 (at.% are implied throughout) alloys was investigated. Measurements were carried out at r.t. in fields up to 17·5 kG. Also the electrical conductivity was measured. The Hall effect was found negative in all alloys of the above composition. Observedx-dependence of the Hall constantR _H tends to change the sign of the effect and is interpreted on the assumption that an extraordinary Hall effect manifests itself besides the ordinary one in Co-containing alloys. The value ofR _H for the basal alloy should be looked upon as an evidence of electron transfer from glass-former (Si) to transition metal (Pd) empty d-states. The values ofR _H obtained for the alloys withx=0, 2, 4, 6 are respectively, –7·8; –8·7; –8·3; –5·2 (×10^–5 cm³/A. sec throughout).     

Improved quantification of alite and belite in anhydrous Portland cements by Si MAS NMR: Effects of paramagnetic ions

The applicability, reliability, and repeatability of ²⁹Si MAS NMR for determination of the quantities of alite (Ca₃SiO₅) and belite (Ca₂SiO₄) in anhydrous Portland cement was investigated in detail for 11 commercial Portland cements and the results compared with phase quantifications based on powder X-ray diffraction combined with Rietveld analysis and with Taylor–Bogue calculations. The effects from paramagnetic ions (Fe³⁺) on the spinning sideband intensities, originating from dipolar couplings between ²⁹Si and the spins of the paramagnetic electrons, were considered and analyzed in spectra recorded at four magnetic fields (4.7–14.1 T) and this has led to an improved quantification of alite and belite from ²⁹Si MAS NMR spectra recorded at “high” spinning speeds of ν_R=12.0–13.0 kHz using 4 or 5 mm rotors. Furthermore, the impact of Fe³⁺ ions on the spin-lattice relaxation was studied by inversion-recovery experiments and it was found that the relaxation is overwhelmingly dominated by the Fe³⁺ ions incorporated as guest-ions in alite and belite rather than the Fe³⁺ sites present in the intimately mixed ferrite phase (Ca₂Al_xFe_2−xO₅).     

Si-nanostructures formation in amorphous silicon nitride SiNx:H deposited by remote PECVD

The formation of silicon nanoclusters embedded in amorphous silicon nitride (SiN_x:H) can be of great interest for optoelectronic devices such as solar cells. Here amorphous SiN_x:H layers have been deposited by remote microwave-assisted chemical vapor deposition at 300 °C substrate temperature and with different ammonia [NH₃]/silane [SiH₄] gas flow ratios (R=0.5−5). Post-thermal annealing was carried out at 700 °C during 30 min to form the silicon nanoclusters. The composition of the layers was determined by Rutherford back scattering (RBS) and elastic recoil detection analysis (ERDA). Fourier transform infrared spectroscopy (FTIR) showed that the densities of SiH (2160 cm⁻¹) and NH (3330 cm⁻¹) molecules are reduced after thermal annealing for SiN:H films deposited at flow gas ratio R>1.5. Breaking the SiH bonding provide Si atoms in excess in the bulk of the layer, which can nucleate and form Si nanostructures. The analysis of the photoluminescence (PL) spectra for different stoichiometric layers showed a strong dependence of the peak characteristics (position, intensity, etc.) on the gas flow ratio. On the other hand, transmission electron microscopy (TEM) analysis proves the presence of silicon nanoclusters embedded in the films deposited at a gas flow ratio of R=2 and annealed at 700 °C (30 min).     

Impurity distribution and electrical characteristics of boron-doped Si1−x Ge x /Si p +/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping

A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si_1–x Ge _x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Doping (GILD) are used to fabricate boron-doped heteroepitaxial p ⁺/N Si_1–x Ge _x /Si layers and diodes. Borontrifluoride is used as the gaseous dopant source in the GILD process step. Boron incorporation and activation are investigated as a function of laser energy fluence and the number of laser pulses using SIMS and Halleffect measurements. The dose of incorporated dopant is on the order of 10¹³ cm^–2 per pulse. The B profiles obtained are flat except for a peak at the interface resulting from segregation effects. The B and Ge distributions are compared with shifts in the turn-on voltage of p ⁺/N Si_1–x /Si heterojunction diodes produced by the process. The GILD/PLIE process is spatially selective with the resulting diodes fabricated being quasiplanar. Hole mobilities in the heavily doped Si_1–x Ge _x films are found to be slightly lower than in comparable Si films.Presently at the Oregon Graduate Institute, Beaverton, OR 97006, USA     

Structure of self-implanted silicon annealed under enhanced hydrostatic pressure

Implantation of any ions at a sufficiently high dose and energy (E) into single-crystalline Si leads to the creation of amorphous Si (aSi), with damages peaking near the projected range (R _p) of implanted species. Enhanced hydrostatic pressure (HP) at a high temperature (HT) influences the recrystallization of aSi. The structure of self-implanted Czochralski silicon (Si⁺ dose, D=2×10¹⁶ cm^?2, E=150 keV, R _p=0.22 μm) processed for 5 h at 1400 or 1520 K under HPs up to 1.45 GPa was investigated by X-ray, secondary ion mass spectrometry and photoluminescence methods. The implantation of Si produces vacancies (V) and self-interstitials (Si_i). Vacancies and Si_is form complex defects at HT–HP, also with contaminants (e.g. oxygen, always present in Czochralski silicon). The mobility and recombination of V and Si_i as well as the kinetics of recrystallization are affected by HP, thus processing at HT–HP affects the recovery of aSi.     

Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique

The diffusion of Au in dislocation-free or plastically deformed Si (10¹¹ to 10¹³ dislocations/m²) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D _I ^SD =0.064×exp(–4.80 eV/kT)m² s^–1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC _i ^eq D _i=0.0064 ×exp(–3.93 eV/kT)m² s^–1 was obtained in the temperature range 1180–1427 K, whereC _i ^eq andD _i are the solubility and diffusivity of interstitial Au in Si.