Ionic Liquid Activation of Amorphous Metal‐Oxide Semiconductors for Flexible Transparent Electronic Devices

Amorphous metal‐oxide semiconductors offer the high carrier mobilities and excellent large‐area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field‐induced oxygen migration across the ionic liquid‐semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. This study demonstrates the potential of field‐induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.     

Template‐Based Growth of Various Oxide Nanorods by Sol–Gel Electrophoresis

The ability to form oxide nanorods is of great interest in a number of areas. In this paper, we report the template‐based growth of nanorods of several oxide ceramics, formed by means of a combination of sol–gel processing and electrophoretic deposition. Both single metal oxides (TiO₂, SiO₂) and complex oxides (BaTiO₃, Sr₂Nb₂O₇, and Pb(Zr_0.52Ti_0.48)O₃) have been grown by this method. Uniformly sized nanorods of about 125–200 nm in diameter and 10 μm in length were grown over large areas with near unidirectional alignment. Desired stoichiometric chemical composition and crystal structure of the oxide nanorods was readily achieved by an appropriate procedure of sol preparation, with a heat treatment (700 °C for 15 min) for crystallization and densification.     

Three‐Dimensionally Ordered Gold Nanocrystal/Silica Superlattice Thin Films Synthesized via Sol–Gel Self‐Assembly

Nanocrystals and their ordered arrays hold many important applications in fields such as catalysis, surface‐enhanced Raman spectroscopy based sensors, memory storage, and electronic and optical nanodevices. Herein, a simple and general method to synthesize ordered, three‐dimensional, transparent gold nanocrystal/silica superlattice thin films by self‐assembly of gold nanocrystal micelles with silica or organosilsesquioxane by spin‐coating is reported. The self‐assembly process is conducted under acidic sol–gel conditions (ca. pH 2), ensuring spin‐solution homogeneity and stability and facilitating the formation of ordered and transparent gold nanocrystal/silica films. The monodisperse nanocrystals are organized within inorganic host matrices as a face‐centered cubic mesostructure, and characterized by transmission electron spectroscopy and X‐ray diffraction.     

Enhancement of Carrier Mobilities of Organic Semiconductors on Sol–Gel Dielectrics: Investigations of Molecular Organization and Interfacial Chemistry Effects

The dielectric‐semiconductor interfacial interactions critically influence the morphology and molecular ordering of the organic semiconductor molecules, and hence have a profound influence on mobility, threshold voltage, and other vital device characteristics of organic field‐effect transistors. In this study, p‐channel small molecule/polymer (evaporated pentacene and spin‐coated poly(3,3?;‐didodecylquarterthiophene) – PQT) and n‐channel fullerene derivative ({6}‐1‐(3‐(2‐thienylethoxycarbonyl)‐propyl)‐{5}‐1‐phenyl‐[5,6]‐C61 – TEPP‐C61) show a significant enhancement in device mobilities ranging from ～6 to ～45 times higher for all classes of semiconductors deposited on sol–gel silica gate‐dielectric than on pristine/octyltrichlorosilane (OTS)‐treated thermally grown silica. Atomic force microscopy, synchrotron X‐ray diffraction, photoluminescence/absorption, and Raman spectroscopy studies provide comprehensive evidences that sol–gel silica dielectrics‐induced enhancement in both p‐ and n‐channel organic semiconductors is attributable to better molecular ordering/packing, and hence reduced charge trapping centers due to lesser structural defects at the dielectric‐semiconductor interface.     

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Solution processing, including printing technology, is a promising technique for oxide thin‐film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high composition controllability and high throughput. However, solution‐processed oxide TFTs are limited by low‐performance and stability issues, which require high‐temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution‐processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low‐temperature (<350 °C) solution‐processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n‐type and p‐type oxide‐based channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low‐temperature solution‐processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.     

“Black” Titania Coatings Composed of Sol–Gel Imprinted Mie Resonators Arrays

Optical technologies and devices rely on the controlled manipulation of light propagation through a medium. This is generally governed by the inherent effective refractive index of the material as well as by its structure and dimensionality. Although a precise control over light propagation with sub‐wavelength size objects is a crucial issue for a plethora of applications, the widely used fabrication methods remain cumbersome and expensive. Here, a sol–gel dip‐coating method combined with nanoimprinting lithography on arbitrary glass and silicon substrates is implemented for the fabrication of TiO₂‐based dielectric Mie resonators. The technique allows obtaining sub‐micrometric pillars featuring unprecedented vertical aspect ratios (>1) with relatively high fidelity and precision. Spectroscopic characterization at visible and near‐infrared frequencies demonstrate that the resonant properties of these dielectric pillar arrays allow for a drastic reduction of light transmission (cutting more than 50% on glass) and reduced reflection (reflecting less than 3% on glass and 16% on bulk silicon), accounting for an efficient light trapping. These results provide a guideline for the fabrication of Mie resonators using a fast, versatile, low‐cost, low‐temperature technique for efficient light manipulation at the nanoscale.     

Effects of Interfacial Dielectric Layers on the Electrical Performance of Top‐Gate In‐Ga‐Zn‐Oxide Thin‐Film Transistors

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top‐gate In‐Ga‐Zn‐oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below 200°C, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as Si₃N₄ and Al₂O₃, the electrical properties are analyzed. After post‐annealing at 200°C for 1 hour in an O₂ ambient, the sub‐threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative‐bias stress tests on TFTs with a Si3N4 IDL, the degradation sources are closely related to unstable bond states, such as Si‐based broken bonds and hydrogen‐based bonds. From constant‐current stress tests of Id = 3 µA, an IGZO‐TFT with heat‐treated Si₃N₄ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge‐injection and electron‐trapping behavior.     

Load‐Controlled Roll Transfer of Oxide Transistors for Stretchable Electronics

A stretchable and transparent In‐Ga‐Zn‐O (IGZO) thin film transistors with high electrical performance and scalability is demonstrated. A load‐controlled roll transfer method is realized for fully automated and scalable transfer of the IGZO TFTs from a rigid substrate to a nonconventional elastomeric substrate. The IGZO TFTs exhibit high electrical performance under stretching and cyclic tests, demonstrating the potentiality of the load‐controlled roll transfer in stretchable electronics. The mechanics of the load‐controlled roll transfer is investigated and simulated, and it is shown that the strain level experienced by the active layers of the device can be controlled to well below their maximum fracture level during transfer.     

Tuning and Transcription of the Supramolecular Organization of a Fluorescent Silsesquioxane Precursor into Silica‐Based Materials through Direct Photochemical Hydrolysis–Polycondensation and Micropatterning

A new fluorescent silsequioxane precursor with tuned optical properties and controlled aggregation properties is designed. The two cyclohexyl moieties introduced in the molecular structure allow the formation of very good quality films. The J‐aggregated structure is transcribed into the solid by photoacid‐catalyzed hydrolysis–polycondensation. Aggregation of the chromophores is reduced and highly fluorescent materials are obtained. The photoacid generator lies on the surface of the homogeneous layer of the sol–gel precursor. This phase separation presents several advantages, including UV protection of the chromophore and easy removal of the PAG. The first example of chemical amplification in the photolithography of the conjugated silsesquioxane precursor is demonstrated. As hydrolysis–polycondensation could be achieved in a controlled way by UV exposure, chemically amplified photolithography is achieved by irradiating a composite film (～110 nm thick) on silicon wafer by using a copper TEM grid as shadow mask. The pattern is produced uniformly on a miscroscopic scale of 3 mm, the photopatterned pixels remaining highly fluorescent. The sizes of the photolithographed pixels correspond to the sizes of the rectangular holes of the 300 × 75 mesh grid (hole: 63 <$>μ<$>m × 204 <$>μ<$>m).     

Inside Front Cover: Three‐Dimensionally Ordered Gold Nanocrystal/Silica Superlattice Thin Films Synthesized via Sol–Gel Self‐Assembly (Adv. Funct. Mater. 7/2006)

The synthesis of three‐dimensionally ordered, transparent gold‐nanocrystal (NC)/silica superlattice thin films using the self‐assembly (by spin‐coating) of water‐soluble gold nanocrystal micelles and soluble silica is reported by Fan and co‐workers on p. 891. The robust, 3D NC/silica superlattice films are of interest for the development of collective optical and electronic phenomena, and, importantly, for the integration of NC arrays into device architectures. Nanocrystals and their ordered arrays hold many important applications in fields such as catalysis, surface‐enhanced Raman spectroscopy based sensors, memory storage, and electronic and optical nanodevices. Herein, a simple and general method to synthesize ordered, three‐dimensional, transparent gold nanocrystal/silica superlattice thin films by self‐assembly of gold nanocrystal micelles with silica or organosilsesquioxane by spin‐coating is reported. The self‐assembly process is conducted under acidic sol–gel conditions (ca. pH 2), ensuring spin‐solution homogeneity and stability and facilitating the formation of ordered and transparent gold nanocrystal/silica films. The monodisperse nanocrystals are organized within inorganic host matrices as a face‐centered cubic mesostructure, and characterized by transmission electron spectroscopy and X‐ray diffraction.     

A Facile Sol–Gel Strategy for the Synthesis of Rod‐Shaped Nanocrystalline High‐Surface‐Area Lanthanum Phosphate Powders and Nanocoatings

Synthesis of rod‐shaped nanocrystalline lanthanum phosphate with an average length of 40 nm even after calcination at 400 °C has been realized through a room‐temperature aqueous sol–gel process. The sol is characterized by particle‐size, zeta‐potential, and viscosity measurements. Gelation of the sol is induced by ammonia. The lanthanum phosphate phase‐formation process is followed by thermal, Fourier‐transform IR, and X‐ray diffraction analysis. Transmission electron microscopy shows that the sol and gel particles have a rod‐shaped morphology and comparable particle sizes. Using the Scherrer equation a crystallite size of 11 nm is obtained for the gel powder calcined at 400 °C and Brunauer–Emmett–Teller (BET) nitrogen‐adsorption analysis showed a high specific surface area of 100 m² g^–1. Ammonia temperature‐programmed desorption measurements show that the density of Lewis acid sites is four times higher than ever reported in the case of lanthanum phosphates. The catalytic activity of the above sample is demonstrated by using it as a Lewis‐acid catalyst in an acetal‐formation reaction with a very good yield of 85 %. The sol is used to develop nanocoatings on a glass surface and the morphology of the coatings is investigated using atomic force microscopy and scanning electron microscopy. The microstructure of the coating confirmed the rod‐shaped nature of the sol particles. The coating was uniform with a thickness of about 55 nm.     

All‐Solution‐Processed Indium‐Free Transparent Composite Electrodes based on Ag Nanowire and Metal Oxide for Thin‐Film Solar Cells

Fully solution‐processed Al‐doped ZnO/silver nanowire (AgNW)/Al‐doped ZnO/ZnO multi‐stacked composite electrodes are introduced as a transparent, conductive window layer for thin‐film solar cells. Unlike conventional sol–gel synthetic pathways, a newly developed combustion reaction‐based sol–gel chemical approach allows dense and uniform composite electrodes at temperatures as low as 200 °C. The resulting composite layer exhibits high transmittance (93.4% at 550 nm) and low sheet resistance (11.3 Ω sq^‐1), which are far superior to those of other solution‐processed transparent electrodes and are comparable to their sputtered counterparts. Conductive atomic force microscopy reveals that the multi‐stacked metal‐oxide layers embedded with the AgNWs enhance the photocarrier collection efficiency by broadening the lateral conduction range. This as‐developed composite electrode is successfully applied in Cu(In_1‐x,Ga_x)S₂ (CIGS) thin‐film solar cells and exhibits a power conversion efficiency of 11.03%. The fully solution‐processed indium‐free composite films demonstrate not only good performance as transparent electrodes but also the potential for applications in various optoelectronic and photovoltaic devices as a cost‐effective and sustainable alternative electrode.     

Role of Polymeric Metal Nucleation Inducers in Fabricating Large‐Area,Flexible, and Transparent Electrodes for Printable Electronics

The advent of special types of transparent electrodes, known as “ultrathin metal electrodes,” opens a new avenue for flexible and printable electronics based on their excellent optical transparency in the visible range while maintaining their intrinsic high electrical conductivity and mechanical flexibility. In this new electrode architecture, introducing metal nucleation inducers (MNIs) on flexible plastic substrates is a key concept to form high‐quality ultrathin metal films (thickness ≈ 10 nm) with smooth and continuous morphology. Herein, this paper explores the role of “polymeric” MNIs in fabricating ultrathin metal films by employing various polymers with different surface energies and functional groups. Moreover, a scalable approach is demonstrated using the ionic self‐assembly on typical plastic substrates, yielding large‐area electrodes (21 × 29.7 cm²) with high optical transmittance (>95%), low sheet resistance (<10 Ω sq^?1), and extreme mechanical flexibility. The results demonstrate that this new class of flexible and transparent electrodes enables the fabrication of efficient polymer light‐emitting diodes.     

React‐on‐Demand (RoD) Fabrication of Highly Conductive Metal–Polymer Hybrid Structure for Flexible Electronics via One‐Step Direct Writing or Printing

As a fast prototyping technique, direct writing of flexible electronics is gaining popularity for its low‐cost, simplicity, ultrahigh portability, and ease of use. However, the latest handwritten circuits reported either have relative low conductivity or require additional post‐treatment, keeping this emerging technology away from end‐users. Here, a one‐step react‐on‐demand (RoD) method for fabricating flexible circuits with ultralow sheet resistance, enhanced safety, and durability is proposed. With the special functionalized substrate, a real‐time 3D synthesis of silver plates in microscale is triggered on‐demand right beneath the tip in the water‐swelled polyvinyl alcohol (PVA) coating, forming a 3D metal–polymer hybrid structure of ≈7 µm with one single stroke. The as‐fabricated silver traces show an enhanced durability and ultralow sheet resistance down to 4 mΩ sq^?1 which is by far the lowest sheet resistance reported in literatures achieved by direct writing. Meanwhile, PVA seal small particles inside the film, adding additional safety to this technology. Since neither nanomaterials nor a harsh fabrication environment are required, the proposed method remains low cost, user friendly, and accessible to end users. With little effort, the RoD approach can be extended to various printing systems, offering a particle‐free, sintering‐free solution for high‐resolution, high‐speed production of flexible electronics.     

A Novel Conductive Core–Shell Particle Based on Liquid Metal for Fabricating Real‐Time Self‐Repairing Flexible Circuits

As a critical part of flexible electronics, flexible circuits inevitably work in a dynamic state, which causes electrical deterioration of brittle conductive materials (i.e., Cu, Ag, ITO). Recently, gallium‐based liquid metal particles (LMPs) with electrical stability and self‐repairing have been studied to replace brittle materials owing to their low modulus and excellent conductivity. However, LMP‐coated Ga₂O₃ needs to activate by external sintering, which makes it more complicated to fabricate and gives it a larger short‐circuit risk. Core–shell structural particles (Ag@LMPs) that exhibit excellent initial conductivity(8.0 Ω sq^?1) without extra sintering are successfully prepared by coating nanosilver on the surface of LMPs through in situ chemical reduction. The critical stress at which rigid Ag shells rupture can be controlled by adjusting the Ag shell thickness so that LM cores with low moduli can release, achieving real‐time self‐repairing (within 200 ms) under external destruction. Furthermore, a flexible circuit utilizing Ag@LMPs is fabricated by screen printing, and exhibits outstanding stability and durability (R/R₀ < 1.65 after 10 000 bending cycles in a radius of 0.5 mm) because of the functional core–shell structure. The self‐repairable Ag@LMPs prepared in this study are a candidate filler for flexible circuit design through multiple processing methods.     

Stoichiometry Control for the Tuning of Grain Passivation and Domain Distribution in Green Quasi‐2D Metal Halide Perovskite Films and Light‐Emitting Diodes

Quasi‐2D metal halide perovskite films are promising for efficient light‐emitting diodes (LEDs), because of their efficient radiative recombination and suppressed trap‐assisted quenching compared with pure 3D perovskites. However, because of the multidomain polycrystalline nature of solution‐processed quasi‐2D perovskite films, the composition engineering always impacts the emitting properties with complicated mechanisms. Here, defect passivation and domain distribution of quasi‐2D perovskite films prepared with various precursor compositions are systematically studied. As a result, in perovskite films prepared from stoichiometric quasi‐2D precursor compositions, large organic ammonium cations function well as passivators. In comparison, precursor compositions of simply adding large organic halide salt into a 3D perovskite precursor ensure not only the defect passivation but also the effective formation of quasi‐2D perovskite domains, avoiding unfavorable appearance of low‐order domains. Quasi‐2D perovskite films fabricated with a well‐designed precursor composition achieve a high photoluminescence quantum yield of 95.3% and an external quantum efficiency of 14.7% in LEDs.