A scale mixer model for sis waveguide receivers

We report results from measurements of a scale mixer model, built to investigate the embedding impedance presented to a superconductor-insulator-superconductor (SIS) tunnel junction detector in a full height waveguide with two tuning elements. The embedding impedance is measured as a function of junction position across the waveguide channel. The results are compared to i) computer simulations of the embedding impedance using waveguide theory, ii) a lumped element circuit derived from the theory, iii) an SIS receiver operating between 200 and 280 GHz.     

Some recent developments in the design of SIS mixers

SIS mixers in which superconducting tuning elements are integrated with the tunnel junctions have resulted in very low noise heterodyne receivers in the range 68–260 GHz. Above 120 GHz the need for extremely small reduced-height waveguides is avoided by mounting the SIS junctions in a suspended-stripline circuit coupled to a full-height waveguide by a broadband probe. The special characteristics of coplanar transmission line permit the design of SIS mixers with low parasitic reactances. Such a mixer operates over the full WR-10 band (75–110 GHz) without mechanical tuners.An earlier version of this paper was presented at the First International Symposium on Space THz Technology, March, 1990.The National Radio Astronomy Observatory is operated by Associated Universities, Inc., under cooperative agreement with the National Science Foundation.     

Simulated performance and model measurements of an SIS waveguide mixer using integrated tuning structures

A three-port approximation of the quantum mixer theory is employed to perform mixer gain calculations at 230 GHz for SIS junctions with integrated tuning structures. In addition, the embedding impedance range of a waveguide mixer mount has been obtained from model measurements and has been included in the gain calculations. The results show that even moderately small junctions can perform well in a waveguide environment when an integrated tuning structure is used. A three-element tuning circuit is presented that would allow broad band operation with a fixed embedding impedance which is important for applications using a planar antenna structure.     

Adjustable tuning for planar millimeter-wave circuits

At millimeter wavelengths uncontrollable parasitics are of ten large enough to significantly degrade circuit performance when they are not compensated by adjustable elements. It is difficult to add adjustable elements to planar millimeter-wave circuits without increasing their size, weight, and cost. In this paper we investigate three adjustable elements, all involving movement of a short along a section of coplanar waveguide (CPW). These tuners are incorporated in a planar detector circuit for purposes of demonstration and characterization. Their losses are determined. The precision with which they can be adjusted is also considered. Of the three, a tuner based on the laser-assisted etching of molybdenum is shown to have the highest performance at millimeter wavelengths. This tuner employs laser direct write etching¹ with a recently developed photochemical reaction for trimming molybdenum.University of California, Berkeley Berkeley, California 94720M.I.T. Lincoln Laboratory 244 Wood St. Lexington, Massachusetts 0217     

Dual-band high impedance surface with graphene-based metasurfaces

High impedance surface (HIS) is an electromagnetic band gap (EBG) material that shows magnetic conductor surface properties within its band gap frequencies. The operation bandwidth is corresponding to the frequency range, where the reflection phase varies between +90^∘ and −90^∘. In this paper, a dual-band HIS is investigated based on planar periodic graphene arrays placed on a grounded dielectric substrate. Analytical circuit model of the graphene array together with the transmission line theory is employed to analyze the proposed structure. We demonstrate that the HIS bands can be adjusted by tuning the geometrical parameters of the structure and the Fermi level of graphene. The graphene-based HIS promises future applications in the low-profile, high gain and high efficiency antennas at THz frequencies.     

Frequency tuned carbon monoxide waveguide laser with rf pumping

The results of the investigation of a rf-discharge-excited sealed-off CO waveguide laser with a selective resonator are reported. The operation on more than 40 vibration-rotation transitions of a CO molecule has been obtained in a laser having a square section (Al/BeO) waveguide with dimensions of 1.5×1.5×180 mm. Maximum frequency tuning of 550 MHz with output power of 0.5 W at line centre has been observed on theP _10–9(17) transition at –20°C ground electrode temperature at a pressure of 180 Torr.     

Impedance and complex propagation constant measurements at W-band on planar circuits

The voltage standing wave on a coplanar waveguide (CPW) is measured at W-band (75–110 GHz) using an array of bismuth microbolometers placed over the CPW. From this information, the impedance at the end of the line can be determined in addition to the complex propagation constant of the CPW. This measurement technique should also be applicable for other planar transmission lines and be extendable above 110 GHz. This work represents the highest frequency, direct measurement of a VSW on a CPW made to date.     

Design of Millimeter-Wave Power Divider with Coupled Line

A novel 35GHz 3dB power divider using coupled transmission line is presented. Unlike conventional Wilkinson divider circuit, only the 50 transmission lines are used in the design. The impedance matching can be achieved by coupled transmission line even mode characteristic impedance. The predicated and measured performances agree well.     

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

An Al Ga N/Ga N high electron mobility transistor(HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency(RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V g, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector.     

Design Consideration for a Two-Distributed-Junction Tuning Circuit

We describe a novel method of designing a tuning circuit with two half-wave distributed junctions separated by a half-wavelength microstripline, which analytically determines the circuit parameters such as the minimum current density of the junctions and the characteristic impedances of the distributed junctions and the microstripline. The tuning circuit was approximated by simple transmission theory and then simplified with ideal circuit components for analysis. We applied Chebyshevs band-pass filter theory, in part, to optimize the circuit design. The analytical results revealed that a high characteristic-impedance ratio between the distributed junctions and the microstripline is necessary to obtain broadband matching using low-current-density junctions. The experimental results for all-NbN SIS mixers we designed with this method demonstrated double-sideband (DSB) receiver-noise temperatures of 6–10 quanta from 710 to 810 GHz for a mixer with a current density of only 4 kA/cm² (estimated C_JR_N product of 37 at 750 GHz). The RF bandwidth was broader than that of a conventional full-wave distributed SIS mixer with the same current density.     

230 and 492 GHz low noise sis waveguide receivers employing tuned Nb/AlOx/Nb tunnel junctions

We report results on two full height waveguide receivers that cover the 200–290 GHz and 380–510 GHz atmospheric windows. The receivers are part of the facility instrumentation at the Caltech Submillimeter Observatory on Mauna Kea in Hawaii. We have measured receiver noise temperatures in the range of 20K–35K DSB in the 200–290 GHz band, and 65–90K DSB in the 390–510 GHz atmospheric band. In both instances low mixer noise temperatures and very high quantum efficiency have been achieved. Conversion gain (3 dB) is possible with the 230 GHz receiver, however lowest noise and most stable operation is achieved with unity conversion gain.A 40% operating bandwidth is achieved by using a RF compensated junction mounted in a two-tuner full height waveguide mixer block. The tuned Nb/AlO _x /Nb tunnel junctions incorporate an end-loaded tuning stub with two quarter-wave transformer sections to tune out the large junction capacitance. Both 230 and 492 GHz SIS junctions are 0.49µm² in size and have current densities of 8 and 10 kA/cm² respectively.Fourier Transform Spectrometer (FTS) measurements of the 230 and 492 GHz tuned junctions show good agreement with the measured heterodyne waveguide response.     

Analysis and modeling of a high-temperature superconducting floating resonant strip in waveguide

A two-gap floating resonant strip is used for characterization of the high-temperature superconductor, YBa₂Cu₃O_7–. The method has the advantages of simplicity, no electrical contact, operation at various resonant frequencies, and of requiring only a small sample. An analysis was devised that allows for the accurate design of the strip dimensions to produce a desired resonant frequency. Experimental measurements in X and Kuband (8–18 GHz) agree well with the calculations. The sensitivities of the circuit to positional errors and size variations of the resonant strip were investigated. The surface resistance was measured and compared favorably with the theory.     

A novel noncontacting waveguide backshort for submillimeter wave frequencies

A novel noncontacting waveguide backshort has been developed for millimeter wave and submillimeter wave frequencies. It employs a metallic bar with rectangular or circular holes. The size and spacing of the holes are adjusted to provide a periodic variation of the guide impedance on the correct length scale to give a large reflection of rf power. This design is mechanically rugged and can be readily fabricated for high submillimeter wave frequencies where conventional backshorts are difficult or impossible to fabricate. Model experiments have been performed at 4 GHz – 6 GHz to empirically optimize the design parameters. Values of reflected power greater than 95% over a 30% bandwidth have been achieved. A specific design is presented which has also been successfully scaled to WR-10 band (75 GHz – 110 GHz). A theoretical analysis is compared to the experiments and found to agree well with the measured data.     

Solid state monolithic variable phase shifter with operation into the millimeter wave wavelength regime

Information is provided on the theory and design, fabrication, and experimental results for a phase shifter designed to operate in the millimeter wavelength region. The device was fabricated in a manner that makes it compatible with present GaAs monolithic microwave circuit technology. Continuously variable phase shift is obtained by varying the bias voltage from –5.0 to +0.65 V on a Schottky microstrip line. Experimental phase shift and loss data are provided for two different width (w) Schottky lines, w=1.5 and 7.3 m, for frequencies 2–18 GHz.     

Planar microwave biased RF-SQUIDs in niobium technology

A planar version of microwave biased SQUIDs is described. In this type of SQUID, a superconducting half-wavelength microstrip resonator serves as tank circuit, into which the SQUID is integrated. For evaluation of this type of SQUID, samples were prepared from thin Nb films on sapphire substrates, using tunnel junctions as Josephson elements. When operated in hysteretic mode, signal voltages of up to 80 V were achieved, corresponding to a flux noise of 4×10^–6 ₀/Hz and an energy resolution of 2×10^–31 J/Hz.     

Surface emitting characteristics of silicon waveguides

This paper concerns the surface emitting characteristics of silicon waveguides in the millimeter-wave frequency band. The waveguides used in the experiment are rectangular slabs of high resistivity silicon (30,000 ohm-cm). A series of periodic perturbations on the waveguide surface provide a radiating antenna. A rectangular grating with a period of =1.8 mm, a height of 0.35 mm, and a duty cycle of 0.46 was sawn into the top surface of a silicon waveguide with a width of 3 mm and a height of 1.41 mm. Experiments were performed to measure the attenuation, dispersion and the radiation characteristics of the waveguides. The test setup was used to monitor the frequency, radiation angle, and the radiated power. Measurements are made over a band of frequencies around the second Bragg frequency. The detector was scanned from 88–95 GHz and changes were observed in the attenuation constant, dispersion relation and the far field radiation pattern. From these results we were able to verify the grating theory.Supported in part by the Army Research Office.     

Optical pumping by CO2 and N2O lasers: New cw FIR emissions in vinyl cyanide

A systematical study of optical pumping by CO₂ and N₂O lasers using a FIR metallic waveguide has been undertaken in vinyl cyanide. 97 new FIR laser lines are reported in the wavelength range 400 m–1,5 mm.Unité associée au CNRS (UA 836).     

Experimental investigation of millimeter wave Gunn oscillator circuits in circular waveguides

Millimeter wave Gunn oscillator circuits using circular waveguides for 33–50 GHz and 75–110 GHz frequency bands are described. These oscillators are simpler to construct at millimeter wavelengths compared to the conventional rectangular waveguide circuits. The effect of various circuit parameters on the oscillator frequency and output power has been experimentally studied. The CW power and mechanical tuning range obtained from the circular waveguide Gunn oscillators are found to be comparable and sometimes even better than those obtained with conventional rectangular waveguide circuits using the same Gunn device.     

Left-handed-media simulation and transmission of EM waves in subwavelength split-ring-resonator-loaded metallic waveguides

At microwave frequencies, hollow metallic waveguides behave in certain aspects as a "one-dimensional plasma." This feature will be advantageously used for simulating the propagation of electromagnetic (EM) waves in left-handed metamaterials provided the hollow waveguide is periodically loaded with split ring resonators. It will be shown that EM transmission in this structure is feasible within a certain frequency band even if the transverse dimensions of the waveguide are much smaller than the associated free-space wavelength. This effect can be qualitatively and quantitatively explained by the left-handed metamaterial theory, thus providing a new experimental validation for such a theory.