C-BN电子输运特性的Monte Carlo模拟

根据C-BN的能带结构和极性半导体的具体特征,确立了C-BN的主要散射机构,建立了适于Monte Carlo模拟的物理模型,采用单电子Monte Carlo法对C-BN体材的稳态电子输运特性进行了模拟.得出了电子的平均漂移速度、迁移率和电子能量随电场的变化规律,及电子的能量、动量弛豫时间随电场的变化规律. 关键词：     

电子温度对霍尔推进器等离子体鞘层特性的影响

采用二维粒子模拟方法研究了霍尔推进器通道中电子温度对等离子体鞘层特性的影响, 讨论了不同电子温度下电子数密度、鞘层电势、电场及二次电子发射系数的变化规律. 结果表明: 当电子温度较低时, 鞘层中电子数密度沿径向方向呈指数下降, 在近壁处达到最小值, 鞘层电势降和电场径向分量变化均较大, 壁面电势维持一稳定值不变, 鞘层稳定性好; 当电子温度较高时, 鞘层区内与鞘层边界处电子数密度基本相等, 而在近壁面窄区域内迅速增加, 壁面处达到最大值, 鞘层电势变化缓慢, 电势降和电场径向分量变化均较小, 壁面电势近似维持等幅振荡, 鞘层稳定性降低; 电子温度对电场轴向分量影响较小; 随电子温度的增大, 壁面二次电子发射系数先增大后减少. 关键词： 霍尔推进器 等离子体鞘层 电子温度 粒子模拟     

微腔等离子体放电过程的数值研究

采用2维自洽完全流体模型,数值研究了阳极为通孔的高气压微腔放电结构中等离子体参数的变化过程。模拟结果获得了当氩气压强为13.3 kPa时,放电中的电势分布、等离子体密度分布、径向电场分布和电子温度分布等重要参数的演化过程。模拟结果表明在放电过程中,阴极附近的电场由轴向电场逐步转变为径向电场,等离子体密度最大值位于放电腔中间处,并随时间推移由阳极附近向阴极附近移动,电子温度的最大值出现在阴极环形鞘层区域。     

N2介质阻挡放电中有效电场的光谱测定

采用蒙特卡罗方法，模拟了N2非平衡态直流放电等离子体过程。计算了不同E／N条件下电子在氮气中的漂移速度，结果与实验数据符合得很好。模拟了电子激发态粒子数随E／N的变化关系。提出在介质阻挡放电研究和应用中，通过监测两条紫外谱线145和201nm强度之比来监测有效电场的方法。     

铁磁材料GdN的电子结构和磁学性质的理论研究

作为寻找新型自旋电子学功能材料的尝试，文章详细研究了稀土化合物GdN的电子结构和磁学性质，通过第一性原理的理论计算，作者发现该材料的导电性质随体积增加有很大变化：从半金属态到准金属态，最后成为半导体．同时，施加压力能改变其载流子浓度和位于多数自旋态的电子和空穴的迁移率．对其磁交换参数随品格常数变化的进一步研究和蒙特卡罗模拟表明，这个铁磁体系的居里温度可以通过加压或掺杂得到进一步提高，从而成为很有实用价值的自旋电子材料．     

射频感应耦合Ar-N2等离子体物理特性的Langmuir探针测量及理论研究

分别通过Langmuir探针测量和动力学模型模拟方法研究了射频感应耦合Ar-N2等离子体中电子能量分布、电子温度、电子密度等物理量随N2含量的变化规律.实验研究结果表明:电子能量分布呈现出非Maxwell型分布,并由双温分布向三温分布过渡;电子温度在不同的气压下随N2含量的增加呈现出不同的变化规律.在放电气压小于1.3 Pa时,电子温度随N2含量的增加而下降;当气压大于1.3 Pa时,电子温度随N2含量的增加先迅速上升而后缓慢下降.在不同的放电气压下,电子密度随N2含量的增加迅速下降.数值模拟结果与Langmuir探针测量结果趋势一致.     

卫星中介质深层充电特征研究

介质深层充电效应是诱发地球同步轨道卫星运行故障和异常的重要因素之一.通过数值模拟方法对卫星介质材料中充电所致最大电场与高能电子能谱、介质厚度，及屏蔽厚度等的关系进行了详细研究，给出了介质中最大电场的基本特征. 关键词： 卫星 介质深层充电 高能电子 计算机模拟     

基于流体动力学模型的2维砷化镓金属半导体场效应管数值模拟

 介绍了用于描述工作在高频强电场条件下的亚微米半导体器件的流体动力学模型,并讨论了为求解流体动力学模型所采用的算子分裂方法和有限体积法。使用流体动力学模型,对亚微米GaAs金属半导体场效应管器件进行了2维数值模拟,得到了该器件的I-V曲线、电子密度分布和电子温度分布。数值模拟结果表明,器件栅极电压越负,肖特基结的耗尽层越厚,源漏电流越小;在耗尽层内电场最强处,电子温度达到4 000 K;在强电场下,电子温度将严重偏离晶格温度,形成所谓热电子。     

临界温度左右高温超导体场发射电子能谱研究

本文研究了临界温度以上电场穿透发射体表面对高温超导体的场致发射电子能谱随温度变化的影响和临界温度以下能隙对场发射电子能谱影响的情况．并对理论计算的结果与实验结论做了比较．     

高功率微波介质窗表面电子倍增二维粒子模拟

基于第一性原理的粒子模拟方法,对高功率微波器件中介质窗表面电子实际形成和发展的变化情况进行了研究。使用VORPAL粒子模拟软件,建立一个简单的TEM波垂直入射介质窗表面的二维模型,采用Vaughan二次电子发射模型,利用蒙特卡罗碰撞方法处理电子与背景气体之间的弹性碰撞、激发碰撞和电离碰撞,获得了介质窗表面电子倍增的图像。模拟结果表明,介质窗表面电子数量在一定的时间内达到饱和状态,其振荡频率是入射射频电场频率的两倍。改变初始发射种子电子的数量、入射射频电场的幅值以及背景气体的压强等关键性参数,可得到不同条件下介质窗表面电子数量的变化规律。     

晶格匹配InAlN/GaN和InAlN/AlN/GaN材料二维电子气输运特性研究

文章研究了InAlN/GaN和引入AlN界面插入层形成的InAlN/AlN/GaN材料的输运性质. 样品均在蓝宝石上以脉冲金属有机物化学气相淀积法生长,霍尔迁移率变温特性具有典型的二维电子气(2DEG)特征. 综合各种散射机理包括声学形变势散射、压电散射、极性光学声子散射、位错散射、合金无序散射和界面粗糙度散射,理论分析了温度对迁移率的影响,发现室温下两种材料中2DEG支配性的散射机理都是极性光学波散射和界面粗糙度散射;AlN插入层对InAlN/GaN材料迁移率的改善作用一方面是免除2DEG的合金无序散射,另外还显著改善异质界面,抑制了界面粗糙度散射. 考虑到2DEG密度也是影响其迁移率的重要因素,结合实验数据给出了晶格匹配InAlN/GaN和InAlN/AlN/GaN材料的2DEG迁移率随电子密度变化的理论上限. 关键词： InAlN/GaN 二维电子气 迁移率     

SiC/SiO_2界面粗糙散射对沟道迁移率影响的Monte Carlo研究

提出了一种SiC反型层表面粗糙散射的指数模型 ,并对 6H SiC反型层迁移率进行了单电子的MonteCarlo模拟 ,模拟中考虑了沟道区的量子化效应 .模拟结果表明 ,采用表面粗糙散射的指数模型能够使SiC反型层迁移率的模拟结果和实验值符合得更好 .模拟结果还反映出有效横向电场较高时表面粗糙散射的作用会变得更显著 ,电子的屏蔽效应降低了粗糙散射对沟道迁移率的影响 ,温度升高会引起沟道迁移率降低 .     

SiC/SiO2界面粗糙散射对沟道迁移率影响的Monte Carlo研究

提出了一种SiC反型层表面粗糙散射的指数模型,并对6H-SiC反型层迁移率进行了单电子的Monte Carlo模拟,模拟中考虑了沟道区的量子化效应.模拟结果表明,采用表面粗糙散射的指数模型能够使SiC反型层迁移率的模拟结果和实验值符合得更好.模拟结果还反映出有效横向电场较高时表面粗糙散射的作用会变得更显著,电子的屏蔽效应降低了粗糙散射对沟道迁移率的影响,温度升高会引起沟道迁移率降低. 关键词： 6H-SiC 反型层迁移率 表面粗糙散射 指数模型     

含双圆柱亚表面缺陷板条材料的表面温度分布

基于非傅里叶热传导方程,采用复变函数法和镜像法,研究了含双圆柱亚表面缺陷板条材料热波散射的温度场,并给出了热波散射温度场的解析解。分析了入射波波数、热扩散长度、缺陷的埋藏深度以及板条材料的厚度等对板条表面温度分布的影响。温度波由调制光束在材料表面激发,缺陷表面的边界条件为绝热。该分析方法和数值结果可为工程材料结构的传热分析、热波成像和材料内部缺陷评估,以及热物理反问题研究提供参考。     

Effects of non-equilibrium polar optic phonons and the band non-parabolicity on small signal high-frequency hot electrons ac mobility in narrow gap semiconductors in high magnetic fields

The small signal high-frequency ac mobility of hot electrons in n-HgCdTe in the extreme quantum limit at low and high temperatures have been calculated considering the non-equilibrium phonon distribution as well as the thermal phonon distribution .The energy loss rate has been calculated considering only optical phonon scattering while the momentum loss rate has been calculated considering acoustic phonon scattering and piezoelectric scattering together with polar optical phonon scattering and separately considering only the polar optical scattering. The results have been discussed and compared. It has been observed that at 20 K, the normalized mobility considering all the three scattering mechanisms differs appreciably from that considering only the polar optical phonon scattering. However, at 77 K, there is no difference in the normalized mobility. This establishes the fact that at higher temperature, the effect of acoustic phonon scattering and piezoelectric coupling is negligible, compared to the polar optical phonon scattering. So the ac mobility considering only polar optical phonon scattering has been studied at 77 and 20 K. The ac mobility is found to remain constant up to 100 GHz and thereafter it started decreasing at higher frequencies at 77 K whereas the ac mobility reduces at much lower frequencies at lower temperature at lower field. The non-parabolicity of the band structure enhances the normalized mobility.     

Hot electrons in nonparabolic bands with acoustic and polar optical phonon scattering

Most compound semiconductors have nonparabolic energy bands, and in pure material the dominant scattering mechanisms are usually by acoustic and polar optical phonons. In this paper, general expressions for the high-field transport properties of such materials are derived, using the balance-of-energy method and assuming a drifted Maxwellian distribution function. Under certain conditions the resultant drift velocity-field curves show a single-band negative differential resistance, arising not only from the increase in effective mass with carrier energy, but also from the change in relative scattering efficiencies of the two mechanisms as the applied field is increased. This effect is more marked at low temperatures. The model gives good agreement with previously reported experimental results on n-type PbTe at 77°K.     

Crystal field effects in the resistivity of the singlet ground state PrIn3 compound

Results of the experimentally found temperature dependence of the magnetic resistivity for PrIn₃ are compared with theoretical data for two possible scattering mechanisms. A good quantitative agreement between theory and experiment is observed at low temperature region in the case of the pure crystal field effected exchange scattering.     

The contribution of edge-dislocation dipoles to lattice thermal resistivity in deformed lithium fluoride

An estimate is made of the thermal resistivity arising from phonon scattering by the static strain fields of edge-dislocation dipoles in lithium flouride, the dynamic scattering from which was recently studied by Kneezel and Granato (1980). The strain field scattering is shown to be increasingly important as the temperature increases above 2 K. This is consistent with the results of Kneezel and Granato. The static and dynamic mechanisms are shown to complement each other so that the total scattering from dipoles is consistent with the experimental data of Roth and Anderson (1979) from 0.1 to 9 K.     

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.     

Effect of electrostatic screening due to non-equilibrium carriers on the lattice scattering rate at low temperatures

The intravalley acoustic scattering rate has been calculated here taking the screening by non-equilibrium electrons into account under the condition when the lifetime of the electrons is controlled by shallow attractive traps at low lattice temperature. The scattering rates now turn out to be field dependent and the characteristics are significantly different from what follows when the electron ensemble is in equilibrium with the lattice. The results indicate the possibility of interesting non-ohmic transport characteristics under these conditions. Numerical results are obtained for high purity samples of Si.