量子细胞神经网络的超混沌特性研究

研究了由量子点细胞自动机构成的量子细胞神经网络的非线性动力学特性.以量子点细胞的极化率和量子相位作为状态变量，对3个细胞耦合的量子细胞神经网络进行了理论分析和计 算机仿真研究.结果表明，该网络系统呈现复杂的混沌动力学行为，混沌振荡产生非常容易. 由数值计算得到的两个最大正Lyapunov指数证实了该系统具有超混沌特性. 关键词： 量子点细胞自动机 极化率 量子细胞神经网络 超混沌     

Elementary quantum-dot gates for single-electron computing

A new approach to the implementation of certain logical functions in quantum-dot gates for single-electron computing is proposed. It is shown that placing a gate in a uniform external magnetic field allows one to construct gates with 1) symmetric physical truth tables and 2) large (in some cases close to saturated) absolute magnitude of the average spin at the output dots. Thus two serious obstacles are removed which otherwise could present a problem in the fabrication of a set of coupled quantum-dot gates. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 3, 214–218 (10 August 1996) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Realization of quantum-dot cellular automata using semiconductor quantum dots

We demonstrate that a quantum-dot cellular automata device can be fabricated using electron beam lithographically defined gates on GaAs/AlGaAs heterostructure materials, and that by tuning the four quantum dot (J. Phys. C: Solid State Phys. 21 (1988) L893) system polarization of one double dot can lead to polarization in the neighboring double dot (Phys. Rev. B 67 (2003) 033302). The polarization is detected using a 1-D or 0-D channel defined next to one pair of double dots which acts as a non-invasive voltage probe (Phys. Rev. Lett. 70 (1993) 1311). Ultimately a cellular automata device should be isolated from reservoirs to prevent charge fluctuations caused by co-tunneling. The non-invasive voltage probe is used to show that coupled double dots isolated from reservoirs can be made to have a sharper polarization transition. By studying the broadening of the polarization signal from a coupled double dot system isolated from reservoirs, we deduce the charge dephasing times for intra dot scattering to be more than 0.2 ns (Phys. Rev. B 67 (2003) 073302).     

Correlated electrons in coupled quantum dots and related phenomena

Three topics related to correlated electrons in coupled quantum dots are discussed. The first is quasi-resonance between multi-electron states, which causes hitherto unremarked types of resonant absorption in coupled quantum dots. The second is electron tunneling through a Hubbard gap, which is induced by an increase in the density of electrons in a quantum-dot chain under an overall confining potential. The third is Mott transition in a two-dimensional quantum-dot array induced by an external electric field. In this system, the metal-insulator transition goes through a heavy electron phase in which the density of correlated electrons fluctuates.     

Optimal control of charge with local gates in quantum-dot lattices

Semiconductor quantum dots are among the leading candidates for next-generation nanoscale devices due to their tunable size, shape, and low energy consumption. Here we apply quantum optimal control theory to coherently manipulate the single-electron charge distribution in quantum-dot lattices of various sizes. In particular, we show that to control the charge distribution it is sufficient to optimize the gate voltage acting on a single quantum dot in the lattice. We generally find yields around 99% in the picosecond time scale when using realistic models for the quantum-dot lattices on a real-space grid. We analyze and discuss both the limitations of the model regarding the gate parameters as well as the potential of the scheme for applications as quantum-dot cellular automata.     

磁场方向调制的InAs量子点分子量子比特

在有效质量近似条件下研究了由两个垂直耦合自组织InAs量子点组成的双电子量子点分子的电子结构，在此基础上利用系统的总自旋提出了一种磁场方向调制的量子比特方案.电子的相关效应可以导致系统的总自旋在0和1之间转换，值得注意的是，通过调节外部磁场的方向来实现这种转换，而不是像以往那样通过改变外部磁场的大小.结果支持利用系统的总自旋作为磁场方向调制的量子比特的可能性，而且因为高质量的垂直耦合量子点分子的制作工艺已经成熟，所以这是一个非常现实的量子比特设计方案. 关键词： 量子点分子 磁场方向调制 量子比特     

Electronic states and vibration spectra of CdTe/ZnTe quantum dot superlattices

Electronic and vibrational states in CdTe/ZnTe quantum dot superlattices are studied using optical spectroscopy techniques (photoluminescence in a wide temperature range, IR reflection, and Raman scattering). The effect of the ZnTe barrier layer thickness on the luminescence spectra of the structures is discussed. The luminescence from electronically coupled islands is assumed to be due to spatially indirect excitons because of the specific features of the CdTe/ZnTe heterostructure band structure. A combination of quantum-dot vibrational modes, which has not been observed earlier, is detected in the Raman spectra. Analysis of the lattice IR reflection spectra shows that, in the case of large barrier thicknesses between the quantum-dot planes, elastic stresses are concentrated in the Zn_1?xCd_xTe layers, whereas in structures with lower barrier thicknesses the elastic-strain distribution exhibits a more complicated pattern.     

Study on the coupled multiple nanocrystal quantum-dot system

We have studied excess electron filling rule in the coupled multiple nanocrystal quantum-dot systems, i.e. quantum chain and quantum pattern, by the unrestricted Hartree–Fock–Roothaan method. Assuming each quantum dot of quantum pattern to be confined in a three-dimensional spherical potential well of finite depth, we have studied the intradot and interdot electron Coulomb and exchange interactions. By varying the center distance d between the coupled quantum dots, the transition from the strong- to weak-coupling situation is realized. For the systems in question, our results show that, with the filling of excess electrons into the quantum pattern, the corresponding chemical potentials form quasi-band structure, which is similar to the energy-band structure of crystal material. In each chemical-potential band of quantum pattern, the number of chemical-potential curves is equal to the number of quantum dots, and the distributions of them depend strongly on the quantum-dot arrangement structure of quantum pattern.     

Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers

Small signal modal gain measurements have been performed on two-section ridge waveguide InAs/InP (100) quantum-dot amplifiers that we have fabricated with a peak gain wavelength around 1.70 μm. The amplifier structure is suitable for monolithic active-passive integration, and the wavelength region and wide gain bandwidth are of interest for integrated devices in biophotonic applications. A 65 nm blue shift of the peak wavelength in the gain spectrum has been observed with an increase in injection current density from 1,000 to 3,000 A/cm². The quantum-dot amplifier gain spectra have been analyzed using a quantum-dot rate-equation model that considers only the carrier dynamics. The comparison between measured and simulated spectra shows that two effects in the quantum-dot material introduce this large blue shift in the gain spectrum. The first effect is the carrier concentration dependent state filling with carriers of the bound excited and ground states in the dots. The second effect is the decrease in carrier escape time from the dots to the wetting layer with decreasing dot size.     

Deterministic Entanglement Purification of the Greenberger-Horne-Zeilinger States in Quantum-Dot and Micro-cavity Coupled System

An improved purification of the triplet Greenberger-Horne-Zeilinger (GHZ) state is demonstrated for the electron-spin-entangled state in the quantum-dot (QD) and micro-cavity coupled systems. In order to distill the maximally entangled GHZ state efficiently, we designate a deterministic entanglement purification protocol (EPP) by using a pair of the triplet-electron-spin-entangled systems. It is based on the elegant parity-check operations performed in the cavity-spin-coupling system with the assistance of an ancillary single photon. With the current and feasible technology, the maximally entangled GHZ states can be achieved as much as flexible for the long-distance quantum communications since only single-photon detection and single-electron detection are required in practice.     

Quantum-dot structures measuring Hamming distance for associative memories

Two types of quantum-dot circuits measuring a Hamming distance using the Coulomb repulsion effect are proposed and analysed. They have structures where a quantum-dot array is arranged on a gate electrode of an ultrasmall MOSFET. The device parameters for successful operation are clarified from Monte Carlo simulation.     

Electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates

We present atomistic theory of electronic and optical properties of a single InAs quantum dot grown on a pyramidal InP nanotemplate. The shape and size of the dot is assumed to follow the nanotemplate shape and size. The electron and valence hole single particle states are calculated using atomistic effective–bond–orbital model with second nearest-neighbor interactions. The electronic calculations are coupled to separately calculated strain distribution via Bir–Pikus Hamiltonian. The optical properties of InAs dots embedded in InP pyramids are calculated by solving the many-exciton Hamiltonian for interacting electron and hole complexes using the configuration–interaction method. The effect of quantum-dot geometry on the optical spectra is investigated by a comparison between dots of different shapes.     

Optical spectroscopy of CdTe/ZnTe quantum-dot superlattices

Studies of CdTe/ZnTe quantum-dot superlattices (self-assembled quantum-dot multilayers) have been carried out by optical spectroscopy methods in a wide range of temperatures. It has been shown that the ZnTe spacer layer thickness affects the properties of these quantum-dot superlattices due to changes in the elastic strain distribution pattern. An additional luminescence band appearing in the spectrum of the structure with the thinnest ZnTe spacer layer exhibits an anomalous shift of the peak position and an unusual behavior of integral intensity with the temperature increase. We assume that the spectrum of CdTe/ZnTe quantum-dot superlattices with the thinnest ZnTe spacer is caused by two kinds of excitonic states—spatially indirect and spatially direct.     

Deterministic CNOT gate and entanglement swapping for photonic qubits using a quantum-dot spin in a double-sided optical microcavity

Abstract We propose a deterministic and scalable scheme to construct a two-qubit controlled-NOT (CNOT) gate and realize entanglement swapping between photonic qubits using a quantum-dot (QD) spin in a double-sided optical microcavity. The scheme is based on spin selective photon reflection from the cavity and can be achieved in a nondestructive and heralded way. We assess the feasibility of the scheme and show that the scheme can work in both the weak coupling and the strong coupling regimes. The scheme opens promising perspectives for long-distance photonic quantum communication and distributed quantum information processing.     

Spin configuration transformation in laterally coupled few-electron artificial molecules

Artificial molecules, namely laterally coupled quantum dots with a three-dimensional spherical confinement potential well of radius R and depth V ₀, were studied by the unrestricted Hartree-Fock-Roothaan (UHFR) method. By varying the distance d between the centers of the two coupled quantum dots, the transition from the strong coupling situation to the weak one is realized. Hund's rule, suitable for a single quantum dot is destroyed in certain conditions in the artificial molecule. For example, in the few-electron system of the strongly coupled quantum-dot molecule, a transformation of spin configuration has been found. Received 8 March 2002 / Received in final form 29 May 2002 Published online 17 September 2002     

Comparison of wurtzite atomistic and piezoelectric continuum strain models: Implications for the electronic band structure

We compare continuum and atomistic models for the electromechanical fields in wurtzite GaN/AlN quantum dots and their relative impact on the electronic band structure. Qualitative agreement between atomistic strain calculations and continuum elastic models for a wurtzite hexagonal quantum-dot structure is demonstrated; however, significant quantitative discrepancies of up to 100 meV are observed. A smaller difference of approximately 15 meV is found between fully coupled and semi-coupled continuum models.     

Phase-locked mutually coupled 1.3 microm quantum-dot lasers

Fabry-Perot InAs quantum-dot lasers grown on GaAs substrates are mutually coupled with a delay of several nanoseconds. Stable phase-locked output with narrow linewidth is obtained when the frequency detuning between the two lasers is less than 4 GHz. This simple locking scheme could find application in a variety of photonics applications.     

Thermal stability of uni-size Pt cluster disk constructed on silicon substrate

We propose a scheme to implement controlled not gate for topological qubits in a quantum-dot and Majorana fermion hybrid system. Quantum information is encoded on pairs of Majorana fermions, which live on the the interface between topologically trivial and nontrivial sections of a quantum nanowire deposited on an s-wave superconductor. A measurement based two-qubit controlled not gate is produced with the help of parity measurements assisted by the quantum-dot and followed by prescribed single-qubit gates. The parity measurement, on the quantum-dot and a topological qubit, is achieved by the Aharonov-Casher effect.     

Optimal Entanglement Concentration of the Greenberger-Horne-Zeilinger States in Quantum-dot and Micro-cavity Coupled System

The distillation of the triplet Greenberger-Horne-Zeilinger (GHZ) state is demonstrated by using the entanglement concentrating process for the partially electron-spin-entangled systems. We designate an entanglement concentration protocol (ECP) in the quantum-dot (QD) and micro-cavity coupled systems based on the post-selection, from which the partially entangled state can be concentrated with an aid of the ancillary QD and single photon. This protocol can be repeated several rounds to get an optimal success probability. With the current technology, the maximally entangled electron spins can be achieved in the GHZ states after performing some suitable unitary operation locally for the long-distance quantum communications. The advantage is that during the whole process only the single photon needs to pass through the micro-cavity which increases the total success probability even if the cavity is imperfect in implementations.     

Modular Adder Designs Using Optimal Reversible and Fault Tolerant Gates in Field-Coupled QCA Nanocomputing

The challenges which the CMOS technology is facing toward the end of the technology roadmap calls for an investigation of various logical and technological solutions to CMOS at the nano scale. Two such paradigms which are considered in this paper are the reversible logic and the quantum-dot cellular automata (QCA) nanotechnology. Firstly, a new 3 × 3 reversible and universal gate, RG-QCA, is proposed and implemented in QCA technology using conventional 3-input majority voter based logic. Further the gate is optimized by using explicit interaction of cells and this optimized gate is then used to design an optimized modular full adder in QCA. Another configuration of RG-QCA gate, CRG-QCA, is then proposed which is a 4 × 4 gate and includes the fault tolerant characteristics and parity preserving nature. The proposed CRG-QCA gate is then tested to design a fault tolerant full adder circuit. Extensive comparisons of gate and adder circuits are drawn with the existing literature and it is envisaged that our proposed designs perform better and are cost efficient in QCA technology.