La0.9Sr0.1MnO3薄膜中电流效应研究

用直流磁控溅射法在(100)LaAlO₃衬底上制备了La_0.9Sr_0.1MnO₃薄膜.经退火处理后薄膜的原子力显微镜形貌观测和X射线衍射分析显示具有比较好的质量.电阻率-温度关系表明La_0.9Sr_0.1MnO₃薄膜在281 K处发生金属绝缘体转变.电流在0.01—4 mA范围内，薄膜的峰值电阻率随电流增大而减小，在4 mA下获得了30.5%的峰值电阻率变 关键词： 掺杂锰氧化合物 0.9Sr_0.1MnO₃薄膜')" href="#">La_0.9Sr_0.1MnO₃薄膜 电流诱导效应 相分离理论     

Thickness-dependent surface morphology of La0.9Sr0.1MnO3 ultrathin films

La_0.9Sr_0.1MnO₃ (LSMO) ultrathin films with various thickness (in the range of 5-50 unit cells) are grown on (0 0 1) substrates of the single-crystal SrTi_0.99Nb_0.01O₃ by laser molecular-beam epitaxy (laser-MBE), and the surface morphology of these films were measured by scanning tunneling microscopy (STM). STM images of LSMO ultrathin film surface reveal that surface morphology becomes more flat with increasing film thickness. This study highlights the important effect of strain caused by the lattice mismatch between substrates and ultrathin films. And the results should be useful to the investigations on growing manganite perovskite materials.     

巨磁电阻材料La0.9Sr0.1MnO3与半导体Si组成的二极管的整流特性

掺杂锰氧化物La_0.9Sr_0.1MnO₃薄膜被直接沉积在n型 硅基片上，构成p-n结.这种p-n结在很宽的温度范围内都有很好的整流特性.研究结果表明， 这种p-n结的结电阻对低磁场敏感，在3×10^-2T的磁场下，磁电阻可达70％.磁 电阻的正负依赖于温度.磁电阻的大小可通过加在p-n结上的电压调节.     

Influence of annealing temperature on morphological and magnetic properties of La0.9Sr0.1MnO3

The nanocrystalline samples of La_0.9Sr_0.1MnO₃ (LSMO) have been prepared by the combustion method. The thermo gravimetric analysis of precursor was carried out. The X-ray diffraction study confirms the rhombohedral crystal structure without any other impurity phases. The morphology and magnetic properties change with annealing temperature. The saturation magnetization increases linearly and coercivity of the nanoparticles varies significantly as annealing temperature increases. The maximum saturation magnetization and lower coercivity found for the sample heat treated at 1200 °C are 52.5 emu/g and 10.7 Oe respectively.     

High resistance modulation by the electric field based on La0.9Sr0.1MnO3/SrTiO3/Si structure

A field-effect configuration based on La_0.9Sr_0.1MnO₃/SrTiO₃/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La_0.9Sr_0.1MnO₃/SrTiO₃/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×10⁷% and 2.6×10⁶% when V _DS are −2 and −6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are worthy of further investigations for potential applications of resistance modulation by electrostatic field in the heterostructures consisting of perovskite oxides and Si. Supported by the National Natural Science Foundation of China (Grant No. 50672120) and the National Basic Research Program of China (Grant No. 2004CB619004)     

Thickness dependence of microstructures in La0.9Sr0.1MnO3 thin films grown on exact-cut and miscut SrTiO3 substrates

The thickness dependence of microstructures of La_0.9Sr_0.1MnO₃ (LSMO) thin films grown on exact-cut and miscut SrTiO₃ (STO) substrates, respectively, was investigated by high-angle X-ray diffraction (HXRD), X-ray small-angle reflection (XSAR), X-ray reciprocal space mapping and atomic force microscopy (AFM). Results show that the LSMO films are in pseudocubic structure and are highly epitaxial [0 0 1]-oriented growth on the (0 0 1) STO substrates. The crystalline quality of the LSMO film is improved with thickness. The epitaxial relationship between the LSMO films and the STO substrates is [0 0 1]_LSMO[0 0 1]_EXACT-STO, and the LSMO films have a slight mosaic structure along the q_x direction for the samples grown on the exact-cut STO substrates. However, an oriented angle of about 0.24° exists between [0 0 1]_LSMO and [0 0 1]_MISCUT-STO, and the LSMO films have a mosaic structure along the q_z direction for that grown on the miscut STO substrates. The mosaic structure of both groups of the samples tends to reduce with thickness. The diffraction intensity of the (0 0 4) peaks increases with thickness of the LSMO film. The XSAR and AFM observations show that for both groups, the interface is sharp and the surface is rather smooth. The mechanism was discussed briefly.     

钙钛矿结构La0.9Sb0.1MnO3的庞磁电阻性质

一种新的钙钛矿结构的庞磁电阻氧化物La_0.9Sb_0.1MnO₃已用固态反应方法制 成，通过超导量子干涉器件(SQUID)装置测量研究了它的电输运性质和磁性质.x射线光电子 能谱分析证明，该氧化物中Sb的价态是+5价，因此该氧化物是一种新的电子掺杂型庞磁电阻 材料. 关键词： 钙钛矿结构 0.9Sb_0.1MnO₃')" href="#">La_0.9Sb_0.1MnO₃ 电子掺杂 庞磁电阻     

Enhancement of magnetoresistances at room temperature in YSZ doping La0.67Sr0.33MnO3 system

The temperature dependence of the resistance of composite samples (1−x)La_0.67Sr_0.33MnO₃+xYSZ with different YSZ doping level x was investigated at magnetic fields 0-3 T, where YSZ represents yttria-stabilized zirconia. Results show that the YSZ dopant does not only adjust the metal-insulator transition temperature, but also increases the magnetoresistance effect. With increase of YSZ doping level for the range of x<2%, the metal-insulator transition temperature values T_P of the composites decrease, but T_P increases with increase of x further for the range of x>2%. Meanwhile, in the YSZ-doped composites, a broad metal-insulator transition temperature region was found at zero and low magnetic field, which results in an obvious enhanced magnetoresistance in the temperature range 10-350 K. Specially, a larger magnetoresistance value was observed at room temperature at 3 T, which is encouraging with regard to the potential application of magnetoresistance materials.     

Oxygen pressure dependent electroresistance in La0.9Sr0.1MnO3 thin films grown by laser molecular beam epitaxy

We report here studies on the influence of oxygen pressure on the electroresistance behavior of La_0.9Sr_0.1MnO₃ thin films fabricated by laser molecular beam epitaxy. It was found that the film deposited at lower oxygen pressure shows larger c-axis parameter, higher resistance, and more distinct electroresistance. These results reveal that the electroresistance of manganite thin films can be tuned by the conditions of film fabrication. Supported by the National Natural Science Foundation of China (Grant No. 10334070) and the National Key Basic Research Program of China (Grant No. 2004CB619004)     

Critical behaviour of the specific heat of La0.9Ag0.1MnO3 manganite

 For the first time the specific heat of polycrystalline La_0.9Ag_0.1MnO₃ manganite near the Curie temperature was precisely measured by AC calorimetry and its critical behaviour was studied. The critical behaviour of the specific heat was approximated by the relationship taking into account corrections to the scaling. The regularities of variations in the universal critical parameters near the critical point are determined, and their values are calculated. Detailed analysis and comparison of the received results with the theoretical predictions and other experimental results was carried out.     

Effects of Cr doping in electron-doped manganites La0.9Te0.1MnO3

The effects of Cr doping on Mn sites in the electron-doped manganites La_0.9Te_0.1MnO₃ have been studied by preparing the series La_0.9Te_0.1Mn_1−xCr_xO₃ (0.05≤x≤0.20). Upon Cr doping, both the Curie temperature T_C and magnetization M are suppressed. The resistivity measurements indicate that there exists a weak metal-insulator (M-I) transition for the sample with x=0.05, with an increase in the doping level, the M-I transition disappears and the resistivity increases. Thermopower S(T) exhibits a maximum near T_C for all samples. By fitting the S(T) and ρ(T) curves, it is found that the temperature dependences of both S(T) and ρ(T) in the high temperature paramagnetic (PM) region follow the small polaron conduction (SPC) mechanism for all samples. The fitting parameters obtained imply changes of both the average-hopping distance of the polarons and the polaron concentration with Cr doping in our studied samples. In the case of the thermal conductivity κ(T), the variation of κ(T) is analyzed based on the combined effects due to the suppression of the local Mn³⁺O₆ Jahn-Teller (JT) lattice distortion because of the substitution of Cr³⁺ for Mn³⁺ ions, which results in the increase in κ, and the introduction of the disorder due to Cr-doping, which contributes to the decrease in κ.     

Electrical and magnetic behavior of La0.7Ca0.3MnO3/La0.7Sr0.2Ca0.1MnO3 composites

The electrical transport properties and the magnetoresistance of La_0.7Ca_0.3MnO₃/La_0.7Sr_0.2Ca_0.1MnO₃ composites are investigated as a function of sintering temperature. On the basis of an analysis by X-ray powder diffraction and scanning electron microscopy we suggest that raising the sintering temperature enhanced the interfacial reaction and creates interfacial phases at the boundaries of the La_0.7Ca_0.3MnO₃ and La_0.7Sr_0.2Ca_0.1MnO₃. Results also show that in 3 kOe, and at the Curie temperature, the magnetoresistance value of 14% was observed for the composite sintered at 1300 °C. Based on the phenomenological equation for conductivity under a percolation approach, which depends on the phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions, we fitted the experimental resistivity—temperature data from 50-300 K and find that the activation barrier decreases as temperature is increased.     

Magnetic pair making and breaking effect of Ru in La0.7Sr0.3Mn0.9Ru0.1O3 and La0.5Sr0.5Co0.9Ru0.1O3

The substitutional effect of Ru on the magnetic and transport properties of double exchange ferromagnets, La_0.7Sr_0.3MnO₃ and La_0.5Sr_0.5CoO₃ has been investigated. It is found that substitution of 10% Ru at the Mn site of La_0.7Sr_0.3MnO₃ decreases the Curie temperature by 20 K than that of the parent compound. However, a large decrease in the Curie temperature, ΔT_c80 K and the system undergoes a transition from metallic state to insulating state is observed when 10% Ru is doped in La_0.5Sr_0.5CoO₃. The marginal effect of Ru in the Mn–O–Mn sublattice in comparison to the Co–O–Co sublattice could be due to the magnetic exchange interaction between Mn and Ru by virtue of the fact that Ru exhibits variable valence states, Ru⁺⁴/Ru⁺⁵. The e_g and t_2g parentage of Ru⁺⁵ is similar to Mn⁺⁴ and therefore, Ru⁺⁵ ion appears to participate in the double exchange mediated ferromagnetic (FM) interaction. On the other hand, Ruthenium (IV) ion disrupts an intermediate spin state of cobalt (Co⁺³: t_2g⁵e_g¹), forcing a double exchange FM state to anti-FM state.     

Properties of nonstoichiometric Pr0.6−xSr0.4MnO3 as the cathodes of SOFCs

A series of samples Pr_0.6−xSr_0.4MnO₃ (x=0, 0.01, 0.05, 0.1, 0.15, 0.2) were synthesized by a solid state reaction method. Pr deficiency at the A site has a great effect on the properties of Pr_0.6−xSr_0.4MnO₃ as the cathode of SOFCs (solid oxide fuel cells). Compared to the commonly used La_0.6Sr_0.4MnO₃ and La_0.55Sr_0.4MnO₃ cathode, Pr_0.6−xSr_0.4MnO₃ is better in the properties of conductivity, overpotential and impedance. In all the samples, the one with x=0.05, Pr_0.55Sr_0.4MnO₃, revealed the best performance in the measured temperature range.     

烧结温度对La0.1Sr0.9TiO3陶瓷热电性能的影响

利用传统固相反应方法, 分别在1440℃, 1460℃, 1480℃和1500℃烧结条件下, 制备了钙钛矿结构的La_0.1Sr_0.9TiO₃陶瓷样品. 样品的粉末X射线衍射结果显示, 不同烧结温度的La_0.1Sr_0.9TiO₃ 陶瓷样品均为单相的正交结构. 从样品的扫描电子显微照片来看, 随着烧结温度的增加, 平均晶粒尺寸逐渐增大. 在室温至800℃的测试温区, 测试了样品的电阻率和Seebeck系数, 系统地研究了不同烧结温度对样品热电性能的影响. 结果表明, 样品的电阻率在测试温区内随着测试温度的升高先略微降低, 然后逐渐升高;总体来看, 样品的电阻率随烧结温度的升高先增大后降低. 在测试温区内, Seebeck系数均为负值, 表明样品的载流子为电子; 随着测试温度的升高, Seebeck系数绝对值均有所增大;随烧结温度升高, Seebeck系数绝对值逐渐增大后显著降低. 1480℃制备的样品因其相对较低的电阻率和相对较高的Seebeck系数绝对值, 在165℃时得到最大的功率因子21 μW·K^-2·cm^-1.     

Structural characterization of La0.9Ba0.1MnO3/Y-ZrO2 film by X-ray diffraction

Perovskite manganite La_0.9Ba_0.1MnO₃(LBMO) films were deposited on (0 0 1)-oriented single crystal yttria-stabilized zirconia (YSZ) substrate by 90° off-axis radio frequency magnetron sputtering. The film thickness ranged from 10 nm to 100 nm. Grazing incidence X-ray diffraction technique and high resolution X-ray diffraction were applied to characterize the structure of LBMO films. The LBMO film mainly consisted of (0 0 1)-orientated grain as well as weakly textured (1 1 0)-orientated grain. The results indicated that an amorphous layer with thickness of about 4 nm was formed at the LBMO/YSZ interface. The strain in LBMO film was small and averaged to be about -0.14%. The strain in the film was not lattice mismatch-induced strain but residual strain due to the difference in thermal expansion coefficient between film and substrate.     

Manganite-layer thickness-dependent photovoltaic effect of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p–n heterojunction

The perovskite p–n heterojunctions were fabricated by depositing La_0.9Sr_0.1MnO₃ (LSMO) layers with thicknesses ranging from 20 to 400 Å on SrNb_0.01Ti_0.99O₃ (SNTO) single-crystal substrates by laser molecular beam epitaxy (laser-MBE). The open-circuit photovoltage of the LSMO/SNTO heterojunction at room temperature increases with the increase of the thickness of LSMO layer. This result is ascribed to the increase of the carrier amount and the enhancement of the built-in electric field in the space-charge region of the LSMO/SNTO heterojunction with the increase of the thickness of LSMO layer. Furthermore, we found that the speed of photovoltaic response is almost independent of the thickness of LSMO layer in the heterojunction.     

Enhanced ferroelectricity and ferromagnetism in Bi0.9Ba0.1FeO3/La2/3Sr1/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.1FeO3(BBFO)/La2/3Sr1/3MnO3(LSMO) heterostructures are fabricated on LaAlO3(100) substrates by pulsed laser deposition. Giant remnant polarization value(～ 85 μC/cm2) and large saturated magnetization value(～ 12.4 emu/cm3) for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectric properties in the BBFO/LSMO heterostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

Modification of the organic/La0.7Sr0.3MnO3 interface by in situ gas treatment

La_0.7Sr_0.3MnO₃ (LSMO) can act as a spin injection electrode in organic spin-valves and organic light-emitting devices. For the latter application, good control of the electronic structure of the organic/LSMO interface is a key issue to ensure sufficient current injection in the device. By exposing cleaned LSMO surfaces to activated oxygen and hydrogen, the work function of the samples can reach 5.15 and 4.3 eV, respectively, as shown by in situ photoemission measurements. The initial stage of formation of the organic/LSMO interface upon deposition of N,N′-bis-(1-naphyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) onto the oxygen-treated LSMO surface is examined. We find that the NPB molecules evenly cover the LSMO surface and that the interface barrier height is 0.8 eV, which is comparable to that at the NPB/indium tin oxide (ITO) interface with the ITO surface pretreated in situ by oxygen plasma.     

Magnetic resonance in crystalline La0.9Ca0.1MnO3: Comparative study of bulk and nanometer-sized samples

X-band electron magnetic resonance (EMR) measurements were done at 115?T?600 K on bulk and nanometer size-grain powder single-crystalline samples of La_0.9Ca_0.1MnO₃, in order to study an impact of structural inhomogeneity on magnetic ordering. For the nano-crystal sample, two superimposed EMR lines are observed below 240 K, while for bulk-crystal one, a second line emerges in narrow temperature interval below 130 K. Temperature dependences of resonance field and line width of the main and the secondary line are drastically different. EMR data and complementary magnetic measurements of bulk-crystal sample reveal mixed-magnetic phase, which agrees with the published phase diagram of bulk La_1−xCa_xMnO₃. In a marked contrast, the same analysis for nano-crystal sample shows two phases one of which is definitely ferromagnetic (FM) and other is likely such, or super paramagnetic. The data obtained are interpreted in terms of very different magnetic ground states in the two samples, that is attributed to different randomness of the indirect FM exchange interactions mediated by bound holes.