Spin transport in graphene spin–orbit barrier structure

We studied spin-dependent transport in monolayer graphene with a spin–orbit barrier, a narrow strip in which the spin–orbit interaction is not zero. When the Fermi energy is between the two spin-split bands, the structure can be used to generate spin-polarized current. For a strong enough Rashba strength, a thick enough barrier or a low enough Fermi energy, highly spin-polarized current is generated (polarization ∼0.7–0.85$\sim 0.7\text{–}0.85$). Under these conditions, the spin direction of the transmitted electron is approximately perpendicular to the direction of motion. This shows that graphene spin–orbit nanostructures are useful for the development of graphene spintronic devices.     

Anticrossing spectroscopy in multi-nanolayer structures

Presently we explored nanosandwich structures with graphite (Gt) and graphene (Gn) nanolayers. We found that in Pt–SiO₂–Gt, Pt–BN–Gt and Pt–SiO₂–Ni–Gn structures the spectra may be decomposed into several components, each corresponding to a different value of the total spin angular momentum S. Only one component was required to describe the Pt–SiO₂–Ni–Gn spectra at 5.3 K, with additional components appearing at higher temperatures. On the other hand, a single component described the Pt–BN–Ni–Gn spectra at all temperatures. Temperature dependence of the spectra of the Pt–SiO₂–Ni–Gn system was studied in the 5.3–75.3 K range. Presently we obtained experimental results for novel sandwich systems, with the Gn layer only two monoatomic layers thick. Thus, we compared experimental spectra of a three-nanolayer sandwich system containing a Gt nanolayer with those of a four-nanolayer system containing a diatomic Gn layer. The experimental results were discussed using a theoretical model of the respective physical mechanisms. We propose an exchange anticrossing mechanism, whereby the spin-state polarization of the given Zeeman?s substate in the Pt nanolayer is transported to Gt or Ni–Gn nanolayer by the exchange interaction between the two layers. As long as exchange interaction coupling spin states in different nanolayers is involved, we term the respective spectra the “spin anticrossing exchange-resonance spectra”. This clarifies the physical origins of some of the model parameters, i.e. the growing external magnetic field shifts the Zeeman?s substates in the different layers differently, producing the anticrossing spectrum. In the frameworks of the developed model, we propose spin–orbit (SO) interaction as the main factor inducing the spin–lattice relaxation, which is one of the important factors determining the line shape. We performed ab initio calculations of the SO interaction in carbon and metal nanolayers, finding that the SO interactions monotonously increase with the atomic number.     

Spin Hall effect and spin current generation in two-dimensional systems with random Rashba spin–orbit coupling

We consider a new effect induced by spin–orbit coupling in a two-dimensional electron gas confined in a semiconductor quantum well, i.e. the possibility of spin current generation by fluctuating random Rashba spin–orbit interaction, with the corresponding mean value of the interaction being equal to zero. Our main results suggest that – in contrast to the spatially uniform Rashba spin–orbit interaction – the spin Hall effect does not vanish for typical disorder strengths. We also point out some other possibilities of using such a random Rashba coupling for the generation of spin density and spin current in two-dimensional nonmagnetic structures.     

Bias-dependent spin relaxation in a -InAs/AlSb 2DES

Manipulation of electron spin is a critical component of many proposed semiconductor spintronic devices. One promising approach utilizes the Rashba effect by which an applied electric field can be used to reduce the spin lifetime or rotate spin orientation through spin–orbit interaction. The large spin–orbit interaction needed for this technique to be effective typically leads to fast spin relaxation through precessional decay, which may severely limit device architectures and functionalities. An exception arises in [1 1 0]-oriented heterostructures where the crystal magnetic field associated with bulk inversion asymmetry lies along the growth direction and in which case spins oriented along the growth direction do not precess. These considerations have led to a recent proposal of a spin-FET that incorporates a [1 1 0]-oriented, gate-controlled InAs quantum well channel. We report measurements of the electron spin lifetime as a function of applied electric field in a [1 1 0]-InAs 2DES. Measurements made using an ultrafast, mid-IR pump-probe technique indicate that the spin lifetime can be reduced from its maximum to minimum value over a range of less than 0.2 V per quantum well at room temperature.     

Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions

The electrical transport properties of InN/GaN heterostructure based Schottky junctions were studied over a wide temperature range of 200-500 K. The barrier height and the ideality factor were calculated from current-voltage (I-V) characteristics based on thermionic emission (TE), and found to be temperature dependent. The barrier height was found to increase and the ideality factor to decrease with increasing temperature. The observed temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. Such inhomogeneous behavior was modeled by assuming the existence of a Gaussian distribution of barrier heights at the heterostructure interface.     

Determination of the Rashba and Dresselhaus coupling constants using the conductance of a ballistic nanowire

We study the conductance steps of a ballistic nanowire in the presence of a harmonic potential, an in-plane magnetic field, and spin–orbit interactions induced by Rashba and Dresselhaus effects. Calculations of the conductance, at low temperature, using the Landauer–Büttiker formalism, reveal different patterns of steps that are strongly dependent on the magnetic field. Such dependence provides a powerful tool for determining the strengths of the spin–orbit interaction independently, especially in nanowires with low carrier density.     

Influence of the spin–orbit interaction in the impurity-band states of n-doped semiconductors

We study numerically the effects of an extrinsic spin–orbit interaction on the model of electrons in n-doped semiconductors of Matsubara and Toyozawa (MT). We focus on the analysis of the density of states (DOS) and the inverse participation ratio (IPR) of the spin–orbit perturbed states in the MT set of energy eigenstates in order to characterize the eigenstates with respect to their extended or localized nature. The finite sizes that we are able to consider necessitate an enhancement of the spin–orbit coupling strength in order to obtain a meaningful perturbation. The IPR and DOS are then studied as a function of the enhancement parameter.     

Some exact identities connecting one- and two-particle Green's functions in spin–orbit coupling systems

Some exact identities connecting one- and two-particle Green's functions in the presence of spin–orbit coupling have been derived. These identities are similar to the Ward identity in usual quantum transport theory of electrons. A satisfying approximate calculation of the spin transport in spin–orbit coupling system should also preserve these identities, just as the Ward identities should be remained in the usual electronic transport theory.     

Perfect spin polarization in symmetric two-terminal mesoscopic rings

Spin-polarized transport through an Aharonov–Bohm (AB) semiconductor mesoscopic ring is investigated in the presence of both the Rashba spin–orbit interaction (RSOI) and the Dresselhaus spin–orbit interaction (DSOI). The ring symmetrically bridges two input and output electrodes. Based on tight-binding model and Green?s function formalism, we find that for AB fluxes other than integer or half-integer multiples of the flux quanta the ring acts as a spin selective device with unit efficiency only when the difference between strengths of RSOI and DSOI is nonzero and small. Results of this study can be used to design a nonmagnetic-material-based perfect spin filter.     

Mesoscopic Fano effect modulated by Rashba spin–orbit coupling and external magnetic field

By employing non-equilibrium Green's function method, the mesoscopic Fano effect modulated by Rashba spin–orbit (SO) coupling and external magnetic field has been elucidated for electron transport through a hybrid system composed of a quantum dot (QD) and an Aharonov–Bohm (AB) ring. The results show that the orientation of the Fano line shape is modulated by the Rashba spin–orbit interaction kRL$k_{R}L$ variation, which reveals that the Fano parameter q will be extended to a complex number, although the system maintains time-reversal symmetry (TRS) under the Rashba SO interaction. Furthermore, it is shown that the modulation of the external magnetic field, which is applied not only inside the frame, but also on the QD, leads to the Fano resonance split due to Zeeman effect, which indicates that the hybrid is an ideal candidate for the spin readout device.     

Performance improvement of rubrene-based organic light emitting devices with a mixed single layer

We have investigated the performance of organic light-emitting devices (OLEDs) with a rubrene-doped mixed single layer by using 4,4′-bis[N-(1-napthyl)-N-phenyl- amion] biphenyl (α-NPD) as hole transport layer. Comparing to a conventional heterostructure OLED, equal luminance vs. current density characteristics were obtained. In addition, maximum power efficiency was threefold improved, and the achieved value was 5.90 lm/W by optimizing a mixing ratio of hole and electron transport materials. By evaluating the temperature dependence of the J – V characteristics for electron-injection dominated device, the electron injection from Al/LiF to mixed organic layer is attributed to Schottky thermal emission model. And the barrier height of the electron injection from Al/LiF into mixed single layer was obtained to be 0.62 eV, which is lower than Al/Alq₃ interface. Meanwhile, the mixed single-layer device exhibited superior operational durability at a half-luminance of 2,250 h under a constant current operation mode. The reliability was improved with a factor of two compared to the heterostructure device due to the improvement of stability in mixed organic molecules and removal of the heterojunction interface in the mixed single-layer device.     

Exciton/plasmon mixing in metal–semiconductor heterostructures

We report on the strong coupling between surface plasmons and inorganic quantum well excitons. The sample is formed by a corrugated silver film deposited on the top of a heterostructure consisting of five GaAs/GaAlAs quantum wells grown by molecular beam epitaxy. Reflectometry experiments at low temperature (77 K) evidence the formation of plasmon/heavy-hole exciton/light-hole exciton mixed states. The interaction energies, deduced by fitting the experimental data with a coupled oscillator model, amount to 22 meV for the plasmon/light-hole exciton and 21 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon–exciton coupling are also discussed and qualitatively related to the plasmon polarization.     

Theoretical investigation of magnetic property in paramagnetic neodymium gallium garnet under high magnetic field

The magnetic property in neodymium gallium garnet (NdGaG) is studied by the quantum theory. The ground configuration split states are calculated taking into account the spin–orbit interaction and crystal field effect. Taking account of the Nd–Nd exchange interaction, a good agreement between experimental and theoretical values can be obtained for the variation of the magnetic moment with the external magnetic field under “extreme” conditions (low temperature and high magnetic field). Moreover, the temperature dependence of magnetic moment and the magnetic susceptibility χ is also discussed. Above 30 K, the magnetization (M) shows a linear field (H_e) dependence.     

Spin-polarized transport in ferromagnet/Rashba quantum dot/ferromagnet system

The transport properties of the Datta and Das's spin transistor with the center normal region (or the quantum dot) having Rashba spin–orbit interaction and electron–electron (e–e) interaction U are investigated. We find while intra-dot level is near or above the chemical potential of the leads, the modulation efficiency of this spin transistor almost is not influenced by U. On the other hand, when the level is below the chemical potential, e–e interaction U may affect the modulator efficiency, because in this case the existence of e–e interaction can change the transport properties of the quantum dot. But the modulation efficiency still keep enough large and the spin transistor can effectively work.     

Characteristics of persistent spin current components in a quasi-periodic Fibonacci ring with spin–orbit interactions: Prediction of spin–orbit coupling and on-site energy

In the present work we investigate the behavior of all three components of persistent spin current in a quasi-periodic Fibonacci ring subjected to Rashba and Dresselhaus spin–orbit interactions. Analogous to persistent charge current in a conducting ring where electrons gain a Berry phase in presence of magnetic flux, spin Berry phase is associated during the motion of electrons in presence of a spin–orbit field which is responsible for the generation of spin current. The interplay between two spin–orbit fields along with quasi-periodic Fibonacci sequence on persistent spin current is described elaborately, and from our analysis, we can estimate the strength of any one of two spin–orbit couplings together with on-site energy, provided the other is known.     

Infinite matter properties and zero-range limit of non-relativistic finite-range interactions

We discuss some infinite matter properties of two finite-range interactions widely used for nuclear structure calculations, namely Gogny and M3Y interactions. We show that some useful informations can be deduced for the central, tensor and spin–orbit terms from the spin–isospin channels and the partial wave decomposition of the symmetric nuclear matter equation of state. We show in particular that the central part of the Gogny interaction should benefit from the introduction of a third Gaussian and the tensor parameters of both interactions can be deduced from special combinations of partial waves. We also discuss the fact that the spin–orbit of the M3Y interaction is not compatible with local gauge invariance. Finally, we show that the zero-range limit of both families of interactions coincides with the specific form of the zero-range Skyrme interaction extended to higher momentum orders and we emphasize from this analogy its benefits.     

Bose–Einstein condensates in concentrically coupled annular traps with spin–orbit coupling and rotation

We investigate Bose–Einstein condensates in concentrically coupled annular traps with spin–orbit coupling and rotation. The ground state wave functions are computed by minimizing the Gross–Pitaevskii energy functional, and the combined effects of system?s parameters, especially the spin–orbit coupling and rotating, are investigated. The results show that for a finite fixed spin–orbit coupling, with increasing the angular frequency of rotation, the system is always in phase coexistence. Moreover, phase transitions between different ground state phases can be induced not only by spin–orbit coupling, but also rotation, which resembles very much the one where the s-wave interactions are varied.     

Double reflection of electron spin in 2D semiconductors

The reflection of spin-polarized electrons from a potential barrier inside a quantum well (QW) is analyzed. Using Clifford (geometric) algebra it is shown that the spin–orbit interaction brings about a double reflection at an oblique incidence of an electronic beam. The reflected beam is in a superposition of two beams having different wavelengths and reflection angles which produces a two-period spatial beating pattern that can be observed experimentally in the electron spin polarization component which is normal to the QW.