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1.
Al-films were prepared by quench-condensation from Al2O3-crucibles and W-boats, respectively and irradiated with 230 keV Al+-selfions at low temperatures (<15 K). Forsmall fluences (<5·1015 cm–2) the irradiation induced changes of the superconducting transition temperatureT c and the resistivity strongly depend on the chemical form of the oxygen incorporated into the films by the different preparation techniques. Forhigh fluences (>1016 cm–2) the behavior of the irradiated films is determined only by the integral oxygen content of the layers. The results are discussed qualitatively taking into account different physical processes during irradiation.  相似文献   

2.
Al-films, evaporated at room temperature under different oxygen partial pressures, were irradiated with self-ions (500 keV, Al++) at low temperature (<7 K). The observed increase of the resistivity and of the superconducting transition temperatureT c depends strongly on the oxygen contentc 0 present in the layers. A qualitative different behaviour of the above quantities was found for different fluence ranges of the bombarding ions. For high fluences in all cases an oxygen stabilized disorder state was obtained with correspondingT c-increases betweenT c=0.2 K for the purest films (c 00.5 at %) andT c =1.2 K for films with c 0=40 at %. The annealing behaviour of the irradiated films is also dependent on the oxygen contentc 0.  相似文献   

3.
Summary Epitaxial films of YBa2Cu3O7−x were depositedin situ on LaAlO3 substrates using single-target 90° off-axis sputtering. The films were characterized by magnetization measurements (M vs. T, H), applying the field parallel toc-axis. The observed differences in theT c andJ c values are attributed to the different oxygen content in the superconducting films. Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.  相似文献   

4.
The intensity of the 646 cm-1 Raman line in YBa2Cu3-x V x O7-y has been measured for cooling and heating from 77 K to 234 K. The intensity exhibits intensity hysteresis of order 20% in the cooling versus heating values between T c = 89 K and T o = 234 K. This effect is unexplained but is extremely similar to that reported by Ledbetter et al. for the bulk modulus and C 11 elastic coefficient. In each case the hysteresis vanishes below T c , independent of the value of T c , which may be adjusted from 60 K to 94 K by changing oxygen concentration y. Qualitative interpretation requires that the structural phase transition near 234 K be intimately related to the superconducting transition at T c presumably through partial ordering of oxygens.  相似文献   

5.
Granular aluminium films were prepared by evaporation in an oxygen atmosphere. The oxygen content Co of the films was determined by Rutherford backscattering. The superconducting transition temperature Tc is measured as a function of the oxygen concentration. From the results the thickness of the oxide barriers is derived by applying a model of spherical granula. This model is confirmed by the observed linear dependence Tc α Co.  相似文献   

6.
The influence of ion bombardment on the superconducting transition temperature Tc and the structure of thin evaporated niobium layers has been investigated as a function of ion species and layer purity. Irradiation through pure layers with neon ions and fluences of typically 1016 ions/cm2 leads to relatively small Tc decreases (δTc × 0.5 K), while in oxygen contaminated layers larger effects depending on oxygen concentration are observed. Homogeneous implantation of chemically active impurities (nitrogen, oxygen) also drastically depresses Tc reaching the detection limit of 1.2K at a concentration of 15 at. %N. The Tc depressions correlate with a lattice parameter expansion of the Nb bcc structure at a rate of about 0.1 %per 1 at. % impurity.  相似文献   

7.
We present a study of the temperature dependence of the critical currentJ c of several dc magnetron sputtered thin Y-Ba-Cu-O films on single crystalline SrTiO3, ZrO2 and Al2O3 substrates. Near the critical temperature Tc it is found thatJ c(1–T/Tc)n withn=3 for the SrTiO3 and ZrO2 substrates, whilen=1·3 for the Al2O3 substrate. The temperature dependence in our samples approximately agrees with standard theories for weak links or with the Ambegaokar-Baratoff equation.  相似文献   

8.
Lead films vapor quenched onto nucleating monolayers of Mo or W exhibit strong lattice disorder and can be considered to be amorphous. The amorphous-to-crystalline transformation temperatureT tr is indicated by a sharp drop of the electrical resistivity in the course of annealing.T tr is found to be proportional tod –2 for Pb thicknessd smaller than 30 nm. The superconducting transition temperatureT c is by 0.6 to 1 K smaller in the amorphous state than after crystallization. In both states,T c is proportional tod –1. Prenucleation with about half a monolayer of Mo leads to quite the sameT c depression as observed earlier by Strongin et al. on Pb films vapor quenched onto predeposited films of SiO, Ge or Al2O3. For comparison, experiments have been carried out with 2.5 nm Ge predeposits. As with Mo prenucleation, a well defined transformation temperatureT tr of about the same value has been observed.T c of bulk amorphous Pb can be extrapolated to be about 6.6 K.  相似文献   

9.
鲍善永  董武军  徐兴  栾田宝  李杰  张庆瑜 《物理学报》2011,60(3):36804-036804
利用脉冲激光沉积技术,通过改变沉积过程中的氧气压力,在蓝宝石(0001)基片上制备了一系列ZnMgO合金.通过X射线衍射、反射和透射光谱以及室温和变温荧光光谱,对薄膜的结构和光学性能进行了系统地表征,分析了工作气压对ZnMgO合金薄膜的结晶质量及光学特性的影响.研究结果表明:随着沉积环境中氧气压力的增大,ZnMgO薄膜的结晶质量下降,富氧环境下,与蓝宝石晶格平行的ZnO晶粒的出现是导致薄膜结晶质量下降的主要原因;相对于本征ZnO,不同氧气环境下沉积的ZnMgO薄膜的紫外荧光峰均出现了不同程度的蓝移.随着工 关键词: ZnO Mg掺杂 脉冲激光沉积 薄膜生长 光学特性  相似文献   

10.
11.
We have studied the influence of oxygen on the superconducting properties of thin films of lead, indium and tin deposited on glass or sapphire substrates. In addition, the morphological microstructure was investigated by scanning electron microscopy. The film thickness was 1.0 μm, and the partial pressure of O2 during the film deposition was raised up to 1×10−4 Torr. In all three materials the development of a granular structure and a strong increase in the residual electric resistivity was observed due to the O2-treatment. Whereas in the Pb films no change of the critical temperature was found, the In films deposited on glass substrates showed a slight increase ofT c due to the oxygen. The strongest increase ofT c (up to 8%) was observed in the O2-treated Sn films. These results are discussed in terms of the McMillan theory. From our measurements of the critical current densityj c we conclude that edge pinning is dominant in the undoped films. All three materials showed a strong increase ofj c due to the O2-treatment which must be interpreted in terms of bulk pinning.  相似文献   

12.
Geerk  J.  Linker  G.  Meyer  O.  Politis  C.  Ratzel  F.  Smithey  R.  Strehlau  B.  Xiong  G. C. 《Zeitschrift für Physik B Condensed Matter》1987,67(4):507-511
Thin superconducting films of La1.8Sr0.2CuO4 have been prepared by magnetron sputter deposition and subsequent temperature treatment. The composition of the films has been determined by Rutherford backscattering and the structure by thin film X-ray diffraction. The onset of superconductivity was about 32 K and the midpoint near 28 K. Defect production in the films by He ion bombardment revealed a drasticT c reduction with a sensitivity similar to that observed in the Chevrel phases. Oxygen implantation and subsequent annealing led to an enhancement of theT c onset.  相似文献   

13.
Zr and Ti have been substituted in the system Y1−x M x Ba2Cu3O7−δ(M=Zr, Ti,x=0.05,0.1). We find that theT c value is unchanged, ∼90K for Zr substitutions up to 10% and in the case of Ti substitutions theT c drops significantly. These changes may arise from their site preference.  相似文献   

14.
We have studied the low-temperature annealing effect on the physical properties of Bi2Sr2CaCu2O y thin films deposited on a MgO(100) substrate by rf magnetron sputtering. It is found that the characteristics of the films depend strongly on the oxygen partial pressure during re-annealing at 470°C after high-temperature annealing at 770°C in air. Tc and ρ at 300 K abruptly change for less than 20% oxygen partial pressure. A peak shift of the Bi4f core level spectrum is also observed at 0% oxygen partial pressure in an XPS measurement, which is due to the change in the ligand of the Bi atom.  相似文献   

15.
GaMnN films with 1-3% Mn deposited on Si(100) and Al2O3(0001) substrates, by the technique of nebulized spray pyrolysis by employing acetylacetonate precursors, have been characterized by X-ray diffraction, photoluminescence spectra and other techniques. The films are ferromagnetic and show magnetic hysteresis. The ferromagnetic TC increases with the Mn content, with the 3% Mn film showing a TC of ∼250 K. Anomalous Hall effect is observed below TC where the films exhibit a small negative magnetoresistance.  相似文献   

16.
The optical spectrum of reduced-T c GdBa2Cu3O7– has been measured for polarizations parallel and perpendicular to theab plane. The sample was an oxygen-deficient single crystal with a large face containing thec axis. The polarized reflectance from this face was measured from 20–300 K in the spectral region from 30–3000 cm–1, with 300 K data to 30000 cm–1. Kramers-Kronig analysis was used to determine the spectral dependence of theab and thec components of the dielectric tensor. The optical properties are strongly anisotropic. Theab-plane response resembles that of other reduced-T c materials whereas thec axis, in contrast, shows only the presence of several phonons. There is a complete absence of charge carrier response alongc aboveand belowT c. This observation allows us to set an upper limit to the free-carrier spectral weight for transport perpendicular to the CuO2 planes.Permanent address: Institute of Physics, CSAV, Prague, Czechoslovakia  相似文献   

17.
We investigated the effects of added Tm2O3, Sc2O3, and Yb2O3 on the superconducting properties of sintered Er123 samples. Tm2O3 addition caused the least Tc degradation, exhibiting a Tc above 90 K even for 17 vol% addition. Samples with added Sc2O3 maintained a Tc at above 90 K up to an addition of 7.2 vol%, while Yb2O3-containing samples showed a monotonic decrease in Tc with increased vol% of added Yb2O3. Tm2O3-containing samples exhibited a slight increase in Jc(0.1 T)/Jc(0) and had constant Jc values even for 17 vol% addition. XRD and SEM results indicate that the Tm2O3 is very stable in the superconducting matrix.  相似文献   

18.
Magnetic and superconducting properties of polycrystalline samples of RuSr2Gd1.5Ce0.5Cu2O(10 − δ), asprepared (by solid-state reaction) and annealed in pure oxygen at different pressure are presented. Specific heat and magnetization were investigated in the temperature range 1.8–300 K with a magnetic field up to 8 T. Specific heat, C (T), shows a jump at the superconducting transition (with onset at T ≈ 37.5 K) and a Schottky-type anomaly below 20 K. It is found that curves C(T) taken for different values of magnetic field have the same crossing point (at T * ≈ 2.7 K) for all samples studied. At the same time, C(H) curves taken for different temperatures have a crossing point at a characteristic field H * ≈ 3.7 T. These effects are manifestations of the crossing-point phenomenon, which is supposed to be inherent for strongly correlated electron systems.  相似文献   

19.
邓恒  杨昌平  黄昌  徐玲芳 《物理学报》2010,59(10):7390-7395
采用传统固相反应法制备了双层钙钛矿结构锰氧化物La1.8Ca1.2Mn2O7陶瓷,并用X射线粉末衍射法,扫描电镜,HL5500PC Hall效应分析仪和综合物性测量系统(PPMS)对其磁、电性质进行了表征.结果表明:经过两次高温烧结可合成具有双层Sr3Ti2O7型四方结构的La1.8Ca1.2Mn2<  相似文献   

20.
U R K Rao  A K Tyagi  S J Patwe  R M Iyer 《Pramana》1988,31(1):L79-L84
TG/DAT evidence to support incorporation of fluorine into superconducting orthorhombic lattice in YBa2Cu3O6⋅+δ is presented. It is inferred that the F atom goes substitutionally in place of O atom in the lattice. Replacement of two oxygen atoms by four fluorine atoms did not alter theT cof the product. By a similar replacement of two of its oxygens by fluorine atoms, the tetragonal modification of the oxide yields a product that remains non-superconducting down to 30 K.  相似文献   

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