共面蝴蝶结混合表面等离子体波导模式特征研究

基于传统纵向蝴蝶结混合表面等离子体波导(BTHPW),提出一种共水平面BTHPW集成光波导结构,是由半导体硅肋和金属Ag肋两种波导对放在一个SiO_2基底面上构成,采用有限元法对其混合模式特征进行数值模拟,分析该波导传播长度、归一化有效模场面积和品质因子等特性随波导几何尺寸的变化规律。结果表明,该波导模式具有传播损耗较小同时又较强光限制能力的特点,最长传播距离可达108μm,最小有效模面积可达λ~2/3000左右。该波导结构制作工艺简单,并可应用于高灵敏度折射率传感器和微纳米光子集成器件等领域。     

基于表面等等离波子的新型Y分支波导

新型高效的纳米光波导器件的研制纳米集成光学的核心技术之一。Y分支波导作为最基本的分光和光路连接元件是纳米光学器件设计与制备的基础。运用时域有限差分(FDTD)法,模拟计算了基于表面等等离波子(SPP)的纳米Y分支波导的传输特性。结果表明,该新型Y分支波导在光通信波段可以实现大角度的分光功能,且在180°分支情况下,传输效率仍高达92.8%以上。另外,该波导还具有导波性能良好、对分叉处间隙缺陷大小不敏感及制作容差较大和器件尺寸在纳米量级等特点。对该新型光波导器件的研究为未来纳米集成光学器件的研制和应用有一定的指导意义。     

一种由椭圆形金属和介质纳米线组成的混合表面等离子体光波导的基模控制特性研究

本文研究了一种由三根并排放置的椭圆形金属-介质-金属纳米线构成的混合表面等离子体光波导所支持的电磁场基模的控制特性,中间是高折射率的介质纳米线,左右是两根对称放置的金属纳米线。研究结果表明,基模电磁场增强效应主要分布在三根纳米线形成的两个间隙区域,且对整个结构的几何参数有一定依赖性。因此,通过改变纳米线的几何尺寸、两根纳米线之间的间距以及介质的电磁参数,可以调整和控制这种波导所支持的基模的有效折射率、模式传输距离、归一化的模式面积和模式束缚因子等物理特性。基于这些有效的模式操控特性,这种混合型的表面等离子体光波导可以应用于高密度光子器件集成、纳米光子学和生物传感器等领域。     

纳米结构的硅绝缘材料(SOI)波导

介绍在纳米(亚微米)量级上的硅波导,包括其结构,性质,和与普通石英光纤相比的优点.再介绍在硅波导内的非线性光学过程(拉曼效应,四波混频,波长转换效应等),以及这些效应所带来的在光器件和技术上的进步.最后总结nm量级上的硅波导的研究现状以及发展潜力.     

高局域性的可调硅基混合表面等离子体光相位调制器

设计和分析了一种可调硅基混合表面等离子体相位调制器.表面等离子体的引入打破了衍射极限的限制,使光场局域在一个纳米尺寸范围.该调制器的实现采用了两种原理:硅材料的等离子体色散效应以及聚合物的电光效应.由于器件结构的电容和寄生电阻较小,RC响应时间为3.77 ps,调制带宽大约100 GHz.当外加2.5V的驱动电压时,该...     

硅基波导慢光器件及其应用

硅基波导慢光器件是构建全光智能互连和实时高速测控等下一代信息技术的关键器件,在光通信和光信息处理等诸多领域具有显著的技术优势和巨大的应用潜力.随着器件结构的不断创新以及微电子制造技术的不断升级换代,硅基波导慢光器件愈来愈走向实用化.文章介绍了慢光的基本原理,概述了当前国内外硅基波导慢光器件的研究进展,着重分析了基于微环谐振腔的硅基波导慢光器件,并指出了它在具体应用领域中的发展前景.     

带有T型腔的MIM波导的法诺共振特性研究

设计了一种带有枝节的金属-介质-金属(MIM)波导与T型谐振腔侧耦合的表面等离子体光波导结构。利用有限元法(FEM),数值分析了改变耦合距离、T型腔几何尺寸及其不对称性、枝节高度对法诺(Fano)共振谱线的影响。结合电磁场分布进一步揭示了Fano共振现象产生的物理机理,由此可以动态调节表面等离子体波在结构中传输时产生的Fano共振特性。另外,研究表明在T型腔内填充不同折射率的材料,利用所设计的波导结构可以实现灵敏度高达940nm/RIU的纳米尺度的折射率传感器。最后研究了结构的慢光传输特性,可以在Fano峰值附近实现约0.025ps的光学延迟。这种新型的表面等离子体光波导可能会在光子器件集成、慢光效应及纳米传感领域有着较大的应用前景。     

一种石墨烯波导褶皱激发表面等离子体激元的设计

设计了褶皱石墨烯波导结构激发表面等离子体激元,通过设计周期阵列结构实现了表面等离子体激元传播损耗的补偿.理论分析了周期阵列结构的表面等离子体激元传播模型和补偿损耗的方式,结果表明褶皱衍射激发表面等离子体激元波导不仅能够激发表面等离子体激元,还能利用表面等离子体激元波矢关系实现器件参数控制,周期阵列增益全程补偿损耗的方式可以显著增加表面等离子体激元的传播距离.数值分析结果进一步表明:该结构具备了保持亚波长尺寸的强局域化优势;周期阵列增益全程补偿可以显著提高纳米腔中的电场强度,降低传输损耗;波导结构的粒子反转水平较高,自发辐射噪声的扰动较低.设计的石墨烯波导器件可以为微纳光学集成、光子传感和测量等领域提供理想的亚波长光子器件.     

一种石墨烯波导褶皱激发表面等离子体激元的设计（英文）

设计了褶皱石墨烯波导结构激发表面等离子体激元,通过设计周期阵列结构实现了表面等离子体激元传播损耗的补偿.理论分析了周期阵列结构的表面等离子体激元传播模型和补偿损耗的方式,结果表明褶皱衍射激发表面等离子体激元波导不仅能够激发表面等离子体激元,还能利用表面等离子体激元波矢关系实现器件参数控制,周期阵列增益全程补偿损耗的方式可以显著增加表面等离子体激元的传播距离.数值分析结果进一步表明:该结构具备了保持亚波长尺寸的强局域化优势;周期阵列增益全程补偿可以显著提高纳米腔中的电场强度,降低传输损耗;波导结构的粒子反转水平较高,自发辐射噪声的扰动较低.设计的石墨烯波导器件可以为微纳光学集成、光子传感和测量等领域提供理想的亚波长光子器件.     

表面等离子体和人工电磁介质纳米光子器件

贵重金属在纳米光子学中开始起着越来越重要的作用,特别是贵重金属的表面等离子体效应和人工电磁介质结构的应用。表面等离子体纳米光子器件能实现光学模的亚波长束缚,因此在超高集成度光路、发光二极管、传感器、探测器等应用中将起着巨大的作用。同时,亚波长金属材料组成的人工电磁介质也能展现出各种激动人心的物理特性和潜在的应用。表面等离子体器件和人工电磁介质结构都需要贵重金属（如金、银等）作为其基本的组成元素。在这里,将回顾我们研究小组最近在表面等离子体器件和人工电磁介质结构方面的一些进展。将系统介绍光通讯波段的亚波长表面等离子波导和普通硅波导之间的高性能耦合器,以及超薄、宽吸收角度的亚波长人工电磁介质完美吸收结构等内容。也将简单介绍我们利用表面等离子体效应和人工电磁介质结构在隐形方面的一些研究。     

Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper

Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent progress of the direct epitaxy and fabrication of quantum dot (QD) lasers and integrated guided-wave devices on silicon. This approach involves the development of molecular beam epitaxial growth of selforganized QD lasers directly on silicon substrates and their monolithic integration with amorphous silicon waveguides and quantum well electroabsorption modulators. Additionally, we report a preliminary study of long-wavelength (> 1.3 μm) QD lasers grown on silicon and integrated crystalline silicon waveguides using membrane transfer technology.     

石墨烯-硅基混合光子集成电路

近年来硅基光子学已经慢慢走向成熟,它被认为是未来取代电子集成电路,实现下一代更高性能的光子集成电路的关键技术.这得益于硅基光子器件与现代的互补金属氧化物半导体工艺相兼容,能够实现廉价的大规模集成.然而,由于受硅材料本身的光电特性所限,在硅基平台上实现高性能的有源器件仍然存在着巨大挑战.石墨烯-硅基混合光子集成电路的发展为解决这一问题提供了可行的方案.这得益于石墨烯作为一种兼具高载流子迁移率、高电光系数和宽带吸收等优点的二维光电材料,能够方便地与现有硅基器件相集成,并充分发挥自身的光电性能优势.本文结合我们课题组在该领域研究的一些最新成果,介绍了国际上在石墨烯-硅基混合光子集成电路上的一些重要研究进展,涵盖了光源、光波导、光调制器和光探测器四个重要组成部分.     

Hybrid silicon evanescent approach to optical interconnects

We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III–V materials and silicon-on-insulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light sources. For the external signal processing, Mach–Zehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited, 3 dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5 V mm. The successful implementation of quantum well intermixing technique opens up the possibility to realize multiple III–V bandgaps in this platform. Sampled grating DBR devices integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM regions are 1520, 1440 and 1480 nm, respectively. The high-temperature operation characteristics of the HSEP are studied experimentally and theoretically. An overall characteristic temperature (T ₀) of 51°C, an above threshold characteristic temperature (T ₁) of 100°C, and a thermal impedance (Z _T ) of 41.8°C/W, which agrees with the theoretical prediction of 43.5°C/W, are extracted from the Fabry–Perot devices. Scaling this platform to larger dimensions is demonstrated up to 150 mm wafer diameter. A vertical outgassing channel design is developed to accomplish high-quality III–V epitaxial transfer to silicon in a timely and dimension-independent fashion.     

InGaAsP/InP evanescent mode waveguide optical isolators and their application to InGaAsP/InP/Si hybrid evanescent optical isolators

We theoretically investigated InGaAsP/InP evanescent mode waveguide optical isolators and proposed their application to InGaAsP/InP/Si hybrid evanescent optical isolators. InGaAsP/InP evanescent optical isolators are composed of semiconductor optical amplifier (SOA) waveguides having InGaAsP multiple quantum well (MQW) active layer and upper InGaAsP waveguide layer with ferromagnetic layer. Optical isolation is obtained for evanescent optical mode in the InGaAsP waveguide layer. InGaAsP/InP/Si hybrid evanescent optical isolators are theoretically proposed based on the idea of InGaAsP/InP evanescent optical isolators. InGaAsP/InP/Si hybrid evanescent optical isolators are composed of ferromagnetic metal loaded silicon evanescent waveguides with wafer-bonded InGaAsP/InP optical gain material. The optical isolation and propagation loss are discussed with the structure of silicon evanescent waveguides, and optical isolation of 8.0 dB/mm was estimated. The concept of semiconductor evanescent mode optical isolators is feasible with InP based photonic integrated circuits and advanced silicon photonics.     

Ultralow-bending-loss surface-plasmon-polariton waveguides

We report the transmission, reflection and loss properties of 90-degree and 135-degree bent silicon waveguide and 90-degree and 135-degree bent surface-plasmon polariton (SPP) waveguides composed of metal thin film and silicon. Finite difference time domain simulation analysis shows that the maximum bending transmittances of 90-degree bent and 135-degree bent silicon waveguides are 51% and smaller than 10%, respectively, and the maximum bending transmittances of 90-degree bent and 135-degree bent SPP waveguides are 80% or so, and they are higher 30% and 70% than that of identically-bent silicon waveguides, respectively. Moreover, the SPP waveguide bend with metal thin film as inner layer of the bend and silicon as outer layer of the bend has much higher transmission than ones with silicon as the inner layer and metal thin film as the outer layer. The waveguide bend with metal as the inner layer and dielectric as the outer layer will be potential for integrated photonic devices and subsystem.     

PDL free plasma enhanced chemical vapor deposition SiC optical waveguides and devices

Planar silicon carbide (SiC) waveguides are proposed for fabrication on a silicon substrate with an oxide isolation layer. Using post deposition annealing it is possible to achieve low polarisation-dependent loss (PDL) within optical SiC waveguides fabricated using a low temperature deposition technique. The proposed waveguides are optically characterised and successfully used in power splitters and vibration sensors. Results before and after annealing cycles for those devices are discussed. The interesting optical characteristics of SiC waveguides as well as the first passive components presented open the way for photonic sensing in harsh environment where SiC is a very promising material.     

Low loss optical channel waveguides for the infrared range using niobium based hybrid sol-gel material

In this work, we report the fabrication of single-mode Nb₂O₅ based hybrid sol-gel channel waveguides. Nb₂O₅ based hybrid sol-gel material has been deposited by spin-coating on silicon substrate and channel waveguides have been fabricated by a UV direct laser writing process. Optical guided modes have been observed to confirm single-mode conditions and optical propagation loss measurements have been performed using the cut-back technique. Optical propagation losses were measured to be 0.8 dB/cm and 2.4 dB/cm at 1.31 μm and 1.55 μm respectively. These experimental results demonstrate low loss optical waveguiding within the infrared range and are very promising in view of material choice for the development of integrated optical devices for telecommunication.     

基于slot波导的硅基长波红外偏振无关定向耦合器分析

 硅基长波红外集成光电子器件是集成光学发展的一个新兴领域.阐述了利用等比例放大原理设计该波段下的slot波导的思路,分析了波导的限制因子、偏振特性等性质,并提出了工作波长为10.6 μm的偏振无关slot波导定向耦合器.     

Ultra‐low loss waveguide platform and its integration with silicon photonics

Planar waveguides with ultra‐low optical propagation loss enable a plethora of passive photonic integrated circuits, such as splitters and combiners, filters, delay lines, and components for advanced modulation formats. An overview is presented of the status of the field of ultra‐low loss waveguides and circuits, including the design, the trade‐off between bend radius and loss, and fabrication rationale. The characterization methods to accurately measure such waveguides are discussed. Some typical examples of device and circuit applications are presented. An even wider range of applications becomes possible with the integration of active devices, such as lasers, amplifiers, modulators and photodetectors, on such an ultra‐low loss waveguide platform. A summary of efforts to integrate silicon nitride and silica‐based low‐loss waveguides with silicon and III/V based photonics, either hybridly or heterogeneously, will be presented. The approach to combine these integration technologies heterogeneously on a single silicon substrate is discussed and an application example of a high‐bandwidth receiver is shown.     

Silica waveguides on silicon and their application to integrated-optic components

A marriage of optical fibre fabrication technology and LSI microfabrication technology gave birth to fibre-matched silica waveguides on silicon: thick glass layers of high-silica-content glass are deposited on silicon by flame hydrolysis, a method originally developed for fibre preform fabrication. Silica channel waveguides are then formed by photolithographic pattern definition processes followed by reactive ion etching. This high silica (HiS) technology offers the possibility of integrating a number of passive functions on a single silicon chip, as well as the possibility of the hybrid integration of both active and passive devices on silicon. This paper reviews the NTT HiS technology and its application to integrated-optic components such as optical beam splitters, optical switches, wavelength-division multi/demultiplexers and optical frequency-division multi/demultiplexers. The clear and simple waveguide structures produced by the HiS technology make it possible to design and fabricate these components with high precision and excellent reproducibility.