Transport properties of conduction electrons in n-type inversion layers in (100) surfaces of silicon

The conductivities of n-type inversion layers in (100) surfaces of p-type silicon were measured extensively as functions of electron density in the inversion layer, the ambient temperature and the applied magnetic field. Measurements were made on the carefully fabricated four “classes” of MOS field-effect transistors whose maximum mobilities at 4·2K were 14,000, 8000, 6800 and 1500 cm²/V·sec, respectively. From the temperature dependence of the mobility, dominant momentum scattering was reasonably ascribed to surfon at 100 ～ 300 K. and degenerate or non-degenerate coulomb scattering at lower temperatures as treated by Stern and Howard. From the curves of conductivity vs temperature at low temperatures and low electron concentration for specimens with high mobilities, an activation energy of 1·2 meV, relating to the shallow bound states associated with the lowest electrin sub-band, was observed. The conductivity σ_xx of the inversion layer in a strong transverse magnetic field showed behaviors like those of completely free electrons without effects belonging to its material in its oscillation pattern. That is, the peak value of σ_xx as a function of the gate voltage V_R dependend only on the Landau index. The σ_xx as a function of the magnetic field H at a constant V_R showed a similar Shubnikov-de Haas (SdH) type oscillation to that of three dimensional one. The SdH oscillation gave an “apparent” g-value g* which ranges from 2 to 5 depending on the surface carrier density n_s, due to the change in the ratios of the widths of the Landau levels to the level separation. The “reasonable” g-value of the conduction electrons in the inversion layer has been determined using a modified tilted magnetic field method. The g-value at the fixed magnetic field was independent of surface carrier density n_s and tended to 2 in the extreme strong magnetic field.Discussion is made of the g-value relating to the Landau level width and the energy gaps in the density of states under strong magnetic field.     

量子化极限情况下MOS反型层二维电子气定域态电子电导率σxx的低频效应

本文分析了量子化极限情况下MOS反型层二维电子气(2DEG)定域态电子电导率的频率特性。主要内容:(1)用费密分布函数随频率变化导出了在2DEG两种主要导电过程的频率特性。即向迁移率边激发导电过程电导率σ_ME(ω)和可变程跳跃导电过程电导率σ_VRH(ω)。发现:σ_ME(ω)和σ_VRH(ω)是一个复数。(2)说明了σ_ME(ω)有较长时间常数τ_n,对应一个低频过程。σ_VRH(ω)有较短时间常数,对应一个高频过程。(3)理论与实验作了比较,拟合结果表明,在实验条件下,向迁移率边E_c激发时间常数τ_n 3.6×10^-6。 关键词：     

Commensurability oscillations by runaway and pinned electrons

We report on an investigation of commensurability oscillations in antidot square-lattices, and show that the commensurate peaks in resistivity ρ_xxderive from two kinds of electron: runaway and quasipinned electrons. The runaway electrons, which skip away along the antidot arrays, increase the value of conductivity σ_xx; and the quasipinned electrons, which orbit some antidots for a long time, decrease the value of σ_xx. Therefore, by competition between the two different types of electron, the conductivity σ_xxis determined. The conductivity σ_yxin the antidot lattice always has dips at the peaks in ρ_xx. As a result, by combining the of values of σ_xxand σ_yx, the resistivity is determined through the orthodox relation of ρ_xx =  σ_xx/ (σ_xx²  +   σ_yx²).     

Hall-velocity limited magnetoconductivity in a 2D Wigner solid

The magnetoconductivity σ(B) of a classical 2D electron crystal on superfluid⁴He is non-linear. Experimentally we find a contribution to σ(B) which at constant field, gives σ(B)∞J _x, the current density, while at constant current, σ(B) ∞ 1/B. In this region the Hall velocity ν_H slowly approaches the ripplon velocity ν_I at the first reciprocal lattice vector, due to strong electron-ripplon interactions with the helium. The magnetoconductivity decreases sharply for ν_H>ν_I. Fluctuations in σ(B) are seen above the melting temperature.     

Magnetic Bloch states and Hall conductivity of a two-dimensional electron gas in a periodic potential without inversion center

Quantum states of 2D electrons are studied in a periodic potential without inversion center in the presence of a magnetic field. It is shown that the energy spectrum in magnetic subbands is not symmetric about the center of magnetic Brillouin zone E(k)≠E(?k). Singularities (phase branching points) of the electron wave function, which determine the quantization law of Hall conductivity σ_xy, are studied in the k space. It is found that a sharp change takes place in the number of points in the magnetic Brillouin zone and in the corresponding values of topological invariants determining the Hall conductivity of filled subbands. It is noted that the longitudinal conductivity of a lattice without inversion center placed in a magnetic field is not invariant with respect to a change in sign of the electric field, and a photovoltaic effect must arise in an ac electromagnetic field.     

Mechanisms of absolute negative photoconductivity in solids

The microscopic mechanisms governing the absolute negative photoconductivity in solids (j_ph = σ_ph, σ_ph < 0) discovered recently in concentrated ruby crystals are described. It is shown that in hopping models of photoconductivity the contribution to the current, connected with the field-induced asymmetry of processes of electron photoexcitation and recombination, dominates. It is predicted that the sign of σ_ph(ω) changes as a transition over an absorption resonance is performed.     

Absolute cross sections of electron attachment to molecular clusters: Part I. Formation of (CO2) N −

A procedure of determining absolute cross section σ^? of electron attachment to (CO₂)_N clusters at pair collisions in crossed beams is suggested. The cross section is measured as a function of energy (E = 0.1–50 eV) and of cluster mean size N in a beam $(\bar N = 2 - 4000 molecules)$ . It is found that, even at $\bar N > 200$ and E ≤ 3 eV, σ^? is equal to, or larger than, 7 × 10^?13 cm², i.e., by more than one order of magnitude exceeds the maximal cross section of CO₂ ionization by electron impact. The dependences σ^? $(\bar N,E)$ have two wide continua at E ≤ 5.2 eV and E ≥ 6.9 eV, which correlate well with known functions of CO₂ electron-impact-induced excitation. These continua are attributed largely to formation of (CO₂) _N ^? ions during electron thermalization and solvation in the clusters. At E → 0, the polarization capture of an incident electron by the cluster leads to a sharp increase in cross section σ^?(E). From the dependences σ^? $(\bar N,E)$ measured, the thermalization and sovation probabilities for electrons with E ≤ 0.8 eV and the rate of electron energy loss in the cluster are found.     

Charge exchange cross sections of carbon ions

Based on experimental data on the ion charge distributions, the cross sections of single electron loss σ _{i, i + 1} and single electron capture σ _{i, i ? 1} by carbon ions with velocities (2.7–8) × 10⁸ cm/s in different gaseous media (He, N₂, and Ar) have been obtained. Regularities of the cross section variation of the electron capture and loss by carbon ions as a function of the ion velocity, ion charge, and atomic number of the target have been for the first time studied in a wide range of the initial ion charge, from i = 0 to i = 6. A qualitative agreement of the obtained results with the published data has been established for a number of other ions. Theoretical calculations of the cross sections of single electron loss by carbon ions in helium have been carried out.     

Elimination of the mott interband s-d enhancement of the electrical resistance of nickel and platinum owing to the excitation of electrons by femtosecond laser pulses

The dependence of electrical, σ, and thermal, κ, conductivities of metals on the electron temperature T _e at high (～1 eV) T _e values has been calculated. The two-temperature states for which the temperature T _e of heated electrons exceeds the temperature T _i of ions in the crystal lattice result from the excitation of electrons by femtosecond laser pulses. It is well known that the existence of empty d levels with a high density of states near the Fermi surface (as, e.g., in nickel, platinum, and iron) leads to a pronounced enhancement of the electrical resistance (Mott, 1936). This is due to an increase in the statistical factor related to the electron transitions to the empty states induced by collisions with phonons. It is found that the excitation of the electron subsystem significantly reduces the electron-phonon scattering to unoccupied d states since the chemical potential μ(T _e ) rises above the upper edge of the d band. The decrease in the scattering probability leads to the anomalous behavior of the conductivity σ_el-ph, which increases with the temperature T _e . Such a behavior turns out to be inverse with respect to the usual situation in condensed matter.     

Analysis of the relationship between the electron-capture and electron-loss cross sections for carbon ions

The electron-loss cross sections σ _{i, i + 1} and the electron-capture cross sections σ _{i, i ? 1} for carbon ions with energies of 35–330 keV/nucleon in hydrogen and neon are determined from experimental data. It is demonstrated that, for particle energies which satisfy the condition σ _{i, i + 1} = σ _{i, i ? 1} or σ _{i, i ? 1} = σ _{i ? 1, i} , the average equilibrium ion charge can be evaluated without solving the system of differential equations for charge exchange. The dependence of the average equilibrium ion charge on the ion energy is investigated for carbon ions.     

Hot electron transverse conductivity in quantizing magnetic fields

In this work the general expression of the electron transverse conductivity tensor of an electron-phonon system being in crossed strong electric and quantizing magnetic fields is considered starting from the Kubo-Kalashnikov formula. An explicit formula for the hot electron transverse conductivity σ _xx is obtained and it is compared to a Titeica-type formula with the temperature of electrons replaced by an effective electron temperature depending on the electric field.     

Two-band BCS mechanism of superconductivity in a Ba(Fe0.9Co0.1)2As2 high-temperature superconductor

Terahertz and infrared spectra of the conductivity, σ(ν), and dielectric constant, ?(ν), of a Ba(Fe_0.9Co_0.1)₂As₂ film (T _c = 20 K) have been analyzed together with previous specific-heat and angular resolved photoelectron spectroscopy data. It has been shown that the spectra σ(ν) and ?(ν) of Ba(Fe_0.9Co_0.1)₂As₂ in the superconducting phase at T = 5 K, as well as the magnetic field penetration depth, can be described well using the standard Bardeen-Cooper-Schrieffer (BCS) model with an additive contribution of electron and hole bands. It has been found that the measured temperature dependence of the magnetic field penetration depth in a wide temperature range 5 K < T < T _c can be described only with the introduction of interband pairing interaction. The coupling constant of electron and hole bands, λ_{1, 2} = 0.1, as well as the temperature dependences of superconducting gaps in the electron and hole subsystems, has been determined using the model of two-band superconductivity developed earlier for MgB₂.     

Pressure effect on magnetization for (CoTm)90Zr10 (Tm = Cr,Mo) amorphous alloys

Temperature dependences of the forced volume magnetostriction dω/dH and the saturation magnetization σ_s for (CoTm)₉₀Zr₁₀ (Tm = Cr, Mo) amorphous alloys have recently been measured by the 3-terminal capacitance method and a vibrating sample magnetometer and magnetic balance at temperatures from 77 K to the Curie temperature T_c or the crystallization temperature. The pressure coefficient of σ_s0 at 0 K, d ln σ_s0/dp, is estimated from (dω/dH)₀ extrapolated to 0 K using the thermodynamical relation. The values of d ln σ_s0/dp increase in negative value with increasing Tm concentration. The relation between d ln σ_s0/dp and the pressure coefficient of T_c, d ln T_c/dp, estimated indirectly from dω/dH is discussed.     

Selective non-radiative transitions at excited states of the self-trapped exciton in alkali halides

Generation of F-H pairs and σ-luminescence induced by excitation of the self-trapped excitons with polarized light causing the 1s→ 2p transitions has been measured. The results were analyzed based on the assumption that the non-radiative transitions that follow photoexcitation depend only on the state reached by the excitation, irrespective of the photon energy of the excitation. The absence of the dependence on exciting photon energy of the effective yield of removal from the triplet manifold after excitation to each substate obtained from the analysis proves that the above assumption is valid. The relative non-radiative transition probabilities between the 2p substates and from the 2p-substates to the lowest triplet state, the F-H pair, the σ-luminescent state and the ground state were obtained. It is shown that the de-excitation channels from each substate are substantially different from each other. The following transitions are found to have high probabilities: from the B_1g state to the F-H pairs in KCl and KBr, from theA_g state to the σ-luminescent state and the lowest triplet state in KBr and to the lowest triplet state in KCl and from the B_2g state to the B_1g state in KCl and KBr, where A_g, B_1g and B_2g denote the states with the electron excited to the σ_u orbital, the π_u orbital lying in the (100) plane in which the (halogen)₂^?-molecular ion is situated and the other π_u orbital, respectively. The mechanisms of these non-radiative transitions were discussed.     

Percolation and the electron–electron interaction in an array of antidots

A square lattice of microcontacts with a period of 1 μm in a dense low-mobility two-dimensional electron gas is studied experimentally and numerically. At the variation of the gate voltage V _g , the conductivity of the array varies by five orders of magnitude in the temperature range T from 1.4 to 77 K in good agreement with the formula σ(V _g ) = (V _g ?V _g ^* (T))^β with β = 4. The saturation of σ(T) at low temperatures is absent because of the electron–electron interaction. A random-lattice model with a phenomenological potential in microcontacts reproduces the dependence σ(T, V _g ) and makes it possible to determine the fraction of microcontacts x(V _g , T) with conductances higher than σ. It is found that the dependence x(V _g ) is nonlinear and the critical exponent in the formula σ ∝ ? (x - 1/2) ^t in the range 1.3 < t(T, V _g ) < β.     

Kontinuierlicher Absorptionsquerschnitt von Argon im Bogenplasma

Optical pumping on Cs¹³³ atoms was performed by means of a new transmission technique. The cesium vapor was pumped towards equilibrium by an intensive circulary polarizedD ₁ orD ₂ light beam. A weakD ₁ detecting beam was polarized alternately σ⁺, σ^? and allowed one to measure continuously amount and sign of the absorption difference between σ⁺ and σ^? light. The measured signals are proportional to the electron spin polarization. The new technique was used to investigate the influence of Cs buffer gas collisions on the pumping cycle and to measure the influence of radio frequency induced Zeeman transitions on the ground state polarization. In addition the variation of magnetic field and of pumping light intensity and polarization was studied. Some measurements demonstrate the high sensitivity of the applied method. The obtained qualitative results are discussed and further experiments are proposed.     

To the theory of conduction of binary composites

The relationship between the local electric field strength in a binary composite, as an example, with its macroscopic characteristics of a nonuniform medium (effective conductivity σ _e and the derivatives of σ _e with respect to the concentrations and conductivities of the individual components) is discussed. It was demonstrated that the determination of all these parameters in a numerical experiment makes it possible to obtain a detailed information on the properties of the effective conductivity σ _e , especially near the percolation threshold, a metal-dielectric phase transition.     

Electron impact ionization of positive ions

A binary encounter model with Vriens' expression for σ_ΔE and quantum mechanical velocity distribution for the bound electron has been used to calculate electron impact ionization cross sections for ions. The calculated cross sections agree well with experimental observations.     

The equivalent vector boson approximation for intermediate mass Higgs boson production

We consider the equivalent vector boson approximation (EVBA) for the processqq→qqWW→qqH andqq→qqZZ→qqH. It is shown that the contributions σT and σL, of the transversely and longitudinally polarized vector bosonsV respectively, are comparable with each other for intermediate values ofm _H viz. 0.3 TeV to 0.6 TeV. σT can be as large as 1.5–2 times σL in this mass range. As a result the leading EVBA for σ=σL+σT overestimates the exact total cross-section by a factor, upto 2–3 even, at high energies. σT is negligible with respect to the leading contribution σL only form _H≧0.6 TeV, where EVBA is correct within 15–20%. Further the effect of the corrections to EVBA, which are naively of nonleading order, on these conclusions in the framework of the EVBA is discussed.     

Absence of renormalization group pathologies near the critical temperature. Two examples

We consider real-space renormalization group transformations for Ising-type systems which are formally defined by $$\exp \left[ { - H'(\sigma ')} \right] = \sum\limits_\sigma {T(\sigma ,\sigma ')} \exp \left[ { - H(\sigma )} \right]$$ whereT(σ, σ′) is a probability kernel, i.e., ∑_σ′ T(σ,σ′) = 1 for every configuration σ. For each choice of the block spin configuration σ′, let σ′, let μ_σ′ be the measure on spin configurations σ which is formally given by taking the probability of σ to be proportional toT(σ, σ′) exp[?H(σ)]. We give a condition which is sufficient to imply that the renormalized HamiltonianH′ is defined. Roughly speaking, the condition is that the collection of measures μ_σ′ is in the high-temperature phase uniformly in the block spin configuration σ′. The proof of this result uses methods of Olivieri and Picco. We use our theorem to prove that the first iteration of the renormalization group transformation is defined in the following two examples: decimation with spacingb = 2 on the square lattice with β < 1.36β _c and the Kadanoff transformation with parameterp on the trian gular lattice in a subset of the β,p plane that includes values of β greater than β _c .