Edge emission in zinc selenide

Three different series of edge emission bands, associated with donor—acceptor recombination, have been observed at 10 K in crystals of zinc selenide grown in a continuous flow of argon or in sealed capsules in the presence of excess zinc or selenium. It is tentatively suggested that two of these series are associated with random and preferential pairing of the same donors and acceptors.     

Studies on electrosynthesized semiconducting zinc selenide thin films

The electrosynthesis of ZnSe thin films from aqueous acidic bath onto transparent conducting oxide coated glass substrates is described. The deposition potential range suitable for the deposition has been optimized using cyclic voltammetry. The influence of various deposition parameters on the structural and optical properties of the films is described. The optical constants ‘n’ and ‘k’ and the complex dielectric constants of the electrosynthesized ZnSe thin films are estimated for various wave length region. The surface morphological studies and the composition analysis are carried out and the results are discussed. Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.     

Exciton emission from forward-biased zinc selenide Schottky diodes

Exciton emission has been observed in the forward-biased electroluminesence of ZnSe Schottky diodes free of intentionally added luminescent centres. The emission has been studied from ≈ 95° K to room temperature and is attributed to the recombination of free excitons (zero-LO phonon line). No LO phonon side bands were observed. As with exciton photoluminescence in CdS the half-width of the emission line, although a linear function of temperature, is greater than that predicted by theory. At temperatures below ≈150°K pair emission was also observed.     

Structure and nonlinear optical properties of zinc selenide films

The linear and nonlinear properties of polycrystalline zinc selenide films are investigated as a function of their deposition conditions. It is shown that the complex nonlinear refractive index correlates with the crystallite dimensions in the deposited film. This correlation suggests the localization of electrons in surface states of the crystallites as a possible mechanism of optical nonlinearity in zinc selenide films excited in the transparency band at a wavelength of 633 nm. Zh. Tekh. Fiz. 67, 60–63 (September 1997)     

Radiation damage and decay characteristics of zinc selenide emission bands and their equivalence to zinc sulphide emission bands

Irradiation of zinc selenide at ～ 20°K with electrons capable of displacing zinc atoms results in the production of cathodoluminescence emission bands at 610 and 630 nm. Enhancement of the 630 nm emission band by electron damage requires the presence of copper in the samples. These emissions have been shown to give a peak energy shift to lower energies after excitation, as is characteristic of donor-acceptor pair recombination. It is concluded that the 610 and 630 nm emission bands of zinc selenide are equivalent to the self-activated and copper green emission bands of zinc sulphide. The 530 nm emission band of zinc selenide is not sensitive to electron damage, shows no time shift and is thought to be equivalent to the copper blue emission of zinc sulphide.     

Novel chemical synthetic route and characterization of zinc selenide thin films

Zinc selenide (ZnSe) thin film have been deposited using chemical bath method on non-conducting glass substrate in a tartarate bath containing zinc sulfate, ammonia, hydrazine hydrate, sodium selenosulfate in an aqueous alkaline medium at 333 K. The deposition parameter of the ZnSe thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, electrical measurements, atomic absorption spectroscopy (AAS). The ZnSe thin layers grown with polycrystalline zinc blende system along with some amorphous phase present in ZnSe film. The direct optical band gap ‘E_g’ for the film was found to be 2.81 eV and electrical conductivity in the order of 10⁻⁸(Ω cm)⁻¹ with n-type conduction mechanism.     

Pulsed laser ablation of zinc selenide in nitrogen ambience: Formation of zinc nitride films

Zinc nitride (Zn₃N₂) thin films are prepared using pulsed laser deposition (PLD) from zinc selenide (ZnSe) target at different nitrogen ambient pressures viz. 1, 3, 5, 7 and 10 Pa. The films prepared with nitrogen pressures 1 and 3 Pa are amorphous in nature, whereas the films prepared at 5, 7 and 10 Pa exhibit the presence of cubic bixbyite Zn₃N₂ structure with lattice parameter very close to bulk of Zn₃N₂. The particle size calculated by Debye Scherrer's formula is in the nano regime. Surface morphology of the films is studied by SEM and AFM analysis. Optical parameters such as band gap, refractive index and porosity of the films are calculated. Moreover, the present study confers an outlook about how do various factors such as substrate temperature, reactive supplementing gas and laser-target interaction influence the film developing process during pulsed lased deposition.     

Ordered ultra thin ZnO films on metal substrate

Ultra thin ZnO films were prepared on metal Mo(1 1 0) substrate under ultrahigh vacuum conditions either by depositing Zn in 10⁻⁵ Pa oxygen or by oxidizing pre-deposited Zn films. The films were characterized in situ by various surface analytical techniques, including Auger electron spectroscopy, X-ray and ultraviolet photoelectron spectroscopies, low energy electron diffraction and high resolution electron energy loss spectroscopy. The results indicate that a long-range ordered and stoichiometric ZnO films are formed along its [0 0 0 1] direction. The annealing experiments show that as-prepared ZnO films are thermal stable until 800 K. This study provides constructive information to further understand the growth mechanism of ZnO films on different substrates.     

Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications

We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10^-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr²⁺ emission in the technologically important 2–2.6 μm spectral range. PACS 78.66.hf; 78.66.-w; 78.55.-m; 78.66.Bz; 78.20.-e     

Low-energy excited states of 3d transition metal ions in zinc selenide

The results of studying the impurity heat capacity of Zn_1?x M _xSe (M = Cr²⁺, Fe²⁺, Ni²⁺, Mn²⁺) solid solutions in the temperature range 1.8–20.0 K are presented. A heat-capacity method is described and applied for the measurement of the intracenter-transition energy in these systems. The role of the Jahn-Teller effect in the formation of low-energy excited states of 3d ions in ZnSe is discussed.     

Photoluminescence of sodium-implanted zinc selenide

Luminescence measurements indicate that Na acceptors implanted into ZnSe become optically active after annealing at 500°C. The spectra show a strong Na dependence for both the R series band and the I^Y₁ exciton line. In this work Ne-implanted and unimplanted samples were annealed and measured with the Na-implanted material to isolate defect-induced spectral features. Several new bands resulting from radiation damage are reported, along with annealing properties of the defect bands and Na-related luminescence.     

Effect of deposition pressure on structural, optical and electrical properties of zinc selenide thin films

ZnSe thin films have been prepared by inert gas condensation method at different gas pressures. The influence of deposition pressure, on structural, optical and electrical properties of polycrystalline ZnSe films have been investigated using X-ray diffraction (XRD), optical transmission and conductivity measurements. The X-ray diffraction study reveals the sphalerite cubic structure of the ZnSe films oriented along the (1 1 1) direction. The structural parameters such as particle size [6.65-22.24 nm], strain [4.01-46.6×10⁻³ lin⁻² m⁻⁴] and dislocation density [4.762-18.57×10¹⁵ lin m⁻²] have been evaluated. Optical transmittance measurements indicate the existence of direct allowed optical transition with a corresponding energy gap in the range 2.60-3.00 eV. The dark conductivity (σ_d) and photoconductivity (σ_ph) measurements, in the temperature range 253-358 K, indicate that the conduction in these materials is through an activated process having two activation energies. σ_d and σ_ph values decrease with the decrease in the crystallite size. The values of carrier life time have been calculated and are found to decrease with the reduction in the particle size. The conduction mechanism in present samples has been explained, and the density of surface states [9.84-21.4×10¹³ cm⁻²] and impurity concentration [4.66-31.80×10¹⁹ cm⁻³] have also been calculated.     

Thermal conductivity of polycrystalline zinc selenide

The thermal conductivity of optically transparent zinc selenide polycrystals fabricated by vapor deposition was experimentally studied in the temperature range 80–400 K in the as-deposited state and after deformation along the crystal growth direction followed by recrystallization. In the low-temperature range, textured ZnSe samples exhibit anisotropy of the thermal conductivity, which also persisted after their deformation and recrystallization. The anisotropy of the thermal conductivity is caused by phonon scattering by dislocations oriented along the crystal growth direction. The thermal conductivity of ZnSe at T>270 K is shown to be limited by the scattering of acoustic phonons by optical phonons.     

Cathodoluminescence of laser-annealed erbium-implanted zinc selenide

After zinc selenide crystals implanted with erbium ions had been annealed with a continuous wave (cw) krypton ion laser it was found that the cathodoluminescence emission intensity of the implanted erbium ions had been considerably enhanced. In order to gain some understanding of the physical processes involved in such an enhancement a comparison was made between thermal annealing and laser annealing of the implanted crystals. Clear differences were found in the cathodoluminescence spectra of the thermally annealed and laser-annealed samples. The increase in cathodoluminescence emission intensity produced by laser annealing was attributed to the production of selenium vacancies in the vicinity of the implanted erbium ions and leads us to suggest the possibility of site selective annealing by this technique.     

Piezoelectric textures of polycrystalline zinc selenide

The preliminary results of an investigation of the structure and electrophysical properties of CVD-grown polycrystalline ZnSe are reported. A weak multicomponent texture is observed which bears upon the piezoelectric effect, the characteristic features of the electric polarization, and the characteristic elastic oscillations of samples of regular shape. Zh. Tekh. Fiz. 69, 141–143 (February 1999)