Stark Effect Dependence on Hydrogenic Impurities in GaAs ParabolicQuantum-Well Wires

The ground-state and lowest excited-state binding energies of ahydrogenic impurity in GaAs parabolic quantum-well wires (QWWs)subjected to external electric and magnetic fields are investigated using the finite-difference method within the quasi-one-dimensional effective potential model. We define an effective radius ρ_eff of a cylindrical QWW, which can describe the strength of the lateral confinement. For the ground state, theposition of the largest probability density of electron in x-y plane is located at a point, while for the lowest excited state, is located on a circularity whose radius is ρ_eff. The point and circularity are pushed along the left half of the center axis of the quantum-well wire by the electric field directed along theright half. When an impurity is located at the point or within the circularity, the ground-state or lowest excited-state binding energies are the largest; when the impurity is apart from the point or circularity, the ground-state or lowest excited-state binding energies start to decrease.     

Combined effects of hydrostatic pressure and electric field on the donor binding energy and polarizability in laterally coupled double InAs/GaAs quantum-well wires

This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a nonlinear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum well wires.     

Simultaneous effects of hydrostatic pressure and electric field on impurity binding energy and polarizability in coupled InAs/GaAs quantum wires

This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. Calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a non-linear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum-well wires.     

In_xGa_（1－x）As缓冲层上In_yGa_（1－y）As／（Al）Ga

本文中，发现在Ｉｎ＿ｘＧａ＿(１－ｘ)Ａｓ缓冲层上非故意掺杂的ＩｎｙＧａ＿(１－ｙ)Ａｓ／（Ａｌ）ＧａＡｓ超晶格样品中存在着两个互相反向的自建电场区，一个位于样品表面，另一个位于Ｉｎ＿ｘＧａ＿(１－ｘ)Ａｓ缓冲层和超晶格界面．据此，合理地解释了样品的光伏测试结果，并对此类样品的ＭＯＣＶＤ生长工艺给予指导．     

The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1 − xAlxAs double quantum well under the external fields

The combined effects of hydrostatic pressure and temperature on donor impurity binding energy in GaAs/Ga_0.7Al_0.3As double quantum well in the presence of the electric and magnetic fields which are applied along the growth direction have been studied by using a variational technique within the effective-mass approximation. The results show that an increment in temperature results in a decrement in donor impurity binding energy while an increment in the pressure for the same temperature enhances the binding energy and the pressure effects on donor binding energy are lower than those due to the magnetic field.     

Binding energies of donor impurities in modulation-doped double quantum wells under an electric field

In this study, we have investigated theoretically the binding energies of shallow donor impurities in modulation-doped GaAs/Al_0.33Ga_0.67As double quantum wells (DQWs) under an electric field which is applied along the growth direction for different doping concentrations as a function of the impurity position. The electronic structure of modulation-doped DQWs under an electric field has been investigated by using a self-consistent calculation in the effective-mass approximation. The results obtained show that the carrier density and the depth of the quantum wells in semiconductors may be tuned by changing the doping concentration, the electric field and the structure parameters such as the well and barrier widths. This tunability gives a possibility of use in many electronic and optical devices.     

The electric field dependence of a donor impurity in graded <Emphasis Type="Bold">GaAs</Emphasis> quantum wires

The effect of the electric field on the binding energy of the ground state of a shallow donor impurity in a graded GaAs quantum-well wire (GQWW) was investigated. The electric field was applied parallel to the symmetry axes of the wire. Within the effective mass approximation, we calculated the binding energy of the donor impurity by a variational method as a function of the wire dimension, applied electric field, and donor impurity position. We show that changes in the donor binding energy in GQWWs strongly depend not only on the quantum confinement, but also on the direction of the electric field and on the impurity position. We also compared our results with those for the square quantum-well wire (SQWW). The results we obtained describe the behavior of impurities in both square and graded quantum wires. PACS 68.65.-k; 71.55.-i; 71.55.Eq     

Oscillatory behaviour in the energy and nonlinear optical rectification spectra of elliptic quantum rings under electric field: influence of impurity and eccentricity

We have theoretically investigated the electronic properties and nonlinear optical rectification spectra of GaAs/AlGaAs anisotropic quantum ring, modelled by an outer ellipsis and an inner circle, in connection to the presence of a donor off-centre impurity, structural distortions and in-plane electric field. The one-electron energy spectrum and wave functions are found using the adiabatic approximation and the finite element method within the effective-mass model. The energy spectrum of concentric ring reveals an anomalous oscillatory behaviour in the region of relatively small values of the electric field (< 12?kV/cm) followed by linear Stark effect at higher field values. We showed that this unusual behaviour is strongly affected by the ratio of the outer/inner ring radii, the displacement of the inner circle (eccentricity) along the x or y axis and the impurity presence. The related nonlinear optical rectification spectra present maxima whose positions mirror this oscillatory behaviour and consequently can be used as an excellent tool to distinguish the presence of an impurity or the direction of the eccentricity.     

Composition Dependence of Electrocaloric Effect in (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 Single Crystals

Composition dependence of electrocaloric effect is investigated in (1-x)Pb(Mg_1/3Nb_2/3)O_3-xPbTiO₃ single crystals by using an eighth-order Landau—Devonshire theory. The applied electric field along [001] direction reduces the ferroelectric-ferroelectric phase transition temperatures, but increases the Curie temperatures. The electrocaloric coefficients of tetragonal phase are much larger than that of rhombohedral and monoclinic phase. A negative electrocaloric effect is observed near the M_C-T phase transition in 0.69 Pb(Mg_1/3Nb_2/3)O₃-0.31 PbTiO₃ single crystal. The application of a strong enough electric field results in a high adiabatic temperature change over a broad range of temperature. Therefore, it would be useful to construct a solid state cooling cycle over a broad temperature range for practical applications.     

Donor impurity states in coupled quantum well wires under hydrostatic pressure and applied electric field

In this work we study the binding energy of the ground state for a hydrogenic donor impurity in laterally coupled GaAs/Ga_1−xAl_xAs quantum well wires, considering the simultaneous effects of hydrostatic pressure and applied electric field. We have used a variational method and the effective mass and parabolic band approximations. The low dimensional structure consists of two quantum well wires with rectangular transverse section coupled by a central Ga_1−xAl_xAs barrier. Our results are reported for several sizes of the structure and we have taken into account variations of the impurity position along the growth direction of the heterostructure.     

Laser dressed donor impurities in free-standing GaAs films under an electric field

The laser-field dependence of the shallow donor states in a free-standing thin GaAs film under an external static field is studied within the effective mass approximation. The laser dressing effects are considered for the confinement potential of the well as well as for the impurity Coulomb interaction distorted by the dielectric mismatch at interfaces. We found that (i) the increase of the laser intensity dramatically modifies the electron potential energy, which establishes the quantum confinement; (ii) the ground state subband energy is significantly enhanced by the electrostatic self-energy arising from the interaction between the electron and its images; (iii) the impurity binding is much larger than those of the dielectrically homogenous case and it becomes stronger sensitive to the laser intensity variation; (iv) under an electric field parallel to the growth direction, the inversion symmetry with respect to the quantum well center is broken and a red/blue-shift of the binding energy, depending on the impurity position along the field direction, occurs. Therefore, the shallow donor energy levels in the free-standing thin films can be tuned in a wide range by proper tailoring of the structure parameters (well size, impurity position) as well as by varying the external applied fields.     

纤锌矿In_(0.19)Ga_(0.81)N/GaN量子阱中光学声子和内建电场对束缚极化子结合能的影响

用改进的Lee-Low-Pines变分方法研究纤锌矿In0.19Ga0.81N/GaN量子阱结构中束缚极化子能量和结合能等问题,给出基态结合能、不同支长波光学声子对能量和结合能的贡献随阱宽和杂质中心位置变化的数值结果.在数值计算中包括了该体系中声子频率的各向异性和内建电场对能量和结合能的影响、以及电子和杂质中心与长波光学声子的相互作用.研究结果表明,In0.19Ga0.81N/GaN量子阱材料中光学声子和内建电场对束缚极化子能量和结合能的贡献很大,它们都引起能量和结合能降低.结合能随着阱宽的增大而单调减小,窄阱中减小的速度快,而宽阱中减小的速度慢.不同支声子对能量和结合能的贡献随着阱宽的变化规律不同.没有内建电场时,窄阱中,定域声子贡献小于界面和半空间声子贡献,而宽阱中,定域声子贡献大于界面和半空间声子贡献.有内建电场时,定域声子贡献变小,而界面和半空间声子贡献变大,声子总贡献也有明显变化.在In0.19Ga0.81N/GaN量子阱中,光学声子对束缚极化子能量和结合能的贡献比GaAs/Al0.19Ga0.81As量子阱中的相应贡献(约3.2—1.8和1.6—0.3 meV)约大一个数量级.阱宽(d=8 nm)不变时,在In0.19Ga0.81N/GaN量子阱中结合能随着杂质中心位置Z0的变大而减小,并减小的速度变快.随着Z0的增大,界面和半空间光学声子对结合能的贡献缓慢减小,而定域光学声子的贡献缓慢增大.     

The nonlinear optical rectification of an ellipsoidal quantum dot with impurity in the presence of an electric field

We have performed theoretical calculation of second-order nonlinear optical rectification (OR) coefficient in a typical GaAs/AlGaAs QD with ellipsoidal confinement potential in the presence of an impurity and an applied electric field. Using an appropriate coordinate transformation and the perturbation theory, we have investigated the OR coefficient as a function of incident photon energy. Calculation results show that the values of OR coefficient increase with an increase of applied electric field. However, the values decrease with increases in confinement strength and ellipticity constant. Additionally, the presence of a donor impurity shifts the OR coefficient peak positions to higher energies (blueshift), contrary to that of an acceptor impurity.     

Fe_3O_4单晶薄膜磁性电场调控的微磁学仿真研究

磁性薄膜磁学特性电场调控的相关研究对开发新型低功耗磁信息器件具有突出意义.本文基于电场调控磁性的基本理论,以OOMMF(Object Oriented Micro-Magnetic Frame)微磁学仿真软件为工具,研究了电场对生长于PZN-PT单晶衬底上Fe_3O_4单晶薄膜磁学特性的调控.研究结果显示:无外加电场时,薄膜表现出典型的软磁特性;沿衬底[001]方向施加的外加电场可以使得薄膜矫顽力、矩形比等磁学特性发生显著改变:当外加磁场沿[100]([010])时,施加正值(负值)电场强度可以显著增大薄膜的矫顽力与矩形比,当电场强度不小于0.6 MV/m时薄膜矩形比达到1.这是因为外加电场导致薄膜产生单轴应力各向异性,使得薄膜的等效磁各向异性发生了从无外电场下的面内四重磁晶各向异性向高电场下的近似单轴磁各向异性的过渡.外加1 MV/m与-1 MV/m的电场时等效易磁化轴分别沿[100]与[010]方向.另外,外加1 MV/m(-1 MV/m)的电场强度可以使得铁磁共振的频率增大(减小)接近1 GHz.     

CT-6B托卡马克等离子体角向转动的光谱测量

利用高分辨光谱测量系统，根据杂质离子谱线ＯⅡ４６４.２ｎｍ，ＣⅢ４６４.７ｎｍ和氢Ｈα谱线的多普勒位移，测量了ＣＴ-６Ｂ托卡马克等离子体角向转动速度的径向分布．结果表明：杂质离子的角向转动速度的方向在等离子体内部为电子逆磁漂移方向，其线速度在小半径约９ｃｍ处达到极大值３.５ｋｍ／ｓ；在接近孔阑ｒ＝１０ｃｍ处，反转为离子逆磁漂移方向．由此导出等离子体内部的径向电场向里，其最大值为１８Ｖ／ｃｍ．中性氢原子只存在其方向为电子逆磁漂移方向的角向转动分量，其数值较杂质离子谱线所得结果要低．最后对所得的结果作了初步的讨论 关键词：     

交叉电场和磁场下GaAs/AIGaAs超晶格子带结构

本文用有效质量理论计算了加平行磁场(方向平行于GaAs/AlGaAs界面)和垂直电场(方向垂直于界面)的超晶格子带结构和光跃迁。加平行磁场后,空穴子带的二重简并解除,轻重空穴混合。加电场后,产生Stark位移,电子和空穴能级发生一定位移。最后,讨论了磁光跃迁概率。     

Donor impurity in vertically-coupled quantum-dots under hydrostatic pressure and applied electric field

In this work we make a predictive study on the binding energy of the ground state for hydrogenic donor impurity in vertically-coupled quantum-dot structure, considering the combined effects of hydrostatic pressure and in growth-direction applied electric field. The approach uses a variational method within the effective mass approximation. The low dimensional structure consists of three cylindrical shaped GaAs quantum-dots, grown in the z-direction and separated by Ga_1-xAl_xAs barriers. In order to include the pressure dependent Γ – X crossover in the barrier material a phenomenological model is followed. The main findings can be summarized as follows: 1) for symmetrical and asymmetrical dimensions of the structures, the binding energy as a function of the impurity position along the growth direction of the heterostructure has a similar behavior to that shown by the non-correlated electron wave function with maxima for the impurity in the well regions and minima for the impurity in the barrier regions, 2) for increasing radius of the system, the binding energy decreases and for R large enough reaches the limit of the binding energy in a coupled quantum well heterostructure, 3) the binding energy increases for higher Aluminum concentration in the barrier regions, 4) depending of the impurity position and of the structural dimensions of the system (well width and barrier thickness) – and because changing the height of the potential barrier makes possible to induce changes in the degree of symmetry of the carrier-wave function –, the electric field and hydrostatic pressure can cause the impurity binding energy increases or decreases, and finally 5) the line-shape of the binding energy curves are mainly given by the line-shape of the Coulomb interaction.     

The hydrostatic pressure and temperature effects on Raman scattering of a hydrogenic impurity in a disc-shaped quantum dot

Using the perturbation method and the effective-mass approximation, we studied the combined effects of hydrostatic pressure and temperature on Raman scattering in a disc-shaped quantum dot with a parabolic potential in the presence of an electric field. The differential cross-section involved in this process is calculated. Numerical calculations on a typical GaAs quantum dot are performed. The results show that not only the impurity but also the temperature and the hydrostatic pressure have an influence on the differential cross-section of the system.     

Al/GaAs表面量子阱界面层的原位光调制反射光谱研究

用分子束外延（MBE）方法在GaAs表面量子阱上外延生长不同厚度的Al层，以超高真空下的原位光调制光谱（PR）作为测量手段，研究Al扩散形成的表面势垒层对于GaAs表面量子阱中带间跃迁峰位和峰形的影响.根据跃迁峰的变化，采用有效质量近似理论计算出了Al和GaAs 的互扩散长度为0.5nm，这是半导体工艺中的一个重要常数. 关键词： Al GaAs 原位光调制反射光谱（PR） 分子束外延（MBE）     

Non-perturbative multiphoton excitation studies in an excitonic coupled quantum well system using high-intensity THz laser fields

Multiphoton excitations and nonlinear optical properties of exciton states in GaAs/Al_xGa_(1-x)As coupled quantum well structure have been theoretically investigated under the influence of a time-varying high-intensity terahertz(THz) laser field. Non-perturbative Floquet theory is employed to solve the time-dependent equation of motion for the laser-driven excitonic quantum well system. The response to the field parameters, such as intensity and frequency of the laser electric field on the state populations, can be used in various optical semiconductor device applications, such as photodetectors,sensors, all-optical switches, and terahertz emitters.