Ferromagnetism in defective yttria-stabilized zirconia

Significant research attention has been devoted to identifying and synthesizing new magnetic materials via doping of non-magnetic materials. The material defects offer an approach to stabilize ferromagnetism in non-magnetic materials such as oxygen-deficient HfO₂ and oxygen-deficient ZrO₂. In this study, we demonstrated room-temperature ferromagnetism via nitrogen ion implantation on yttria-stabilized zirconia (YSZ) single crystals. The results of structural and chemical analyses indicate the formation of a distinct surface layer through the implantation of nitrogen ions and potential oxygen vacancies. The lattice constant in this surface layer increased by 0.6% compared to the bulk value. Nitrogen ions were observed in this region, and their concentration was estimated to be 2.32 atoms per unit cell. In contrast to the lack of magnetic hysteresis in a YSZ single crystal, ferromagnetic hysteresis was observed in the ion-implanted YSZ crystals, owing to defects—nitrogen ions and oxygen vacancies in the surface layer.     

Absorption and emission spectra of yttria-stabilized zirconia and magnesium oxide

We have investigated the luminescence and absorption spectra of doped and undoped ZrO₂-Y₂O₃ and MgO crystals at room- and low temperatures. The crystals used are partly doped with the transition metals Ni, Co, Cr and the rare earth Pr. The emission spectra were obtained under laser excitation at different wavelengths. The observed optical emission and absorption bands of the MgO crystals doped with Ni, Co and Cr correspond to transitions between spin-orbit split crystal field levels of the transition metals. Luminescence and absorption bands of undoped yttria-stabilized zirconia (YSZ) crystals are due to color centers, absorption bands of the doped YSZ correspond to the well known transitions of the Ni²⁺, Co²⁺ and Pr³⁺ ions, respectively. The emission spectra of the doped YSZ obtained under various laser excitations can be explained by an energy transfer process between the color center and the doping materials. The influence of annealing on the absorption and emission of Pr³⁺/Pr⁴⁺ is investigated.     

Influence of ZrO2 in HfO2 on reflectance of HfO2/SiO2 multilayer at 248 nm prepared by electron-beam evaporation

Influence of ZrO₂ in HfO₂ on the reflectance of HfO₂/SiO₂ multilayer at 248 nm was investigated. Two kinds of HfO₂ with different ZrO₂ content were chosen as high refractive index material and the same kind of SiO₂ as low refractive index material to prepare the mirrors by electron-beam evaporation. The impurities in two kinds of HfO₂ starting coating materials and in their corresponding single layer thin films were determined through glow discharge mass spectrum (GDMS) technology and secondary ion mass spectrometry (SIMS) equipment, respectively. It showed that between the two kinds of HfO₂, either the bulk materials or their corresponding films, the difference of ZrO₂ was much larger than that of the other impurities such as Ti and Fe. It is the Zr element that affects the property of thin films. Both in theoretical and in experimental, the mirror prepared with the HfO₂ starting material containing more Zr content has a lower reflectance. Because the extinction coefficient of zirconia is relatively high in UV region, it can be treated as one kind of absorbing defects to influence the optical property of the mirrors.     

Large room temperature magnetoresistance in YSZ doped La0.67Ba0.33MnO3 composite

The temperature dependence of the resistivity for composite samples of (1−x)La_0.67Ba_0.33MnO₃+xYSZ(LBMO/YSZ) with different YSZ doping level of x has been investigated in a magnetic field range of 0-7000 Oe, where the YSZ represents yttria-stabilized zirconia (8 mol% Y₂O₃+92 mol% ZrO₂). With increasing YSZ doping level, the range of 0-10%, the metal-insulator transition temperature (T_P) decreases. However, the resistivity, specially the low temperature resistivity, increases. Results also show that the YSZ doping level has an important effect on a low field magnetoresistance (LFMR). In the magnetic field of 7000 Oe, a room temperature magnetoresistance value of 20% was observed for the composite with a YSZ doping level of 2%, which is encouraging for potential application of CMR materials at room temperature and low field.     

Characterization of defect type and dislocation density in double oxide heteroepitaxial CeO2/YSZ/Si(001) films

In order to qualitatively and quantitatively analyze the structural defects including the defect types and their concentrations in oxide heteroepitaxial films, a new X-ray rocking-curve width-fitting method was used in the case of doubleCeO₂/YSZ/Si (YSZ=yttria-stabilized ZrO₂) films that were prepared by pulsed laser deposition. Two main defect types, angular rotation and oriented curvature, were found in both CeO₂ and YSZ. Dislocation densities of CeO₂ and YSZ, which were obtained from the angular rotations, are functions of the YSZ thickness. A distinct two-step correlation between dislocation densities of CeO₂ and YSZ was found that as the dislocation density of YSZ is higher than 2.4×10¹¹ cm^-2, the dislocation density of CeO₂ shows a high sensitivity with that of YSZ compared with the low relativity in lower dislocation density (<2.4×10¹¹ cm^-2). In addition, YSZ always has higher dislocation densities and oriented curvatures than CeO₂ in each specimen, which can be attributed to the smaller mosaic domain sizes in YSZ than in CeO₂ as observed by high-resolution transmission electron microscopy. Received: 12 August 2002 / Accepted: 14 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +81-3/5734-3369, E-mail: chun_hua_chen@hotmail.com     

Methods of electron microdiffraction and X-ray analysis in structure study of nanodisperse partially stabilized ZrO2 powders

Analytical electron microscopy (AEM) has been used to study both structure and morphology of partially yttria-stabilized zirconia dioxide nanopowders (YSZ) obtained by wet-chemical methods (glycine and azeotropic distillation) and ceramics produced from them. Both morphological and structural inhomogeneity of nanopowders obtained by glycine (glc) method has been estimated. Besides the tetragonal ZrO₂ phase (results of X-ray analyses) the cubic phase of ZrO₂ with different degree of crystallinity has been estimated by Electron Microdiffraction (EMD) methods. In powders obtained by azeotropic distillation (dest) method besides the amorphous phase (identified in X-ray investigations) the high disperse cubic zirconia phase has been identified using high local EMD method. It has been detected the yttrium influence on the degree of crystallinity in nanopowders obtained by azeotropic distillation method without yttria (dest-0YSZ) and with 5 wt % Y₂O₃ (dest-5YSZ). It has been determined the difference in ceramic morphology produced from these powders. Ceramics mode of nanopowders containing yttria (glc-5YSZ and dest-5YSZ) have a homogeneous surface which consists of different size globules (0.1–0.6 μm) and contains some little pores (～370 nm). Ceramics mode of nanopowders without yttria have inhomogeneous surface with numerous cracks. Separate parts of the latter ceramics consist of globules, their sizes are of 0.2–0.5 μm.     

First‐principles study on the concentrations of native point defects in high‐dielectric‐constant binary oxide materials

The intrinsic concentrations of point defects in high‐k binary oxide materials of HfO₂, ZrO₂, Y₂O₃ and La₂O₃ are evaluated on the basis of first‐principles calculations. Oxygen defects are found to dominate over a wide range of the oxygen chemical potential. Neutral oxygen vacancies are likely to be responsible for electron trapping in the investigated materials. In HfO₂ and ZrO₂, oxygen Frenkel pairs are likely to form. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Computer modelling of ion migration in zirconia

Defect structure and migration pathways of cations in cubic zirconia (ZrO₂) have been calculated using two computer modelling techniques. The first is based on the Mott–Littleton method, which considers defects to be embedded in an otherwise perfect crystal, and the second is the supercell approach, which allows finite defect concentrations to be modelled. Using the first approach, migration pathways for both intrinsic and dopant cations have been calculated. Activation energies ranging from 3.1 to 5.8?eV have been calculated assuming a vacancy mechanism. For highly charged dopants a curved pathway was found to be favoured over a straight pathway. The effect of stabilizer concentration on the properties of the system investigated has been analysed using the supercell method; 3 × 3 × 3 and 4 × 4 × 4 supercells containing 3–40?mol% calcia (CaO) or yttria (Y₂O₃) have been constructed assuming a random distribution of both dopant cations and oxygen vacancies. After relaxation the oxygen vacancies were found to be located adjacent to the zirconium cations in the CaO-doped system, while remaining randomly ordered in the Y₂O₃-doped system. Also cation vacancies were created, and after relaxation they were surrounded in all systems (CaO-stabilized ZrO₂ and Y₂O₃-stabilized ZrO₂) on average by 2.7 oxygen vacancies.     

Distinct correlation between CeO2 and YSZ in out-of-plane and in-plane mosaic dispersions of heteroepitaxial CeO2/YSZ/Si(001) films

The structural correlations including the lattice constants and the mosaic dispersions between CeO₂ and yttria-stabilized ZrO₂ (YSZ) in CeO₂/YSZ/Si(001) heteroepitaxial films have been investigated by out-of-plane and in-plane X-ray-diffraction techniques. The distinct linear correlations of the full width at half-maximum (FWHM) of the ω scan between CeO₂ and YSZ have been found in both directions. CeO₂ always has a 0.7° lower FWHM of the ω scan than YSZ in the out-of-plane direction, but has a 2.6° higher FWHM in the in-plane direction. A possible relationship between the out-of-plane and in-plane FWHMs of the ω scans has been demonstrated with a lattice-rotation model. Besides, the lattice constants of CeO₂ are dependent on the FWHMs of the YSZ ω scans: as the FWHM is below 3.5°, CeO₂ has a tetragonal distortion, and as the FWHM is higher than 3.5°, CeO₂ exhibits a cubic structure without distortion. The results are of great interest, both for the fundamental understanding of the film-growth mechanisms and for potential applications. Received: 11 September 2000 / Accepted: 5 June 2001 / Published online: 30 August 2001     

Monoclinic-tetragonal phase transition in zirconium and hafnium dioxides: A high-temperature raman scattering investigation

Zirconium dioxide ZrO₂ and hafnium dioxide HfO₂ are investigated using high-temperature Raman spectroscopy in the temperature range 300–2080 K, including the regions of the monoclinic-tetragonal phase transitions revealed in these materials. An analysis is made of the specific features observed in the evolution of the high-temperature Raman spectra of both the monoclinic (m) and tetragonal (t) modifications of ZrO₂ and HfO₂ with variations in the temperature. The polarized Raman spectra of the metastable tetragonal phases in solid solutions based on zirconia and hafnia are used to identify the symmetry of vibrations in the spectra of the tetragonal modifications of pure zirconium and hafnium dioxides, which exist at high temperatures.     

(La0.75Sr0.25)(Cr0.5Mn0.5)O3/YSZ composite anodes for methane oxidation reaction in solid oxide fuel cells

The synthesis and performance of (La_0.75Sr_0.25)(Cr_0.5Mn_0.5)O₃/Y₂O₃–ZrO₂ (LSCM/YSZ) composites are investigated as alternative anodes for the direct utilization of methane (i.e., natural gas) in solid oxide fuel cells. Addition of YSZ phase greatly improves the adhesion and reduces the electrode polarization resistance of the LSCM/YSZ composite anodes. LSCM/YSZ composite anodes show reasonably good performance for the methane oxidation reaction in wet CH₄ and the best electrode performance was achieved for the composite with LSCM contents of 50–60 wt.% with polarization resistances of 2–3 Ω cm² in 97% CH₄/3% H₂O at 850 °C. The electrode impedance for the methane oxidation in wet CH₄ on the LSCM/YSZ composite anodes was characterized by three separable arcs and the electrode behavior could be explained based on the ALS model for the reaction on the MIEC electrode. The results indicate that electrocatalytic activity of the LSCM/YSZ composite anodes for the methane oxidation is likely limited by the oxygen vacancy diffusion in the substituted lanthanum chromite-based materials.     

Characterization of plasma fluorinated zirconia for dental applications by X-ray photoelectron spectroscopy

This paper discusses fluorination of biomedical-grade yttria-stabilized zirconia (YSZ) by sulfur hexafluoride plasma treatment and characterization of near-surface chemistry products by X-ray photoelectron spectroscopy (XPS). Deconvolution of the Zr 3d and Y 3d XPS core level spectra revealed formation of both ZrF₄ and YF₃. In addition, seven-coordinate ZrO₂F₅ and/or ZrO₃F₄ phases were deconvolved, retaining similar atomic coordination as the parent oxide and believed to have formed by substitutional displacement of oxygen by fluorine. No additional components attributed to yttria oxyfluoride were deconvolved. Argon ion sputter depth profiling determined the overlayer to be ∼4.0 nm in thickness, and angle resolved XPS showed no angle dependence on component percentages likely due to fluorination extending into the grain boundaries of the polycrystalline substrates. Importantly, the conversion layer did not induce any apparent change in zirconia crystallinity by inspection of Zr-O 3d_5/2,3/2 peak positions and full-width-at-half-maximum values, important for retaining its desirable mechanical properties.     

Effects of packing materials on the sensitivity of RadFET with HfO2 gate dielectric for electron and photon sources

The radiation sensing field effect transistor (RadFET) with SiO₂ gate oxide has been commonly used as a device component or dosimetry system in the radiation applications such as space research, radiotherapy, and high-energy physics experiments. However, alternative gate oxides and more suitable packaging materials are still demanded for these dosimeters. HfO₂ is one of the most attractive gate oxide materials that are currently under investigation by many researchers. In this study, Monte Carlo simulations of the average deposited energy in RadFET dosimetry systems with different package lid materials for point electron and photon sources were performed with the aim of evaluating the effects of package lids on the sensitivity of the RadFET by using HfO₂ as a gate dielectric material. The RadFET geometry was defined in a PENGEOM package and electron–photon transport was simulated by a PENELOPE code. The relatively higher average deposited energies in the sensitive region (HfO₂ layer) for electron energies of 250?keV–20?MeV were obtained from the RadFET with the Al₂O₃ package lid despite of some deviations from the general tendency. For the photon energies of 20–100?keV, the average amount of energy deposited in RadFET with Al₂O₃ package was higher compared with the other capped devices. The average deposited energy in the sensitive region was quite close to each other at 200?keV for both capped and uncapped devices. The difference in the average deposited energy of the RadFET with different package lid materials was not high for photon energies of 200–1200?keV. The increase in the average deposited energy in the HfO₂ layer of the RadFET with Ta package lid was higher compared with the other device configurations above 3?MeV.     

Optical and structural properties of thin films deposited from laser fused Zirconia,Hafnia, and Yttria

The optical and structural properties of films deposited from laser sintered Zirconia (ZrO₂), Hafnia (HfO₂), and Yttria (Y₂O₃) and from the commercially available (unprocessed material) Zirconia, Hafnia and Yttria, were studied and compared. All the films had low absorption. Films deposited from the laser sintered material had very low optical inhomogeneity. ZrO₂ films showed negative inhomogeneity for films deposited from the unprocessed material. The refractive index increased for ZrO₂ films deposited from the laser sintered material. HfO₂ and Y₂O₃ films showed positive inhomogeneity when deposited from the unprocessed material. The refractive index of the films of these materials decreased when deposited from the laser sintered material. The thin films of ZrO₂ and Y₂O₃ prepared from laser sintered material had stable monoclinic and cubic structures respectively while HfO₂ films were found to be amorphous.     

Ultraviolet excitation of rare-earth-doped YSZ crystals

Abstract

The optical properties of nominally pure and Er³⁺- or Pr³⁺ -doped yttria-stabilized zirconia single crystals were investigated under UV light excitation. In the excitation spectra of both types of doped crystals, a broad UV band is observed. Under excitation with light of different wavelengths inside this band, the luminescence features of the doped crystals are different. YSZ: Pr³⁺ samples exhibit the characteristic 4f → 4f emission of the Pr³⁺ ions. In YSZ: Er³⁺ crystals, both the Er³⁺ ion and the intrinsic luminescence are observed. Host to Er³⁺ ion radiative energy-transfer is also demonstrated. No dependence of the transfer process with the excitation wavelength was found. These results suggest that the UV band in Er³⁺ -doped crystals is associated with the lattice-dopant ion interaction rather than with the 4f5d interconfigurational band of the Er^3? ions.     

First principle calculation of accurate native defect levels in CaF<Subscript>2</Subscript>

We report on the first principle density functional calculation of the charge transition levels of native defects (vacancies and interstitials) in CaF₂ structure. The transition level was defined as the Fermi level where two charge states of given defect have the same formation energy. The common error in the band gap inherited to semiclocal density functional has been accounted for by incorporating the hybrid density functional method, leading to correct placement of the transition levels within the band gap. The band gap size from hybrid calculation has been validated using the full potential, Linearized Augmented Planewave method with the Modified-Becke-Johnson exchange potential. Prior to level calculations, we ensured that an agreement between the formation energies from small (95–97 atoms) and large (323–325 atoms) supercells was achieved after applying the Makov-Payne correction method. Our calculated transition level for the anion vacancy was 2.97 eV below the conduction band, agreeing with the experimental optical absorption band at 3.3 eV associated with the electron transition from the ground state F-center to the conduction band in CaF₂.     

Processing and characterization of ultra-thin yttria-stabilized zirconia (YSZ) electrolytic films for SOFC

Sub-micron yttria-stabilized zirconia (YSZ) electrolyte layer was prepared by a liquid state deposition method and with an average thickness of 0.5 μm to improve the performance of the anode-supported solid oxide fuel cell (SOFC). The YSZ precursors, containing yttrium and zirconium species and an additive, poly-vinyl-pyrrolidone (PVP), were spin-coated on a Ni/YSZ anode substrate. Several properties, including crystalline phases, microstructures, and current–voltage (I–V) characteristics, were investigated. The thin film of 4 mol% Y₂O₃-doped ZrO₂ (4YSZ) consisted of cubic, tetragonal, and a trace of monoclinic phases, and showed a crack-free layer after sintering at 1300 °C. The anode supported SOFC, which consists of the Ni–YSZ anode, 4YSZ electrolyte, and Pt/Pd cathode, showed power densities of 477 mW/cm² at 600 °C, and 684 mW/cm² at 800 °C. Otherwise, the surface cracks of the other YSZ-coated samples (e.g. 8YSZ) can be repaired by a multi-coating method.     

Vacancy defects in delafossite СuАlO<Subscript>2</Subscript>: First-principles calculations

Electronic properties and formation energies of vacancy defects in delafossite CuAlO₂ have been investigated by using the first-principles density functional theory. The band structures and density of states of various vacancy defects have been obtained and analyzed. The results show that the V _Cu systems with different charge states influence the type of conductivity. The introduced vacancy defects enhance the hybridization between O-2p and Cu-3d states, which is good for p-type conductivity. The calculated formation energies indicate that the Cu vacancy is relatively easy to form and it trends to have positive charge.     

Sol-gel method and luminescence properties of the ZrO<Subscript>2</Subscript>:Eu<Superscript>3+</Superscript> phosphors with different charge compensation

Eu³⁺-doped ZrO₂ phosphors with different charge compensators (Li⁺, Na⁺, K⁺) were prepared by the sol-gel method. The properties of the as-obtained samples are characterized by X-ray diffraction, scanning electron microscope, photoluminescence spectra, and decay curve. The results show that ZrO₂:Eu³⁺ phosphors with different charge compensation are mixed phase of tetragonal and monoclinic phase, and the volume fraction of tetragonal phase of ZrO₂:Eu³⁺/Na⁺ phosphor is bigger than the other phosphors. The phosphors can emit strong red light at 606~616 nm (⁵D₀ → ⁷F₂) excited by ultraviolet light (395 nm). Compared with two charge compensation patterns in the ZrO₂:Eu³⁺, it has been found that ZrO₂:Eu³⁺ phosphors used Na⁺ as charge compensator show greatly enhanced red emission under 395 nm excitation and longer luminescence lifetime.     

Local structure and the electron paramagnetic resonance parameters for the Cr3+ ions at K+-vacancy site in Cr3+:KZnF3 laser crystal

The quantitative relationship between the electron paramagnetic resonance (EPR) parameters D,g_∥,g_⊥ and the local structure parameters of Cr³⁺ ion in KZnF₃ crystals is established. The local structure for Cr³⁺ paramagnetic center in KZnF₃:Cr³⁺ crystal has been determined from EPR parameters of Cr³⁺ ion. This work shows that the trigonal crystal field of Cr³⁺ ion in KZnF₃ crystals comes from following two origins: (1) the nearest-neighbor K⁺ vacancy caused by the charge compensation in the [1 1 1]-axis direction; and (2) the lattice distortions of the nearest-neighbor fluorine coordination caused by the K⁺ vacancy and the differences in mass, charge, and radius between Cr³⁺ ion and Zn²⁺ ion. The unified calculation of the EPR zero-field splitting and g factors, taking into account the K⁺ vacancy and the lattice distortions, has been carried out on the basis of the complete diagonalization procedure and the superposition crystal-field model, all calculation results are in excellent agreement with the experimental data. Although the main source of the trigonal crystal field comes from the K⁺ vacancy caused by the charge compensation, the contribution of the lattice distortion cannot be neglected.