双波长Yb∶YAG连续激光理论及实验研究

报道了Yb∶YAG双波长激光振荡阈值的理论结果,实验获得了连续双波长激光输出.实验中,采用紧凑的平凹腔结构、940nm光纤耦合LD端面泵浦方式,Yb∶YAG晶体作为激光晶体,采用10%、15%和20%的输出耦合镜,分别实现了单波长和双波长激光输出,在最高泵浦功率为20 W时,输出耦合率分别为10%、20%,最高获得3.94W的1 050nm激光和3.40 W的1 030nm激光,对应的光光转换效率分别为19.7%和17.0%;当输出耦合率为15%、泵浦功率为11.7 W时,获得0.79 W的双波长激光,对应的光光转换效率为6.8%,功率比为1∶1.3,通过光栅光谱仪测量得到双波长谱线中心分别为1 030.31nm和1 047.50nm;当1 030nm激光功率为3.0 W时,30min内输出功率RMS稳定性优于0.18%.该实验结果与理论分析相吻合,可应用于设计稳定可靠的掺Yb双波长激光器.     

303MHz高重复频率掺Er光纤飞秒激光器

高重复频率掺Er光纤飞秒激光器在光学频率梳、超高速光学采样等领域具有很重要的作用. 本文采用非线性偏振旋转锁模机理, 在掺Er光纤飞秒激光器中实现了重复频率为303 MHz的锁模脉冲输出. 通过优化腔内色散, 激光器腔内色散在零色散附近偏负值, 锁模后工作在展宽脉冲锁模状态. 在817 mW抽运功率下, 激光器在连续光状态下可以输出125 mW的平均功率, 在锁模状态下可以输出69 mW的平均功率, 脉冲宽度为90 fs. 当抽运功率处于700-817 mW时, 激光器可以实现自启动锁模. 激光器重复频率在5 h内的漂移量为30 Hz.     

InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.     

Continuous-wave and Q-switched performance of an Yb:YAG/YAG composite thin disk ceramic laser pumped with 970-nm laser diode

Using front face-pumped compact active mirror laser （CAMIL） structure, we have demonstrated an Yb：YAG/YAG composite ceramic disk laser with pumping wavelength at 970 nm. The laser has been operated in both continuous-wave （CW） and Q-switching modes. Under CW operation, laser output power of 1.05 W with 2% transmission output coupler was achieved at the wavelength of 1031 nm. Q- switched laser output was gotten by using an acousto-optic Q-switch. The repetition rate ranged from 1 to 30 kHz and the pulse width varied from 166 to 700 ns.     

Internal resonantly enhanced frequency doubling of continuous-wave fiber lasers

In this Letter we describe a simple method for frequency doubling in high-power CW fiber lasers that offers the prospect of very high conversion efficiency and high power in the visible wavelength regime. Our approach is based on second harmonic generation in an enhancement resonator within the fiber laser cavity and does not require active cavity length stabilization. This technique has been applied to a cladding-pumped Yb-doped fiber laser to generate 19 W of linearly polarized CW green output at 540 nm, with excellent temporal stability for 90 W of absorbed diode pump power at 975 nm. The prospects for further improvement in performance with respect to conversion efficiency and output power are considered.     

Distributed-feedback fiber laser with optical amplifier

A single-frequency all-fiber laser source operating at 1093 nm with an output power of more than 1 W is developed. A master oscillator-power amplifier configuration that comprises a distributed-feedback fiber laser and an ytterbium-doped fiber amplifier is implemented. Some aspects of the stimulated Brillouin scattering specific to active fiber are discussed.     

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.     

Characteristics of a Cataphoresis He-Ca+ Recombination Laser

A cataphoretic input of calcium vapour into the active volume of pulsed He-Ca^＋ laser is designed and made. The recombination laser at 373.3 nm and the R-M transition laser at 854.6 nm are achieved experimentally with modified Blumlein circuit by high-frequency longitudinal pulsed discharge. The dependences of work parameters such as the pulse frequency, the power supply voltage and the helium pressure on laser output characteristics at 373.3nm line are measured and discussed. The maximum laser output power of 136mW and the specific power of 5.9 m W/cm^3 are obtained, respectively.     

Properties of continuous-wave 1123 nm laser with diode-side-pumped Nd:YAG

Laser properties of diode-side-pumped Nd:YAG laser operating at 1123 nm are demonstrated. A 1.0 at % Nd-doped Nd:YAG rod with a size of Ø3 × 63 mm² is used as the active medium. Both radial and tangential thermal focal lengths of this side-pumped Nd:YAG rod are determined under lasing condition. The results show that the bifocusing strength of 1123 nm laser is larger than that of 1164 nm laser, and 1123-nm thermal focal lengths are shorter than those of 1064-nm laser due to higher quantum defect. Laser output performances of 1123 nm in terms of stability, output power and beam quality influenced by pump power at different cavity lengths are also discussed with a convex-piano cavity.     

Characterization of an Intra-Cavity Pumped P2O5-Doped Silica Raman Fiber Laser

We examine the characteristics of a P₂O₅-doped Raman fiber laser pumped by a double-clad ytterbium-doped fiber laser in an intra-cavity configuration. The double-clad fiber laser consists of two high reflection fiber Bragg gratings at 1092 nm, with an active length of 17 m, where the output grating is located at the end of the 400m P₂O₅-doped fiber. The Raman cavity is formed by a 1278-nm-high reflection fiber Bragg grating spliced to the double-clad fiber, and a 50% output coupler. The maximum conversion efficiency at 1278 nm with respect to the input pump power at 915 nm was 26.9%.     

Compact,temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained In Ga As symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power are obtained with 1.4 W of 808-nm incident pump power. The temperature stability of the laser is demonstrated to have an ideal shift rate of 0.035 nm/K of the lasing wavelength.     

Implementation of a diode-pumped Nd:YAG laser with quick-change output couplers for high-beam quality 1064 or 532 nm wavelength generation

A novel diode-pumped Nd:YAG laser system that employs a fixed active laser medium and a pair of quick-change output couplers on a precision linear stage for 1064 or 532 nm wavelength generation is presented. Fixed elements include a rear mirror, an acousto-optical Q-switch, and a diode-pumped solid-state laser (DPSSL). Movable elements for 1064 nm generation include an intra-cavity aperture as a mode selection element (MSE) and an output coupler. Movable elements for 532 nm generation include an intra-cavity frequency conversion with KTP, an intra-cavity aperture as a mode selection element (MSE), and an output coupler. Under stable operating conditions, the 1064 nm configuration produced a beam propagation ratio of 1.18 whereas the 532 nm configuration produced a beam propagation ratio of 1.1, both of which used an intra-cavity MSE with an aperture of 1.2 mm and a length of 5 mm.     

Laser diode-array pumped Nd:YAlO_3 CW laser at 1079.5nm and 1341.4nm

Two key problems,spectral matching and spatial overlap between pumpingbeam and the laser mode in the active material,of diode-laser-arrays(LD)end-pumped solid-state laser have been discussed.Initial experimental results were given for LD end-pumpedTEM_(00) CW Nd:YAlO_3 laser at the wavelength of 1079.5nm and 1341.4nm.The outputpower at 1079.5nm is 24.4mW with 14.5％ slope efficiency,and the output power is 1.2mW at 1341.4nm.     

The influence of doping on the laser performance

We report a comparison, at low inversion population density, between two Yb:YAG ceramics lasers with different doping levels (10 and 20 at %) emitting at 1030 and 1050 nm. At the shorter lasing wavelength, the efficiency and the maximum output power of both samples are almost independent on the concentration of dopants. Conversely, at 1050 nm the two samples show a sizeable difference in the performances for higher values of the pump power. The results are compared with numerical simulations accounting for the pump beam and the laser radiation in order to map the temperature distribution experienced by the samples. We studied the effects of the reinjection of the pump inside the active medium. We obtained an output power of 10 W with a slope efficiency of 59% in respect of the pump power on the 20 at % sample. Finally, we report the tuning range for the heavier-doped sample (20 at %), which, to the best of our knowledge, is the first measurement on an heavily doped sample even reported in literature.     

Energy transfer in slab dye lasers

A simple model of the energy transfer between a booster dye and the active dye in a flashlamp pumped planar waveguide dye laser is described.Analytical results are compared with experiments for several dyes in the 600–650 nm region.A twofold increase of laser output was found at a wavelength (630 nm) which is of particular interest for several applications.     

高功率宽调谐范围掺Yb3+光子晶体光纤激光器

采用闪耀光栅作为色散元件,构建了前向、后向输出两种结构的可调谐掺Yb3 光子晶体光纤激光器,并对其输出特性进行了分析研究.在抽运功率5.75W时,前向输出结构实现了1050.6～1110.2 nm的连续调谐输出,光谱线宽约0.1 nm,边模抑制比大于44 dB.在调谐激光波长为1085 nm时,得到最高输出功率677 mW.结构改进的后向输出结构的可调谐输出结构在抽运功率4.43 W,调谐波长1075 nm,实现了2.21 W的功率输出,斜率效率为73%;调谐范围50.9 nm(1042.1～1093 nm),光谱线宽小于0.08 nm,边模抑制比大于50 dB.两种结构的可调谐激光器输出均为线偏振光,偏振度大于89.5%.     

Nd:YAG陶瓷与单晶4F3/2–4I13/2跃迁的弱谱线多波长激光性能对比

报道了基于半导体激光端面抽运Nd:YAG的⁴F_3/2–⁴I_13/2 跃迁的弱谱线多波长激光输出. 实验对比了透明陶瓷与单晶材料的激光输出特性, 表明透明陶瓷和单晶材料荧光谱强度的略微差异, 导致了多波长输出时相同两个波长之间的激光强度比在两种材料中的差异. 基于两种耦合输出镜片, 激光阈值都在2 W左右. 在13.5 W的抽运功率下, 基于Nd:YAG透明陶瓷获得了输出功率4.05 W、强度比1 :2的1338与1356 nm双波长激光和输出功率3.65 W、强度比13 : 1的1356与1414 nm 双波长激光, 斜率效率分别达33.9% 和31.9%.     

自锁模Cr：LiSAF激光器的实验研究

以功率为９００ｍＷ，波长为４８８ｎｍ的单线氩离子激光作为泵浦源，在腔内不加任何主动调制器和可饱和吸收体的情况下实现了Ｃｒ：ＬｉＳＡＦ激光器的飞秒级自锁模运转，得到了脉冲宽度为４０ｆｓ，重复频率为１００ＭＨｚ，平均输出功率为４５ｍＷ的稳定的锁模脉冲序列。     

Femtosecond self mode locking of Yb:fluoride phosphate glass laser

Passive cw mode locking of an ytterbium-doped fluoride phosphate glass laser is demonstrated, for what we believe to be the first time, based solely on the Kerr effect in the active medium in a resonator with dispersion compensation. Nearly bandwidth-limited pulses as short as 160fs are generated at ~1040 nm. We obtain average output powers as high as 250mW at 170-MHz repetition rate with absorbed pump power as low as 1.2W.     

Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling

This work reports single-frequency laser oscillation at λ=1003.4 nm of a diode-pumped vertical external cavity surface-emitting semiconductor laser for metrological applications. A low thermal resistance of the semiconductor active component is achieved by solid-liquid interdiffusion bonding onto a SiC substrate. The spectro-temporal dynamics of the laser is theoretically studied. Experimentally, an output power of 1.7 W is demonstrated in free running operation, and up to 500 mW in a true single longitudinal mode. Furthermore, single-frequency laser emission at λ=501.7 nm is obtained by intracavity frequency doubling, resulting in a total output power as high as 62 mW. PACS 42.55.Px; 42.55.Xi; 42.62.Eh; 42.65.Ky