The morphological,optical and electrical properties of SnO2:F thin films prepared by spray pyrolysis

Combining the spray pyrolysis and the sol–gel techniques gives the possibility to produce Fluorine doped Tin oxide (SnO₂:F) thin films. Transparent conducting SnO₂:F thin films have been deposited on glass substrates by the spray pyrolysis technique. This technique for the fabrication of SnO₂:F filmsby combining sol–gel process and the spray pyrolysis technique ispresented in this paper. The Sol–gel precursors have been successfully prepared using SnCl₂·5H₂O and (Ac)F₃. The structural, electrical, and optical properties of these films were investigated. The high resolution transmission electron microscopy (HRTEM) and selected area diffraction (SAD) patterns of SnO₂:F films show that the gel films lead to a tetragonal structure. The X‐ray diffraction pattern of the films deposited at substrate temperature 530° , the orientation of the films was predominantly [110]. In addition, the surface chemical components were also examined by X‐ray photoelectron spectroscopy (XPS) showing the SnO₂:F deposited with the atomic concentration ratios Sn/F 1.82:1. The minimum sheet resistance was 50 Ω and average transmission in the visible wavelength range of 300 to 800 nm was 87.25%. Copyright © 2008 John Wiley & Sons, Ltd.     

Oriented and low‐density tin dioxide film by sol–gel mineralizing tin‐contained hydroxypropyl cellulose lyotropic liquid crystal for laser‐induced extreme ultraviolet emission

A series of tin‐doped hydroxypropyl cellulose (HPC) lyotropic liquid crystal (LC) was synthesized using a simple process and their properties were characterized using selective reflection, wide‐angle X‐ray diffraction (WAXD), and the band texture observed under polarized optical microscope. The present preparation is applicable for mass production using large substrate with low cost HPC. A cholesteric lyotropic LC phase was observed for the hybrid solution with higher than 40 wt % HPC. After sol–gel condensation, the HPC‐Sn hybrid LC films were calcined at 400 °C and the as‐prepared product was determined to obtain tin dioxide (SnO₂) which was characterized using WAXD. The iridescent color and ～2 nm structure seen after the condensation disappeared in the as‐prepared SnO₂. Scanning electronic microscope images of the SnO₂ showed that the HPC content in the HPC‐Sn hybrid played an important role in controlling the SnO₂ morphology. A spectrum of relatively monochromatic extreme ultraviolet (13.5 nm) emission was measured in the as‐prepared SnO₂ in comparison with bulk tin and inverse opal SnO₂. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 4566–4576, 2009     

SnOx thin films with tunable conductivity for fabrication of p–n homo‐junction

Tin oxide (SnO_x) has been widely used for the fabrication of transparent and flexible devices because of its excellent optical and electronic properties. In this work, we established a methodology for the synthesis of SnO_x thin films with p‐type and n‐type tunable conductivity by direct currecnt (DC) magnetron sputtering. The SnO_x thin films changed from p‐type to n‐type by increasing the relative oxygen partial pressure (ppO₂) from 4.8% to 18.5% and by varying the working pressure between 1.8 and 2.5 mTorr. The SnO_x thin films were annealed at 160°C, 180°C, and 200°C for 30 min to promote the formation of the desired crystalline structures. At the annealing temperature of 180°C in air ambient, the SnO_x thin films showed a tetragonal structure with Sn traces. Having found the optimal conditions, we deposited both types of SnO_x thin films with the same tetragonal structure and similar chemical stoichiometry. Also, the conditions to obtain thin films with the highest mobility values for p‐type (1.10 cm²/Vs) and n‐type (22.20 cm²/Vs) were used for fabricating the device. Finally, the implementation of a SnO_x‐based p–n diode was demonstrated using transparent SnO_x thin films developed in this work, illustrating their potential use in transparent electronics.     

Characterization of Tin(IV) Oxide Thin Films Prepared by Atmospheric Pressure Chemical Vapor Deposition of cis‐[SnCl4{OC(H)OC2H5}2]

A new single‐source precursor, [SnCl₄{OC(H)OC₂H₅}₂], prepared by treating tin tetrachloride with ethyl formate (1:2 ratio) was developed for the deposition of tin oxide thin films on glass substrates. The compound [SnCl₄{OC(H)OC₂H₅}₂] is highly volatile and provides very high growth rates (up to 100Å s^?1 at 560 °C) in an atmospheric pressure chemical vapor deposition (APCVD) reactor. More significantly, the compound does not decompose to tin oxide below 320 °C, thereby minimizing the formation of particles in the vapor above the growing tin oxide film. To prepare highly conducting fluorine doped tin oxide (SnO₂:F) films 2,2,2‐trifluoroethyl trifluoroacetate was used as the source of fluoride. High quality SnO₂:F films were deposited at 560 °C with a flow rate of 2 mL fluoride reagent hr^?1; typical film properties are resistivity of 5.9 X 10^?4 Ω cm, Hall mobility of 27.3 cm² V^?1 s^?1, carrier concentration of 3.9 X 10²⁰ cm^?3 and percent transmission ranging from 86 to 88 %. The best films of SnO₂:F possess transparencies as high as 90 % (750 nm), sheet resistances as low as 7 Ω sq^?1 and Haacke's figure of merit as high as 29 X 10^?3 (750 nm). The newly developed APCVD reactor and the chemistry were optimized with respect to structural, electrical and optical properties of the films by adjusting the substrate temperature, gas flow rates and the amount of fluoride present in the vapor stream. Growth rates with respect to deposition time, substrate temperature and flow rates of precursors were found to be similar for both undoped (SnO₂) and doped (SnO₂:F) samples. The SnO₂:F films possess larger grains than the SnO₂ which may account for the lower resistivity and the higher mobility in the SnO₂:F samples.     

SnO<Subscript>2</Subscript> thin films from an aqueous citrato peroxo Sn(IV) precursor

In this work, tin(II) oxalate was studied as a novel chloride-free starting material for the preparation of a stable Sn-containing precursor solution. This precursor was applied for the chemical solution deposition (CSD) of transparent conducting coatings of SnO₂ on Si/SiO₂ substrates. An influence of synthesis parameters, such as pH, complexing agent to metal ion ratio on the stability of the citrato peroxo Sn(IV) precursor has been investigated in this study. Insights into the precursor chemistry and its thermal decomposition based on TG-DSC analysis are also presented. The obtained SnO₂ films were characterized by high temperature X-ray diffraction (HT-XRD) and scanning electron microscopy (SEM) to evaluate phase purity and film thickness, respectively.     

Atmospheric pressure deposition of fluorine‐doped SnO2 thin films from organotin fluorocarboxylate precursors

Nine organotin fluorocarboxylates R_nSnO₂CR_f (n = 3, R = Bu, R_f = CF₃, C₂F₅, C₃F₇, C₇F₁₅; R = Et, R_f = CF₃, C₂F₅; R = Me, R_f = C₂F₅; n = 2, R = Me, R_f = CF₃) have been synthesized; key examples have been used to deposit fluorine‐doped SnO₂ thin films by atmospheric pressure chemical vapour deposition. Et₃SnO₂CC₂F₅, in particular, gives high‐quality films with fast deposition rates despite adopting a polymeric, carboxylate‐bridged structure in the solid state, as determined by X‐ray crystallography. Gas‐phase electron diffraction on the model compound Me₃SnO₂CC₂F₅ shows that accessible conformations do not allow contact between tin and fluorine, and that direct transfer is therefore unlikely to be part of the mechanism for fluorine incorporation in SnO₂ films. The structure of Me₂Sn(O₂CCF₃)₂(H₂O) has also been determined and adopts a trans‐Me₂SnO₃ coordination sphere about tin in which each carboxylate group is monodentate. Copyright © 2005 John Wiley & Sons, Ltd.     

Thermal and structural investigation of SnO<Subscript>2</Subscript>/Sb<Subscript>2</Subscript>O<Subscript>3</Subscript> obtained by the polymeric precursor method

SnO₂-based materials are used as sensors, catalysts and in electro–optical devices. This work aims to synthesize and characterize the SnO₂/Sb₂O₃-based inorganic pigments, obtained by the polymeric precursor method, also known as Pechini method (based on the metallic citrate polymerization by means of ethylene glycol). The precursors were characterized by thermogravimetry (TG) and differential thermal analysis (DTA). After characterization, the precursors were heat-treated at different temperatures and characterized by X-ray diffraction. According to the TG/DTA curves basically two-step mass loss process was observed: the first one is related to the dehydration of the system; and the second one is representative to the combustion of the organic matter. Increase of the heat treatment temperature from 500 to 600°C and 700°C resulted higher crystallinity of the formed product.     

Fine pattern fabrication on SnO2:Sb thin films formed by the sol–gel process

The effects of UV irradiation on the properties of Sb⁵⁺ doped gel films were studied, which were prepared from stannic chloride (SnCl₄·5H₂O) and sodium alkoxide (NaOR) modified with benzytone (BzAcH). It was found that the absorption peak at around 335 nm due to the π → π* transition showed the formation of a chelate ring to Sn. The intensity of the absorption band decreased with UV light irradiation at 365 nm from a high‐pressure mercury lamp (250W). This finding showed that the SnO₂:Sb gel films modified with BzAcH were photosensitive to UV light. Additionally, this finding was applied to the fabrication of patterns on the SnO₂:Sb thin films. A gel film was irradiated through a mask and leached in water. Then a positive pattern was formed on the SnO₂:Sb thin films attached to the substrate. After heat treatment, the SnO₂:Sb gel films changed into transparent conductive films with an average conductivity of 1.20 × 10^?2Ω cm and with a transmission of 97.1%. Copyright © 2006 John Wiley & Sons, Ltd.     

Polymer‐Templated Formation of Polydopamine‐Coated SnO2 Nanocrystals: Anodes for Cyclable Lithium‐Ion Batteries

Well‐controlled nanostructures and a high fraction of Sn/Li₂O interface are critical to enhance the coulombic efficiency and cyclic performance of SnO₂‐based electrodes for lithium‐ion batteries (LIBs). Polydopamine (PDA)‐coated SnO₂ nanocrystals, composed of hundreds of PDA‐coated “corn‐like” SnO₂ nanoparticles (diameter ca. 5 nm) decorated along a “cob”, addressed the irreversibility issue of SnO₂‐based electrodes. The PDA‐coated SnO₂ were crafted by capitalizing on rationally designed bottlebrush‐like hydroxypropyl cellulose‐graft‐poly (acrylic acid) (HPC‐g ‐PAA) as a template and was coated with PDA to construct a passivating solid‐electrolyte interphase (SEI) layer. In combination, the corn‐like nanostructure and the protective PDA coating contributed to a PDA‐coated SnO₂ electrode with excellent rate capability, superior long‐term stability over 300 cycles, and high Sn→SnO₂ reversibility.     

Intramolecular interactions in μ‐oxido‐bis{bis[2‐(dimethylaminomethyl)phenyl]stannol}

The title compound, [Sn₂(C₉H₁₂N)₄O(OH)₂], consists of two [2‐(Me₂NCH₂)C₆H₄]₂SnOH units bridged by an O atom located on a twofold rotation axis. The unique Sn atom is six‐coordinated with a (C,N)₂SnO₂ octahedral core, as a result of the strong intramolecular N→Sn dative coordination trans to the Sn—O bonds [N—Sn—O = 170.24 (12) and 167.83 (10)°]. Owing to the presence of intermolecular H...phenyl contacts, the molecules are arranged in a ladder‐like structure.     

Synthesis,spectroscopic characterization,and biological activity studies of organotin(IV) derivatives of (E)‐3‐(3‐fluorophenyl)‐2‐phenyl‐2‐propenoic acid. Crystal and molecular structure of Et2Sn[OCOC(C6H5)CH(3‐FC6H4)]

The complexes Me₂SnL₂ ( I ), Me₃SnL ( II ), Et₂SnL₂ ( III ), n‐Bu₂SnL₂ ( IV ), n‐Bu₃SnL ( V ), n‐Oct₂SnL₂ ( VI ), Bz₂SnL₂ ( VII ), and Ph₃SnL ( VIII ), where “L” is ( E )‐3‐(3‐fluorophenyl)‐2‐phenyl‐2‐propenoate, have been prepared and structurally characterized by means of elemental analysis, infrared, mass, and multinuclear (¹H, ¹³C, ¹¹⁹Sn) NMR spectral techniques. The spectroscopic results showed that the geometry around the Sn atom in triorganotin(IV) derivatives is four‐coordinated in noncoordinating solvent and behaves as five‐coordinated linear polymers with bridging carboxylate groups or five‐coordinated monomers, both acquiring trans‐R₃SnO₂ geometry for Sn in the solid state. While all the diorganotin(IV) derivatives may acquire trigonal bipyramidal structures in solution due to collapse of the Sn←OCO interaction and octahedral geometries in the solid state, which have been confirmed by the X‐ray crystallographic data of the compound III . The crystal structure of Et₂SnL₂ ( III ) has been determined by X‐ray crystallography and is found skew‐trapezoidal bipyramidal, which substantiates that the ligand acts as an anisobidentate chelating agent, thus rendering the Sn atom six coordinated. The crystal is monoclinic with space group C2₁/n. All the investigated compounds have also been screened for biocidal and cytotoxicity data. © 2006 Wiley Periodicals, Inc. Heteroatom Chem 17:420–432, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/hc.20243     

SnO2 “Russian Doll” Octahedra Prepared by Metalorganic Synthesis: A New Structure for Sub‐ppm CO Detection

Micrometer‐sized hierarchical Sn₃O₂(OH)₂ octahedra, which are self‐assembled one inside the other, resembling “Russian doll” organization, have been obtained by a metalorganic approach. This synthesis is based on the controlled hydrolysis of [Sn(NMe₂)₂]₂ in the presence of an alkylamine ligand in an organic solvent (THF). The water content of the medium proved to be a key parameter for the formation of these multi‐walled octahedra. The resultant structures have been used as gas‐sensitive layers on micromachined silicon devices. During in situ heating, Sn₃O₂(OH)₂ is oxidized to SnO₂ while retaining the initial morphology. The sensors present outstanding dynamic responses at very low CO concentrations (7 % and 67 % resistance variation to 0.25 and 20 ppm CO, respectively, at an operating temperature of 500 °C). This superior gas‐sensing performance is closely related to the unique microstructure of the SnO₂ multi‐walled octahedra.     

Atmospheric pressure chemical vapour deposition of fluorine‐doped tin(IV) oxide from fluoroalkyltin precursors

Perfluoroalkytin compounds R_(4−n)Sn(R_f)_n (R = Me, Et, Bu, R_f = C₄F₉, n = 1; R = Bu, R_f = C₄F₉, n = 2, 3; R = Bu, R_f = C₆F₁₃, n = 1) have been synthesized, characterized by ¹H, ¹³C, ¹⁹F and ¹¹⁹Sn NMR, and evaluated as precursors for the atmospheric pressure chemical vapour deposition of fluorine‐doped SnO₂ thin films. All precursors were sufficiently volatile in the range 84–136 °C and glass substrate temperatures of ca 550 °C to yield high‐quality films with ca 0.79–2.02% fluorine incorporation, save for Bu₃SnC₆F₁₃, which incorporated <0.05% fluorine. Films were characterized by X‐ray diffraction, scanning electron microscopy, thickness, haze, emissivity, and sheet resistance. The fastest growth rates and highest quality films were obtained from Et₃SnC₄F₉. An electron diffraction study of Me₃SnC₄F₉ revealed four conformations, of which only the two of lowest abundance showed close F Sn contacts that could plausibly be associated with halogen transfer to tin, and in each case it was fluorine attached to either the γ‐ or δ‐carbon atoms of the R_f chain. Copyright © 2005 John Wiley & Sons, Ltd.     

Synthesis and characterization of di‐n‐butyltin(IV) complexes with 4′/2′‐nitrobiphenyl‐2‐carboxylic acids: X‐ray crystal structures of [{(n‐C4H9)2Sn(OCOC12H8NO2−4′)}2O]2 and (n‐C4H9)2Sn{OCOC12H8NO2−4′}2

Reactions of di‐n‐butyltin(IV) oxide with 4′/2′‐nitrobiphenyl‐2‐carboxylic acids in 1 : 1 and 1 : 2 stoichiometry yield complexes [{(n‐C₄H₉)₂Sn(OCOC₁₂H₈NO₂?4′/2′)}₂O]₂ ( 1 and 2 ) and (n‐C₄H₉)₂Sn(OCOC₁₂H₈NO₂?4′/2′)₂ ( 3 and 4 ) respectively. These compounds were characterized by elemental analysis, IR and NMR (¹H, ¹³C and ¹¹⁹Sn) spectroscopy. The IR spectra of these compounds indicate the presence of anisobidentate carboxylate groups and non‐linear C? Sn? C bonds. From the chemical shifts δ (¹¹⁹Sn) and the coupling constants ¹J(¹³C, ¹¹⁹Sn), the coordination number of the tin atom and the geometry of its coordination sphere have been suggested. [{(n‐C₄H₉)₂Sn(OCOC₁₂H₈NO₂?4′)}₂O]₂ ( 1 ) exhibits a dimeric structure containing distannoxane units with two types of tin atom with essentially identical geometry. To a first approximation, the tin atoms appear to be pentacoordinated with distorted trigonal bipyramidal geometry. However, each type of tin atom is further subjected to a sixth weaker interaction and may be described as having a capped trigonal bipyramidal structure. The diffraction study of the complex (n‐C₄H₉)₂Sn(OCOC₁₂H₈NO₂?4′)₂ ( 3 ) shows a six–coordinate tin in a distorted octahedral frame containing bidentate asymmetric chelating carboxylate groups, with the n‐Bu groups trans to each other. The n‐Bu? Sn? n‐Bu angle is 152.8° and the Sn? O distances are 2.108(4) and 2.493(5) Å. The oxygen atom of the nitro group of the ligand does not participate in bonding to the tin atom in 1 and 3 . Crystals of 1 are triclinic with space group P1 and of that of 3 have orthorhombic space group Pnna. Copyright © 2003 John Wiley & Sons, Ltd.     

Dihalodimethyltin(IV) complexes of 2‐(pyrazol‐1‐ylmethyl)pyridine

Reaction of dichloro‐ and dibromodimethyltin(IV) with 2‐(pyrazol‐1‐ylmethyl)pyridine (PMP) afforded [SnMe₂Cl₂(PMP)] and [SnMe₂Br₂(PMP)] respectively. The new complexes were characterized by elemental analysis and mass spectrometry and by IR, Raman and NMR (¹H, ¹³C) spectroscopies. Structural studies by X‐ray diffraction techniques show that the compounds consist of discrete units with the tin atom octahedrally coordinated to the carbon atoms of the two methyl groups in a trans disposition (Sn? C = 2.097(5), 2.120(5) Å and 2.110(6), 2.121(6) Å in the chloro and in the bromo compounds respectively), two cis halogen atoms (Sn? Cl = 2.4908(16), 2.5447(17) Å; Sn? Br = 2.6875(11), 2.7464(9) Å) and the two donor atoms of the ligand (Sn? N = 2.407(4), 2.471(4) Å and 2.360(5), 2.455(5) Å). In both cases, the Sn? N(pyridine) bond length is markedly longer than the Sn? N(pyrazole) distance. Copyright © 2003 John Wiley & Sons, Ltd.     

Reduced SnO2 Porous Nanowires with a High Density of Grain Boundaries as Catalysts for Efficient Electrochemical CO2‐into‐HCOOH Conversion

Electrochemical conversion of CO₂ into energy‐dense liquids, such as formic acid, is desirable as a hydrogen carrier and a chemical feedstock. SnO_x is one of the few catalysts that reduce CO₂ into formic acid with high selectivity but at high overpotential and low current density. We show that an electrochemically reduced SnO₂ porous nanowire catalyst (Sn‐pNWs) with a high density of grain boundaries (GBs) exhibits an energy conversion efficiency of CO₂‐into‐HCOOH higher than analogous catalysts. HCOOH formation begins at lower overpotential (350 mV) and reaches a steady Faradaic efficiency of ca. 80 % at only −0.8 V vs. RHE. A comparison with commercial SnO₂ nanoparticles confirms that the improved CO₂ reduction performance of Sn‐pNWs is due to the density of GBs within the porous structure, which introduce new catalytically active sites. Produced with a scalable plasma synthesis technology, the catalysts have potential for application in the CO₂ conversion industry.     

Multiphoton-Induced Decomposition of Organometallics as a Route for Production of Doped SnO2 Films

A laser-assisted chemical vapor deposition scheme for SnO₂ films has been developed, based on the UV multiphoton dissociation of di (n-butyl) tin diacetate. Doped films were produced by simultaneous photolysis of other inorganic precursors. Films were characterized by UV–visible spectroscopy, room-temperature resistance measurements in the presence of a variety of gas-phase contaminants, and the temperature dependence of film resistance. These preliminary investigations demonstrate the ability to vary detection sensitivity and selectivity by changing the dopant precursor identity. © 1997 by John Wiley & Sons, Ltd.     

Solid‐state 119Sn NMR and antitumor activity of bis [1,3‐bis (3‐oxapentamethylenecarbamoylthioacetato)‐1,1,3,3‐tetrabutyl‐1,3‐distannoxare], and the crystal structure of its bis‐ethanol solvate

The ¹¹⁹Sn cross polarization‐magic angle spinning NMR spectrum of bis[1,3‐bis(3‐oxapentamethylenecarbamoylthioacetato)‐1,1,3,3‐tetrabutyl‐1,3‐distannoxane], {[(C₄H₉)₂SnO₂CCH₂SC(O)N(CH₂CH₂)₂O]₂O}₂, which consists of two resonances of similar chemical shifts and symmetry (δ_iso = −152, −202 ppm; asymmetry, κ = 0.38), implies the existence of two five‐coordinate tin sites in the centrosymmetric dimer. The assignment has been corroborated by X‐ray diffraction analysis on the compound that has been crystallized from ethanol; the crystal structure shows two tin atoms in cis‐C₂SnO₃ trigonal‐bipyramidal coordination [C‐Sn‐C = 131.5(1), 131.3(2) °]. The analysis also reveals the presence of two lattice ethanol molecules that are hydrogen‐bonded to the dimer [OO = 2.779(5) Å]. When exposed to air, the distannoxane loses ethanol. The unsolvated distannoxane is more active than cis‐platin when screened against MCF‐7 (mammary cancer), EVSA‐T (mammary cancer), WiDr (colon cancer), IGROV (ovarian cancer), M19 MEL (melanoma), A498 (renal cancer) and H226 (lung cancer) cell lines. Copyright © 2000 John Wiley & Sons, Ltd.     

Robust SnO2−x Nanoparticle‐Impregnated Carbon Nanofibers with Outstanding Electrochemical Performance for Advanced Sodium‐Ion Batteries

The sluggish sodium reaction kinetics, unstable Sn/Na₂O interface, and large volume expansion are major obstacles that impede practical applications of SnO₂‐based electrodes for sodium‐ion batteries (SIBs). Herein, we report the crafting of homogeneously confined oxygen‐vacancy‐containing SnO_2?x nanoparticles with well‐defined void space in porous carbon nanofibers (denoted SnO_2?x/C composites) that address the issues noted above for advanced SIBs. Notably, SnO_2?x/C composites can be readily exploited as the working electrode, without need for binders and conductive additives. In contrast to past work, SnO_2?x/C composites‐based SIBs show remarkable electrochemical performance, offering high reversible capacity, ultralong cyclic stability, and excellent rate capability. A discharge capacity of 565 mAh g^?1 at 1 A g^?1 is retained after 2000 cycles.     

Synthesis and Structural Characterization of β‐Ketoiminate‐Stabilized Gallium Hydrides for Chemical Vapor Deposition Applications

Bis‐β‐ketoimine ligands of the form [(CH₂)_n{N(H)C(Me)?CHC(Me)?O}₂] (LⁿH₂, n=2, 3 and 4) were employed in the formation of a range of gallium complexes [Ga(Lⁿ)X] (X=Cl, Me, H), which were characterised by NMR spectroscopy, mass spectrometry and single‐crystal X‐ray diffraction analysis. The β‐ketoimine ligands have also been used for the stabilisation of rare gallium hydride species [Ga(Lⁿ)H] (n=2 ( 7 ); n=3 ( 8 )), which have been structurally characterised for the first time, confirming the formation of five‐coordinate, monomeric species. The stability of these hydrides has been probed through thermal analysis, revealing stability at temperatures in excess of 200 °C. The efficacy of all the gallium β‐ketoiminate complexes as molecular precursors for the deposition of gallium oxide thin films by chemical vapour deposition (CVD) has been investigated through thermogravimetric analysis and deposition studies, with the best results being found for a bimetallic gallium methyl complex [L³{GaMe₂}₂] ( 5 ) and the hydride [Ga(L³)H] ( 8 ). The resulting films ( F5 and F8 , respectively) were amorphous as‐deposited and thus were characterised primarily by XPS, EDXA and SEM techniques, which showed the formation of stoichiometric ( F5 ) and oxygen‐deficient ( F8 ) Ga₂O₃ thin films.