Effect ofV K centers on positron annihilation in KCl and Ag-doped KCl

Positron lifetime spectra have been measured at 77 K for KCl and Ag-doped KCl before and after x-irradiation at 77 K and after annealing at room temperature. Radiation at 77 K reduces the intensity of the intermediate lifetime (τ₂) component. Radiation-induced defects were monitored optically and by ESR. The experiment shows that the changes observed in the positron decay are associated with the presence ofV _K centers.     

On positron annihilation in zinc

The purpose of this work is to understand Mogensen's and Petersen's positron annihilation curves for zinc. Mijnarends' approach is used as an auxiliary method of localizing inhomogeneities of the electronic density in momentum space, as defined in the paper. Evidence is found for a new effect consisting of a strong enhancement of the annihilation probability in the lenses obtained by the intersection of the Fermi surface with HMC surfaces. This effect, not the anisotropy of the Fermi surface, is the main reason for the anisotropy of the annihilation curves. Paper presented at 3rd Internat'l Conf. Positron Annihilation, Otaniemi, Finland (August 1973).     

Hydrogen behaviour in electron-irradiated titanium alloys studied by positron annihilation method

Measurements of angular distribution of annihilation photons are applied to investigations of hydrogen behavior in annealed, plastically deformed, and irradiated titanium alloys. It is shown that hydrogen interaction with materials becomes more intensive in presence of structural imperfections of deformational and radiation origin. Probable mechanisms of hydrogen interaction with deformational and radiation defects are discussed.     

Computer calculation of positron diffusion and annihilation in atomic hydrogen

We have performed a computer-aided analysis of position behaviour in atomic hydrogen. Effect of electric, magnetic and temperature fields on the diffusion and annihilation of positrons has been studied. Electric field is varied over a wide range of 0–200 V cm⁻¹ amagat⁻¹, magnetic field over 0–30 kG while the temperature range considered is 300–10,000°K. The position decay rate decreases with electric and temperature fields but increases with magnetic fields. However, the effect of these fields is reversed on the diffusion coefficient.     

Evolution,migration and clustering of helium-vacancy complexes in RAFM steel- depth resolved positron annihilation Doppler broadening study

Indian Reduced Activation Ferritic Martensitic steel is implanted with 130 keV helium ions to a fluence of 5 × 10¹⁴ and 1 × 10¹⁶ ions/cm² and investigated using positron annihilation spectroscopy. The samples were characterised by defect sensitive S and W-parameters using depth resolved slow positron beam. A dose dependency is observed in the nucleation and growth of helium bubbles with annealing temperature. An experimental evidence for the migration of smaller helium-vacancy complexes is observed via the variation in thickness/width of irradiated layer with temperature. The S–W plot clearly shows the regions corresponding to defect annealing, bubble nucleation and growth.     

Experimental and theoretical positron annihilation studies on bulk nickel silicides

Bulk nickel silicides (NiSi and NiSi₂) have been studied using the experimental positron lifetime and depth-resolved positron beam measurements. Ab-initio calculations of positron lifetime for the silicides have also been carried out using the atomic superposition method. For NiSi phase, it is found that the theoretically computed positron lifetime compares favourably with the experimentally deduced value indicating that NiSi is defect free. However, for NiSi₂, the experimental positron lifetime does not compare well with the theoretical value suggesting that NiSi₂ contains vacancy defects. This is further supported by the positron diffusion lengths deduced from the VEPFIT analysis of the positron beam results.     

The role of positronium decoherence in positron annihilation in matter

A small difference between the energies of the para-positronium (p-Ps) and ortho-positronium (o-Ps) states suggests the possibility of the superposition of p-Ps and o-Ps during the formation of positronium (Ps) from pre-Ps, terminating its migration in the matter in a void. It is shown that such a superposition decoheres in the basis of p-Ps and o-Ps. The decoherence time scale estimated here motivates a correction in the precise analysis of the positron annihilation lifetime spectra. More generally, the superposited Ps state should contribute to the theory of the evolution of positronium in matter.     

Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 °C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 °C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 °C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 °C. However, after 1400 °C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.     

Effect of rare earth substitutions on some physical properties of Mn-Zn ferrite studied by positron annihilation lifetime spectroscopy

Mn-Zn ferrite substituted with rare earth ions have been investigated by means of positron annihilation lifetime spectroscopy (PALS). The variations of lifetime parameters τ_av, I₂, and κ with ionic radius of rare earth ions, grain size and electrical resistivity for all samples have been studied. The intergranular pores increase with increasing the ionic radius of rare earth ions and grain size of the samples.     

Effect of vacancy charge state on positron annihilation in silicon

The charge-state-dependent lattice relaxation of mono-vacancy in silicon is studied using the first-principles pseu- dopotential plane-wave method. We observe that the structural relaxation for the first-neighbor atoms of the mono-vacancy is strongly dependent on its charge state. The difference in total electron density between with and without charge states in mono-vacancy and its relevant change due to the localized positron are also examined by means of first-principles simu- lation, demonstrating the strong interplay between positron and electron. Our calculations reveal that the positron lifetime decreases with absolute charge value increasing.     

Free volumes in bulk nanocrystalline metals studied by the complementary techniques of positron annihilation and dilatometry

Free-volume type defects, such as vacancies, vacancy-agglomerates, dislocations, and grain boundaries represent a key parameter in the properties of ultrafine-grained and nanocrystalline materials. Such free-volume type defects are introduced in high excess concentration during the processes of structural refinement by severe plastic deformation. The direct method of time-differential dilatometry is applied in the present work to determine the total amount and the kinetics of free volume by measuring the irreversible length change upon annealing of bulk nanocrystalline metals (Fe, Cu, Ni) prepared by high-pressure torsion (HPT). In the case of HPT-deformed Ni and Cu, distinct substages of the length change upon linear heating occur due to the loss of grain boundaries in the wake of crystallite growth. The data on dilatometric length change can be directly related to the fast annealing of free-volume type defects studied by in situ Doppler broadening measurements performed at the high-intensity positron beam of the FRM II (Garching, Munich, Germany).     

Ionic conductivity of PVdF-co-HFP/LiClO4 in terms of free volume defects probed by positron annihilation lifetime spectroscopy

ABSTRACT

Polymers based on ionic conducting materials have important interest because of their potential applications in polymer electrolytes and membranes for fuel cell application. PVdF-co-HFP poly(viniliden-co-hexafluoropropylene) was chosen as a polymer matrix because of its high ionic conductivity and better mechanical properties. Polymer matrix composites were prepared with various amounts of LiClO₄ salt by a solution casting method. The sample-ionic conductivity measurements were recorded by AC impedance analyzer at different frequencies from 0.1?Hz to 20?MHz and at different temperatures from 273 to 373?K.

The changes of nanoscopic free volume and free volume fraction in these materials were investigated in terms of temperature from 273 to 373?K using Positron Annihilation Lifetime Spectroscopy (PALS) and Simha-Somcynsky (SS) Hole Theory. The free volume had a bump at about 3% in weight percentage of the salt and there is a slight increase after 10%. The effects of weight percentages of LiClO₄ and temperature were investigated. The mechanism of the ac ionic conductivity was presented in terms of the free volume models, however thermo-occupancy function justifies the best accurate representation of the data.     

Study of vacancy defects and their thermal stability in MeV Fe ion irradiated RAFM steel using positron beam Doppler broadening spectroscopy

Indian reduced activation ferritic-martensitic steel was irradiated with 1.1?MeV Fe ions to various doses from 1 to100?dpa at room temperature. The depth profiling of irradiation-induced vacancy-type defects and the defect-recovery under post-irradiation annealing was studied using variable low-energy positron beam Doppler broadening spectroscopy. The influence of irradiation-induced defects on the microstructural properties was studied by glancing incidence x-ray diffraction (GIXRD) and nanoindentation technique. Positron annihilation study showed the signatures of reduced vacancy concentration at the peak damage region due to injected interstitial effect from 30 to 100?dpa and the widening of vacancy-interstitial recombination-rich region towards the end of ion range with the increase in dose. The GIXRD results were analysed by modified Williamson–Hall plot method, and the variation of coherent domain size and micro-strain with irradiation dose was studied. Irradiation-induced hardening was observed in the nanoindentation study. The features observed in the GIXRD and nanoindentation study are correlated with the depth-resolved defect distribution observed in the positron annihilation study.     

Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum

Atomic scale properties of thin porous silicon (PSi) layers, characterized by the formation of positronium, are investigated using positron annihilation lifetime spectroscopy in the temperature range 20-300 K under 10⁻⁷ Torr vacuum. The longest orthopositronium as well as the shortest parapositronium components are found to have quite low intensities in the thin layer at room temperature. It is also found that at temperatures ≤240 K, these two components do not show up in the spectrum. The reason for this absence of the longest lifetime component is suggested.     

纳米Cu固体材料的X射线衍射与正电子湮没研究

 采用自悬浮-冷压法,在不同压力下制得纳米Cu固体材料并对其在不同温度和保温时间下进行退火,利用X射线衍射(XRD)和正电子湮没寿命谱(PAS)分析对材料的结构和微观缺陷进行了表征。XRD分析表明,压制而得的样品晶粒度为20 nm,低于300 ℃退火3 h后并未发现晶粒显著长大;PAS分析表明,压制后的样品缺陷主要为单空位和空位团,大空隙很少,随着退火温度的升高和退火时间的延长,单空位通过扩散结合成空位团,大空隙也在温度较高时分解为空位团,导致空位团的含量增加,而单空位和大空隙的含量降低。     

Assessment of the correlation between mechanical testing and positron annihilation outcomes for RPV model alloys

The correlation between recent PAS results and the outcomes from mechanical testing of RPV model alloys are presented, here significant changes due to different chemical composition and different irradiation levels are observed. The influence of alloying elements to the microstructure degradation process following irradiation was identified by analysis of the mean-lifetime parameter, since an interesting interdependency of this parameter with hardness was observed.     

Photoluminescence properties of SHI induced F2 and F3 color centers in nano-granular LiF thin films

Photoluminescence (PL) properties of swift heavy ions-induced F₂ and F₃⁺ color centers in nano-granular lithium fluoride (LiF) thin film were studied. LiF films were deposited on glass and silica substrates and irradiated with various ion species (Ag, Ni and Au) at different irradiation temperatures. The role of ion species, their fluence and the irradiation temperature on the PL intensity of color centers induced in LiF thin films is discussed.     

Compositional dependences of average positron lifetime in binary As-S/Se glasses

Compositional dependence of average positron lifetime is studied systematically in typical representatives of binary As-S and As-Se glasses. This dependence is shown to be in opposite with molar volume evolution. The origin of this anomaly is discussed in terms of bond free solid angle concept applied to different types of structurally-intrinsic nanovoids in a glass.     

Synthesis and characterization of magnesium oxide nanocrystallites and probing the vacancy-type defects through positron annihilation studies

Magnesium oxide nanocrystallites exhibit certain abnormal characteristics when compared to those of other wide band gap oxide semiconductors in the sense they are most prone to water absorption and formation of a hydroxide layer on the surface. The problem can be rectified by heating and pure nanocrystallites can be synthesized with controllable sizes. Inevitably the defect properties are distinctly divided between two stages, the one with the hydroxide layer (region I) and the other after the removal of the layer by annealing (region II). The lattice parameters, the optical band gap and even the positron annihilation characteristics are conspicuous by their distinct behavior in the two stages of the surface configurations of nanoparticles. While region I was specific with the formation of positronium-hydrogen complexes that drastically altered the defect-specific positron lifetimes, pick-off annihilation of orthopositronium atoms marked region II. The vacancy clusters within the nanocrystallites also trapped positrons. They agglomerated due to the effect of the higher temperatures and resulted in the growth of the nanocrystallites. The coincidence Doppler broadening spectroscopic measurements supported these findings and all the more indicated the trapping of positrons additionally into the neutral divacancies and negatively charged trivacancies. This is apart from the Mg²⁺ monovacancies which acted as the dominant trapping centers for positrons.     

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping.