ZnCdSe量子阱/CdSe量子点耦合结构中的激子隧穿过程

用室温光致发光谱和飞秒脉冲抽运探测方法对不同垒宽的ZnCdSe量子阱/ZnSe/CdSe 量子点新型耦合结构中激子隧穿过程进行研究，观察到激子从量子阱到量子点的快速隧穿过 程.在ZnSe垒宽为10nm, 15nm, 20nm时，测得激子隧穿时间分别为1.8ps, 4.4ps, 39ps. 关键词： ZnCdSe量子阱 CdSe量子点 激子 隧穿     

量子阱中二维电子气的性质

利用提出的三维不对称方势阱模型，对半导体量子阱中二维电子气的性质进行了研究，确定其量子能级和费米能量，并对有关结果进行了讨论。     

CdSe/CdMnSe多量子阱的激子光学性质的研究

用分子束外延在GaAs衬底上生长了CdSe/CdMnSe多量子阱结构.利用X射线衍射(XRD)、变密度激发的PL光谱、变温度PL光谱和变密度激发的ps时间分辨光谱研究了CdSe/CdMnSe多量子阱结构和激子复合特性.讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理.发现不同激发密度下发光衰减时间不同,认为它的机理可能是无辐射复合引起的.在该材料中观测到激子激子散射发射峰,它被变密度激发和变温度PL光谱所证实. 关键词： CdSe/CdMnSe 量子阱 光学性质     

GaAs/Al0.23Ga0.77As双量子阱的带边不连续性和阱间耦合

本文报道在300和77K对一组具有不同垒宽L_b0.23Ga_0.77As双量子阱样品的光调制反射谱(PR)的研究结果。除观察到11H,11L和22H等容许跃迁外,同时还识别一个从Al_0.23Ga_0.77As价带顶至量子阱第一电子束缚能级的跃迁,另一个从量子阱第一轻空穴束缚能级至Al_0.23Ga_0.77As导带底的跃迁。利用这些跃迁确定导带边不连续性为0.63。对L_{b关键词：}     

ZnS/CdS/ZnS量子点量子阱的荧光衰减

采用反胶束方法制备了ZnS/CdS/ZnS量子点量子阱，并对其光谱性质进行了研究。结果表明所制得的量子点量子阱尺寸分布均匀，平均粒径为4.5nm，发光峰位于515nm左右，归属于CdS体内的施主－受主对复合。ZnS/CdS/ZnS量子点量子阱中CdS的发光比核－壳结构的ZnS/CdS量子点增强了近四倍，荧光寿命也有所增长。     

分子束外延生长亚稳态ZnCdSe/MgSe低维量子阱结构及其光学性质

采用分子束外延技术在(001)取向的InP衬底上外延生长了亚稳态的ZnxCd1-xSe/MgSe低维量子阱结构,并通过光致发光和子带吸收方法,分析其能带结构。在单量子阱样品制备过程中,高能电子衍射强度振荡表明MgSe可以实现二维生长模式,衍射图样证明其为亚稳态闪锌矿结构。通过引入厚的ZnxCd1-xSe空间层,抑制了MgSe垒层的相变,并能进一步提高样品的结晶质量,得到高结晶质量的多量子阱结构。通过计算不同阱宽的能带与光致发光实验比较,证明了ZnxCd1-xSe/MgSe的导带带阶为1.2 eV,价带带阶为0.27 eV。为了进一步验证其能带结构,制备了电子掺杂的ZnxCd1-xSe/MgSe的多量子阱,观测到半高宽很窄的中红外吸收。利用发光谱确定的带阶计算了量子阱中子带的吸收波长,和实验结果非常吻合。设计了一种双量子阱结构,计算结果显示,通过利用量子阱中的耦合效应,可以实现1.55μm光通信波段的吸收。     

用泵浦-探测方法研究ZnCdSe量子阱/CdSe量子点复合结构中的激子衰减

用飞秒泵浦－探测方法测量了ＺｎＣｄｓｅ量子阱／ＺｎＳｅ／ＣｄＳｅ量子点复合结构样品的透射特性。样品中ＺｎＳｅ垒层厚度为 １５ｎｍ,泵浦一探测结果得到上升沿时间为 ３６７±６０ｆｓ,下降沿时间为１．３±０．２ｐｓ。获得ＺｎＣｄＳｅ量子阱中激子寿命约为１ｐｓ。     

ZnCdSe/ZnSe多量子阱的生长和激子光学性质的研究

用分子束外延在GaAs衬底上生长了ZnCdSe/ZnSe多量子阱结构.利用X射线衍射(XRD)、变温度PL光谱和ps发光衰减等研究了ZnCdSe/ZnSe多量子阱结构和激子复合特性.由变温PL光谱讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理.     

ZnS／CdS／ZnS量子点量子阱的制备及光学特性

采用反胶束方法制备了ZnS/CdS/ZnS量子点量子阱结构，并对其光谱特性进行了研究，得到了350－600mm范围的发光，发现完整的ZnS壳层可使发光增强数倍。     

Characteristics of degenerated four wave mixing in ZnS/CdSe/ZnS quantum dot quantum well with multi-shell structure

The wave functions and eigenenergies of electrons in ZnS/CdSe/ZnS cylindrical quantum dot quantum well (QDQW) have been calculated by solving a three-dimensional nonlinear Schrödinger equation, in the framework of the effective-mass envelope-function theory. The third-order susceptibilities of the degenerated four waves mixing (DFWM) have been calculated theoretically by means of compact density matrix. The third-order susceptibilities as the function of the shell radius R₂, R₃ have been analyzed. The results show that the magnitude of nonlinear susceptibility is increased with the increasing of well radius. The resonance frequency of the photon have a shift when R₂ or R₃ is increasing and the relation between nonlinear susceptibility and relaxation time has also been studied.     

Core-shell structure and quantum effect of CdSe/HgSe/CdSe quantum dot quantum well

Core-shell structure CdSe/HgSe/CdSe quantum dot quantum well (QDQW) nanocrystals were firstly synthesized and well controlled by colloidal chemical methods. High-resolution transmission electron microscope (HRTEM) photographs show that the CdSe core has a wurtzite crystal structure and the shell of HgSe has a hexagonal structure. The enhancement and blue shift of photoluminescence (PL) peak was observed which was attributed to the quantum confinement effect of carriers in the HgSe well.     

Bound polaron in quantum dot quantum well structures

The problem of bound polarons in quantum dot quantum well (QDQW) structures is studied theoretically. The eigenfrequencies of bulk longitudinal optical (LO) and surface optical (SO) modes are derived in the framework of the dielectric continuum approximation. The electron--phonon interaction Hamiltonian for QDQW structures is obtained and the exchange interaction between impurity and LO-phonons is discussed. The binding energy and the trapping energy of the bound polaron in CdS/HgS QDQW structures are calculated. The numerical results reveal that there exist three branches of eigenfrequencies of surface optical vibration in the CdS/HgS QDQW structure. It is also shown that the binding energy and the trapping energy increase as the inner radius of the QDQW structure decreases, with the outer radius fixed, and the trapping energy takes a major part of the binding energy when the inner radius is very small.     

Well width‐dependent electron Raman scattering in ZnS/CdSe cylindrical quantum dot quantum well

Electron Raman scattering (ERS) is investigated in ZnS/CdSe cylindrical quantum dot quantum well (QDQW). The differential cross section (DCS) is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. Different scattering configurations are discussed and the selection rules for the processes are also studied. Singularities in the spectrum are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems. Copyright © 2008 John Wiley & Sons, Ltd.     

Band structure and impurity effects on optical properties of quantum well and quantum dot infrared photodetectors

We examined theoretically band structure and discrete dopant effects in the quantum well infrared photodetector (QWIP) and the quantum dot infrared photodetector (QDIP). We find that in QWIPs discrete dopant effects can induce long wavelength infrared absorption through impurity assisted intra-subband optical transitions. In QDIPs, we find that a strategically placed dopant atom in a quantum dot can easily destroy the symmetry and modify the selection rule. This mechanism could be partially responsible for normal incidence absorption observed in low-aspect-ratio quantum dots.     

闪锌矿GaN/AlGaN量子点中激子态及光学性质的研究

在有效质量近似的框架下,运用变分方法研究闪锌矿GaN/AlGaN量子点中的激子态及相关光学性质,探讨电子与空穴在量子点中的三维空间受限和有限势效应.数值计算结果显示,当量子点的尺寸增加时, 量子尺寸效应对电子和空穴的影响减弱,基态激子结合能和带间光跃迁能也都降低;而当该量子点中垒层AlGaN中 Al含量增加时,提高了量子点对电子和空穴的束缚作用, 同时基态激子结合能和带间光跃迁能都增加.数值的理论结果与相关实验测量结果一致.     

Electronic structure of two-electron quantum dot with parabolic potential

In this study, we investigate the parabolic potential effects on the ground and excited energy states of two-electron quantum dot with impurity inside an infinite spherical confining potential well. The wave function and energy eigenvalues were calculated using a modified variational optimization procedure based mainly on quantum genetic algorithm and Hartree–Fock–Roothaan method. The results show that the parabolic potential and impurity charge have a strong effect on the energy states and ionization energies. It is worth pointing out that as impurity charge increases, the ionization energy rises, but the ionization dot radius decreases. On the other hand, as parabolic potential increases, the ionization energy decreases, but the ionization dot radius increases.     

Impurity related optical properties in tuned quantum dot/ring systems

In this paper, we explore the linear, third-order nonlinear, and total optical absorption coefficient (OAC) and refractive index change coefficient (RICC) of a GaAs doped quantum dot/quantum ring (QD/QR) with parabolic-inverse squared potential in conjunction with modified Gaussian confinement and taking into account the presence of on-centre shallow donor and or acceptor impurity. Calculations are done via the compact density matrix formalism and the iterative method. The two-dimensional parabolic QD/QR is subjected to uniform magnetic field oriented perpendicularly to the plane of the structure. The energy levels and wave function are derived within the framework of effective-mass and parabolic band approximation. The results exhibit that the OACs and RICC are clearly affected by different parameters of the applied confinement, strength of magnetic field, and the presence of impurity. The variation of confinement potential, nature of impurity, dot radius, cyclotron frequency of the parabolic confinement potential, and geometric parameter of the on-centre repulsive potential lead to either a red-shift or a blue-shift of the resonant peaks of the OACs and of the maximum and minimum of the RICC together with significant variations of the magnitudes of these resonant structures.     

Electronic structure and nonlinear optical properties of a two-dimensional hexagonal quantum dot

In this work electronic structure, the linear and the third-order nonlinear refractive index changes as well as optical absorption coefficients of a two-dimensional hexagonal quantum dot are investigated. Energy eigenvalues and eigenfunctions of the system are calculated by the matrix diagonalization technique, and optical properties are also obtained using the compact density matrix approach. As our results indicate, both the dot size and the confinement potential have a great influence on the intersubband energy intervals, the transition probability and consequently, the linear and the third-order nonlinear refractive index changes and optical absorption coefficients.