Linear polarization of radiation from ZnCdSe/ZnSe quantum wells induced by the anisotropic profile of interfaces

The low-temperature spectra of the exciton luminescence of the ZnCdSe/ZnSe quantum well grown in the [100] direction have been analyzed. It has been found that the observed radiation is linearly polarized in the well plane along either the [011] axis or the orthogonal $[0\bar 11]$ axis depending on the energy of exciting light. Polarization along the [011] axis is associated with the anisotropy of the geometric profiles of interfaces and corresponds to the polarization of excitons localized in the terraces elongated along the [011] axis, which are regions corresponding to an increase in the well thickness by a depth of one or several monolayers. The terraces appear due to the existence of growth steps on the interfaces. Anisotropy in the distribution of growth steps, i.e., a longer length of the steps along the [011] axis, is also responsible for the appearance of polarization along the $[0\bar 11]$ axis. Such a polarization appears due to the found specific channel of anisotropic exciton absorption. As a result of such absorption, free excitons with large wave vectors are excited. The excitation of excitons by light is indirect, because it involves additional processes of the elastic scattering of excitons on the interface growth steps. Prevailing scattering on an ensemble of longer growth steps (along the [011] axis) leads to the alignment of the wave vectors of excited excitons. A difference between the absorption probabilities for the polarizations of excitation along the [011] and $[0\bar 11]$ axes is caused by a difference between the probabilities of scattering on steps for excitons whose dipole moments and, correspondingly, the axes of the P-type wave functions for the holes involved in the process are oriented along and across the direction of the alignment of wave vectors of excitons.     

Thickness dependence of microstructures in La0.9Sr0.1MnO3 thin films grown on exact-cut and miscut SrTiO3 substrates

The thickness dependence of microstructures of La_0.9Sr_0.1MnO₃ (LSMO) thin films grown on exact-cut and miscut SrTiO₃ (STO) substrates, respectively, was investigated by high-angle X-ray diffraction (HXRD), X-ray small-angle reflection (XSAR), X-ray reciprocal space mapping and atomic force microscopy (AFM). Results show that the LSMO films are in pseudocubic structure and are highly epitaxial [0 0 1]-oriented growth on the (0 0 1) STO substrates. The crystalline quality of the LSMO film is improved with thickness. The epitaxial relationship between the LSMO films and the STO substrates is [0 0 1]_LSMO[0 0 1]_EXACT-STO, and the LSMO films have a slight mosaic structure along the q_x direction for the samples grown on the exact-cut STO substrates. However, an oriented angle of about 0.24° exists between [0 0 1]_LSMO and [0 0 1]_MISCUT-STO, and the LSMO films have a mosaic structure along the q_z direction for that grown on the miscut STO substrates. The mosaic structure of both groups of the samples tends to reduce with thickness. The diffraction intensity of the (0 0 4) peaks increases with thickness of the LSMO film. The XSAR and AFM observations show that for both groups, the interface is sharp and the surface is rather smooth. The mechanism was discussed briefly.     

Determination of the step distance on a crystal surface by surface channeling

The scattering of grazingly incident ions on a crystal surface under axial surface channeling conditions is sensitive to consecutive upward surface steps. The comparison of the experimentally observed scattering yield with computer simulations provides a sensitive method to determine the mean terrace width of the upward steps in a region of about 30 to 300 atomic distances. Applying this method, we have found that the mean terrace width of an electropolished NiFe (110) surface is 75 atomic distances along the [11?0] lattice direction.     

Growth morphology of {1 0 1} surfaces of l-arginine trifluoroacetate crystals investigated by AFM

Surface morphology of {1 0 1} surfaces of l-arginine trifluoroacetate (LATF) crystals have been investigated by atomic force microscopy (AFM). The dominant growth mechanism of the LATF crystals is the formation and expansion of dislocation spirals. Rectangular dislocation growth hillocks oriented with their longer sides in the [0 1 0] direction, which indicates the fast growth along this direction. Apart from that, typical step morphologies are presented and discussed on the basis of the observations.     

Dislocation injection, reconstruction, and atomic transport on {001} Au terraces

High-resolution electron microscopy investigations of Au films show that adatoms on (100) surfaces insert into the underlying terrace to form surface dislocations. This injection readily occurs when the number of adatoms on a terrace is approximately 20 atoms or less. The surface dislocation glides along the terrace, but is repelled from the edges. The dislocation escapes by squeezing out in the dislocation line direction (not gliding out the terrace edge). Atomistic simulations confirm the dislocation stability, easy glide along the terrace and trapping at the terrace edge. These results have profound implications for film growth.     

Interaction of a Surface Acoustic Wave with a Two-dimensional Electron Gas

When a surface acoustic wave （SAW） propagates on the surface of a GaAs semiconductor, coupling between electrons in the two-dimensional electron gas beneath the interface and the elastic host crystal through piezoelectric interaction will attenuate the SAW. The coupling coemcient is ~alculated for the SAW propagating along an arbitrary direction. It is found that the coupling strength is strongly dependent on the propagating direction. When the SAW propagates along the [011] direction, the coupling becomes quite weak.     

Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates

Compositionally undulating step-graded Al(Ga)In_xAs(x = 0.05–0.52) buffers with the following In P layer were grown by metal–organic chemical vapor deposition(MOCVD) on(001) GaAs with a 15°miscut. The dislocation distribution and tilts of the epilayers were examined using x-ray rocking curve and(004) reciprocal space maps(RSM) along two orthogonal 《110》 directions. The results suggested that such reverse-graded layers have different effects on α and βdislocations. A higher dislocation density was observed along the [110] direction and an epilayer tilt of-1.43°was attained in the [1-10] direction when a reverse-graded layer strategy was employed. However, for conventional step-graded samples,the dislocation density is normally higher along the [1-10] direction.     

Interaction of a Surface Acoustic Wave with a Two-dimensional Electron Gas

When a surface acoustic wave (SAW) propagates on the surface of a GaAs semiconductor, coupling between electrons in the two-dimensional electron gas beneath the interface and the elastic host crystal through piezoelectric interaction will attenuate the SAW. The coupling coefficient is calculated for the SAW propagating along an arbitrary direction. It is found that the coupling strength is strongly dependent on the propagating direction. When the SAW propagates along the [011] direction, the coupling becomes quite weak.     

A reversible reaction forming (---Cu---O---) strings and (Cu)6-clusters on Ag(110) shown by STM

An artificial new surface of (---Cu---O---) chains grown on Ag(110) surface was prepared by reacting a surface with Cu atoms, where the (---Cu---O---) chains grow in the [1 0] direction and are self-assembled on the Ag(110) surface in a (2 x 2)-p2mg structure. When the Cu---O/Ag(110) surface was heated in vacuum, the (---Cu---O---) chain decomposed to uniform cluster dots arranged along the [1 0] direction, where the cluster dots were composed of six Cu atoms. When the Ag(110) surface with the Cu---cluster dots was exposed to O₂, the (---Cu---O---) lines were redrawn along the [1 0] direction by reacting a s in the [1 0] direction with O₂. This is a reversible chemical reaction in one dimensional regime proved in atomic resolution.     

Growth of single-domain monatomic In chain arrays on the vicinal Si(0 0 1) surface

Using the annealed vicinal Si(0 0 1) surface with 4° miscut toward the [1 1 0] direction as a substrate, single-domain monatomic In chain arrays have been fabricated. High-resolution STM images reveal that deposited In atoms preferentially form In dimers between two neighboring Si dimer rows along the step edges on the lower terrace. Formation of In dimers removes the surface dangling bonds and saturates the In valency. With increasing coverage, the In dimers develop into straight monatomic In chains along the step running direction. It is found that the ordered narrow terrace and rebonded double-layer (D_B) step edge are the keys for the formation of monatomic In chains.     

X-ray topography of polydiacetylene single crystals prepared by using physical vapor growth technique

The lattice defects in polydiacetylene (PDA) single crystals prepared using physical vapor growth were investigated by white beam X-ray topography. Line patterns along the [0 0 1] and [1 0 2] directions were clearly observed. Appearance of the line patterns along the [0 0 1] direction proves the polymerization direction predicted by Hädicke et al. The topographic results are in good agreement with the surface morphologies investigated by atomic force microscopy (AFM).     

Morphologies of solid-liquid interface and surface steps during rapid growth of BaB<Subscript>2</Subscript>O<Subscript>4</Subscript> single crystals

The evolution of solid-liquid interface during BBO single crystal growth was studied by the differential interference microscopy. And the step morphology on (0001) surface of the as-grown crystal was observed by the atomic force microscopy as well. It was found that the transition from a flat solid-liquid interface to a skeletal shape will occur in case of rapid growth. However, AFM images of surface steps revealed morphology differences correlated with crystallographic directions. The steps advancing along 〈10 0〉 direction form the step flow, whereas those steps propagating along 〈01 0〉 direction shape into step segments. Measurements of step heights by AFM indicated that it is the high anisotropy of the dimension of growth unit and step bunching due to the enlargement of concentration difference along the surface that results in the anisotropy of step morphologies. Supported by the National Natural Science Foundation of China (Grant No. 50331040) and the Innovation Funds from Shanghai Institute of Ceramics, Chinese Academy of Sciences (Grant No. SCX0623)     

LEED studies of adsorption on vicinal copper surfaces

As a means for studying the role of atomic steps in adsorption phenomena LEED has been used to investigate the properties of vicinal copper surfaces. Single crystalline surfaces were cut at angles up to 20° from the (100) pole along [001] and [011&#x0304;] zones. The diffraction patterns obtained for the clean surfaces and after adsorption of oxygen, nitrogen ions, carbon and sulphur are described. The emphasis of the paper is on the method of interpretation of the geometry of the patterns, which may be done by straightforward kinematic analyses. In the case of nitrogen it is found that if the steps are widely separated the structure of the layer adsorbed on the terrace is the same as that on the low index surface. When the step spacing is small, and comparable with the crystalline parameter of the adsorbed layer, modifications occur which give rise to different superlattices which extend over several terraces. Adsorption of sulphur on 〈11〉 steps can produce a change in the periodicity of the adsorbed layer parallel to the step direction. The study of diffraction patterns for vicinal surfaces with different step spacings may provide an interesting technique for verifying the interpretation of patterns for low index surfaces.     

Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(3 1 1)A and (1 0 0) substrates

We report on the morphology and properties of the surface formed by molecular-beam epitaxy on shallow mesa gratings on patterned GaAs(3 1 1)A and GaAs(1 0 0). On GaAs(3 1 1)A substrates, the corrugated surface formed after GaAs growth on shallow mesa gratings along is composed of monolayer high steps and (3 1 1)A terraces. These pattern induced steps which are different on opposite slopes play an important role in InAs growth on this novel template leading to distinct lateral modulation of the island distribution. On GaAs(1 0 0) substrates, growth on shallow mesa gratings along [0 1 1], [0 1 0] and is drastically sensitive to the pattern direction due to the difference of steps along [0 1 1] and .     

铁的冲击相变机制的分子动力学研究

 用分子动力学方法模拟计算了在冲击波加载条件下,单晶铁中的结构相变（由体心立方结构α相到六角密排结构ε相）,相互作用势采用铁的嵌入式原子势（EAM）,单晶铁样品的尺寸为28.7 nm×22.9 nm×22.9 nm,总原子数为1.28×10⁶个。通过推动一个运动活塞对静止靶的作用来产生冲击压缩,加载方向沿单晶铁的[100]晶向。通过对原子位置的追踪,揭示了铁的冲击相变机制,计算结果表明相变机制包括两步：首先是在{011}面上的原子受到沿〈100〉晶向的压缩,使{011}面转化成正六角形密排面;然后是在{011}面上原子沿〈0-11〉晶向的滑移,完成由bcc结构到hcp结构的相变。同时发现滑移面只出现在与冲击波加载方向平行的(011)和(0-11)面上。     

Orientation dependence of structural transition in fcc Al driven under uniaxial compression by atomistic simulations

By molecular dynamics simulations employing an embedded atom method potential,we have investigated structural transformations in single crystal Al caused by uniaxial strain loading along the [001],[011] and [111] directions. We find that the structural transition is strongly dependent on the crystal orientations. The entire structure phase transition only occurs when loading along the [001] direction,and the increased amplitude of temperature for [001] loading is evidently lower than that for other orientations. The morphology evolutions of the structural transition for [011] and [111] loadings are analysed in detail. The results indicate that only 20% of atoms transit to the hcp phase for [011] and [111] loadings,and the appearance of the hcp phase is due to the partial dislocation moving forward on {111} fcc family. For [011] loading,the hcp phase grows to form laminar morphology in four planes,which belong to the {111} fcc family; while for [111] loading,the hcp phase grows into a laminar structure in three planes,which belong to the {111} fcc family except for the (111) plane. In addition,the phase transition is evaluated by using the radial distribution functions.     

The nucleation of faulted dipoles at intersection jogs in γ-TiAl

Single crystal samples of n-(Ti-54.7 at.% Al) deformed to a permanent strain of 2% at room temperature under multiple-slip conditions contain faulted dipoles (FDs) whose density exhibits some dependence on load orientation. Although FDs are hard to observe after compression along [210], they are profuse and congregated in places in the [1 1 8.6] load orientation. They exhibit most of the topological characteristics of FDs formed under single slip as reported by Grégori and Veyssière such as elongation in the screw direction of the primary d011] slip direction and a noticeable shape asymmetry. It is shown further that, in the [1 1 8.6] samples, bundles of FDs originate at jogs that result from intersection with forest dislocations of appropriate Burgers vectors. A mechanism for FD nucleation is proposed on the basis of asymmetrical dissociation of the parent d011] dislocation and specific impingements between the various partials on two adjacent octahedral planes. Implications of the FD nucleation at jogs on the load orientation dependence of the FD density are discussed.     

Effects of magnetic field on shape evolution of Fe–Co particles in a Cu matrix

The effects of magnetic field on the shape evolution of ferromagnetic fcc Fe–Co particles in Cu–0.83 at.% Fe–1.37 at.% Co alloy single crystals were examined using magnetic anisotropy measurements. The Cu–Fe–Co single crystals were aged at 993 K for 2 h to 24 h under a magnetic field of 10 T parallel to either the [001] or [011] direction. The magnetic anisotropy was examined by measuring magnetic torque around the (100) plane. It was found that the fcc Fe–Co particles are elongated in the direction parallel to the magnetic field. Furthermore, the elongation along [001] is more remarkable than that along [011]. The results are explained quantitatively by considering the minimization of the sum of the interface energy, elastic strain energy and magnetostatic energy of spheroidal particles.     

Structure and homoepitaxial growth of GaAs(6 3 1)

We have studied the surface atomic structure of GaAs(6 3 1), and the GaAs growth by molecular beam epitaxy (MBE) on this plane. After the oxide desorption process at 585 °C reflection high-energy electron diffraction (RHEED) showed along the [−1 2 0] direction a 2× surface reconstruction for GaAs(6 3 1)A, and a 1× pattern was observed for GaAs(6 3 1)B. By annealing the substrates for 60 min, we observed that on the A surface appeared small hilly-like features, while on GaAs(6 3 1)B surface pits were formed. For GaAs(6 3 1)A, 500 nm-thick GaAs layers were grown at 585 °C. The atomic force microscopy (AFM) images at the end of growth showed the self-formation of nanoscale structures with a pyramidal shape enlarged along the [5−9−3] direction. Transversal views of the bulk-truncated GaAs(6 3 1) surface model showed arrays of atomic grooves along this direction, which could influence the formation of the pyramidal structures.     

Nanowedge island formation on Mo(1 1 0)

The deposition of ultrathin Fe films on the Mo(1 1 0) surface at elevated temperatures results in the formation of distinctive nanowedge islands. The model of island formation presented in this work is based on both experiment and DFT calculations of Fe adatom hopping barriers. Also, a number of classical molecular dynamics simulations were carried out to illustrate fragments of the model. The islands are formed during a transition from a nanostripe morphology at around 2 ML coverage through a Bales-Zangwill type instability. Islands nucleate when the meandering step fronts are sufficiently roughened to produce a substantial overlap between adjacent steps. The islands propagate along the substrate [0 0 1] direction due to anisotropic diffusion/capture processes along the island edges. It was found that the substrate steps limit adatom diffusion and provide heterogeneous nucleation sites, resulting in a higher density of islands on a vicinal surface. As the islands can be several layers thick at their thinnest end, we propose that adatoms entering the islands undertake a so-called “vertical climb” along the sides of the island. This is facilitated by the presence of mismatch-induced dislocations that thread to the sides of the islands and produce local maxima of compressive strain. Dislocation lines also trigger initial nucleation on the surface with 2-3 ML Fe coverage. The sides of the nanowedge islands typically form along low-index crystallographic directions but can also form along dislocation lines or the substrate miscut direction.