直流表面接触电阻测试技术

针对金属材料直流表面接触电阻的特点,研制成功一套平板型金属材料直流表面接触电阻测试装置,实现了金属试样表面接触电阻的自动测量和数据处理.所研制测试系统的接触电阻测试动态范围为0.01mΩ～20Ω,测试结果对电磁兼容性结构设计工作具有重要的指导意义.     

温差电器件接触电阻和接触热阻的测试及分析

接触电阻和接触热阻是影响温差电器件性能的两个重要的工艺参数，直接反映器件制造的工艺水平。因此，对器件的接触电阻和接触热阻进行测试分析，将能够定量地了解现行工艺对器件温差电性能的影响程度。本文首先介绍接触电阻的测试方法和实验结果，然后利用所测的数据，再通过对器件输出功率特性的测试，间接地导出器件的接触热阻。据笔者所知，这是温差电器件接触热阻实测数值的首次报道。     

试验和老化插座的发展

试验插座的设计必须满足当今试验环境的电气要求而不牺牲机械性能。1.引言现代高密度和高速度集成电路(IC)器件已经改变了试验插座设计师对于机械和电气     

参数测试问题?请在使用检修仪器之前检查探针接触电阻

参数测试仪广泛应用于半导体产品、工艺过程开发以及生产监控。当测试结果与预期不符合的时候,请首先检查信号路径以发现潜在的问题。参数测试系统将电流或电压输入被测器件(DUT),然后测量该器件对于此输入信号的响应。这些信号的路径为:从测试仪通过电缆束至测试头,再通过测试头至探针卡,然后通过探针至芯片上的焊点,到达被测器件,并最后沿原路径返回测试仪器。通常,测量仪器引进一些噪声或测量误差,更可能导致误差的原因是系统的其它部件。在对仪器进行检测前,最好先检查信号路径以发现潜在的问题。其中之一可能是接触电阻,它会受探针参…     

新型接触电阻检测仪的应用

互连器件接触电阻检测,一直是系统连接后判别每个接点接触是否可靠良好,必须解决的实际问题。随着高密度、小型化的互连器件在电子电气设备上的广泛应用,如何解决互连器件接触电阻的在线自动检测,己成为确保互连器件质量和可靠性的关键。文中在详细阐述接触电阻检测原理的基础上,介绍了新研制的TDO-MCR-07A多接点接触电阻检测仪特点、检测方法和主要技术参数,以及连接电脑和工装组成自动检测系统后,成功用于保险丝盒接触电阻自动检测的实例。     

集成电路老化测试插座的结构形式

集成电路(IC)老化测试插座(以下简称老化测试插座)主要应用于集成电路产品的检测、老化、筛选等场合,其最大的用户是集成电路器件制造厂。本文对集成电路老化测试插座的结构形式做一简单的介绍。     

减小薄膜精密低阻网络接触电阻的体会

<正> 近几年来,随着我国电子技术的发展,电阻网络已成为增长最为迅速的电子元件之一,电阻网络的品种和规格也在不断增加。电阻网络的精度、稳定性,以及分布参数的大小,在某种程度上决定了A/D、D/A转换器的精度与速度,因此,如何保证网络电阻的精度和减少寄生参数的影响,提高其响     

On the source of scatter in contact resistance data

Previous treatments have assumed that small fluctuations in contact window dimensions between devices are chiefly responsible for the scatter in contact resistance data. Although this is plausible, it is shown in this paper that the source of this scatter is variation in contact resistivity, ρ_c, from resistor to resistor. It is further suggested that ρ_c is Cauchy distributed. Since standard deviation is in theory infinite for a Cauchy distribution, very high values of resistance at a contact window would occur with much greater frequency than common sense might suggest.     

等阻差值四线法测量接触电阻

本文针对现有四线法测量接触电阻过程中接入了被测电阻两侧部分引线电阻的问题,对四线法进行了改进,设计了一种能够直接读取接触电阻值的等阻差值四线法测量电路.利用等阻差值四线法测l量电路对导线电阻进行了测量,通过与安捷伦34401A台式万用表测量结果的对比,证明了该电路的可行性.     

触点初始接触电阻的分布特征与寿命相关性研究

为实现用初始信息来预测继电器产品的寿命,在继电器电寿命试验的基础上,提出用核概率密度估计法和多项式拟合法对触点初始接触电阻的分布特征进行分析,并研究了初始接触电阻与寿命的相关性。研究结果表明:各个继电器初始接触电阻的变化趋势不同,起伏不定。当初始接触电阻连续出现大电阻值后,即使接触电阻随后重新回到正常值,继电器仍会很快发生失效,寿命较短;继电器初始接触电阻拟合曲线的最大值与寿命之间呈现近似线性关系。     

TFT-LCD过孔接触电阻研究

研究了过孔接触电阻变化规律,并进行机理分析,为优化薄膜晶体管的过孔设计提供依据。首先,运用开尔文四线检测法对不同大小、形状、数量的钼/铝/钼结构的栅极和源/漏层金属与氧化铟锡连接过孔的接触电阻进行测试。然后,通过扫描电子显微镜、能量色散X射线光谱仪和聚焦离子束显微镜对过孔内部形貌进行表征。最后,对过孔接触电阻变化规律进行机理分析。实验结果表明:过孔面积越大,接触电阻越小;过孔面积相同时,长方形过孔的接触电阻小于正方形过孔的接触电阻,多小孔的接触电阻小于单大孔的接触电阻,栅极金属与氧化铟锡的过孔接触电阻小于源/漏层金属与氧化铟锡的过孔接触电阻。为了降低钼/铝/钼与氧化铟锡连接过孔的接触电阻,过孔面积尽可能最大化,采用长方形过孔优于正方形过孔,多小过孔优于单大孔设计,同时优化过孔刻蚀工艺,减少过孔内顶层钼的损失。     

CTLM测量金属/半导体欧姆接触电阻率

系统地介绍了用圆形传输线模型（ Ｃ Ｔ Ｌ Ｍ） 测量金属／ 半导体欧姆接触电阻率的基本原理。以 Ａｌ／ Ｓｉ 接触为例研究了不同掺杂浓度和不同温度退火对接触特性和接触电阻率ρ Ｃ 的影响。测量得到 Ａｌ／ Ｓｉ 欧姆接触电阻率的最小值约为２ ．４ ×１０ － ５ Ω·ｃｍ ２ 。     

Origin and prevention of high contact resistance in multilevel metal-polyimide structures

When polyimide is used as the insulating dielectric in multilevel-metal structures, a high contact resistance can result within the interconnecting vias. This paper examines the particular case of oxygen plasma patterning of the polyimide using a photoresist mask. Auger analysis in combination with compositional depth profiling was employed on a series of samples to measure surface composition of etched vias in polyimide. Results show two effects which, together, can account for high contact resistance: first, there is a thicker than normal aluminum oxide layer on the first level metal surface (due to exposure to the oxygen plasma); second, there is a thin, etch-resistant carbonaceous film (due to redeposition of organic material during plasma etching) that prevents oxide thinning through chemical means. It was found that by lowering the plasma pressure to 50 mTorr near the end of the etch, the organic film can be removed. In the absence of the carbonaceous layer, the oxide can then be chemically thinned to produce clean aluminum surfaces within the vias.     

Explanation of high solar cell diode factors by nonuniform contact resistance

The current density–voltage ( J – V ) curve that characterises the performance of a solar cell is often extra rounded, resulting in reduced efficiency. When fitting to the standard one‐dimensional models, it is often found that the rounding cannot be fitted by the series resistance only. In these cases, the diode factor m or the depletion region saturation current density J _0DR (depending on the model used) is increased. This behaviour could not be explained so far; this paper discusses if a nonuniform contact resistance of the front side metallisation leads to an increase of m or J _0DR. The theoretical part of the investigation is the simulation of the curve for a cell with two regions with different contact resistance. It was found indeed that m or J _0DR is increased, while the series resistance is not increased as much as expected. The experimental part was the calculation of the J – V curve of a high‐ m solar cell with local contact resistances measured with the so‐called Corescan and the cell's resistanceless J – V curve as measured with the so‐called Suns‐ V _oc method. The calculated curve approximated the actual curve quite well, demonstrating in practice that high diode factors can be explained by nonuniform contact resistance. Copyright © 2004 John Wiley & Sons, Ltd.     

弹片连接的弱力接触电阻测试与分析

弹片作为一种重要的电连接器,它的可靠性会直接影响设备的电性能。研究弹片电连接的规律和影响因素,对于提升设备性能并节约成本具有重要意义。本文通过软件仿真及实验测量,测试了在弱外加力(<2 N)的条件下,以弹片为代表的电连接部件,接触电阻阻值随着接触金属面材料的电阻率减小而减小,且随着外加力的增大而减小的规律。通过机械接触理论分析及计算,验证了接触电阻会受到材料的电阻率与外加力影响;对弹片的接触电阻产生机理给出了明确解释,能够更准确地判断弹片与不同接触界面产生接触电阻的大小关系。     

A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation

The effects of implanted Ge on the resistance of nickel-metal contacts to n-type and p-type 4H-SiC are reported. The Ge was implanted with an energy of 346 keV and a dose of 1.7×10¹⁶ cm⁻², and the wafer was annealed up to 1700°C for 30 min. Contact resistance measurements using the transfer length method (TLM) were performed on etched mesas of n-type and p-type 4H-SiC, with and without the Ge. For the annealed-Ni metal contacts, the Ge lowered the specific contact resistivity from 5.3×10⁻⁴ Ωcm² to 6.0×10⁻⁵ Ωcm² for n-type SiC and from 1.2×10⁻³ Ωcm² to 8.3×10⁻⁵ Ωcm² for p-type SiC. For the as-deposited (unannealed) Ni, the Ge produced ohmic contacts, whereas the contacts without Ge were rectifying. These results suggest that the addition of Ge can be an important process step to reduce the contact resistance for SiC-device applications.     

金属Al与半导体Ge欧姆接触的制备和表征

基于圆形传输线模型,通过测试样品的比接 触电阻率和电流-电压(I-V)特性曲线,分析 对比了Al与Si基上外延生长的p型Ge、n型Ge和n型Si的接触特性。实验结果发现,由于金 属与Ge材料接触存在强烈的费米钉效应,导致金属与n型Ge接触有高的接触电阻,难实 现低的比接触电阻率;而Al与p型Ge在掺杂浓度为4.2×10¹⁸ cm－3时,并且经过退火,比接 触电阻率能达到4.0×10－7 Ω·cm²;Al与n型Ge和n型Si接 触电极相比,后者可形成良好的 欧姆接触,其比接触电阻率较n型Ge接触降低了1个量级,经合金化处理后的Al/n⁺Si接触 电阻率能达到5.21×10－5 Ω·cm²,达到了制作高性能Ge 光电器件的要求。