离子液体掺杂聚苯胺/纳米铜修饰电极制备及其在过氧化氢测定中的应用

在离子液体1-甲基咪唑-三氟乙酸中用循环伏安法(CV)电聚合苯胺制得离子液体掺杂聚苯胺膜修饰玻碳电极(IL-PANI/GCE),进一步在其表面原位电沉积纳米铜粒子,构制用于测定H2O2的新型离子液体掺杂聚苯胺/纳米铜(nano-Cu/IL-PANI/GCE)电化学传感器。用扫描电镜(SEM)、循环伏安法(CV)和电化学阻抗谱法(EIS)表征此修饰电极,并讨论了其对H2O2的电催化还原机制。在0.1 mol/L NaOH溶液和"0.35 V电位下,用电流法测定了H2O2的含量,在20～1.12 mmol/L浓度范围内线性关系良好;检出限为0.1μmol/L,响应时间约为3 s。     

双席夫碱铜配合物修饰玻碳电极用于碳酸饮料中苯甲酸的测定

利用溶液法制备双席夫碱铜配合物(M),采用电沉积法将制备的M沉积在玻碳电极(GCE)上制备了双席夫碱铜配合物修饰电极(M/GCE),用于测定碳酸饮料中的苯甲酸的含量。元素分析和红外光谱结果显示,试验成功制备了M;电沉积过程循环伏安曲线变化结果显示M已成功沉积在了GCE表面;扫描电镜(SEM)结果显示M/GCE表面已形成了一层聚合物膜。三电极体系选用M/GCE(工作电极)、饱和甘汞电极(参比电极)、铂丝电极(辅助电极);支持电解质采用0.1mol·L~(-1) KCl溶液;电化学方法选用循环伏安法(CV),扫描速率为50mV·s~(-1)。结果表明,苯甲酸在M/GCE上的氧化峰电位和还原峰电位分别位于-0.007,-0.359V附近,电极反应可逆性良好,受扩散控制。苯甲酸浓度与其对应的氧化峰电流在0.001 0～2.000 0mmol·L~(-1)内呈线性关系,检出限(3S/N)为0.27μmol·L~(-1)。将电极在4℃下放置7d后,苯甲酸氧化峰电流下降了4.8%。以雪碧样品为基质进行了加标回收试验,回收率为97.6%～102%,测定值的相对标准偏差(n=5)为1.2%。     

常温下从离子液体电解液中电沉积金属钴

研究了离子液体镀液中Co、Zn的共沉积行为。ZnCl2-EMIC -CoCl2电解液的循环伏安曲线上出现了三个电流峰,对应的电极电位分别为250mV、50mV、-200mV（vs. Zn2+/Zn）。结合EDS成分分析,可断定这三个电流峰分别对应着Co的电沉积、Co电极上Zn的欠电位沉积和Co-Zn合金的电沉积。恒电位沉积表明,当控制阴极电位在100 mV（vs. Zn2+/Zn）左右时,可得到高纯度的钴镀层;若进行恒电流沉积,则当电流密度为85mA/cm2左右时能够得到高纯度的钴镀层。对Co、Zn的共沉积机理研究表明,Co的电沉积过程和Zn 在Co上的欠电位沉积过程均受扩散过程控制。     

铜电极表面铜锡合金电结晶机理

在弱酸性柠檬酸盐体系铜锡合金镀液中,采用线性扫描伏安(LSV)、循环伏安(CV)和计时安培实验方法,运用Scharifker-Hills(SH)理论模型和Heerman-Tarallo(HT)理论模型分析拟合实验结果,研究铜锡合金在铜电极上的电沉积过程与电结晶机理.结果表明,铜锡合金在铜电极表面实现共沉积并遵循扩散控制下三维瞬时成核的电结晶过程.电位阶跃从-0.80 V负移至-0.85 V(vs SCE),HT理论分析得到铜锡合金的成核与生长的动力学参数分别为成核速率常数(A)值从20.19 s-1增加至177.67 s-1,成核活性位点密度数(N0)从6.10×105cm-2提高至1.42×106cm-2,扩散系数(D)为(6.13±0.62)×10-6cm2s-1.     

硝基苯在羧基化多壁碳纳米管修饰电极上的电还原特性

研究了硝基苯在羧基化多壁碳纳米管修饰电极上的电化学行为,探讨了硝基苯的电还原机理。结果表明:在0.2 mol.L-1硫酸溶液中,修饰电极对硝基苯具有明显的催化作用,其还原峰电位由裸玻碳电极上-0.44 V正移至-0.35 V,正移了90 mV;氧化峰电位由0.35 V负移至0.30 V,负移了50 mV。采用循环伏安法进行硝基苯定量测定,其还原峰电流与浓度在5.0×10-7~4.2×10-5mol.L-1范围内呈线性关系,检出限(3S/N)为8.2×10-8mol.L-1。用于湖水样品中硝基苯的测定,并用标准加入法作回收试验,回收率在98.3%~100.6%之间。     

甲酸在Pt-Ru/GC电极上氧化的SERS研究

采用循环伏安(CV)法、计时电流法和电化学原位表面增强拉曼散射光谱(SERS)技术研究了甲酸在Pt-Ru/GC电极上的氧化行为, 发现甲酸在Pt-Ru/GC电极上与在粗糙Pt电极上一样, 也能自发解离出强吸附中间体CO和活性中间体—COO－. 从分子水平证实钌的加入有利于提高电极对甲酸的电催化氧化活性, 当镀液中Pt：Ru的摩尔比从10∶1变化到1∶1, CO的氧化峰电位从0.41 V负移至0.35 V, 约负移了60 mV. Pt-Ru/GC(1∶1)电极与粗糙Pt电极相比, CO在电极表面氧化完毕的电位亦负移了约200 mV. 该研究结果表明, 电化学原位表面增强拉曼散射光谱技术可望成为研究电催化反应机理的普适谱学工具.     

超重力场强化铅电沉积的规律与机理

采用循环伏安法(CV)、线性扫描法(LSV)、计时电流法研究了超重力场(超重力系数和作用方向)对铅电沉积过程(包括欠电位沉积、本体沉积和析氢副反应)的影响. 结果表明, Pb(NO3)2溶液中, 在所有超重力条件下, 铅的本体沉积和欠电位沉积均得到一定程度的强化, 析氢副反应得到抑制; 当超重力作用方向为垂直背向时(VBD), 超重力对电沉积过程的强化程度最大; 在超重力场中对废水中的铅进行电化学处理后, 溶液中的残余Pb2+浓度要远远小于常重力条件下的Pb2+浓度.     

乙酰半胱氨铜自组装修饰金电极作为生物传感器测定一氧化氮

将铜离子共价键合到自组装在Au电极表面的乙酰半胱胺单分子层上,获得了乙酰半胱胺铜自组装单分子膜修饰电极(CuACYS CME),研究了它的电化学性质,并采用扫描电子显微镜(SEM),X射线荧光仪(XRFS),X射线光电子能仪(XPS)以及循环伏安法(CV)对该电极表面进行了表征。在pH 3.0时,循环伏安图显示Cu修饰层存在一对氧化还原峰,其峰电位分别为Vp1a=246 mV,Vp1c=101 mV(vs.SCE)。它的表面电子转移系数α为0.52,速率常数Ks=0.04 s-1,表面覆盖度Γ=1.2×10-10mol/cm2,属于单分子层吸附。在pH 2.0~5.0的NaAc底液中,该电极对NO的还原有催化作用,pH 3.0时NO的还原过电位为VpcⅡ=-672 mV,较在裸电极上(-1.1V)降低了约600 mV,采用示差脉冲伏安法(DPV)测定催化电流与NO的浓度在3.1×10-9~4.7×10-8mol/L范围内呈良好的线性关系。NO催化还原过程的异相电子转移速率常数为3.12×10-3cm/s。     

聚苯胺/钴-氧化钴膜作传感元件的pH传感器的性能

研究了在玻碳电极上修饰不同物质所制得的pH传感器,通过电位滴定的方法比较得出先修饰聚苯胺,再修饰钴-氧化钴膜的电极对pH有较好的响应,能代替玻璃电极应用在实际样品测定中. 探究了最佳修饰条件为:先在0.1 mol/L苯胺的盐酸(1 mol/L)溶液中, 电位范围为-0.2～1.0 V,以100 mV/s 的扫描速率循环伏安扫描10圈修饰聚苯胺膜;接着在含2.0×10-4 mol/L Co2+的磷酸盐缓冲溶液(PBS)(pH=7.5)中,电位范围为-1.2～1.2 V,以100 mV/s的扫描速率循环伏安扫描 5圈修饰钴-氧化钴膜. 得到的修饰电极响应斜率为-61.60 mV/pH,响应范围pH值为0.5～13.     

天青I修饰电极的电化学性质及对血红蛋白的电催化还原

天青I修饰电极在pH=5.5的HAc-NaAc缓冲溶液中,在0.3～-0.7V电位范围内表现出可逆的氧化还原行为,其表面式量电位E^0'=-0.21V,表观电极反应速率常数k_s'=0.69s^-1,该电极对血红蛋白的还原过程具有良好的催化作用。实验结果表明,由电沉积构成的修饰电极较吸附法制备的修饰电极具有更好的稳定性。     

离子液体中Au(111)和Pt(111)表面Ge欠电位沉积的现场STM研究

本文研究BMIPF₆离子液体中Au(111)和Pt(111)表面Ge的电沉积行为. 循环伏安法测试结果表明,在含0.1 mol·L^-1 GeCl₄的BMIPF₆溶液Au(111)和Pt(111)表面均有两个与Ge沉积过程相关的还原峰. 第一个还原峰包含了Ge⁴⁺还原成Ge²⁺及Ge的欠电位沉积,第二个还原峰对应Ge的本体沉积. 现场扫描隧道显微镜研究结果表明,Ge在Au(111)和Pt(111)表面均有两层欠电位沉积. 第一层欠电位沉积厚度约为0.25 nm、形貌平整、带有缝隙的亚单层结构. 第二层欠电位沉积形貌相对粗糙的点状团簇结构. 该欠电位沉积过程伴随表面合金化.     

Pb deposition on I-coated Au(111). UHV-EC and EC-STM studies

This article concerns the growth of an atomic layer of Pb on the Au(111)( radical3 x radical3)R30 degrees -I structure. The importance of this study lies in the use of Pb underpotential deposition (UPD) as a sacrificial layer in surface-limited redox replacement (SLRR). SLRR reactions are being applied in the formation of metal nanofilms via electrochemical atomic layer deposition (ALD). Pb UPD is a surface-limited reaction, and if it is placed in a solution of ions of a more noble metal, redox replacement can occur, but limited by the amount of Pb present. Pb UPD is a candidate for use as a sacrificial layer for replacement by any more noble element. It has been used by this group for both Cu and Pt nanofilm formation using electrochemical ALD. The I atom layer was intended to facilitate electrochemical annealing during nanofilm growth. Two distinctly different Pb atomic layer structures are reported, studied using in situ scanning tunneling microscopy (STM) with an electrochemical flow cell and ultrahigh vacuum surface analysis combined directly with electrochemical reactions (UHV-EC). Starting with the initial Au(111)( radical3 x radical3)R30 degrees -I, 1/3 monolayer of I on the Au(111) surface, Pb deposition began at approximately 0.1 V. The first Pb UPD structure was observed just below -0.2 V and displayed a (2 x radical3)-rect unit cell, for a structure composed of 1/4 monolayer each of Pb and I. The I atoms fit in Pb 4-fold sites, on the Au(111) surface. The structure was present in domains rotated by 120 degrees. Deposition to -0.4 V resulted in complete loss of the I atoms and formation of a Pb monolayer on the Au(111), which produced a Moiré pattern, due to the Pb and Au lattice mismatch. These structures represent two well-defined starting points for the growth of nanofilms of other more noble elements. It is apparent from these studies that the adsorption of I- on Pb is weak, and it will rinse away. If Pb is used as a sacrificial metal in an electrochemical ALD cycle and adsorbed I atoms are employed for electrochemical annealing, I atoms will need to be applied each cycle.     

Electrochemical Designing of Au/Pt Core Shell Nanoparticles as Nanostructured Catalyst with Tunable Activity for Oxygen Reduction

Au/Pt core shell nanoparticles (NPs) have been prepared via a layer‐by‐layer growth of Pt layers on Au NPs using underpotential deposition (UPD) redox replacement technique. A single UPD Cu monolayer replacement with Pt(II) yielded a uniform Pt film on Au NPs, and the shell thickness can be tuned by controlling the number of UPD redox replacement cycles. Oxygen reduction reaction (ORR) in air‐saturated 0.1 M H₂SO₄ was used to investigate the electrocatalytic behavior of the as‐prepared core shell NPs. Cyclic voltammograms of ORR show that the peak potentials shift positively from 0.32 V to 0.48 V with the number of Pt layers increasing from one to five, suggesting the electrocatalytic activity increases with increasing the thickness of Pt shell. The increase in electrocatalytic activity may originate mostly from the large decrease of electronic influence of Au cores on surface Pt atoms. Rotating ring‐disk electrode voltammetry and rotating disk electrode voltammetry demonstrate that ORR is mainly a four‐electron reduction on the as‐prepared modified electrode with 5 Pt layers and first charge transfer is the rate‐determining step.     

Copper UPD on Selenium-Modified Polycrystalline Pt Electrode

Underpotential deposition of Cu onto an Se-modified smooth polycrystalline Pt electrode in an acidic CuSO₄ solution was investigated using a cyclic voltammetry. It was obtained that the specific voltammetric pattern of Cu UPD observed for a clean Pt electrode disappeared and a new current peak at potentials much closer to bulk Cu deposition was formed. This feature of a cyclic voltammogram is similar to that observed earlier for clean Pt electrode in acidic CuSO₄ solutions containing selenite and also to that described for S-modified Pt electrode in an additive-free CuSO₄ solution. The reasons for the difference in the voltammetric behavior of bare Pt and Se-modified Pt in the potential range characteristic of Cu UPD were considered. A model of Cu deposition taking place onto the free Pt sites at more positive potentials and onto the Se-covered ones at less positive potentials was discussed with closer scrutiny.     

In situ STM imaging of bis-3-sodiumsulfopropyl-disulfide molecules adsorbed on copper film electrodeposited on Pt(111) single crystal electrode

The adsorption of bis-3-sodiumsulfopropyldi-sulfide (SPS) on metal electrodes in chloride-containing media has been intensively studied to unveil its accelerating effect on Cu electrodeposition. Molecular resolution scanning tunneling microscopy (STM) imaging technique was used in this study to explore the adsorption and decomposition of SPS molecules concurring with the electrodeposition of copper on an ordered Pt(111) electrode in 0.1 M HClO(4) + 1 mM Cu(ClO(4))(2) + 1 mM KCl. Depending on the potential of Pt(111), SPS molecules could react, adsorb, and decompose at chloride-capped Cu films. A submonolayer of Cu adatoms classified as the underpotential deposition (UPD) layer at 0.4 V (vs Ag/AgCl) was completely displaced by SPS molecules, possibly occurring via RSSR (SPS) + Cl-Cu-Pt → RS(-)-Pt(+) + RS(-) (MPS) + Cu(2+) + Cl(-), where MPS is 3-mercaptopropanesulfonate. By contrast, at 0.2 V, where a full monolayer of Cu was presumed to be deposited, SPS molecules were adsorbed in local (4 × 4) structures at the lower ends of step ledges. Bulk Cu deposition driven by a small overpotential (η < 50 mV) proceeded slowly to yield an atomically smooth Cu deposit at the very beginning (<5 layers). On a bilayer Cu deposit, the chloride adlayer was still adsorbed to afford SPS admolecules arranged in a unique 1D striped phase. SPS molecules could decompose into MPS upon further Cu deposition, as a (2 × 2)-MPS structure was observed with prolonged in situ STM imaging. It was possible to visualize either SPS admolecules in the upper plane or chloride adlayer sitting underneath upon switching the imaging conditions. Overall, this study established a MPS molecular film adsorbed to the chloride adlayer sitting atop the Cu deposit.     

CdTe electrodeposition on InP(100) via electrochemical atomic layer epitaxy (EC-ALE): studies using UHV-EC

The II-VI compound semiconductor CdTe was electrodeposited on InP(100) surfaces using electrochemical atomic layer epitaxy (EC-ALE). CdTe was deposited on a Te-modified InP(100) surface using this atomic layer by atomic layer methodology. The deposit started with formation of an atomic layer of Te on the InP(100) surface, as Cd was observed not to form an underpotential deposition (UPD) layer on InP(100), although it was found to UPD on Te atomic layers. On the In-terminated 'clean' InP(100) surface, Te was deposited at -0.80 V from a 0.1 mM solution of TeO2, resulting in formation of a Te atomic layer and some small amount of bulk Te. The excess bulk Te was then removed by reduction in blank solution at -0.90 V, leaving a Te atomic layer. Given the presences of the Te atomic layer, it was then possible to form an atomic layer of Cd by UPD at -0.58 V to complete the formation of a CdTe monolayer by EC-ALE. That cycle was then repeated to demonstrate the applicability of the cycle to the formation of CdTe nanofilms. Auger spectra recorded after the first three cycles of CdTe deposition on InP(100) were consistent with the layer-by-layer CdTe growth. It is interesting to note that Cd did not form a UPD deposit on the In-terminated InP(100) surface and only formed Cd clusters at an overpotential. This issue is probably related to the inability of the Cd and In to form a stable surface compound.     

Underpotential deposition studies of copper on glassy carbon

Studies on the deposition and dissolution of copper from 0·5 M sulphuric acid solutions onto glassy carbon (GC) using potential sweep techniques indicated that an additional peak occurs at higher positive potentials than the bulk stripping peak. This peak is identified as due to the stripping of underpotential deposited (UPD) copper. Results of investigations on the effect of sweep rate, deposition potential and time of deposition on the peak characteristics of UPD and bulk deposited copper are also reported.     

Understanding the copper underpotential deposition process at strained gold surface

Copper underpotential deposition (UPD) on a gold surface is investigated by cyclic voltammetry coupled with in situ cyclic strain to understand the strain-modulated electrodeposition. Our work emphasizes quantification of an electrocapillary coupling coefficient ς, which relates the response of Cu electrodeposition potential, E, to applied strain, ε. The different responses to the strain are observed at two Cu UPD stages. The data indicate that tensile strain could enhance the formation of a Cu monolayer on the Au surface. The typical electrodeposition process could be modulated by an external mechanical strain.     

Open circuit stability of underpotentially deposited Pb monolayer on Cu(1 1 1)

The stability of underpotentially deposited (UPD) Pb layer on Cu(1 1 1) is investigated by conventional electrochemical techniques in perchlorate solution at open circuit potential (OCP). In situ scanning tunneling microscopy (STM) is employed to monitor and ascertain structural and morphological changes at characteristic potentials. A corrosion-like mechanism associated with UPD layer stripping powered by reduction processes is found to operate in the system of interest in absence of potential control. OCP transients suggest strong dependence of the Pb layer stability upon the concentration of oxidizing agents, such as oxygen and/or nitrate ions, present in the solution. It is found that the increase of the oxidizing agent concentration results in a proportional decrease of the Pb UPD layer stripping time at OCP. The concentration of the dissolved oxygen is found to affect the UPD layer behavior in the entire range of underpotentials in accordance with the strong affinity of the Pb²⁺/Cu(1 1 1) system to the oxygen reduction reaction (ORR). In contrast to oxygen, nitrate ions appear to play active role only in the potential range positive to the UPD peaks where mostly bare Cu surface is in contact with the solution. Specifically adsorbing Cl⁻ ions are examined as a possible inhibitor of the reduction processes operating in the Pb underpotential range. Concentrations of Cl⁻ ions as low as 1 × 10⁻⁴ M are found to stabilize the Pb UPD layer by a factor of 2.5.     

Electrochemical atomic layer epitaxy (ECALE)

Electrodeposition holds promise as a low cost, flexible room temperature technique for the production of II-VI compound semiconductors. Previous studies, however, have resulted in the production of polycrystalline deposits in every case. This paper describes a new method, developed in this laboratory, for depositing these materials epitaxially. The method involves the alternate deposition of the component elements a monolayer at a time. To limit deposition to a monolayer, underpotential deposition (UPD) is employed. UPD occurs because of the enhanced stability provided by bond formation between the II and VI elements, relative to formation of bulk elemental deposits. This method is the electrochemical equivalent of atomic layer epitaxy (ALE), and is thus referred to as “electrochemical atomic layer epitaxy” (ECALE). This paper describes the first example of the ECALE method, involving the thin-layer electrodeposition of CdTe on a Au polycrystalline electrode.