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1.
研究了压电双材料界面钝裂纹附近螺型位错的屏蔽效应与发射条件.应用保角变换技术,得到了复势函数与应力场的封闭形式解,讨论了位错方位、双材料电弹常数及裂纹钝化程度对位错屏蔽效应和发射条件的影响.结果表明,Burgers矢量为正的螺型位错可以降低界面钝裂纹尖端的应力强度因子(屏蔽效应),屏蔽效应随位错方位角及位错与裂纹尖端距离的增大而减弱,压电双材料中螺型位错对裂纹的屏蔽效应强于相应弹性双材料中螺型位错对裂纹的屏蔽效应;位错发射所需的临界无穷远加载或电位移随位错方位角及裂纹钝化程度的增加而增大;最可能的位错发射角度为零度即位错最可能沿裂纹前方发射.论文解答的特殊情况与已有文献一致.  相似文献   

2.
研究了多晶体材料中螺型位错偶极子和界面裂纹的弹性干涉作用.利用复变函数方法,得到了该问题复势函数的封闭形式解答.求出了由位错偶极子诱导的应力场和裂纹尖端应力强度应子,分析了偶极子的方向,偶臂和位置以及材料失配对应力强度因子的影响.推导了作用在螺型位错偶极子中心的像力和力偶矩,并讨论了界面裂纹几何条件和不同材料特征组合对位错偶极子平衡位置的影响规律.结果表明,裂纹尖端的螺型位错偶极子对应力强度因子会产生强烈的屏蔽或反屏蔽效应.同时,界面裂纹对螺型位错偶极子在材料中运动有很强的扰动作用.  相似文献   

3.
研究了穿透圆形夹杂界面的半无限楔形裂纹与裂纹尖端螺型位错的干涉问题.应用复变函数解析延拓技术与奇性主部分析方法,得到了位错位于半圆形夹杂内部时,半无限基体和半圆形夹杂内复势函数的解析解.然后利用保角映射技术得到了穿透圆形夹杂界面的半无限楔形裂纹尖端螺型位错产生的应力场以及作用在位错上的位错力的解析表达式.主要讨论了螺型位错对裂纹的屏蔽效应以及从楔形裂纹尖端发射位错的临界载荷条件.研究结果表明正的螺型位错可以削弱楔形裂纹尖端的应力强度因子,屏蔽裂纹的扩展,屏蔽效应随位错方位角的增大而减小.位错发射所需的无穷远临界应力随发射角的增加而增大,最可能的位错发射角度为零度,直线裂纹尖端位错的发射比楔形裂纹尖端位错的发射更容易,硬基体抑制位错的发射.  相似文献   

4.
运用弹性力学的复势方法,研究了纵向剪切下增强相/夹杂内螺型位错偶极了与含共焦钝裂纹椭圆夹杂的干涉效应,得到了该问题复势函数的封闭形式解答,由此推导出了夹杂区域的应力场、作用在螺型位错偶极子中心的像力和像力偶矩以及裂纹尖端应力强度因子的级数形式解.并分析了位错偶极子倾角ψ、钝裂纹尺寸和材料常数对位错像力、像力偶矩以及应力强度因子的影响.数值计算结果表明:位错像力、像力偶矩以及应力强度因子均随位错偶极子倾角做周期变化;夹杂内部的椭圆钝裂纹明显增强了硬基体对位错的排斥,减弱了软基体对位错的吸引,且对于硬夹杂,位错出现了一个不稳定平衡位置,该平衡位置随钝裂纹曲率的增大不断向界面靠近;变化ψ值将出现改变位错偶极子对应力强度因子作用方向的临界值.  相似文献   

5.
研究位于基体或夹杂中任意点的压电螺型位错与含界面裂纹圆形涂层夹杂的电弹耦合干 涉问题. 运用复变函数方法,获得了基体,涂层和夹杂中复势函数的一般解答. 典型例 子给出了界面含有一条裂纹时,复势函数的精确级数形式解. 基于已获得的复势函数和广 义Peach-Koehler公式,计算了作用在位错上的像力. 讨论了裂纹几何条件,涂层厚度和材 料特性对位错平衡位置的影响规律. 结果表明,界面裂纹对涂层夹杂附近的位错运动有很大 的影响效应,含界面裂纹涂层夹杂对位错的捕获能力强于完整粘结情况;并发现界面裂纹长 度和涂层材料常数达到某一个临界值时可以改变像力的方向. 解答的特殊情形包含了以 往文献的几个结果.  相似文献   

6.
关于准晶中螺型位错偶极子与直线纳米裂纹干涉效应的问题,提出了一种可获得精确解的新方法。首先,将Gurtin-Murdoch表/界面理论推广运用到准晶材料中的纳米裂纹问题,建立了裂纹表面上含声子场、相位子场的应力边界模型;然后,利用复变函数中的共形映射方法,将直线裂纹问题化为单位圆孔问题;再借助于柯西积分方法获得了问题的封闭解;最后,数值结果表明:当裂纹的尺寸减小到纳米量级时,表面效应将对声子场和相位子场中的应力场、像力及像力偶矩产生显著的影响,从而改变其力学性能,即裂纹尺寸越小,表面效应越强,声子场和相位子场中的应力场、像力及像力偶矩的数值变化越大;螺型位错偶极子力偶臂的方向对像力的极值和自身平衡亦有较大影响。  相似文献   

7.
压电螺型位错和共线界面刚性线夹杂的干涉效应   总被引:1,自引:1,他引:1  
研究了压电材料中压电螺型位错和共线界面导电刚性线夹杂的电弹干涉效应.运用复变函数解析延拓技术与奇性主部分析方法,获得了该问题的一般解答.作为算例,求出了界面含一条刚性线夹杂时两种压电介质区域广义应力函数的封闭形式解.导出了作用在位错上的像力和刚性线夹杂表面剪应力和电位移的解析表达式.讨论了界面刚性线长度,两种材料的剪切模量比和压电系数比对位错力和刚性线表面剪应力的影响规律.为进一步研究该类问题提供了一个基本解.  相似文献   

8.
研究了纳米尺度圆环形涂层(界面层)中螺型位错与圆形夹杂以及无限大基体材料的干涉效应.涂层与夹杂的界面和涂层与基体的界面均考虑界面应力效应.运用复势方法,获得了三个区域复势函数的解析解答.利用求得的应力场和Peach-Koehler公式,得到了作用在螺型位错上位错力的精确表达式.主要讨论了界面应力对涂层(界面层)中螺型位错运动和平衡稳定的影响规律.结果表明,界面应力对界面附近位错的运动有大的影响,由于界面应力的存在,可以改变涂层内位错与夹杂/基体干涉的引斥规律,并使位错在涂层内部产生三个稳定或非稳定的平衡点.考虑界面效应后,有一个额外的排斥力或吸引力作用在位错上,使原有的位错力增加或减小.  相似文献   

9.
本文重点研究螺型住错偶极子和圆形夹杂界面刚性线的弹性干涉效应。利用复变函数方法,得到了该问题的一般解;此外还求出了只含一条界面刚性线时的封闭解答,得到了刚性线尖端的应力强度因子以及作用在螺型位错偶板子中心的像力和像力偶矩。研究结果表明:位错偶板子对应力强度因子具有很强的屏蔽或反屏蔽效应;软夹杂吸引位错偶极子,而刚性线排斥位错偶板子,在一定条件下,位错偶极子在刚性线附近出现一个平衡位置;当刚性线的长度争材料剪切模量比达到临界值时,可以改变偶极子和界面之间的干涉机理;刚性线长度对位错偶极子中心像力偶矩也有很大的影响。  相似文献   

10.
研究了含非完整界面圆形涂层夹杂内部一个螺型位错在夹杂、涂层与无限大基体材料中产生的弹性场.运用复变函数函数方法,获得了三个区域复势函数的解析解答.利用求得的应力场和Peach-Koehler公式,得到了作用在螺型位错上位错力的精确表达式.主要讨论了两个非完整界面对位错力的影响规律.结果表明,涂层界面对夹杂内部螺型位错的吸引力随着界面粘结强度的弱化而变大.界面非完整程度增加削弱材料弹性失配对位错力的影响.在一定条件下,非完整界面可以改变夹杂内位错与涂层/基体系统之间的引斥干涉规律,并使位错在夹杂内部产生一个稳定或非稳定的平衡点.  相似文献   

11.
A piezoelectric screw dislocation in the matrix interacting with a circular inhomogeneity with interfacial cracks under antiplane shear and in-plane electric loading at infinity was dealt with. Using complex variable method, a general solution to the problem was presented. For a typical case, the closed form expressions of complex potentials in the inhomogeneity and the matrix regions and derived explicitly when the interface containsthe electroelastic field intensity factors weresingle crack. The image force acting on the piezoelectric screw dislocation was calculated by using the perturbation technique and the generalized Peach-Koehler formula. As a result, numerical analysis and discussion show that the perturbation influence of the interfacial crack on the interaction effects of the dislocation and the inhomogeneity is significant which indicates the presence of the interfacial crack will change the interaction mechanism when the length of the crack goes up to a critical value. It is also shown that soft inhomogeneity can repel the dislocation due to their intrinsic electromechanical coupling behavior.  相似文献   

12.
The electroelastic interaction between a piezoelectric screw dislocation and an elliptical inhomogeneity containing a confocal blunt crack under infinite longitudinal shear and in-plane electric field is investigated. Using the sectionally holomorphic function theory, Cauchy singular integral, singularity analysis of complex functions and theory of Rieman boundary problem, the explicit series solution of stress field is obtained when the screw dislocation is located in inhomogeneity. The intervention law of the interaction between blunt crack and screw dislocation in inhomogeneity is discussed. The analytical expressions of generalized stress and strain field of inhomogeneity are calculated, while the image force, field intensity factors of blunt crack are also presented. Moreover, a new matrix expression of the energy release rate and generalized strain energy density (SED) are deduced. With the size variation of blunt crack, the results can be reduced to the case of the interaction between a piezoelectric screw dislocation and a line crack in inhomogeneity. Numerical analysis are then conducted to reveal the effects of the dislocation location, the size of inhomogeneity and blunt crack and the applied load on the image force, energy release rate and strain energy density. The influence of dislocation on energy release rate and strain energy density is also revealed.  相似文献   

13.
The heat dipole consists of a heat source and a heat sink. The problem of an interracial crack of a composite containing a circular inclusion under a heat dipole is investigated by using the analytical extension technique, the generalized Liouville theorem, and the Muskhelishvili boundary value theory. Temperature and stress fields are formulated. The effects of the temperature field and the inhomogeneity on the interracial fracture axe analyzed. As a numerical illustration, the thermal stress intensity factors of the interfacial crack are presented for various material combinations and different positions of the heat dipole. The characteristics of the interfacial crack depend on the elasticity, the thermal property of the composite, and the condition of the dipole.  相似文献   

14.
IntroductionPiezoelectric materials have potentials for use in many modern devices and compositestructures. The presence of various defects, such as inclusions, holes, dislocations andcracks, can greatly influence their characteristics and coupled behavio…  相似文献   

15.
This work deals with the influence of Kelvin-type viscoelastic interface on the generation of screw dislocations near the interfacial blunt crack tip in light of a pair of concentrated loads. The stress fields for dislocation and concentrated load have been obtained by using the integral transform and conformal mapping, the stress intensity factor have been studied, the image force acting on dislocation has been analyzed. The region rb where n screw dislocations are generated by a pair of concentrated loads and dislocation number are obtained by displacement compatibility and stress compatibility conditions of self-consistent and self-equilibrated systems. The results show that: the force acting on dislocation starts with the value that a perfectly bonded interface, then with relaxation of the imperfect interface; the shield effect for dislocation decreases as time goes by; in addition, with time elapsing, the influence of material shear modulus rate on shielding effect becomes weaker and weaker. The scale of multiplier α(rb/a) increases with relaxation of imperfect interface, the larger ratio of crack geometry c/a and the smaller ratio of shear modulus μ1/μ2 will lead the higher scale of multiplier. When μ1/μ2 = 1, the screw dislocations number first increases and then decreases with relaxation of imperfect interface, In addition, it possesses the highest value at t0 ≈ 1 and tends to vanish at t0 = ∞. When μ1 < μ2, the screw dislocations number increases with relaxation of imperfect interface. When μ1 > μ2, the screw dislocations number first increases then decreases with relaxation of imperfect interface, and possesses the highest value at t0 ≈ 1, the negative value are exclude from the discussion.  相似文献   

16.
The interaction of a screw dislocation with an interfacial edge crack in a two-phase piezoelectric medium is investigated. Closed-form solutions of the elastic and electrical fields induced by the screw dislocation are derived using the conformal mapping method in conjunction with the image principle. Based on the electroelastic fields derived, the stress and electric displacement intensity factors, the image force acting on the dislocation are given explicitly. We find that the stress and electric displacement intensity factors depend on the effective electroelastic material constants. In the case where one of two phases is purely elastic, the stress intensity factor and image force are plotted to illustrate the influences of electromechanical coupling effect, the position of the dislocation and the material properties on the interaction mechanism. The project supported by the Doctoral Foundation of Hebei Province (B2003113)  相似文献   

17.
The heat dipole consists of a heat source and a heat sink. The problem of an interfacial crack of a composite containing a circular inclusion under a heat dipole is investigated by using the analytical extension technique, the generalized Liouville theo-rem, and the Muskhelishvili boundary value theory. Temperature and stress fields are formulated. The effects of the temperature field and the inhomogeneity on the interracial fracture are analyzed. As a numerical illustration, the thermal stress intensity factors of the interfacial crack are presented for various material combinations and different po-sitions of the heat dipole. The characteristics of the interfacial crack depend on the elasticity, the thermal property of the composite, and the condition of the dipole.  相似文献   

18.
The interaction between a screw dislocation and an elliptical hole with two asymmetrical cracks in a one-dimensional(1 D) hexagonal quasicrystal with piezoelectric effect is considered. A general formula of the generalized stress field, the field intensity factor, and the image force is derived, and the special cases are discussed. Several numerical examples are given to show the effects of the material properties and the dislocation position on the field intensity factors and the image forces.  相似文献   

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