Pd在p型单晶硅(100)表面自催化化学沉积

研究了Pd在氢终止的p型单晶硅(100)表面的自催化化学沉积(AED). 在室温下将刻蚀过的硅片浸入常规的HF-PdCl2-HCl溶液制备了Pd膜. 将沉积了Pd的基底作为工作电极, 用循环伏安法(CV)、原子力显微镜(AFM)和X射线光电子能谱(XPS)研究了Pd膜的阳极溶出行为和形貌. 结果表明, Pd的生长遵循Volmer-Weber (VW)生长模式, Pd膜给出了很好的支持.     

Er-Bi合金膜在有机溶剂中的电沉积研究

利用循环伏安法和恒电位电解法探讨了室温条件下在二甲基亚砜(DMSO)中Er-Bi合金膜的电化学制备.研究了沉积电位、电流密度以及主盐浓度比对沉积膜质量的影响.实验结果表明,在ErCl3-Bi(NO3)3-LiCl-DMSO体系中,当控制恰当的体系组成和沉积条件,均可得到表面均匀、附着力强、有金属光泽的灰黑色非晶态Er-Bi合金膜,其中稀土Er的质量分数可达24.09％～46.56％.通过SEM、EDS分析得到沉积膜表面形貌和组成,通过XRD和DSC确定了合金膜的物相组成.结果表明,当所制备的合金膜在723 K进行热处理1 h后,可形成稳定的Er-Bi合金相.     

电沉积二氧化钛纳米微粒膜的光电化学性能和表面形貌研究

采用光电流谱、透射光谱和扫描微探针显微镜技术对电沉积法制备的二氧化钛纳米微粒膜的光电化学性能和表面形貌进行了研究.结果表明,不同制备条件下的二氧化钛纳米微粒膜具有与紧密的半导体电极不同的光电化学性质,并探讨了其光电化学性能与表面形貌的关系.     

照相明胶层中金催化的无电沉积的正电子湮没研究

采用正电子湮没技术(PAT)研究了照相明胶中的自由体积空穴在无电沉积过程中的作用机理。研究结果表明,活化饱和后,照相明胶的自由体积空穴的平均尺寸约减小0.011nm³,相当于一个Au原子的体积的大小,即照相明胶大分子中的每个自由体积空穴平均被填充了一个Au原子,该Au原子作为催化活性核催化铜的沉积,使物理显影生成的影像为紧密铜粒子的堆积形貌,而不是丝状形貌。铜经无电沉积饱和后,照相明胶的自由体积空穴的平均大小约减小了0.020nm³,即照相明胶的自由体积空穴对铜物理显影过程中铜的沉积没有阻碍作用,铜无电沉积近似为各向同性的球状堆积。     

离子液体中Au(111)和Pt(111)表面Ge欠电位沉积的现场STM研究

本文研究BMIPF₆离子液体中Au(111)和Pt(111)表面Ge的电沉积行为. 循环伏安法测试结果表明,在含0.1 mol·L^-1 GeCl₄的BMIPF₆溶液Au(111)和Pt(111)表面均有两个与Ge沉积过程相关的还原峰. 第一个还原峰包含了Ge⁴⁺还原成Ge²⁺及Ge的欠电位沉积,第二个还原峰对应Ge的本体沉积. 现场扫描隧道显微镜研究结果表明,Ge在Au(111)和Pt(111)表面均有两层欠电位沉积. 第一层欠电位沉积厚度约为0.25 nm、形貌平整、带有缝隙的亚单层结构. 第二层欠电位沉积形貌相对粗糙的点状团簇结构. 该欠电位沉积过程伴随表面合金化.     

电沉积表面修饰对染料敏化太阳电池微观性能影响机理研究

为了改善染料敏化太阳电池内电子的传输复合过程, 研究者尝试不同方法制备或改性TiO₂薄膜. 对TiO₂薄膜进行后处理, 在其表面引入一层小颗粒层, 是一种有效的方法并被广泛研究. 通过对TiO₂薄膜不同时间的电沉积表面修饰, 细致研究了表面修饰后染料敏化太阳电池微观性能的变化机制. 采用阳极氧化法在TiCl₃水溶液中对TiO₂薄膜进行电沉积后处理, 将溶液pH值调至2.2, 装置的反应速率由恒电位仪控制. 不同沉积时间电池带边移动以及电子传输复合的动力学过程, 借助强度调制光电流谱(IMPS)/强度调制光电压谱(IMVS)和电化学阻抗谱(EIS)等探测技术表征. 研究表明, 电沉积在TiO₂薄膜表面引入了大量浅能级陷阱态, 以致电势较高时电容随沉积时间延长增加明显. 不同时间的电沉积表面修饰在TiO₂薄膜表面形成了新的小颗粒层并改善了TiO₂颗粒间接触, 在改善电子注入及收集过程的同时, 也有效抑制了内部电子复合. IMPS/IMVS结果表明, 电沉积对动力学过程改善的效果受光强影响明显, 弱光下作用更为突出. 此外, 电池开路电压主要受带边移动及内部复合变化影响, 随沉积时间延长, 表面电荷的增多使TiO₂薄膜带边逐渐正移, 有效改善了光电流却限制了开路电压的提升. 在适合的电沉积时间下, 电沉积表面修饰可以同时改善光电流和光电压.     

银在玻碳旋转圆盘电极表面的化学镀分离研究

以水合肼为还原剂,在2.25 mol/L NH3-0.56 mol/L HAe(pH 10～10.5)的基本镀浴中,用化学镀方法将镀浴中的微量Ag 离子选择性地沉积于玻碳旋转圆盘电极表面,从而将Ag 与其它共存金属离子分离.用开路电位-时问谱技术(OCP-t)、循环伏安法(CV)和微分脉冲伏安法(DPASV)表征了该化学镀分离银的机理和效果.证明在多种金属离子和常见阴离子共存的复杂溶液体系中,可将银进行有效分离;电极表面化学镀富集银量的OCP-t曲线与镀浴中还原剂NH2NH2的浓度在0.1～1.5mol/L范围内有线性关系;而CV法溶出峰电量与镀浴中Ag 浓度在1～10 mmoL/L范围内呈线性关系.电极表面富集的银溶出峰电流与Ag 浓度在6～20μmol/范围内有很好的线性关系.该方法已应用于粗铅样中银的还原、分离和测定,分析结果与电感耦合等离子体发射光谱法(ICP/AES)基本一致.     

Ag活化的p型硅(111)表面化学镀Ag膜表面形貌研究

A method of electroless silver deposition on silver activated p-type silicon（111） wafer was proposed. The silver seed layer was deposited firstly on the wafer in the solution of 0.005 mol/L AgNO3 ＋0.06 mol/L HE Then the silver film was electrolessly deposited on the seed layer in the electroless bath of AgNO3＋NH3＋acetic acid＋NH2NH2 （pH 10.2）. The morphology of the seed layer and the silver films prepared under the condition of the different bath composition was compared by atomic force microscopy. The reflectance of the silver films with different thickness was characterized by Fourier transform infrared spectrometry. The experimental results indicate that the seed layer possesses excellent catalytic activity toward electroless silver deposition and rotating of the silicon wafer during the electroless silver deposition could lead to formation of the smoother silver film.     

硅电极/溶液界面开路电位-时间谱和原子力显微镜在化学镀Ag中的应用研究

用开路电位-时间谱技术,表征了在硅（100）表面化学镀银的硅电极/溶液界 面吸附态。所得结果与原子力显微镜在纳米尺寸上的面结构信息分析结果作了对比 。同时也将该结果与循环伏安法（CV）结果作了比较。证明当硅电极表面具有单层 吸附Ag~+离子、表面单层吸附Ag~+离子发生沉积反应、Ag~+离子发生本体沉积时的 开路电位-时间曲线有完全不同的特征。     

The influence of micro- and nanoparticles on model atomically flat surfaces on crystallization of polyethylene

Crystallization of high density polyethylene (PE) from the melt on model atomically flat solid surfaces decorated with micro- and nanoparticles of gold or NaCl of different size and densities is investigated. The morphology of the contact layer of PE after its detachment from the support is studied using atomic force microscopy (AFM). It is shown that the nucleating and ordering effect of the solid on PE crystallization depends to a large extend on the nanostructure of its surface, in particular on the size of the atomically flat domains and on the presence of nanoscopic obstacles. The minimum size of the flat domain which can significantly influence the PE crystallization is estimated to be of the order of 150 nm.     

Micro-contact printing of poly(3-hexylthiophene) on silicon oxide: Effect of stamp stretching

Micro-contact printing (μCP) has been applied to deposit poly(3-hexylthiophene) (P3HT) layer onto silicon oxide substrate from a polydimethylsiloxane (PDMS) stamp. The effect of the stamp stretching onto the corresponding printed P3HT layer has been analysed both from morphological (AFM) and from structural (XRD) points of view. Results show an orienting effect of the stretching towards the P3HT ultimate morphological units (i.e. fibrils) along the stretching direction. The influence of other variables involved in the deposition (substrate polarity/apolarity, mechanical pressure onto the stamp) have been studied and reported.     

带相反电荷高分子和表面活性剂复合物膜在空气/水界面上的特性

利用原子力显微镜技术、表面压松弛法对带相反电荷高分子和表面活性剂在气/水界面形成的界面复合物膜进行了特性研究.原子力显微镜研究结果表明,部分水解聚丙烯酰胺(HPAM)/十六烷基三甲基溴化铵(CTAB)所形成的界面复合物膜呈现出“团”状聚集体形貌.两性聚丙烯酰胺与CTAB形成的界面复合物膜呈现出“纤维丝”的聚集体形貌.亚相中盐的存在对界面复合物的形貌有很大影响.表面压松弛实验则进一步表明界面复合物膜形貌结构的变化对其膜稳定性有直接的影响.     

Studies on the Film Formation of Polysaccharide Based Furan-2-Carboxylic Acid Esters

Furan-2-carboxylic acid esters of xylan, cellulose, curdlan, dextran, and starch were synthesized and studied regarding their film formation abilities. The polysaccharide esters were utilized to prepare films of different appearance. To investigate supermolecular structures of the biopolymer derivatives, atomic force- and scanning electron microscopy were applied. The surface roughness and the macro-pore size and -distribution of the polysaccharide ester films were characterized. Starch furan-2-carboxylic acid ester (starch furoate) did not show film formation. In contrast, dextran furoates are very well suitable for the surface coating of inorganic compounds while the xylan-, cellulose-, and curdlan derivatives yield self-supporting films with different surface characteristics.     

Determination of Aluminum by Adsorptive Cathodic Stripping Voltammetry with 1,2‐Dihydroxyanthraquinone‐3‐Sulfonic Acid (DASA): Effect of Thin Mercury Film Electrode

An analytical technique for aluminum (Al) based upon the complexation reaction between Al and the ligand – DASA (1,2‐dihydroxy‐anthraquinone‐3‐sulfonic acid) has previously been implemented successfully at the hanging mercury drop electrode (HMDE). There are several advantages of using mercury film electrodes (TMFE) over the HMDE, particularly if disposal of mercury is of concern. The novelty of using TMFE for adsorptive cathodic stripping voltammetry (ACSV) of Al – DASA is demonstrated in this paper. The peak potential used for the detection of Al in this system was at ?1.15 V (vs. Ag/AgCl). The method produced a limit of detection (LOD) of 1 μM (n=5) and a linear working range of 1–20 μM Al. Atomic force microscopy methods were used to investigate the nature of the TMFE and its interaction with DASA. The mercury droplets on the TMFE have a limited volume and this may lead to overloading of the electrode at relatively low concentrations of DASA. Interferences from Fe, Ca, Zn and Mg were investigated with only Fe appearing to interfere with the Al‐DASA system. Two masking agents (o‐phenanthroline and 2,2′‐bipyridyl) were shown to be effective at preventing the Fe interference.     

Nucleation at three-phase junction lines: in situ atomic force microscopy of the electrochemical reduction of sub-micrometer size silver and mercury(I) halide crystals immobilized on solid electrodes

The electrochemical reduction of sub-micrometer size silver halide crystals immobilized on the surface of gold and platinum electrodes starts at the three-phase junction line where the three phases metal, silver halide and electrolyte solution meet. Following nucleation at this line the reaction advances within seconds on the surface of the silver halide crystals until the entire surface is covered with about 20 atomic layers of silver and the reduction is terminated. The silver layer can be oxidized anodically and the next layer of the silver halide crystals becomes accessible for further reduction. This sequence of reductions and oxidations can be repeated. The nucleation of silver at the three-phase junction line can be detected by atomic force microscopy (AFM) measurements when, after a short reduction pulse and dissolution of the remaining silver halide, a thin ring of silver is observed at the place where the three-phase junction line was situated. The entire scenario of electrochemical reduction of immobilized silver halide crystals depends on the crystal size. Large crystals (about 100 µm edge-length) immobilized on the surface of optically transparent indium tin oxide electrodes show the growing of silver whiskers on the crystal surface, similar to what is known for the reduction of silver halides with photographic developers. However, also in the case of the large crystals, the reduction starts at the three-phase junction line. The electrochemical reduction of immobilized sub-micrometer size crystals of Hg₂Cl₂ and Hg₂Br₂ starts also at the three-phase junction. In the case of gold electrodes the formation of liquid mercury is followed by the formation of a solid crystalline gold amalgam. In the case of platinum electrodes the liquid mercury wets the platinum surface but does not destroy it.