Analysis of the gain and luminescence properties of Si/Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>G<Subscript>x</Subscript>: Er/Si heterostructures produced by sublimation molecular-beam epitaxy in a gas phase

Si/Si_1?xGe_x: Er/Si structures grown by sublimation molecular-beam epitaxy (SMBE) in a gas phase are studied. These structures are considered possible structures for realizing a Si/Er-based laser. It is shown that SMBE in a gas phase can be applied to create effective light-emitting structures that generate an intense luminescence signal at a wavelength of 1.54 μm. The structures and chemical compositions of the Si/Si_1?xG_x: Er/Si structures, whose parameters are close to those calculated for creating laser-type structures, are examined, and their photoluminescence (PL) spectra and kinetics are studied at 4.2 and 77 K. It is shown that the fraction of Er³⁺ optically active centers in the Si_1?xG_x: Er layers thus grown reaches ～10% of the total erbium-impurity concentration. The optical gains in the active Si_1?xG_x: Er layers at x = 0.1 and 0.02 are estimated to be ～0.03 and ～0.2 cm^?1, respectively. The gain in structures of this type can be significantly increased via the intentional formation of isolated Er³⁺ optically active centers whose PL spectra have a characteristic fine structure.     

MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence

The technology and properties of light-emitting structures based on silicon layers doped by erbium during epitaxial MBE growth are studied. The epitaxial layer forming on substrates prepared from Czochralski-grown silicon becomes doped by oxygen and carbon impurities in the process. This permits simplification of the Si: Er layer doping by luminescence-activating impurities, thus eliminating the need to make a special capillary for introducing them into the growth chamber from the vapor phase. The photoluminescence spectra of all the structures studied at 78 K are dominated by an Er-containing center whose emission line peaks at 1.542 μm. The intensity of this line measured as a function of the substrate and erbium dopant source temperatures over the ranges 400–700°C and 740–800°C, respectively, exhibits maxima. The edge luminescence and the P line observed in the PL spectra are excited predominantly in the substrate. The erbium atom concentration in the epitaxial layers grown at a substrate temperature of 600°C was studied by Rutherford proton backscattering and exhibits an exponential dependence on the erbium source temperature with an activation energy of ～2.2 eV.     

Effect of the <Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">n</Emphasis> junction breakdown mechanism on the Er<Superscript>3+</Superscript> ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy

A series of Si: Er/Si light-emitting diode structures with a smoothly varying p-n junction breakdown mechanism, grown through sublimation molecular-beam epitaxy, is used to investigate the effect of the breakdown mechanism on the electroluminescence of the structures. The maximal intensity and excitation efficiency of room-temperature Er³⁺ ion electroluminescence are shown to be attained in diode structures with a mixed breakdown mechanism.     

Er离子注入的富硅SiO2MOS-LED的可见和红外电致发光特性

通过Er离子和Si离子注入并结合高温退火制备了Er掺杂的富硅SiO2薄膜以及ITO/SiON/富硅SiO2:Er/Si MOS结构电致发光器件.研究了富Si浓度的变化对Er3+离子掺杂的电致发光器件的发光性能和传导特性的影响.发现不同Si含量对Er3+离子的不同能级的电致发光会产生不同作用.在富Si量小于5％的条件下,...     

Erbium doping of crystalline and amorphous silicon for optoelectronic applications

Summary In this work we demonstrate that efficient light emission at 1.54 μm can be achieved when Er ions are incorporated into crystalline Si or in heavily oxygen-doped amorphous and polycrystalline Si films (SIPOS). We have found that temperature quenching of photo- and electroluminescence, which is the major limitation towards the achievement of room temperature luminescence, can be strongly reduced by codoping these films with oxygen. This impurity is already present in as-prepared SIPOS and it is introduced by ion-implantation in crystalline Si. Er luminescence is obtained under both optical and electrical excitation and we demonstrate that excitation occurs through a carrier-mediated process. Electrical excitation is obtained by incorporating Er in properly designed device structures. It is found that this excitation can occur both through the recombination of hole-electron pairs and through impact excitation of the Er ions by hot electrons. These two mechanisms have different efficiencies and impact excitation is shown to prevail at room temperature. These data are presented and possible future developments are discussed. Paper presented at the III INSEL (Incontro Nazionale sul Silicio Emettitore di Luce), Torino, 12–13 October 1995.     

Si-based materials and devices for light emission in silicon

We report on the fabrication and performances of extremely efficient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1.54 μm electroluminescence (EL) at 300 K with a 10% external quantum efficiency, comparable to that of standard light-emitting diodes using III–V semiconductors. Er excitation is caused by hot electrons impact and oxide wearout limits the reliability of the devices. Much more stable light-emitting MOS devices have been fabricated using Er-doped silicon rich oxide (SRO) films as gate dielectric. These devices show a high stability, with an external quantum efficiency reduced to 1%. In these devices, Er pumping occurs by energy transfer from the Si nanostructures to the rare-earth ions. Finally, we have also fabricated MOS structures with Tb- and Yb-doped SiO₂ which show room temperature EL at 540 nm (Tb) and 980 nm (Yb) with an external quantum efficiency of a 10% and 0.1%, respectively.     

Effect of hydrogen defects on nanocrystallite layers of Si solar cells by hydrogen implantation

The Si solar cells were irradiated with high energy hydrogen ions of 10, 30, 60 and 120?keV at the dose rate of 10¹⁷ H⁺ ions (proton)/cm². The structural, optical and electrical properties of the implanted samples and fabricated cells were studied. The implantation induced defects bringing structural changes before and after annealing was evidenced by the transmission electron microscopy. The Raman spectrum showed a change of crystalline to amorphous state at 480?cm^?1 when the sample was implanted by hydrogen ion of 30?keV energy. Formation of nanocrystallite layers were observed after annealing. The electroluminescence images showed that hydrogen-related defect centers were involved in the emission mechanism. The photoluminescence emission from the implanted cells was attributed to nanocrystallite layers. From current–voltage measurements, the conversion efficiencies of implanted Si solar cells were found lower than the un-implanted reference cell. The ion implantation did not passivate the defects rather acted as recombination centers.     

Erbium-doped Si nanocrystals: optical properties and electroluminescent devices

In the last decade, a strong effort has been devoted towards the achievement of efficient light emission from silicon. Among the different approaches, rare-earth doping and quantum confinement in Si nanostructures have shown great potentialities. In the present work, the synthesis and properties of low-dimensional silicon structures in SiO₂ will be analyzed. All of these structures present a strong room temperature optical emission, tunable in the visible by changing the crystal size. Moreover, Si nanocrystals (nc) embedded in SiO₂ together with Er ions show a strong coupling with the rare earth. Indeed each Si nc absorbs energy which is then preferentially transferred to the nearby Er ions. The signature of this interaction is the strong increase of the excitation cross section for an Er ion in the presence of Si nc with respect to a pure oxide host. We will show the properties of Er-doped Si nc embedded within Si/SiO₂ Fabry–Pérot microcavities. Very narrow, intense and highly directional luminescence peaks can be obtained. Moreover, the electroluminescence (EL) properties of Si nc and Er-doped Si nc in MOS devices are investigated. It is shown that an efficient carrier injection at low voltages and quite intense room temperature EL signals can be achieved, due to the sensitizing action of Si nc for the rare earth. These data will be presented and the impact on future applications discussed.     

Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO<Subscript>2</Subscript> layers

When amorphous silica is bombarded with energetic ions, various types of defects are created as a consequence of ion-solid interaction (oxygen deficient centers (ODC), non-bridging oxygen hole centers (NBOHC), E^′-centers, etc.). Luminescent peaks from oxygen deficiency centers at 2.7 eV, non-bridging oxygen hole centers at 1.9 eV and defect centers with emission at 2.07 eV were observed by changing the concentration of implanted Gd³⁺ ions. Charge trapping in Gd-implanted SiO₂ layers was induced using constant current electron injection to study the electroluminescence intensity with dependence on the applied voltage change. The process of electron trap generation during high field carrier injection results in an increase of the electroluminescence from non-bridging oxygen hole centers. Direct correlation between electron trapping and the quenching of the electroluminescence at 2.07 eV and 2.7 eV was observed with variation of the implanted Gd concentration. PACS 78.60.i; 72.20.Jv; 78.20.-e     

Au/(SiO2/Si/SiO2)纳米双势垒/n+-Si结构的电致发光研究

利用射频磁控溅射方法,在n⁺-Si衬底上淀积SiO₂/Si/SiO_{2纳米双势垒单势阱结构,其中Si层厚度为2至4nm,间隔为0.2nm,邻近n⁺-S i衬底的SiO2层厚度固定为1.5nm,另一SiO2层厚度固定为3nm.为了 对比研究,还制备了Si层厚度为零的结构,即SiO2(4.5nm)/n⁺-Si 结构.在经过600℃氮气下退火30min,正面蒸上半透明Au膜,背面也蒸Au作欧姆接触后,所 有样品都在反向偏置(n^＋-Si的电压高于Au电极的电压)下发光,而在正向偏压 下不发光.在一定的反向偏置下,电流和电致发光强度都随Si层厚度的增加而同步振荡,位 相相同.所有样品的电致发光谱都可分解为相对高度不等的中心位于2.26eV(550nm)和1.85eV (670nm)两个高斯型发光峰.分析指出该结构电致发光的机制是：反向偏压下的强电场使Au/( SiO2/Si/SiO2)纳米双势垒/n⁺-Si结构发生了雪崩击穿 ,产生大量的电子-空穴对,它们在纳米SiO2层中的发光中心(缺陷或杂质)上复 合而发光. 关键词： 电致发光 纳米双势垒 高斯型发光峰 雪崩击穿}     

ZnS中Er3+的正向注入电致发光

已报导的三价稀土离子(RE3+)和二价锰离子发光的电致发光器件,都是激发机理为碰撞激发的高场发光器件[1,2]。我们研究了znS:RE2+的带边激发光谱,由此提出了实现正向注入下三价稀土离子电致发光的发光器件的设想,这种器件的必要条件是在存在三价稀土离子的区域同时注入电子和空穴。在离子注入的ZnS:Er3+发光二极管上观察到了这种发光,实验证明不是碰撞激发,而是正向注入产生的发光。     

Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode

Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er³⁺ ions doped in ZnO films.     

Erbium in silicon carbide crystals: EPR and high-temperature luminescence

Erbium ions have been incorporated for the first time in bulk 6H-SiC crystals during growth, and they were unambiguously identified from the ¹⁶⁷Er EPR hyperfine structure. High-temperature luminescence of erbium ions at a wavelength of 1.54 μm has been detected. The observed luminescence exhibits an increase in intensity with increasing temperature. The observation of Er luminescence in 6H-SiC offers a promising potential for development of semiconductor light-emitting devices at a wavelength within the fiber-optics transparency window. Fiz. Tverd. Tela (St. Petersburg) 41, 38–40 (January 1999)     

可变色的ZnSe:Er3+ MIS发光二极管

本文首次利用高场和低场激发下的有效发光中心,设计和制备了随外加电压极性改变而变色的ZoSe:Er3+ MIS发光二极管。这种发光二极管在正向电压激发下得到蓝色发光,而在反向电压激发下得到绿色发光。     

Electroluminescence from thin SiO2 layers after Si- and C-coimplantation

In this paper we explore the electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanted fluences were chosen in such a way that peak concentrations of excess Si and C of 5–10 at% were achieved. The devices show a broad photoluminescence (PL) between 2.0 and 3.2 eV with a main peak around 2.7 eV. The broad EL spectra show additional peaks around 3.3 eV and between 2.1 and 2.5 eV which are decreased with increasing Si/C concentration. The shape of the EL spectra does not change with increasing injection currents which implies that various types of defects occur for the different concentrations. The device stability is improved in comparison to Ge or Sn implanted oxide layers.     

Effective excitation cross section and lifetime of Er<Superscript>3+</Superscript> ions in Si: Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy

A series of Si: Er electroluminescent diode structures is fabricated by sublimation molecular-beam epitaxy. The diode structures efficiently emit at a wavelength of 1.5 μm under conditions of p-n junction breakdown at room temperature. The effective cross section of excitation of Er³⁺ ions with hot carriers heated by the electric field of a reverse-biased p-n junction and the lifetime of Er³⁺ ions in the first excited state ⁴I_13/2 are determined for structures that emit in a mixed breakdown mode and are characterized by the maximum intensity and excitation efficiency of the Er³⁺ electroluminescence.     

Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method

The photoluminescence of semiconducting structures Si: Er: O/Si grown by the molecular-beam epitaxy method is studied. The dependences of Er photoluminescence intensity on the intensity of pumping are measured at the liquid helium temperature. An analysis of the experimental results on the basis of the exciton model of excitation of Er ions in a crystalline silicon matrix reveals the significant role played by an alternative channel of free-exciton trapping (apart from the donor energy levels of erbium-oxygen complexes), as well as that played by the nonradiative channel in the recombination of excitons, bound to erbium donors, without the excitation of erbium. The ratio of the concentration of optically active centers of erbium luminescence to the total concentration of introduced erbium is estimated.     

基于纳米硅结构的氮化硅基发光器件电致发光特性研究

利用等离子体增强化学气相沉积法制备了镶嵌于氮化硅的高密度纳米硅薄膜,并以此作为发光有源层构建基于p-Si/氮化硅基发光层/AZO结构发光二极管,在室温下观察到了电致可见发光.在此基础上,在器件p-Si空穴注入层与氮化硅基发光层之间加入纳米硅薄层作为空穴阻挡层,研究器件电致发光性质,实验结果表明器件的发光强度显著增强,并且发光效率较无纳米硅阻挡层的发光器件提高了80%以上.     

Formation and properties of high density Si nanodots

Laser induced crystallization of ultrathin hydrogenated amorphous Si films or amorphous Si-based multilayered structures were used to get high density Si nanodots. The present technique can get size controllable Si nanodots embedded in various dielectric materials with uniform distribution which was revealed by cross-section transmission electron microscopy. Room temperature photoluminescence and electroluminescence were achieved with the emission wavelength in a visible light region both from a-SiN/Si nanodots/a-SiN sandwiched and Si nanodots/SiO₂ multilayered structures. The luminescence was associated with the radiative recombination of generated electron-hole pairs in Si nanodots or the luminescent surface states. The electroluminescence intensity is increased with increasing the injection current implying the bipolar carrier injection plays an important role in enhancing the luminescence efficiency. The formed Si nanodots by the present approach can be applied for many kinds of devices such as high efficient light emitting diodes and solar cells.     

基于Si-rich SiNx/N-rich SiNy多层膜结构电致发光特性研究

利用等离子体增强化学气相沉积法制备了富硅氮化硅/富氮氮化硅多层膜,并以此氮化硅基多层膜作为有源层构建电致发光器件,在室温下观察到了较强的电致可见发光.在此基础上,研究多层膜结构中作为势垒层的富氮氮化硅层对器件电致发光性质的影响,实验结果表明通过改变势垒层的Si/N组分,调制其势垒高度,器件的电致发光效率可得到显著地提高. 关键词： 电致发光 多层膜 氮化硅