Skin Bond Electron Relaxation Dynamics of Germanium Manipulated by Interactions with H2, O2, H2O,H2O2, HF,and Au

Although germanium performs amazingly well at sites surrounding hetero‐coordinated impurities and under‐coordinated defects or skins with unusual properties, having important impact on electronic and optical devices, understanding the behavior of the local bonds and electrons at such sites remains a great challenge. Here we show that a combination of density functional theory calculations, zone‐resolved X‐ray photoelectron spectroscopy, and bond order length strength correlation mechanism has enabled us to clarify the physical origin of the Ge 3d core‐level shift for the under‐coordinated (111) and (100) skin with and without hetero‐coordinated H₂, O₂, H₂O, H₂O₂, HF impurities. The Ge 3d level shifts from 27.579 (for an isolated atom) by 1.381 to 28.960 eV upon bulk formation. Atomic under‐coordination shifts the binding energy further to 29.823 eV for the (001) and to 29.713 eV for the (111) monolayer skin. Addition of O₂, HF, H₂O, H₂O₂ and Au impurities results in quantum entrapment by different amounts, but H adsorption leads to polarization.     

Chemical surface passivation of 3C‐SiC nanocrystals: A first‐principle study

The effect of the chemical surface passivation, with hydrogen atoms, on the energy band gap of porous cubic silicon carbide (PSiC) was investigated. The pores are modeled by means of the supercell technique, in which columns of Si and/or C atoms are removed along the [001] direction. Within this supercell model, morphology effects can be analyzed in detail. The electronic band structure is performed using the density functional theory based on the generalized gradient approximation. Two types of pores are studied: C‐rich and Si‐rich pores surface. The enlargement of energy band gap is greater in the C‐rich than Si‐rich pores surface. This supercell model emphasizes the interconnection between 3C‐SiC nanocrystals, delocalizing the electronic states. However, the results show a clear quantum confinement signature, which is contrasted with that of nanowire systems. The calculation shows a significant response to changes in surface passivation with hydrogen. The chemical tuning of the band gap opens the possibility plenty applications in nanotechnology. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem 110:2455–2461, 2010     

第一性原理模拟氢气分子在氧化硅团簇上的吸附

基于密度泛函理论,采用广义梯度近似(GGA)分析了H2分子吸附在氧化硅团簇上的几何结构、电子性质以及吸附能.结果发现:H2分子与Si3O4团簇相互作用时,H2分子被分解,游离的H原子优先吸附在末端Si原子上,表明Si3O4团簇体系对氢气的存储主要依赖于末端存在悬挂键的Si原子,接着H2分子才以分子的形式以较小吸附能吸附在Si3O4H4团簇上.氢气分子主要引起与其邻近的原子电荷的重新分布.该团簇体系的红外、拉曼光谱图有效地鉴定了H2分子的吸附状态,为理论上确定团簇的稳定结构和实验上对观测结果的分析提供有力的途径.     

Interaction of Hg Atom with Bare Si（111） Surface

1INTRODUCTION In the past decades,mercury has been a very use-ful electrode material in the fabrication and electrical measurement of molecule modified metal-metal and metal-semiconductor junctions.Majda et al.[1,2]constructed a symmetric Hg-SCn-CnS-Hg junction to study the electron tunneling properties of alkanethio-late bilayers.Whitesides et al.[3～5]fabricated Hg-SAM/SAM-Metal(Ag,Au,Cu)junctions to investi-gate the electrical breakdown voltage of self-assem-bled monolayers(SAMs…     

锐钛矿TiO2（101）表面电子能带结构的理论研究

二氧化钛作为一种理想的光催化和光电转换半导体材料,受到了广泛的关注和研究,其表面的电子能带结构作为其本征的化学性质之一,决定着表面上氧化还原反应发生的可能性. 对二氧化钛表面电子能带结构进行深入研究对于我们从微观上认识并改良二氧化钛这一光电催化材料,以及进一步开发利用更好的光催化材料都具有非常好的指导意义. 本论文采用密度泛函理论,计算研究了锐钛矿TiO₂（101）表面的电子能带结构,并通过与金红石TiO₂（110）晶面的对比,系统分析了两个表面电子能带结构的不同以及水分子的溶剂化作用对电子能带结构的影响.     

DFT and experimental studies of the structure and vibrational spectra of curcumin

The potential energy surface of curcumin [1,7‐bis(4‐hydroxy‐3‐methoxyphenyl)‐1,6‐heptadiene‐3,5‐dione] was explored with the DFT correlation functional B3LYP method using 6‐311G* basis. The single‐point calculations were performed at levels up to B3LYP/6‐311++G**//B3LYP/6‐311G*. All isomers were located and relative energies determined. According to the calculation the planar enol form is more stable than the nonplanar diketo form. The results of the optimized molecular structure are presented and compared with the experimental X‐ray diffraction. In addition, harmonic vibrational frequencies of the molecule were evaluated theoretically using B3LYP density functional methods. The computed vibrational frequencies were used to determine the types of molecular motions associated with each of the experimental bands observed. Our vibrational data show that in both the solid state and in all studied solutions curcumin exists in the enol form. © 2005 Wiley Periodicals, Inc. Int J Quantum Chem, 2005     

Theoretical Study on a 42 T Model of Beta Zeolite by Density Functional Theory Simulation

Density functional theory was applied to study the structure of Beta zeolite. A model cluster containing 41Si atoms, 1 Al atom, 70 O atoms and 29 H atoms was constructed. The model structures were optimized using the Becke＇s three-parameter hybrid method with the Lee-Yang-Parr correlation functional （B3LYP） and the 6-31G basis set applying the Gaussian03 program package. The NMR parameters were calculated to validate the rationality of the model. It was found that in the optimization models, all O-H bond lengths were in range of 0.984-0.985A^°, among which the model with O-H bond length of 0.98478A^° was more stable than the others. The ^1H and ^27Al chemical shifts of the most stable model were 4.03434 and 55.74 ppm, which were pretty consistent with Larry＇ s experimental data of 4.1 and 54 ppm. The relationship between other structure parameters and total relative electric energy has also been found. All the results exhibit that the 42 T （the total number of Si and Al atoms is 42） model has common properties of the standard of zeolite Beta.     

Interaction mechanisms between poly(amido‐amine) and nano‐silicon dioxide

To gain insight into the attachment of ?Si⁺ (SC) and ?SiO^? (SOA) ions (regarded as guests) to the lowest generation, ? NH₂‐terminated poly(amidoamine) (PAMAM) dendrimers (regarded as host) in the gas phase, density functional theory is used to investigate the structures and energetics of the complexes with B3LYP/6‐31+G (d) and HF/6‐31G basis sets. The initial parameters are obtained through the initial optimizations at the HF level using the most basic STO‐3G basis set. Various initial configurations of the ions bound to PAMAM are tested, and four stable conformers are found, i.e., types A to D. Types 1A and 2C are the most stable due to the chemical bond formations of Si? N° and Si? O, respectively. For type B, SC coordination to amide O sites occurs via electrostatic induction. For type D, SOA coordination to amide hydrogen and amine hydrogen sites occurs via hydrogen bond interaction. Spatial hindrance, electrostatic induction force, and hydrogen‐bond interaction play important roles in the complexation process. © 2013 Wiley Periodicals, Inc. This article was published online on 5 July 2012. An error was subsequently identified. This notice is included in the online and print version to indicate that both have been corrected on 3 August 2012.     

Phase-space relative Rényi entropy in density functional theory

The phase-space relative Rényi entropy is introduced using the information theoretical and thermodynamic view of density functional theory. In the special case of constant inverse temperature the phase-space relative Rényi entropy is a sum of the position-space relative Rényi entropy and a term arising from the momentum space. This quantity can be considered as a measure of similarity. It includes more information than the position-space measures, since it also incorporates momentum-space knowledge.     

椅型碳纳米管吸附氢原子电子结构的密度泛函研究

采用密度泛函方法对氢原子在(5,5)椅型碳纳米管上的吸附进行了研究, 分别考察了氢原子覆盖度为5%和10%时的构型和吸附能. 研究结果表明, H原子吸附在管外壁要比管内壁能量上更为有利, 同时第二个H原子倾向于吸附在前一个H原子的吸附位置邻近的碳原子上. 由能带计算结果得知, 吸附一个H原子时, 椅型碳纳米管将由导体转变为半导体; 当第二个H原子处在偶数位时, 纳米管仍保持较好的导电性能, 而吸附在奇数位时将使管的传输能力减弱. 本文进一步通过分析纳米管(共轭体系的分布情况对管传输性质的变化进行解释.     

DFT calculations on the electronic structures of BiOX (X = F, Cl, Br, I) photocatalysts with and without semicore Bi 5d states

The electronic structures of BiOX (X = F, Cl, Br, I) photocatalysts have been calculated with and without Bi 5d states using the experimental lattice parameters, via the plane-wave pseudopotential method based on density functional theory (DFT). BiOF exhibits a direct band gap of 3.22 or 3.12 eV corresponding to the adoption of Bi 5d states or not. The indirect band gaps of BiOCl, BiOBr, and BiOI are 2.80, 2.36, and 1.75 eV, respectively, if calculated with Bi 5d states, whereas the absence of Bi 5d states reduces them to 2.59, 2.13, and 1.53 eV successively. The calculated gap characteristics and the falling trend of gap width with the increasing X atomic number agree with the experimental results, despite the common DFT underestimation of gap values. The shapes of valence-band tops and conduction-band bottoms are almost independent of the involvement of Bi 5d states. The indirect characteristic becomes more remarkable, and the conduction-band bottom flattens in the sequence of BiOCl, BiOBr, and BiOI. Both O 2p and X np (n = 2, 3, 4, and 5 for X = F, Cl, Br, and I, respectively) states dominate the valence bands, whereas Bi 6p states contribute the most to the conduction bands. With the growing X atomic number, the localized X np states shift closer toward the valence-band tops, and the valence and conduction bandwidths evolve in opposite trends. Atomic and bond populations have also been explored to elucidate the atomic interactions, along with the spatial distribution of orbital density.     

Effective band gap reduction of titanium oxide semiconductors by codoping from first‐principles calculations

Doping is an efficient approach to narrow the band gap of TiO₂ and enhance its photocatalytic activity. Here, we perform generalized gradient approximation (GGA)+U calculations to narrow the band gap of TiO₂ by codoping of X (F, N) with transition metals (TM = Fe, Co) to extend the absorption edge to longer visible‐light wavelengths. Our results show that all the codoped systems can narrow the band gap significantly, in particular, (F+Fe)‐codoped system could serve as remarkably better photocatalysts with both narrowing of the band gap and relatively smaller formation energies than those of (F+Co) and (N+TM)‐codoped systems. Our results provide useful guidance for codoped TiO₂ efficient for photocatalytic activity. © 2013 Wiley Periodicals, Inc.     

Solid‐State NMR and DFT Combined for the Surface Study of Functionalized Silicon Nanoparticles

Silicon nanoparticles (NPs) serve a wide range of optical, electronic, and biological applications. Chemical grafting of various molecules to Si NPs can help to passivate their reactive surfaces, “fine‐tune” their properties, or even give them further interesting features. In this work, ¹H, ¹³C, and ²⁹Si solid‐state NMR spectroscopy has been combined with density functional theory calculations to study the surface chemistry of hydride‐terminated and alkyl‐functionalized Si NPs. This combination of techniques yields assignments for the observed chemical shifts, including the contributions resulting from different surface planes, and highlights the presence of physisorbed water. Resonances from near‐surface ¹³C nuclei were shown to be substantially broadened due to surface disorder and it is demonstrated that in an ambient environment hydride‐terminated Si NPs undergo fast back‐bond oxidation, whereas long‐chain alkyl‐functionalized Si NPs undergo slow oxidation. Furthermore, the combination of NMR spectroscopy and DFT calculations showed that the employed hydrosilylation reaction involves anti‐Markovnikov addition of the 1‐alkene to the surface of the Si NPs.     

Sin/Si-n(n=2-6)的结构和电子亲合能的密度泛函理论研究

选用四种不同的密度泛函理论方法(B3LYP,BLYP,BP86,B3P86),在全电子的双ζ加极化加弥散函数基组(DZP++)下,研究Sin/Si-n (n=2 -6 )体系的结构和电子亲合能.预测Si2 /Si-2 ,Si3 /Si-3 ,Si4 /Si-4 ,Si5 /Si-5 和Si6 /Si-6 的基态结构分别为C∞h(3Σ-g ) /C∞h(2Σ+g ),D3h(3A′2 ) /C2υ(2A1 ),D2h(1Ag) /D2h(2B2g),D3h(1A′1 ) /D3h(2A″2 )和C2υ(1A1 ) /D4h(2A2u).在电子亲合能方面,B3LYP方法预测的电子亲合能是最可靠的.预测Si2,Si3,Si4,Si5和Si6的电子亲合能分别为 2. 05, 2. 34, 2. 16, 2. 48和 2. 13eV.     

SinH/SinH-(n=3～8)的结构和电子亲合能的研究

选用四种不同的密度泛函理论方法(B3LYP，B3P86，BLYP，BP86)，在全电子的双ξ加极化加弥散函数基组(DZP )下，对SinH／SinH^-(n=3～8)体系进行研究，获得它们的基态结构和电子亲合能。预测Si3H／Si3H^-,Si4H／Si4H^-,Si5H／Si5H^-,Si6H／Si6H^-，Si7H／Si7H^-和Si8H／Si8H^-的基态结构分别为C2v(^2B2)／C2v(1^A1)氢桥结构，Cs(^2A’)／C(^1A’)，C2v(^2B2)／C2v(^1A1)，C2v(^2B2或^2B1)／C4v(^1A1)，C5v(^2A1)／C5v(^1A1)和C5(^2A‘‘)／C3v(^1A1)。在电子亲合能方面，B3LYP方法预测的电子亲合能是最可靠的，预测Si3H，Si4H，Si5H，Si6H，Si7H和Si8H的电子亲合能分别为2．56，2．59，2．84，2．86，3．19和3．14eV。