高温稳定25 Gbit/s 850 nm垂直腔面发射激光器

通过在N型分布布拉格反射镜(DBR)中采用高热导率AlAs材料,且增加AlAs层所占的厚度比例,在保持DBR反射率基本不变的情况下,大幅度增加了N型DBR的热导率,提高了器件高温工作性能。制作了氧化限制型顶发射VCSEL器件,不同温度条件下的直流测试结果表明:25℃时热反转功率超过8 mW;85℃时热反转电流为11 mA,功率达5 mW,表现出较好的高温工作特性。远场发散角小于17°。0～70℃的温度条件下眼图都较清晰,表明器件满足高温25 Gbit/s工作要求。     

Polarization and spatial-mode behavior of short-wavelength VCSELs

We have investigated the packaging introduced feedback and resulting variations in the characteristics of Vertical-cavity surface-emitting lasers (VCSELs). An integrated test and characterization method was developed for both the packaged and bare dies as well as on-wafers chips. Using an ‘integrated test bench (ITB)’ for characterization, packaged and ‘un-packaged’ VCSELs from multiple sources were studied. ITB was used to monitor and measure simultaneously several beam-parameters under various bias conditions including both dc and high-speed pulsed pumping at room-temperature, or at higher-/lower-temperatures that are thermo-electrically controlled. Typical beam parameters included state of polarization (SOP), transverse (spatial) modes, wavelength spectra, and output power. A common observation was that majority of devices are affected by the presence of optical windows capping the package. A shift in longitudinal mode was noticeable in packaged versus ‘un-packaged’ (window-removed) devices. But, SOP and transverse modes in various devices are affected severely and in an unpredictable fashion.     

Diode pumped 850 nm vertical-cavity surface-emitting laser

Very little, if any, has been published on optically pumped 850 nm vertical-cavity surface-emitting lasers (VCSELs), particularly for doped structures. This paper investigates GaAs-based VCSELs which have not been optimized for optical pumping work. Characterisation was carried out for both pulsed and continuous wave (CW). Pulsed operation causes a lower rise in temperature, thus postponing the onset of thermal rollover, and allowing the device to be operated at higher powers. A threshold of ∼160 kW/cm², and single mode output with incident power density of up to 225 kW/cm² were obtained. From the simulation work done, it has been observed that for optically pumped VCSELs, at higher pump density, there was faster turn on and higher output power, and that dilute nitride active material give better output performance compared to GaAs.     

光反馈诱发长波长垂直腔面发射激光器低功耗偏振开关

基于扩展的自旋反转模型,对光反馈诱发下长波长垂直腔面发射激光器中的低功耗偏振开关进行了理论研究.研究表明:长波长垂直腔面发射激光器在自由运行下未能获得的偏振开关现象,可以通过引入中等强度的偏振旋转光反馈来实现.对比强弱两种不同的线性色散效应,发现了一些有趣的现象:弱线性色散条件下更易于在低注入电流下获得偏振开关,并且产生偏振开关所需的反馈强度具有更大的调控范围;强色散效应中未能始终获得偏振开关,会出现两模共存区,并且偏振开关出现的注入电流值较高.同时,观察到的偏振模跳变和多偏振开关现象类似于短波长垂直腔面发射激光器,因而证实这两类激光器在偏振开关的本质规律上是相似的.此外,还对长波长垂直腔面发射激光器不易在低注入电流下获得偏振开关的原因进行了分析,并给出了合理的解释.     

新型垂直腔面发射半导体激光器阵列

设计出四次质子注入工艺制备垂直腔面发射激光器(VCSEL)阵列的方法,实现了对阵列中单元器件间的隔离以及对单元器件注入电流限制的分别作用。一方面通过对VCSEL外延片上分布布拉格反射镜(DBR)两次较浅的质子注入形成高电阻区域实现对阵列中单元器件间的隔离,另一方面通过再次的两次较深度的可以达到有源区上表面的质子注入形成高电阻区域实现对单元器件注入电流的限制。由瞬态热传导方程对阵列中单元器件间的热相互作用进行了理论分析。采用四次质子注入工艺实现了2×2、3×3简单的二维GaAs/AlGaAs量子阱VCSEL阵列,并对器件的激射近场、光谱特性及功率等进行了测量。     

Upstream vertical cavity surface-emitting lasers for fault monitoring and localization in WDM passive optical networks

As wavelength division multiplexed passive optical networks (WDM-PONs) are expected to be first deployed to transport high capacity services to business customers, real-time knowledge of fiber/device faults and the location of such faults will be a necessity to guarantee reliability. Nonetheless, the added benefit of implementing fault monitoring capability should only incur minimal cost associated with upgrades to the network. In this work, we propose and experimentally demonstrate a fault monitoring and localization scheme based on a highly-sensitive and potentially low-cost monitor in conjunction with vertical cavity surface-emitting lasers (VCSELs). The VCSELs are used as upstream transmitters in the WDM-PON. The proposed scheme benefits from the high reflectivity of the top distributed Bragg reflector (DBR) mirror of optical injection-locked (OIL) VCSELs to reflect monitoring channels back to the central office for monitoring. Characterization of the fault monitor demonstrates high sensitivity, low bandwidth requirements, and potentially low output power. The added advantage of the proposed fault monitoring scheme incurs only a 0.5 dB penalty on the upstream transmissions on the existing infrastructure.     

基于两正交互耦1550nm垂直腔面发射激光器获取多路随机数

提出将正交互耦1550 nm垂直腔面发射激光器(1550 nm-VCSEL)在优化条件下输出的多路平均功率可比拟、延时特征(TDS)得到有效抑制的混沌信号作为混沌熵源,经8位模数转换器(ADC)量化和最低有效位(m-LSB)后续处理获取多路物理随机数的方案,并研究了系统参量对最终获取的比特序列随机性的影响.首先,基于VCSEL的自旋反转模型分析耦合强度和频率失谐对两个正交互耦合1550 nm-VCSEL输出动力学的影响,初步确定利用该系统产生四路平均功率可比拟、TDS得到抑制的混沌信号所需的耦合强度和频率失谐优化范围;在此基础上,选择一个耦合强度值,利用处于优化范围内的不同频率失谐下获取的四路混沌信号作为熵源,经8位ADC量化和m-LSB后续处理得到最终的比特序列;最后,采用NIST Special Publication800-22统计测试套件对获取的最终比特序列的随机性能进行测试,确定了同时获取四路高质量随机数所需的参数范围.     

Coherent polarization stabilization in large-aperture rectangular post bottom-emitting vertical-cavity surface-emitting lasers

The output characteristics of large-aperture rectangular post bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) were investigated. It was shown that the output power of the rectangle VCSELs can be up to 660 mW at a current of 5 A. Both H-polarization (horizontal) and V-polarization (vertical) demonstrated a coherent stabilization over the entire range of operation current, and coherent spectrum blue-shift of H-polarization light occurred with respect to V-polarization light at three different injected currents. The polarization states of output light were stabilized in the two orthogonal directions and H-polarization was the most principal polarization which was parallel to the longer side of the rectangular aperture. From the relationship between polarization ratio and aspect ratio of the oxidation confinement aperture (OCA), it was found that the highest polarization ratio (about 2:1) took place when the appropriate aspect ratio was 5:3, which meant better polarization stabilization in large-aperture VCSELs.     

Modeling,design, growth and characterization of red wavelength range microcavity emitters for plastic optic fiber applications

Resonant cavity light emitting diodes (RC-LEDs) and vertical cavity surface emitting lasers (VCSELs) for the red wavelength range are presented in the paper. A wide variety of simulation tools were employed in the device design and optimization and the good agreement between simulations and measurements enabled effective device development. Our red wavelength range RC-LEDs were mainly intended for short-haul communication systems based on polymethyl methacrylate plastic optical fiber and were optimized accordingly. They are achieving, under different structure and working regime variants, high output power (15 mW), high external efficiency (9.5%), record small-signal modulation bandwidth (f _-3dB up to 350 MHz), error-free back-to-back transmission rates beyond 622 Mbits/s, adjustable far-field pattern and good POF coupling efficiency with reasonably wide tolerances and without using auxiliary optics. In view of the possible use of graded-index POFs, free-space transmission and other high bandwidth or high spectral purity applications, VCSELs in the red wavelength range were also realized. They have achieved sub-milliamp room-temperature (RT) continuous-wave (CW) lasing for an 8 m diameter emission window and exhibited an external quantum efficiency of 6.65% for 10 m devices in RT CW operation. The VCSEL structures were far from optimal – not even incorporating all the RC-LED structure refinements – and significant improvement in performance characteristics are predicted for the optimized layer structure.     

1550 nm垂直腔面发射激光器的特征参量随温度的变化

在采用自旋反转模型分析垂直腔面发射激光器（VCSELs）动力学行为的过程中,为了正确预测VCSELs的动力学行为,需要准确给出自旋反转模型中光场衰减速率k、总反转载流子衰减速率γ_N、线性二向色性系数γ_a、线性双折射系数γ_p、自旋反转速率γ_s和线宽增强因子α这6个特征参量.本文对1550 nm VCSELs在自由运行和平行光注入下的输出特性进行实验分析,获取了这6个特征参量的值,并着重研究了当激光器温度在10.00–30.00 ℃范围内变化时,这6个特征参量呈现的变化趋势.研究结果表明,随着温度的逐渐升高,γ_p整体呈现逐渐增加的趋势,γ_a,γ_s,γ_N和k呈现复杂的变化趋势,而α则呈现逐渐减小的趋势.     

New functions of VCSEL-based optical devicesInvited Paper

We have seen a lot of unique features off vertical cavity surface emitting lasers (VCSELs), such as low power consumption, wafer-level testing, small packaging capability, and so on. The market of VCSELs has been growing up rapidly in recent years and they are now the key devices in local area networks using multi-mode optical fibers. In addition, new functions on VCSELs have been demonstrated. In this paper, the recent advances of VCSEL photonics will be reviewed, which include the wavelength engineering and the athermal operation based on microelectro mechanical system (MEMS) technologies. Also, this paper explores the potential and challenges for new functions of VCSELs, including high-speed control of optical phase, slow light devices, plasmonic VCSELs, and so on.     

Multiwavelength GaN-Based Surface-Emitting Lasers and Their Design Principles

Dual-wavelength lasing operations are demonstrated in GaN-based vertical-cavity surface-emitting lasers (VCSELs) comprising ingeniously designed asymmetric InGaN quantum wells (AS-QWs). The dual laser modes show exact positive-correlated polarization dependences with a high degree of polarization of up to 98%. By simply tuning the pump energy, the components and intensity of the laser outputs can be continuously changed, making wavelength selection and switching available for the GaN-based VCSELs. Detailed theoretical analysis and experimental measurements show that the intensity of optical gain and the coupling between the active layer and optical field, namely the electron–photon interaction, as well as carrier tunneling and photon reabsorption play a crucial role in the multiwavelength lasing processes. Moreover, the design principles of the proposed AS-QWs and multistacked size-varied quantum dot (MS-QD) active regions are elaborated to provide guidelines for controllable multiwavelength emissions in GaN-based surface-emitting lasers. These results not only provide better understanding of lasing in nitride-based microcavity systems but also shed insight into the more fundamental issues of electron–photon coupling in such systems. Importantly, such controllable multiwavelength laser operations may extend nitride-based VCSELs to previously inaccessible areas, for example, flip-flop, ultrafast switches, and other functional devices such as Raman lasers and sensors.     

Tunable single-mode fiber-VCSEL using an intracavity polymer microlens

We report a tunable, single-mode vertical cavity surface-emitting laser (VCSEL) format suitable for array operation, power scaling, fiber coupling, and operation in isolated environments such as those required by atom optics. The devices are fiber VCSELs, consisting of a semiconductor gain and mirror structure separated from a mirror-coated optical fiber by an air (or vacuum) gap. The gain structure has polymer microlenses fabricated on its surface, of characteristics suitable to focus the oscillating mode on both cavity mirrors, ensuring stable fundamental mode emission and high fiber coupling efficiency. We demonstrate such devices in continuous-wave operation at 1.03 microm at room temperature, with a single-mode tuning range of 13 nm, laser threshold as low as 2.5 mW, and a maximum fiber-coupled output power of 10 mW.     

Self-Frequency-Doubling Ytterbium Lasers

Ytterbium-doped self-frequency-doubling lasers offer high efficiency, tunable, visible and near-infrared, cw and pulsed operation from compact devices. We review the performance of ytterbium-doped yttrium aluminium borate (Yb:YAB) self-frequency-doubling lasers. Because of the detailed dynaMisc of the interaction of the nonlinear pulse shaping process for mode-locking or for Q-switching self-frequency-doubled lasers, we observe pulse lengthening in each process when frequency doubling is optimised, with high average output power. However, for continuous wave operation, the self-frequency doubling process may be optimised to give highly efficient, robust, widely-tunable output in the visible as well as fundamental output in the infrared.     

Transverse-Mode Control of VCSELs With Convex Mirror

We propose the transverse-mode control of vertical-cavity surface-emitting lasers (VCSELs) with a convex mirror. A possibility of improvements on single-mode output power and higher-order mode suppression is presented by optimizing a convex mirror.     

Management of the electrical injection uniformity in broad-area top-emitting VCSELs

The electrical properties of broad-area 850 nm top emitting VCSELs have been investigated in order to improve carrier injection uniformity in their active zone. First, we have demonstrated using an electrical simulation tool that a multi-point localized injection design associated with a spreading layer at the top of the device (ITO) can lead to a significant improvement of carrier injection and on its spatial distribution. Secondly, the electrical contrast achievable by applying this method with localized etchings has been experimentally measured. Finally, stripe-shaped devices with output power up to 50 mW in a continuous-wave operation at room temperature have been demonstrated.     

Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs

The comprehensive optical-electrical-thermal-recombination self-consistent simulation of an operation of quantum-dot (QD) VCSELs is used to optimise their structure for GaAs-based oxide-confined QD VCSELs predestinated for the second-generation 1.3-μm optical-fibre communication. It has been found that, contrary to a general belief of lasing thresholds of QD lasers inversely proportional to their density, for any design of QD VCSELs, there exists an optimal QD density ensuring its lowest lasing threshold. Besides, in intentionally strongly detuned QD VCSELs, to reach the desired 1.30-μm radiation, it is superfluous to improve uniformity of their QDs because their lasing thresholds are surprisingly distinctly lower for less uniform QDs. Then for these devices more optimal are somewhat non-uniform QDs and a necessary optical gain may be achieved with the aid of an increasing QD density.     

High-power vertical-cavity surface-emitting lasers bonded with efficient packaging

<正>High-power vertical-cavity surface-emitting lasers(VCSELs) are processed using a wet thermal-selective oxidation technique.The VCSEL chips are packaged by employing three different bonding methods of silver solder,In-Sn solder,and metalized diamond heat spreader.After packaging,optical output power, wavelength shift,and thermal resistance of the devices are measured and compared in an experiment.The device packaged with a metalized diamond heat spreader shows the best operation characteristics among the three methods.The 200-μm-diameter device bonded with a metalized diamond heat spreader produces a continuous wave optical output power of 0.51 W and a corresponding power density of 1.6 kW/cm~2 at room temperature.The thermal resistance is as low as 10 K/W.The accelerated aging test is also carried out at high temperature under constant current mode.The device operates for more than 1000 h at 70℃,and the total degradation is only about 10%.     

Numerical analysis of multi-wavelength cascaded Raman fiber lasers based on genetic algorithm

A novel numerical method is presented for the calculations of the coupled propagation equations in multi-wavelength Raman fiber lasers. By taking the advantages of genetic algorithm and shooting method, only a few of the best individuals at each generation are chosen to implement several shootings in order to accelerate theirs converging. The output characteristics of an all-fiber three-wavelength Raman fiber laser have been analyzed based on the proposed algorithm. Results show that the total output power linearly depends on the pump power with a slope efficiency of ∼51%. For the three output Stokes, the slope efficiencies of the longer wavelengths are larger than that of the shorter ones because the optical energy at the Stokes with shorter wavelengths allows for a transfer of optical power to the longer Stokes via stimulated Raman scattering. We also find that the total output power degrades by less than 10% by adjusting the output-coupler reflectivity and is insensitive to the variation of the Raman fiber length over a large range.     

Five-hundred-milliwatts distributed-feedback diode laser emitting at 940 nm

A DFB laser emitting at a wavelength around 940 nm in a single longitudinal mode up to an output power of 500 mW with a side mode suppression ratio greater than 50 dB is presented. More than 4 nm tuning range was reached by varying the current between 100 and 800 mA. Up to a power of about 300 mW, the lateral far field revealed stable fundamental mode operation.