C-V法研究温度对GaN基蓝光二极管pn结的影响

采用C-V法,根据C^-2-V曲线和C^-3-V曲线,并结合C-V幂律指数k,分析了T=25~-195℃温度范围内,温度变化对GaN基蓝光发光二极管pn结类型的影响。实验结果表明:当T为25℃和-50℃时,C^-2-V呈明显的线性关系,同时幂律指数k为0.5,说明该温度范围内的pn结类型为严格的突变结;而温度降低至-100℃时,k值变为0.45,说明pn结类型开始发生变化;当温度继续降低至-150℃和-195℃时,幂律指数k分别为0.30和0.28,说明pn结类型已经发生了变化,变为非突变非缓变结。造成这一现象的原因是低温导致的载流子冻析效应,以及晶体的缺陷和界面态形成的局域空间电荷区在低温环境下,影响了pn结原来的空间电荷分布,并改变了pn结类型。     

Tenfold magnetoconductance in a nonmagnetic metal film

We present magnetoconductance (MC) measurements of homogeneously disordered Be films whose zero field sheet conductance ( G) is described by the Efros-Shklovskii hopping law G(T) = (2e(2)/h)exp-(T0/T)(1/2). The low field MC of the films is negative with G decreasing a factor of 2 below 1 T. In contrast the MC above 1 T is strongly positive. At 8 T, G increases tenfold in perpendicular field and fivefold in parallel field. In the simpler parallel case, we observe field enhanced variable range hopping characterized by an attenuation of T0 via the Zeeman interaction.     

Quantum phase transition in one-dimensional arrays of resistively shunted small Josephson junctions

We have observed a superconductor-insulator transition in one-dimensional (1D) arrays of small Josephson junctions by changing both the resistance R(S) of normal metal resistors shunting each junction and the ratio of the Josephson coupling energy E(J) to the charging energy E(C). The phase boundary lies at R(S) approximately R(Q) (R(Q) identical with h/4e(2)=6.45 kOmega) when E(J)/E(C) is smaller than about unity. We discuss the obtained phase diagram in terms of theoretical models of the dissipation-driven quantum phase transition, with particular attention to differences from 2D arrays.     

Gate-controlled atomic quantum switch

An atomic-scale quantum conductance switch is demonstrated that allows us to open and close an electrical circuit by the controlled and reproducible reconfiguration of silver atoms within an atomic-scale junction. The only movable parts of the switch are the contacting atoms. The switch is entirely controlled by an external electrochemical voltage applied to an independent third gate electrode. Controlled switching was performed between a quantized, electrically conducting "on state" exhibiting a conductance of G(0)=2e(2)/h ( approximately 1/12.9 kOmega) or preselectable multiples of this value and an insulating "off state."     

Spin-polarized conductance induced by tunneling through a magnetic impurity

Using the zero mode method, we compute the conductance of a wire consisting of a magnetic impurity coupled to two Luttinger liquid leads characterized by the Luttinger exponent alpha(>or=1). We find for resonance conditions, in which the Fermi energy of the leads is close to a single particle energy of the impurity, that the conductance as a function of temperature is G approximately equal (e(2)/h)(T/T(F))(2(alpha-2)), whereas for off-resonance conditions the conductance is G approximately equal (e(2)/h)(T/T(F))(2(alpha-1)). By applying either a gate voltage or a magnetic field or both, one of the spin components can be in resonance while the other is off resonance causing a strong asymmetry between the spin-up and spin-down conductances.     

Universal conductance distributions in the crossover between diffusive and localization regimes

The full distribution of the conductance P(G) in quasi-one-dimensional wires with rough surfaces is analyzed from the diffusive to the localization regime. In the crossover region, where the statistics is dominated by only one or two eigenchannels, the numerically obtained P(G) is found to be independent of the details of the system with the average conductance as the only scaling parameter. For < or =2e(2)/h, the shape of P(G) remarkably agrees with those predicted by random matrix theory for two fluctuating transmission eigenchannels.     

Electron cotunneling transport in gold nanocrystal arrays

We describe current-voltage (I-V) characteristics of alkyl-ligated gold nanocrystals ~5 nm arrays in a long screening length limit. Arrays with different alkyl ligand lengths have been prepared to tune the electronic tunnel coupling between the nanocrystals. For long ligands, electronic diffusion occurs through sequential tunneling and follows activated laws, as a function of temperature σ∝e(-T(0)/T) and as a function of electric field I∝e(-E(0)/E). For better conducting arrays, i.e., with small ligands, the transport properties cross over to the cotunneling regime and follow Efros-Shklovskii laws as a function of temperature σ∝e(-(T(ES)/T)(1/2) and as a function of electric field I∝e(-(E)(ES)/E)(1/2). The data show that electronic transport in nanocrystal arrays can be tuned from the sequential tunneling to the cotunneling regime by increasing the tunnel barrier transparency.     

Investigation of acceptor states in ZnO by junction DLTS

We have realized a p-type ZnO surface layer by N⁺ ion implantation of a high quality ZnO wafer and subsequent annealing. The conduction type of this surface layer was revealed by scanning capacitance microscopy. Rectifying current–voltage characteristics for processed devices were coherent with the existence of an internal pn junction. Deep donor- and acceptor-like defects were investigated by junction deep level transient spectroscopy. The donor-like levels correspond to those commonly observed for E1 and E3 defects. The acceptor states resolved have thermal activation energies of about 150 meV and 280 meV, respectively.     

自旋轨道耦合作用下石墨烯pn结的电子输运性质

本文研究了自旋轨道耦合作用下石墨烯纳米带pn结的电子输运性质. 当粒子的入射能量处于pn结两端势能之间时, 粒子将会以隧穿的形式通过石墨烯pn结, 同时伴随着电子空穴转换. 电导随费米能的变化曲线呈不等高阶梯状, 并在费米能位于pn结两端能量中点时取得最大值. 随着石墨烯pn结长度的增加, 电导以指数形式衰减. 自旋轨道耦合作用导致的能隙会使电导显著减小, 而边缘态的粒子则可以几乎毫无阻碍地通过pn结. 本文用一个简单的子带隧穿模型解释了上述特征. 最后还研究了在pn转换区中掺入替位杂质的情况. 在弱杂质下, 电导随费米能变化的曲线将不再对称; 当杂质较强时, 仅边界态的形成的电导台阶能够保持.     

Search for effects beyond the born approximation in polarization transfer observables in e(over→)p elastic scattering

Intensive theoretical and experimental efforts over the past decade have aimed at explaining the discrepancy between data for the proton electric to magnetic form factor ratio, G(E)/G(M), obtained separately from cross section and polarization transfer measurements. One possible explanation for this difference is a two-photon-exchange contribution. In an effort to search for effects beyond the one-photon-exchange or Born approximation, we report measurements of polarization transfer observables in the elastic H(e[over →],e(')p[over →]) reaction for three different beam energies at a Q(2)=2.5 GeV(2), spanning a wide range of the kinematic parameter ε. The ratio R, which equals μ(p)G(E)/G(M) in the Born approximation, is found to be independent of ε at the 1.5% level. The ε dependence of the longitudinal polarization transfer component P(?) shows an enhancement of (2.3±0.6)% relative to the Born approximation at large ε.     

Critical Kondo destruction in a pseudogap Anderson model: scaling and relaxational dynamics

We study the pseudogap Anderson model as a prototype system for critical Kondo destruction. We obtain finite-temperature (T) scaling functions near its quantum-critical point, by using a continuous-time quantum Monte Carlo method and also considering a dynamical large-N limit. We are able to determine the behavior of the scaling functions in the typically difficult to access quantum-relaxational regime (?ω相似文献   

影响磁性pn结自旋极化输运特性的因素

利用漂移扩散理论研究了磁性pn结中自旋的输运特性.探讨了外加电压、平衡自旋极化率、外加自旋注入和自旋寿命对磁性pn结电流密度和电阻的影响,讨论了磁性pn结自旋伏特效应与pn结宽度的关系.发现平衡自旋极化率使得不同自旋方向电子具有不同的势垒高度从而能有效调制电流;而外加自旋注入则为磁性pn结提供了非平衡自旋极化电子从而达到对电流的调制作用,同时发现自旋伏特电流随准中性p区宽度减小而增大. 关键词： 磁性pn结 自旋极化率 自旋寿命 自旋伏特效应     

Measurement of quantum noise in a carbon nanotube quantum dot in the Kondo regime

The current emission noise of a carbon nanotube quantum dot in the Kondo regime is measured at frequencies ν of the order or higher than the frequency associated with the Kondo effect k(B)T (K)/h, with TK the Kondo temperature. The carbon nanotube is coupled via an on-chip resonant circuit to a quantum noise detector, a superconductor-insulator-superconductor junction. We find for hν ≈ k(B)T(K) a Kondo effect related singularity at a voltage bias eV ≈ hν, and a strong reduction of this singularity for hν ≈ 3k(B)T(K), in good agreement with theory. Our experiment constitutes a new original tool for the investigation of the nonequilibrium dynamics of many-body phenomena in nanoscale devices.     

Quantum interference and ballistic transmission in nanotube electron waveguides

The electron transport properties of well-contacted individual single-walled carbon nanotubes are investigated in the ballistic regime. Phase coherent transport and electron interference manifest as conductance fluctuations as a function of Fermi energy. Resonance with standing waves in finite-length tubes and localized states due to imperfections are observed for various Fermi energies. Two units of quantum conductance 2G(0) = 4e(2)/h are measured for the first time, corresponding to the maximum conductance limit for ballistic transport in two channels of a nanotube.     

稀土区奇奇核πh1／2×vi13／2带B（M1）／B（E2）比值增强特性

在稀土区奇奇核πh1／2×vi13／2转动带中，系统地观测到随转动频率或角动量增加，B(M1)／B(E2)曲线表现出所谓parabola-1ike形状，即在增加到某一转动频率或自旋后，B(M1)／B(E2)比值快速增强。基于推转模型和粒子转子模型关于奇奇核二准粒子转动带磁偶极约化跃迁几率的描述，对稀土区双奇核的这一行为进行了讨论。指出该现象的发生与vi13/2准中子转动顺排特性密切相关。B(M1)／B(E2)比值在接近第二带交叉(即BC准中子对顺排)的较高频率处的增强效果，可以理解为主要来源于带交叉引起的波函数中混合四准粒子成分的结果。通过对B(M1)/B(E2)比值的增强效果发生在较低频率处的分析，对稀土区奇奇核πh1／2×vi13／2带角动量耦合图像有了进一步认识。It is systematically observed that the B(M1)/B(E2) plots with the increasing of rotational frequency, behaves as a so called parabola like shape in the π h11/2 νi13/2 bands of rare earth doubly odd nuclei (i.e., the B(M1)/B(E2) ratios increase rapidly after a certain rotational frequency). Such a phenomenon is discussed based on the formula of magnetic dipole reduced transition probability deduced from the Cranking Shell Model and Particle Rotor Model respectively. It is pointed out that, the occurrence of this behavior is closely related to the alignment nature of the νi 13/2 quasineutron. The increasing of B(M1)/B(E2) occurring at large frequency approaching the second BC crossing can be understood as mainly resulted from the mixing of wave function with the 4 quasiparticle band caused by the band crossing. Insight into the angular momentum coupling scheme between the quasiparticles and collective core in the πh11/2 νi 13/2 structures of rare earth doubly odd nuclei is gained by analyzing the increasing behavior of B(M1)/B(E2) ratios occurring at low rotational frequency.     

Density of states of amorphous GdxSi1-x at the metal-insulator transition

We have determined the electronic density of states of amorphous Gd xSi (1-x), N(GdSi)(E), in the vicinity of the metal-insulator transition by measuring the tunneling conductance dI/dV across a Gd xSi (1-x)/oxide/Pb tunnel junction at low T (T approximately 100 mK). By applying a magnetic field we can tune through the metal-insulator transition and simultaneously measure the transport and N(E) on a single sample. We find a smooth transition from a metal with strong Coulomb interactions to a developing Coulomb gap in the insulating regime. In the metallic region N(GdSi)(0) scales approximately with sigma(2).     

Quantum critical 5f electrons avoid singularities in U(Ru,Rh)2Si2

We present specific heat measurements of 4% Rh-doped URu2Si2 at magnetic fields around the proposed metamagnetic transition field H(m) approximately 34 T, revealing striking similarities to the isotructural Ce analog CeRu2Si2 for H>H(m). This suggests that strongly renormalized hybridized-band models apply equally well to both systems. The vanishing bandwidths as H-->H(m) are consistent with a quantum-critical point close to H(m). The existence of a phase transition into an ordered phase in the vicinity of H(m) for 4% Rh-doped URu2Si2, but not for CeRu2Si2, is consistent with a stronger superexchange in the case of the U 5f system. Irreversible processes at the transition indicate a strong coupling of the 5f orbitals to the lattice, most suggestive of electric quadrupolar order.     

ZnS:Mn2+,Sm3+粉末材料中Mn2+和Sm3+之间的能量传递

研究了ZnS粉末材料中Mn2+中心和Sm3+中心之间的相互作用.通过测量单独由Mn2+或Sm3+掺杂及Mn2+,Sm3+同时掺杂的ZnS粉末材料的发射光谱、激发光谱、发光衰减以及选择激发发光光谱,证实了Mn2+和Sm3+之间存在偶极子-偶极子相互作用的无辐射能量传递.同时还计算了能量传递几率和传递效率.     

对半导体pn结接触电势的一个讨论

讨论了半导体pn结内建电场和接触电势的形成与可测性，回答了在半导体物理学pn结内容教学中学生经常会提出的一个似是而非的问题．从热力学第一定律、金属-半导体接触等不同角度详细解释了热平衡(零偏下)时pn结不可能对外输出电压和电流的原因．     

Lattice model for the SU(N) Néel to valence-bond solid quantum phase transition at large N

We generalize the SU(N=2) S=1/2 square-lattice quantum magnet with nearest-neighbor antiferromagnetic coupling (J(1)) and next-nearest-neighbor ferromagnetic coupling (J(2)) to arbitrary N. For all N>4, the ground state has valence-bond-solid order for J(2)=0 and Néel order for J(2)/J(1)?1, allowing us access to the transition between these types of states for large N. Using quantum Monte Carlo simulations, we show that both order parameters vanish at a single quantum-critical point, whose universal exponents for large enough N (here up to N=12) approach the values obtained in a 1/N expansion of the noncompact CP(N-1) field theory. These results lend strong support to the deconfined quantum-criticality theory of the Néel-valence-bond-solid transition.