Preparation and Magnetic Properties of Submicron CrO2 Thin Film on Poly-crystal TiO2 Film

The submicron chromium dioxide(CrO₂) thin film was fabricated on a poly-crystal titania(TiO₂) film using Si wafers as substrates by atmospheric pressure chemical vapor deposition(CVD) method. X-Ray diffraction patterns show that the CrO₂ films were pure rutile structure. Scanning electron microscopy(SEM) images indicate that the CrO₂ films consisted of submicron grains with a grain size of 250―750 nm. The magnetic researches reveal that the magnetic easy axis is parallel to the films, and at room temperature, the CrO₂ films show linear magnetoresistance.     

脉冲激光沉积制备SrSn1-xCoxO3外延薄膜的微结构表征及能带调控

钙钛矿结构SrSnO₃因其独特的介电和半导体性质而备受关注,通过掺杂可显著调控其电学、磁学性能,拓宽其应用范围。本研究在单晶SrTiO₃(001)衬底上通过脉冲激光方法外延生长了SrSn_1-xCo_xO₃ (x = 0, 0.16, 0.33, 0.5) (SSCO)薄膜,探究了Co含量对薄膜结晶性、微观结构、光学性能以及介电性能的影响。结果表明, SrSn_1-xCo_xO₃薄膜可在SrTiO₃(001)衬底上外延生长, Co掺杂不会导致薄膜结晶质量的劣化。薄膜表面形貌平整、致密,膜厚200 nm,表面粗糙度为0.44 nm。随薄膜中Co掺杂量增加,薄膜透过率从90%降至25%,光学带隙从4.24 eV降至2.44 eV。介电性能测试表明,掺杂薄膜在10⁶Hz时介电常数为70.1,比无掺杂SrSnO₃薄膜提高57%。室温时SSCO薄膜表面电阻率为172 MΩ,在1000℃范围内薄膜结构稳定。     

ALD-Al2O3涂层保护的高抗湿5-氨基戊酸铰链甲胺铅溴钙钛矿薄膜

近年来,混合铅卤钙钛矿材料在光电领域引发的研究热潮引人注目。然而,钙钛矿材料对水和氧气的敏感性严重的阻碍了其实用化进程。在众多的稳定钙钛矿的方法中,利用简单的原子层沉积方法(Atomic layer deposition,ALD)在钙钛矿表面沉积一层保护层的技术具有极大的潜力。而ALD应用的困难在于,在常规的ALD过程中,做为氧源的H2O和O3对铅卤钙钛矿有着腐蚀作用。在本文,我们提出将双官能团的5-氨基戊酸(5-Aminovaleric acid,AVA)引入到CH₃NH₃PbBr₃(MAPbBr₃)钙钛矿晶格层中,形成稳定的铰链结构的2D/3D钙钛矿AVA(MAPbBr₃)2。AVA的引入可以钝化并防止ALD过程中水对钙钛矿的侵蚀,从而成功地直接在钙钛矿表面沉积了Al₂O₃保护层。覆盖了保护层的AVA(MAPbBr₃)2钙钛矿薄膜获得了优异的热稳定性和抗水性。     

纯相Li_2MnO_3薄膜的制备及作为锂离子电池正极材料的电化学行为

采用固相烧结法制备了纯相Li2MnO3正极材料及靶材,采用脉冲激光沉积(PLD)法在氧气气氛、不同温度下沉积了Li2MnO3薄膜.通过X射线衍射(XRD)和拉曼(Raman)光谱表征了薄膜的晶体结构,采用扫描电镜(SEM)观察薄膜形貌及厚度,利用电化学手段测试了Li2MnO3薄膜作为锂离子电池正极材料性能.结果表明,PLD方法制备的纯相Li2MnO3薄膜随着沉积温度升高薄膜结晶性变好.25℃沉积的薄膜难以可逆充放电,400℃沉积的薄膜具有较高的电化学活性和循环稳定性.相对于粉末材料,400与600℃制备的Li2MnO3薄膜电极平均放电电位随着循环次数的衰减速率明显低于相应的粉体材料.     

甲胺铅碘前驱体薄膜放置过程中物质结构演变及对后续钙钛矿薄膜的影响

系统研究了甲胺铅碘(MAPbI_3)前驱体薄膜在室温大气中放置过程的物质结构变化过程,发现甲胺铅碘前驱体进一步生成了更多的MAPbI_3钙钛矿,大约220 min后MAPbI_3钙钛矿不再增加而且仍有前驱体。此外还分析了这种结构演变对后续钙钛矿薄膜热退火结果的影响,发现放置后的甲胺铅碘前驱体薄膜退火过程中的X射线衍射强度和紫外-可见吸收均比新制备的薄膜的低,而且通过原子力表面形貌图的对比发现,放置后的薄膜热退火后的薄膜晶体尺寸远小于新制备的甲胺铅碘前驱体薄膜热退火后的晶体尺寸,放置后的薄膜晶体尺寸约为0.2μm,新制备的薄膜晶体尺寸约为1.1μm。主要原因在于:甲胺铅碘前驱体薄膜由于在室温大气中放置过程中多生成了部分甲胺铅碘(MAPbI_3),因此晶体成核数量较多,晶粒数量增加,晶体存在较多缺陷,薄膜结晶度低,所以退火时X射线衍射强度和光谱强度较低,同时晶粒尺寸变小。研究为探讨甲胺铅碘钙钛矿生成机理提供了新的思路和方向,属于甲胺铅碘钙钛矿薄膜性质的基础性研究,对实际生产和工业应用有一定指导意义。     

两步互扩散法制备高性能CsPbCl3薄膜紫外光电探测器

紫外光电探测器无论在军用和民用上都有着巨大的应用前景,CsPbCl₃作为钙钛矿家族中形成能最大,化学性能稳定的成员,在可见光盲区的紫外光电探测器中有着很大潜在的应用价值。本文针对CsPbCl₃薄膜难以制备的问题,发展了一种两步互扩散溶液法,通过控制前驱体PbCl2的形貌,成功地制备了CsPbCl₃薄膜。利用扫描电镜、吸收光谱和X射线表征技术,证实了制备出的薄膜表面平整无孔洞、晶粒饱满和吸光度强。通过瞬态荧光和变激发光强的稳态荧光,揭示了薄膜具有载流子寿命长、缺陷态少等优异性能。最终构建出了响应度为0.75 A·W^?1的横向结构紫外光电探测器,为将来进一步发展高性能CsPbCl₃薄膜紫外光电探测器奠定了基础。     

Sol-gel法制备La1-xSrxMnO3巨磁电阻薄膜材料

利用sol-gel法在单晶硅Si(100)衬底上,制备了钙钛矿La_1-xSr_xMnO₃(LSMO)低织构纳米晶薄膜.考察了制备条件对LSMO成相、晶粒的粒度和表面形貌的影响,研究了其磁特性和磁电阻性能.结果表明,La_0.7Sr_0.3MnO₃薄膜磁电阻效应在相当宽的温度范围内不随温度改变,在6T磁场中室温下磁电阻比MR值可达-30%.     

基于易升华添加剂辅助合成纯相富铯(CH(NH2)2)xCs1−xPbI3 钙钛矿

钙钛矿材料化学组分是决定钙钛矿太阳能电池效率和稳定性的关键,纯无机钙钛矿CsPbI₃具有相对较好的热稳定性和光稳定性,但由于Cs⁺具有较小的离子半径而导致无机钙钛矿相不稳定。最近研究发现富铯FA_xCs_1?xPbI₃钙钛矿具有相对稳定的相结构,且可以很大程度上保持无机钙钛矿材料的热稳定性和光照稳定性,是一种非常具有前景的钙钛矿材料体系。目前这种富铯的FA_xCs_1?xPbI₃材料合成是通过引入过量有机组分FAI实现的,其中FAI一方面充当钙钛矿的掺杂剂,另一方面过量的FAI充当添加剂。由于其具有较高的升华温度,后续需要较高的温度使过量的FAI升华,实际上这在实验上很难实现对FAI升华量的精确控制。本文重点研究具有低升华温度的胺类,如碘甲胺(MAI)、碘化二甲胺(DMAI)、碘化乙胺(EAI)、碘化胺(NH₄I)和醋酸甲脒(FAAC),作为添加剂制备富铯FA_xCs_1?xPbI₃钙钛矿材料体系的可行性,这一方面可以有效降低钙钛矿薄膜的热处理温度;另一方面可拓宽的制备纯相钙钛矿成分的窗口期,这对大面积制备纯相富铯FA_xCs_1?xPbI₃钙钛矿薄膜尤为重要。结果表明MAI和DMAI可以作为合成FA_xCs_1?xPbI₃钙钛矿材料的有效添加剂,其与PbI2间较强的作用力可以促进Cs₄PbI₆的形成并有效抑制δ-CsPbI₃副产物的生成。合适的升华温度可以使薄膜在保持钙钛矿相结构的同时在较低温度升华去除过量的添加剂,最终实现在相对温和的条件下制备纯相富铯FA_xCs_1?xPbI₃钙钛矿材料。     

PbO-PbI2复合物膜转化的CH3NH3PbI3钙钛矿薄膜及其光电特性

有机-无机卤化物钙钛矿是一类优异的光电材料. 在过去四年内, 基于有机-无机卤化物钙钛矿的光电器件实现了超过15%的光电转换效率. 而有机-无机卤化物钙钛矿材料的可控制备是保证其在光电器件中应用的基础. 本文采用新的沉积方法在玻璃衬底表面制备了一种典型的有机-无机卤化物钙钛矿CH₃NH₃PbI₃薄膜. 其制备过程是: 采用超声辅助的连续离子吸附与反应法在玻璃衬底表面沉积PbO-PbI₂复合物膜, 之后与CH3NH3I蒸汽在110 ℃环境下反应, 将PbO-PbI₂复合物膜转化成CH₃NH₃PbI₃钙钛矿薄膜. 对CH₃NH₃PbI₃薄膜的微观结构, 结晶性及其光电性能等进行了表征. 结果表明, CH₃NH₃PbI₃薄膜呈晶态, 具有典型的钙钛矿晶体结构. 薄膜表面形貌均匀, 晶粒尺寸超过400 nm. 在可见光范围, CH₃NH₃PbI₃薄膜透过率低于10%, 能带宽度为1.58eV. 电学性能研究表明CH₃NH₃PbI₃薄膜表面电阻率高达1000 MΩ. 高表面电阻率表明CH₃NH₃PbI₃薄膜具有一定的介电性能, 其介电常数(ε_r)在100 Hz时达到155. 本研究提出了一种制备高质量CH₃NH₃PbI₃钙钛矿薄膜的新方法, 所得CH₃NH₃PbI₃薄膜可望在光、电及光电器件中得到应用.     

La2CuO4阴极薄膜的相转变及其对电化学性能的影响

通过调控薄膜的沉积条件,探索La₂CuO₄的晶体结构对电化学性质的影响。采用脉冲激光沉积设备在YSZ(100)单晶基底上沉积一系列La₂CuO₄薄膜,通过调节沉积时的氧压,制备了不同晶体结构的La₂CuO₄薄膜。 研究表明,沉积氧压的变化使薄膜晶体结构发生相转变,从T'相→T^*相→T相。 T'相为沿着c轴择优生长的单晶四方相,且表现出较大的界面极化电阻,在850 ℃的R_p值为2.351 Ω·cm²。 T^*相为T'相和T相的混合相,在850 ℃的电阻值介于T'相和T相之间。 T相为正交相,相对于其它相结构表现出较低的界面极化电阻,沉积氧压为26.60 Pa下制备的T相在850 ℃的电阻值为0.783 Ω·cm²,比T'相的电阻值低近67%。 并且,正交相表面有相对较高的氧空位浓度,有利于氧气的吸附和扩散,加速了阴极的氧还原反应。 因此,具有正交对称性的La₂CuO₄的电化学性质优于其它对称性。 这一结果也表明可以通过改变薄膜材料的晶体结构,降低界面极化电阻,提高阴极薄膜的电化学性能。     

The Influence of Heat Treatment Mode on the Properties of Bi4Ti3O12 Thin Films by Chemical Solution Deposition Technique

Bi₄Ti₃O₁₂ thin films were prepared by chemical solution deposition technique on n-Si(lOO). Bismuth nitrate and titanium butoxide were used as starting materials. In this paper, we used this technique to prepare Bi₄Ti₃O₁₂ thin films heat treated by both rapid annealing for 30 seconds in a rapid annealing heater and annealing in a furnace for 30 minutes, and found that the heat treat mode greatly influences the properties of the films. The crystallization temperature of the film made from rapid annealing is about 500℃, while that of the film prepared by heating in a furnace is about 550℃. X-ray diffraction pattern of the film heat treated by the former has stronger (004), (006), (008), (0010) peaks than that of the film heat treated by the latter, which suggests that the rapid annealing heat treat mode favors preferential c-oriental film. The grain size of the film obtained by rapid annealing is smaller than that of the film prepared by heating in a furnace. When the films were both annealed at 600℃,the coercive field of the film heat treated by the former is 45 kV/cm, while that of the film heat treated by the latter is 87 kV/cm.     

Fabrication of high performance thin films from metal fluorocomplex aqueous solution by the liquid phase deposition

The hetro-structured oxide thin films from metal fluorocomplex solution have been prepared by the liquid phase deposition (LPD) method. The Pt/Nb₂O₅ and Au/Nb₂O₅ composite films can be prepared from a mixed solution of niobium source, H₃BO₃, Pt(NH₃)₄Cl₂ and HAuCl₄ aqueous solutions under the ambient temperature and atmosphere. In the case of Au/SiO₂ composite film, (NH₄)₂SiF₆ solution is used as a mother solution. The Pt and Au ionic species are deposited in Nb₂O₅ and SiO₂ matrices. They are reduced to their metallic state after treatment above 200 °C. The size of dispersed particles can be controlled by heat treatment temperature. It is also clear that, gold nanoparticles are also found to interact with SiO₂, although the interaction is smaller than that with Nb₂O₅ showing the size of Au nanoparticles remain smaller in Nb₂O₅ that in SiO₂.     

不同组成和结构LaMnO_3钙钛矿负载Au催化剂的CO氧化活性

采用乙二醇溶胶-凝胶法制备了计量比LaMnO_3和非计量比LaMn_(1.2)O_3钙钛矿,并利用稀硝酸处理LaMnO_3制备得到LaMnO_3-AE,然后采用沉积沉淀法制备钙钛矿负载Au催化剂,以考察载体的结构和性质对Au的热稳定性以及催化剂活性的影响。通过X射线衍射(XRD)、透射电镜(TEM)、X射线光电子能谱(XPS)和H_2程序升温还原(H_2-TPR)等表征,发现LaMnO_3和LaMn_(1.2)O_3钙钛矿载体虽然有利于Au的分散,但是Au的热稳定性相对较差。相反,经稀硝酸刻蚀的LaMnO_3钙钛矿(LaMnO_3-AE)不利于Au的分散,但是有利于提高Au的热稳定性。在CO氧化反应中,当催化剂在低于500°C焙烧时,LaMn_(1.2)O_3钙钛矿负载Au催化剂的活性要显著高于LaMnO_3和LaMnO_3-AE负载Au催化剂的活性,而当催化剂焙烧温度升高至700°C以上时,LaMnO_3-AE负载Au催化剂却要显著优于LaMnO_3和LaMn_(1.2)O_3钙钛矿负载Au催化剂的活性。     

Mixed-phase Mesoporous TiO2 Film for High Efficiency Perovskite Solar Cells

Mesoporous scaffold structures have played great roles in halide perovskite solar cells(PSCs),due to the excellent photovoltaic performance and commercial perspective of mesoporous PSCs.Here,we reported a mixed-phase TiO2 mesoporous film as an efficient electron transport layer(ETL)for mesoporous perovskite solar cells.Due to the improved crystal phase,fihn thickness and nanopartMe size of TiO2 layer,which were controlled by varying the one-step hydrothermal reaction time and annealing time,the PSCs exhibited an outstanding short circuit photocurrent density of 25.27 mA/cm^2,and a maximum power conversion efficiency(PCE)of 19.87%.It is found that the ultra-high Jsc attributes to the excellent film quality,light capturing and excellent electron transport ability of mixed-phase TiO2 mesoporous film.The results indicate that mix-phase mesoporous metal oxide fihns could be a promising candidate for producing effective ETLs and high efficiency PSCs.     

Properties of chemical vapour deposited nanocrystalline TiO2 thin films and their use in dye-sensitized solar cells

Nanocrystalline titanium dioxide (TiO₂) thin films have been prepared using titanium(IV) isopropoxide as a precursor onto the glass and fluorine doped tin oxide coated glass substrates by chemical vapour deposition technique at 400 °C substrate temperature. X-ray diffraction study confirms the polycrystalline nature of TiO₂ with anatase phase having tetragonal crystal structure. The films are 975 nm thick and transparent having transmittance grater than 80%. Atomic force microscopy (AFM) images reveal the nanocrystalline morphology with grain size of 200 nm. The film shows a sharp absorption edge near 350 nm. Photoelectrochemical study shows that TiO₂ thin film sensitized with Brown Orange dye is found to exhibit relatively maximum I_sc and V_oc among the studied dyes. The values of fill factor (FF) and efficiency (η) for the dye-sensitized solar cell (Brown Orange dye-sensitized TiO₂) are 0.54 and 0.17%, respectively. Such films would serve as better prospects for dye-sensitized solar cells.     

空气下光诱导有机金属卤化钙钛矿薄膜的降解机理

近几年来钙钛矿材料作为新兴光伏材料取得了巨大的发展进步,但有机无机杂化钙钛矿较差的环境稳定性限制了它的大规模应用。因此深入研究钙钛矿材料的降解机制有助于开发更稳定的钙钛矿光伏器件。本文基于透射电子显微学的微观形貌观察、晶体结构及元素成分表征,详细研究了杂化钙钛矿CH_3NH_3PbI_3薄膜在光照以及空气共同作用下的降解机理。研究发现,光诱导下CH_3NH_3PbI_3薄膜会与空气中的氧气发生交互作用,同时生成六方晶态PbI_2甚至氧化为非晶态化合物PbI_(2-2x)O_x (0.4 x 0.6),而其衰减位点主要存在于薄膜与空气接触的表面。降解过程中,由于存在着挥发性分解产物(I_2,CH_3NH_2)的大量丢失,薄膜的表面会产生许多小孔洞,继而形成一种蜂窝状的介孔衰竭通道。而这种衰竭方式主要与光照下钙钛矿中光生电子与氧气结合形成超氧根自由基(O_2~(·-))有关,该基团诱导了CH_3NH_3PbI_3向PbI_2和非晶氧化态的转变。本文揭示了空气中光照诱导钙钛矿薄膜的降解机理,这将为未来设计和优化更稳定的钙钛矿太阳能电池提供全面的实验数据与理论支持。     

脉冲激光沉积LiFePO4阴极薄膜材料及其电化学性能

采用脉冲激光沉积结合高温退火的方法在不锈钢基片上制备了LiFePO₄薄膜电极. XRD谱图显示, 经650 ℃退火制得的是具有橄榄石结构的LiFePO₄薄膜. 充放电测试表明, LiFePO₄薄膜具有3.45/3.40 V的充放电平台, 与LiFePO₄粉体材料相当. 首次放电容量约为27 mAh•g^－1, 充放电循环100次后容量衰减51%.     

Low-Temperature Preparation of High-Quality Perovskite Polycrystalline Films via Crystallization Kinetics Engineering

Preparation of lead halide perovskite polycrystalline films at a low annealing temperature is highly restricted by their intrinsically large crystallization activation energy, which hinders the conversion of the precursors/intermediates to perovskites and yields as-prepared polycrystals with tiny grain sizes and terrible crystal quality. Herein, we demonstrate through in-situ, real-time spectroscopic studies that both the nucleation and crystal growth kinetics can be improved without the need for a high annealing temperature by treating the film with thiourea, as accounted for by the reduced activation energy. As a consequence, the thiourea-treated perovskite polycrystalline film exhibits larger grain sizes and greater crystallinity than the untreated one. More importantly, owing to the synergistic effect of the promoted crystallization kinetics and the passivation of surface defects, the low-temperature prepared films treated with thiourea even present more prominent photophysical properties than those fabricated by using the conventional high-temperature method. The strategy of crystallization kinetics engineering proposed in this work paves the way for fabricating high-quality perovskite polycrystalline films in a low-temperature manner.     

Solution-processed CuOx as an efficient hole-extraction layer for inverted planar heterojunction perovskite solar cells

A solution-processed CuO_x film has been successfully integrated as the hole-transporting layer (HTL) for inverted planar heterojunction perovskite solar cells (PVSCs). The CuO_x layer is fabricated by simply spin-coating a copper acetylacetonate (Cu(acac)₂) chloroform solution onto ITO glass with high transparency in the visible range. The compact and pinhole-free perovskite film with large grain domains is grown on the CuO_x film. The inverted PVSCs with the structure of ITO/CuO_x/MAPbI₃/PC₆₁BM/ZnO/Al are fabricated and show a best PCE of 17.43% under standard AM 1.5G simulated solar irradiation with a V_OC of 1.03 V, a J_SC of 22.42 mA cm^-2, and a fill factor of 0.76, which is significantly higher and more stable than that fabricated from the often used hole-transporting material PEDOT:PSS (11.98%) under the same experimental conditions. The enhanced performance is attributed to the efficient hole extraction through the CuO_x layer as well as the high-quality CH₃NH₃PbI₃ films grown on the CuO_x. Our results indicate that low-cost and solution-processed CuO_x film is a promising HTL for high performance PVSCs with better stability.     

SCN掺杂提高CsPbI3胶体量子点的稳定性和光探测性能

无机卤化物钙钛矿CsPbI₃胶体量子点因其优越的光电性能在光伏和发光器件领域中表现出极大的发展前景。然而,CsPbI₃较差的稳定性阻碍了实际应用。为此,我们采用SCN?离子掺杂CsPbI₃(SCN-CsPbI₃)量子点用于提高量子点的光学性能和稳定性。研究表明,SCN?离子掺杂不仅减少了量子点缺陷、改善了光学性能,还提高了Pb-X键能、量子点结晶质量以及钙钛矿结构稳定性。结果表明,SCN-CsPbI₃量子点的荧光量子产率(PLQY)超过90%,远高于未掺杂原始样品(PLQY为68%)。高的荧光量子产率表明量子点具有较低的缺陷态密度,这归咎于缺陷的减少。空间限制电荷和时间分辨荧光光谱等研究也证实SCN?离子掺杂减少了量子点的缺陷。此外,SCN-CsPbI₃量子点展现出很好的抗水性能,其荧光强度在水中浸泡4 h后依然保持85%的初始值。而未掺杂原始样品的荧光性能很快消失,这是因为水诱导其相变。基于SCN-CsPbI₃量子点的光电探测器表现出宽波域响应(400–700 nm),高的响应率(90 mA·W^?1)和超过1011 Jones的探测度,远高于未掺杂原始量子点探测器的性能(响应率为60 mA·W^?1和探测度为1010 Jones)。