用布喇格光纤光栅传感器测定口腔复合树脂材料光固化收缩与温度演化特性

复合树脂材料已成为重要的牙齿美容修复材料.本文利用两种布喇格光纤光栅传感器测定了口腔复合树脂材料在光固化过程中的收缩与温度演化特性.一种为普通的光纤布喇格光栅,另一种为经过了化学镀镍的光纤布喇格光栅,同时埋入复合树脂样品中,用光照射使其固化,测得光纤布喇格光栅在固化过程中温度和应力随时间的演化曲线.实验结果表明,在光固化过程中,因为聚合反应,树脂产生了强烈的收缩应力和温度变化.掌握复合树脂的光固化收缩特性和温度变化特性对不断改良材料性能以及优化口腔材料的治疗效果具有实际意义.     

绿光LED激发荧光的研究

介绍了绿光LED作为荧光激发光源的可行性。使用波长为 5 30nm的超高亮度绿光LED对荧光物质四氯四溴荧光素 (C2 0 H2 Br4 Cl4 Na2 O5)的荧光发射进行了研究。设计了小巧的荧光液池 ,将四个LED分别安置于液池侧面 ,聚光后的光束交汇于液池中同一位置以提高激发光的强度 ;使用 1kHz方波调制LED ,运用分光光度计方法 ,接收到波长为 5 70nm的荧光信号     

紫外光LED固化面光源光学系统设计

为解决紫外光LED固化面光源光斑均匀性差及辐照强度低的问题,提出一种阵列式紫外光LED固化面光源光学系统的设计方法。基于几何光学及菲涅耳定律等相关理论,完成近朗伯光型LED透镜自由曲面轮廓线的推导,结合理论公式计算出透镜阵列排布时透镜之间的最佳间距。结果表明:透镜有效控制了光线的发散,提高了阵列面光源所产生光斑的辐照强度及照度均匀度,使阵列结构更加紧凑。当光源半值角分别为27.5°和15.5°时,照度均匀度分别为95.3%和98.6%,辐照强度分别是理想朗伯型光源阵列的2.5倍和6.4倍。进一步分析了工作距离和芯片形状及其尺寸对面光源光学系统的影响,并通过实验对模拟结果进行验证,为紫外发光二极管的应用及光学系统设计提供了一定的理论依据。     

用布喇格光纤光栅传感器测定口腔复合树脂材料光固化收缩与温度演化特性

复合树脂材料已成为重要的牙齿美容修复材料.本文利用两种布喇格光纤光栅传感器测定了口腔复合树脂材料在光固化过程中的收缩与温度演化特性.一种为普通的光纤布喇格光栅,另一种为经过了化学镀镍的光纤布喇格光栅,同时埋入复合树脂样品中,用光照射使其固化,测得光纤布喇格光栅在固化过程中温度和应力随时间的演化曲线.实验结果表明,在光固化过程中,因为聚合反应,树脂产生了强烈的收缩应力和温度变化.掌握复合树脂的光固化收缩特性和温度变化特性对不断改良材料性能以及优化口腔材料的治疗效果具有实际意义.     

Control of simultaneous effects of the temperature,indium composition and the impact ionization process on the performance of the InN/InxGa1-xN quantum dot solar cells

The impact ionization in semiconductor materials is a process that produces multiple charge carrier pairs from a single excitation. This mechanism constitutes a possible road to increase the efficiency of the p-n and p-i-n solar cells junctions. Our study considers the structure of InN/InGaN quantum dot solar cell in the calculation. In this work, we study the effect of indium concentration and temperature on the coefficient $\theta$ of the material type parameter of the impact ionization process for a p(InGaN)-n(InGaN) and p(InGaN)-i(QDs-InN)-n(InGaN) solar cell. Next, we investigate the effect of perturbation such as temperature and indium composition on conventional solar cell’s (p(InGaN)-n(InGaN)) and solar cells of the third generation with quantum dot intermediate band IBSC (p(InGaN-i(QD-InN)-n(InGaN)) by analyzing their behaviour in terms of efficiency of energy conversion at the presence of the impact ionization process. Our numerical results show that the efficiency is strongly influenced by all of these parameters. It is also demonstrated that $\theta$ decreased with the increase of indium concentration and temperature which contributes to an overall improvement of the conversion efficiency.     

Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate

A novel vertical InN/InGaN heterojunction tunnel FET with hetero T-shaped gate as well as polarization-doped source and drain region (InN-Hetero-TG-TFET) is proposed and investigated by Silvaco-Atlas simulations for the first time. Compared with the conventional physical doping TFET devices, the proposed device can realize the P-type source and N-type drain region by means of the polarization effect near the top InN/InGaN and bottom InGaN/InN heterojunctions respectively, which could provide an effective solution of random dopant fluctuation (RDF) and the related problems about the high thermal budget and expensive annealing techniques due to ion-implantation physical doping. Besides, due to the hetero T-shaped gate, the improvement of the on-state performance can be achieved in the proposed device. The simulations of the device proposed here in this work show I_ON of 4.45×10^-5 A/μm, I_ON/I_OFF ratio of 10¹³, and SS_avg of 7.5 mV/dec in InN-Hetero-TG-TFET, which are better than the counterparts of the device with a homo T-shaped gate (InN-Homo-TG-TFET) and our reported lateral polarization-induced InN-based TFET (PI-InN-TFET). These results can provide useful reference for further developing the TFETs without physical doping process in low power electronics applications.     

Investigating carbon materials for use as the electron emission source in a parallel electron-beam lithography system

A microelectronic parallel electron-beam lithography system using an array of field emitting microguns is currently being developed. This paper investigates the suitability of various carbon based materials for the electron source in this device, namely tetrahedrally bonded amorphous carbon (ta-C), nanoclustered carbon and carbon nanotubes.Ta-C was most easily integrated into a gated field emitter structure and various methods, such as plasma and heavy ion irradiation, were used to induce emission sites in the ta-C. However, the creation of such emission sites at desired locations appeared to be difficult/random in nature and thus the material was unsuitable for this application. In contrast, nanoclustered carbon material readily field emits with a high site density but the by-products from the deposition process create integration issues when using the material in a microelectronic gated structure.Carbon nanotubes are currently the most promising candidate for use as the emission source. We have developed a high yield and clean (amorphous carbon by-product free) PECVD process to deposit single free standing nanotubes at desired locations with exceptional uniformity in terms of nanotube height and diameter. Field emission from an array of nanotubes was also obtained.     

基于中性水凝胶/取向碳纳米管阵列高电压柔性固态超级电容器

随着科技发展和时代进步,发展质轻便携、安全环保的高性能储能器件变得日趋重要,对柔性固态超级电容器的研究也应运而生.柔性电极材料及电解质的选用是设计柔性固态超级电容器的关键因素,近年来一直是研究的热点.考虑到环境污染及实际需求问题,本文采用中性凝胶电解质对具有高比表面积、良好导电性及取向性的碳纳米管阵列进行包埋处理,所形成的柔性复合薄膜作为电极材料,设计制备三明治结构的柔性超级电容器件.通过改变凝胶电解质中所加入的无机盐电解质种类,调控器件的电化学储能性质.最终在聚乙烯醇PVA-NaCl作为凝胶电解质时,整个器件比容量最高达104.5 mF·cm~(–3),远高于有机离子凝胶与碳管阵列形成的复合器件以及无规分布的碳纳米管与水凝胶形成的复合器件,同时获得了0.034 mW·h·cm~(–3)的最大能量密度,并且具有良好的倍率性能、循环稳定性及抑制自放电的效果,并在高电压1.6 V下依然保持良好的化学稳定性.这种中性凝胶/碳管阵列复合超级电容器件不仅满足了绿色安全、柔性便携的要求,未来在医学可植入器件等领域也具有很好的应用前景.     

LED灯具道路照明效果模拟与分析

为适应半导体产业的迅猛发展和环保节能的迫切要求,将LED作为一种新的能源方式应用到照明产业中。选取几种有代表性的LED路灯作为研究对象,根据各自不同形状的配光曲线,利用照明仿真软件Dialux对这些LED灯具在不同的布灯方式下在道路上的光照度分布情况进行模拟和分析比较,总结出适合于道路照明的LED路灯应具有的配光曲线特征,为LED灯具设计提供参考。     

菲涅尔透镜聚焦声泳打印装置设计及实验研究*

针对现有的喷墨打印技术需根据喷印材料的特性定制而较难直接用于不同材料打印的问题,设计了一种基于菲涅尔透镜聚焦的声泳打印装置,该装置由超声发生器、超声换能器、菲涅尔透镜以及供液系统组成。首先,利用COMSOL软件模拟液滴在声辐射力作用下的滴落过程,并分析了超声发生器功率、喷嘴到基底距离、菲涅尔透镜厚度等参数对声场压力分布的影响,以及声场压力、喷嘴直径及材料粘度对液滴喷射过程的影响。其次,采用构建的声泳打印装置进行喷射成滴实验,通过调整超声发生器输出功率实现了不同粘度的聚乙二醇溶液的喷射以及UV胶的喷射。实验结果表明：该微滴喷射系统能产生一致性较好的微滴,喷印出的微透镜尺寸波动范围在2%以内,证明了该装置的稳定性以及实现了不同材料微滴喷射的可行性。     

SiC材料及器件研制的进展

作为第三代的半导体材料－ＳｉＣ具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点,在高频、大功率、耐高温、抗辐照的半民体器件及紫外探测器和短波发光二级管等方面具有广泛的应用前景,文章综述了半导体ＳｉＣ材料生长及其器件研制的概况。     

Propagation based X-ray phase-contrast imaging technique for the microstructure analysis of biological soft tissues

X-ray phase-contrast imaging (PCI) technique is an emerging method for the study of the biological soft tissues, carbon composite materials, polymers, low-Z material science, etc. We have set up an experimental facility using a combination of X-ray CCD detector and a microfocus X-ray source. We demonstrate that sufficient contrast and intensity can be achieved for biological soft tissues with the X-ray source in the standard operation mode. Based on the cylindrical fiber and pigeon feathers imaging experiments, the boundary information was observed successfully in the light element materials and extremely low absorption material. This shows that X-ray phase-contrast imaging in this area will have a brilliant future.     

基于THz-TDS的陶瓷纤维复合材料缺陷检测分析

新型陶瓷纤维复合材料由短切氧化硅纤维及其胶合物经高温烧结得到的一种轻质多孔材料,材料微观结构特性直接影响着宏观结构特性和功能特性.该类材料的孔隙度分布在84％ ～95％ 之间,微观孔径主要集中在100μm范围内,偶尔有少量纳米孔.陶瓷纤维复合材料以其耐高温、低密度、高比强和抗烧蚀等优异性能在超高声速飞行器外层隔热部件得...     

InGaN: An overview of the growth kinetics,physical properties and emission mechanisms

This article reviews the fundamental properties of InGaN materials. The growth kinetics associated with the growth parameters, such as growth temperatures, V/III ratios, and growth rates which influence the quality of the InGaN epilayers, are briefly described. An overview of the properties of the InGaN alloys, such as the optical, structural and electrical characteristics, is presented. The design and fabrication of novel optoelectronic device structures require an accurate knowledge of the band gap as a function of alloy composition; therefore, attention is paid to Vegard’s law and the bowing parameter; in addition, the major factors leading to the uncertainties of the bowing parameter of InGaN are addressed. Apart from that, the determination of indium composition by X-ray diffraction (XRD) using different assumptions and various equations are summarized. The erroneous measurements of the indium composition by using this technique are also described. Finally, different emission mechanisms of the strained InGaN quantum wells proposed by different groups of researchers are also discussed.     

光纤照明用LED耦合装置设计

光纤照明用LED光源耦合装置多采用透镜组,其汇聚光斑小,但透镜组光能损失大。针对LED光源发光特性及聚合物光纤孔径大的特点,提出LED灯珠侧式安装和反射器切割移位优化法,设计一种基于椭圆反射器的光纤照明用LED耦合装置。运用John OFarrell的逼近算法计算出不同偏心率的椭圆反射器结构参数,结合光纤光学参数仿真比较耦合光效,得到一组偏心率和光纤直径匹配的高效耦合装置结构参数,并运用该方法设计了一款光纤直径10 mm、数值孔径0.5的光纤照明用LED耦合装置,其理想耦合光效达93.35%。     

基于紫外LED阵列光催化降解抗生素的研究

抗生素的大量使用对生态环境造成巨大的影响,光催化技术具有操作简单且无二次污染等特点被广泛应用于污染物的降解。在光催化降解抗生素过程中,光源对其降解效率至关重要,与传统的汞灯催化光源相比,紫外LED技术具有更高的能源效率及更低的功耗,使光催化工艺发生了巨大的变化。首先建立基于紫外LED阵列的光催化平台,采用光栅光谱仪和紫外照度计对LED阵列光源光谱特性及装置内光场分布进行测量分析。结果显示紫外LED光源波长介于265～295 nm之间,其主波长为275 nm,由于光场叠加效果,光照强度随着装置径向位置距离的增大而明显增大,装置轴向位置光照强度分布较为均匀;其次通过三维超景深显微镜、UV-Vis光谱测量技术对P25型光催化剂的粒子结构进行表征分析,同时使用半导体求导公式对TiO₂粉末进行禁带分析,结果显示TiO₂为球形,由于空气中相对湿度过大,水在TiO₂微粒表面的润湿性加强了微粒间的粘附力,因此有团聚现象产生,其禁带宽度为3.1 eV;最后以紫外LED阵列和高压汞灯为催化光源,P25型TiO₂为催化剂分别对甲基橙、磺胺类抗生素进行光催化降解,使用紫外-可见光分光光度计测量降解过程中的吸收光谱曲线,进而对抗生素降解率进行分析。结果表明,甲基橙和磺胺二甲嘧啶在紫外LED阵列为光源条件下均能够被降解,分别经过160和240 min的催化降解过程后,降解率分别达到70%和36%,符合一级动力学方程,经计算LED阵列光源与汞灯对甲基橙的降解动力学常数分别为-0.007 5和-0.113 5 min-1,对磺胺二甲嘧啶的降解动力学常数分别为-0.001 9和-0.019 4 min-1。因此对甲基橙和磺胺二甲嘧啶进行降解时,汞灯降解速率高于紫外LED阵列;由于紫外LED阵列和汞灯系统在催化降解污染物过程中功率和其与反应器中轴线距离不同,对两种光源的抗生素降解效率建立评价方法,即对紫外LED和汞灯以单位功率为标准进行距离降解效率分析,对于甲基橙,汞灯在单位功率下的距离降解效率高于紫外LED,但对于抗生素,紫外LED阵列的距离降解效率明显高于汞灯。依据以上各类光谱分析和应用结果,紫外LED阵列是一种有竞争力的光催化应用替代光源,此技术的广泛应用为抗生素的降解提供新途径。     

Enhanced performance of InGaN light-emitting diodes with InGaN and composition-graded InGaN interlayers

The effects of InGaN light-emitting diodes (LEDs) with InGaN and composition-graded InGaN interlayers in the space of multiple quantum wells and electron blocking layer are studied numerically. The electrostatic field, energy band diagrams, carrier concentrations, light–current–voltage performances, and internal quantum efficiency (IQE) are investigated. Simulation results show that the light output power and IQE are both largely improved over the conventional LED structure due to the improvement in hole injection efficiency and electron blocking capability, especially for the LED with composition-graded InGaN interlayer.     

Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters

We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet (374 nm) to green (536 nm) with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron-hole wave function remains at a high level (larger than 90%). Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.     

负反馈提高高阻恒流源驱动的LED的输出光场噪声压缩量

研究高阻恒流源驱动的ＬＥＤ所发射光场的粒子数噪声压缩与ＬＥＤ电、光量子效率，漏电流效应，光子流涨落负反馈及噪声频率的关系。指出：在高阻恒流ＬＥＤ中引入适量光子流涨落负反馈能产生粒子数压缩态光场并极大地提高粒子数噪声压缩，其理想压缩仅受限于高阻恒流源残余噪声、ＬＥＤ漏电流效应和量子效率。 关键词：     

基于等离激元多重杂化效应的光吸收结构

近年来,以聚合物为代表的高分子材料由于具有比其他光吸收材料(如半导体材料、碳基材料以及贵金属纳米材料)更好的柔性和粘弹性而受到广泛关注.本文基于等离子体再聚合技术和磁控溅射工艺在聚合物材料层上制备了具有等离激元多重杂化效应的光吸收结构,该结构具有宽谱高吸收特性.该结构的制备工艺简单易行,对不同聚合物材料具有通用性,在光学器件领域具有广泛的应用前景.