Low-macroscopic field emission from nanocrystalline Al doped SnO<Subscript>2</Subscript> thin films synthesized by sol–gel technique

We have observed low-macroscopic field electron emission from wide bandgap nanocrystalline Al doped SnO₂ thin films deposited on glass substrates. The emission properties have been studied for different anode-sample spacings and for different Al concentrations in the films. The turn-on field and approximate work function were calculated and we have tried to explain the emission mechanism from this. The turn-on field was found to vary in the range 5.6–7.5 V/μm for a variation of anode sample spacing from 80–120 μm. The turn-on field was also found to vary from 4.6–5.68 V/μm for a fixed anode-sample separation of 80 μm with a variation of Al concentration in the films 8.16–2.31%. The Al concentrations in the films have been measured by energy dispersive X-ray analysis. Optical transmittance measurement of the films showed a high transparency with a direct bandgap ∼3.98 eV. Due to the wide bandgap, the electron affinity of the film decreased. This, along with the nanocrystalline nature of the films, enhanced the field emission properties. PACS 81.20.Fw; 61.10.-i; 79.70.+q     

Field-emission enhancement of molybdenum oxide nanowires with nanoprotrusions

The field-emission properties of molybdenum oxide nanowires grown on a silicon substrate and its emission performance in various vacuum gaps are reported in this article. A new kind of molybdenum oxides named nanowires with nanoscale protrusions on their surfaces were grown by thermal vapor deposition with a length of ~1 μm and an average diameter of ~50 nm. The morphology, structure, composition and chemical states of the prepared nanostructures were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). According to XRD, XPS, and TEM analyses, the synthesized samples were composed of MoO₂ nanowires formed over a thin layer of crystalline Mo₄O₁₁. TEM observation revealed that these nanowires have some nanoscale protrusion on their surface. These nanoprotrusions resulted in enhancement of field-emission properties of nanowires comprising nanoprotrusions. The turn-on emission field and the enhancement factor of this type of nanostructures were measured 0.2 V/μm and 42991 at the vacuum gap of 300 μm, respectively. These excellent emission properties are attributed to the special structure of the nanowires that have potential for utilizing in vacuum nanoelectronic and microelectronic applications.     

Structure and phase composition of a chromium-silicon system modified by high-current electron beams

The results of studies of the structure-phase state of a chromium-coated silicon substrate system’s subsurface layer treated with low-energy high-current electron beams, 50–200 μs in duration and with an energy density of 15 J/cm², are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2–38 μm, chromium-enriched silicon dendrites, chromium disilicide CrSi₂, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ∼50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer.     

Electrochemical fabrication of arrayed alumina nanowires showing strong blue emission

Arrayed alumina nanowires having controlled uniform diameters of 30–90 nm and lengths of 2–10 μm have been fabricated electrochemically with a high yield using two-step anodized aluminum oxide membranes as templates. The observed photoluminescence of the arrayed alumina nanowires arising from the emission of F⁺ and F centers is strong and blue-shifted compared with that of porous alumina membranes due to the structural difference of Al₂O₃. Our synthesized alumina nanowires are also found to be chemically more stable than the templates.     

Structure,transport and field-emission properties of compound nanotubes: CN<Subscript>x</Subscript> vs. BNC<Subscript>x</Subscript> (<Emphasis Type="Italic">x</Emphasis><0.1)

Transport and field-emission properties of as-synthesized CN_x and BNC_x (x<0.1) multi-walled nanotubes were compared in detail. Individual ropes made of these nanotubes and macrofilms of those were tested. Before measurements, the nanotubes were thoroughly characterized using high-resolution and energy-filtered electron microscopy, electron diffraction and electron-energy-loss spectroscopy. Individual ropes composed of dozens of CN_x nanotubes displayed well-defined metallic behavior and low resistivities of ∼10–100 kΩ or less at room temperature, whereas those made of BNC_x nanotubes exhibited semiconducting properties and high resistivities of ∼50–300 MΩ. Both types of ropes revealed good field-emission properties with emitting currents per rope reaching ∼4 μA(CN_x) and ∼2 μA (BNC_x), albeit the latter ropes se- verely deteriorated during the field emission. Macrofilms made of randomly oriented CN_x or BNC_x nanotubes displayed low and similar turn-on fields of ∼2–3 V/μm. 3 mA/cm² (BNC_x) and 5.5 mA/cm² (CN_x) current densities were reached at 5.5 V/μm macroscopic fields. At a current density of 0.2–0.4 mA/cm² both types of compound nanotubes exhibited equally good emission stability over tens of minutes; by contrast, on increasing the current density to 0.2–0.4 A/cm², only CN_x films continued to emit steadily, while the field emission from BNC_x nanotube films was prone to fast degradation within several tens of seconds, likely due to arcing and/or resistive heating. Received: 29 October 2002 / Accepted: 1 November 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +81-298/51-6280, E-mail: golberg.dmitri@nims.go.jp     

Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires

Field emission studies of WO_2.72 nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler–Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a current density of ∼8.3×10⁶ μA/cm² can be drawn at an applied electric field of 2 V/μm. The field enhancement factor is 33025, while the turn-on field is only 1.4 V/μm. The emission current-time plot recorded at the pre-set value of emission current of 1 μA over a period of more than 3 h exhibits an initial increase and a subsequent stabilization of the emission current. The results reveal that the WO_2.72 nanowire emitters synthesized by the solvothermal method are promising cathode materials for practical applications.     

Ultra-sharp α-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanoflakes: growth mechanism and field-emission

We report the synthesis of single-crystalline α-Fe₂O₃ nanoflakes from a simple Fe–air reaction within the temperatures range of 260–400 °C. The nanoflakes synthesized at the lowest temperature (260 °C) in this work show an ultra-sharp morphology: 5–10 nm in thickness, 1–2 μm in length, 20 nm in base-width and around 5 nm at the tips; successfully demonstrate the promising electron field emission properties of a large-scaled α-Fe₂O₃ nanostructure film and exhibit the potential applications as future field-emission (FE) electron sources and displays (FEDs). The formation and growth of α-Fe₂O₃ nanostructures were discussed based on the surface diffusion mechanism. PACS 79.60.Jv; 79.70.+q; 77.84.Bw     

Optical properties of silicon-silicide nanoheterostructures grown by consecutive plasma-epitaxy synthesis

Consecutive plasma-epitaxial synthesis on silicon wafers is used for the first time to fabricate monolithic nanoheterostructures with embedded nanocrystals (NC) of chromium disilicide (Si–NC CrSi₂–Si). It is found that, initially, nanoislands form on the surface and within a coating layer of silicon, followed by the formation of small (10–15 nm) nanocrystals of semiconducting chromium disilicide (CrSi₂) at a high occupation density ((2–3)⋅10¹¹ cm^–2). During formation of silicon-silicide-silicon heterostructures, CrSi₂ nanocrystallites “float up” into the near surface area of the covering silicon layer.     

High-quality GaN nanowires synthesized using a CVD approach

High-quality GaN nanowires were synthesized on a large-area Si substrate by direct reaction of gallium with ammonia using InCl₃ as a catalyst. The morphology and microstructure of the resulting products were characterized using a field-emission scanning electron microscope (SEM), a high-resolution transmission electron microscope, and X-ray diffraction (XRD). XRD and electron diffraction revealed that the nanowires are of a hexagonal GaN phase with the wurtzite structure. The SEM study showed that the nanowires are straight and have a smooth morphology with lengths up to 500 μm. The present results reveal that InCl₃ is an optimal catalyst in GaN nanowire production. Received: 2 April 2002 / Accepted: 12 April 2002 / Published online: 19 July 2002     

Large-scale synthesis of In2O3 nanowires

In₂O₃ nanowires have been successfully fabricated on a large scale from indium particles by thermal evaporation at 1030 °C. The as-synthesized products were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). SEM and TEM images show that these nanowires are uniform with diameters of about 60–120 nm and lengths of about 15–25 μm. XRD and selected-area electron diffraction analysis together indicate that these In₂O₃ nanowires crystallize in a cubic structure of the bixbyite Mn₂O₃ (I) type (also called the C-type rare-earth oxide structure). The growth mechanism of these nanowires is also discussed. Received: 29 June 2001 / Accepted: 28 September 2001 / Published online: 20 December 2001     

Low-threshold field electron emission of Si micro-tip arrays produced by laser ablation

Low-threshold field electron emission (FEE) is reported for periodic arrays of micro-tips produced by laser ablation of Si wafers. The best samples show emission at threshold fields as low as 4–5 V/μm for n-type Si substrates and of 1–2 V/μm for p-doped Si substrates, as measured with a flat-screen technique. Auger electron spectroscopy and X-ray electron spectroscopy reveal island-like deviation of the SiO₂ stoichiometry on the tip surfaces, with lateral dimensions of less than 100 nm. Microscopic studies using a special field-emission STM show that the emission originates from well-conducting regions of sub-micron size. The experimental data suggest FEE from the tip arrays by a geometric field enhancement of both the individual micro-tip and the narrow conducting channels in the tip body. Received: 3 May 2002 / Accepted: 1 July 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +7-095/135-82-34, E-mail: shafeev@kapella.gpi.ru     

Field emission from nonaligned SiC nanowires

β-SiC nanowires with an average diameter of 8-20 nm were synthesized using a simple thermal evaporation of SiO powders onto activated carbon fibers. Field emission was investigated based on the SiC nanowires deposited on a platinum film. A low turn-on field of 3.1-3.5 V μm⁻¹ was measured at an anode-sample separation of 100-140 μm. This type of SiC nanowires can be applied as field emitters in displays as well as vacuum electronic devices.     

ZnO nanorod micropatterning via laser-induced forward transfer

We report a method for micropatterning (25–900 μm² pixel size) of ZnO nanorods onto a silicon substrate via a low-temperature (overall under 100 °C) two-step process, involving a laser-based direct-write technique (laser-induced forward transfer) and sequential chemical growth. The rods produced via this route are aligned in the [0001] crystal direction. Photoluminescence shows, next to the band-gap emission, strong green-yellow emission centred at ∼570 nm. Additionally, the rod arrays show excellent field-emission properties with a threshold field for emission of 5 V/μm. PACS 61.82.Rx; 81.10.Dn; 81.16.Mk     

Magnetism and structural phase transitions in LiTmF4 powders

The field (0–5.5 T) and temperature (2–300 K) dependences of the magnetization of LiTmF₄ powders with particle sizes of 1 μm and 56–400 μm are investigated experimentally and theoretically. It is concluded that a transition layer exists between the thulium ions in the bulk and the ions at the surface. Two magnetic-field-induced structural phase transitions are observed at low temperatures, and the temperature dependence of the critical magnetic fields is established. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 247–250 (25 August 1997)     

Morphological effects on the field emission characteristics of zinc oxide nanotetrapods films

The direct growth of a tetrapod-like ZnO nanostructure has been accomplished by using a thermal oxidation method without any catalysts. Studies on the field emission properties of the ordered ZnO nanotetrapods films found that the shape of the ZnO nanotetrapods has considerable effect on their field emission properties, especially the turn-on field and the emission current density. Compared with the rod-like legs ZnO nanotetrapods, the nanotetrapods with acicular legs have a lower turn-on field of 2.7 V/μm at a current density of 10 μA/cm², a high field enhancement factor of 1830, and an available stability. More importantly, the emission current density reached 1 mA/cm² at a field of 4.8 V/μm without showing saturation. The results could be valuable for using the ZnO nanostructure as a cold-cathode field-emission material.      

Compact X-ray radiograph based on a plasma gun

The results of the experiments on the formation of a plasma emitter with small spatial dimensions for pulsed radiography in the soft X-ray spectral range are presented. Emitting hot plasma was formed as a result of compression of the plasma jet by a current pulse with amplitude I _m = 215 kA and rise time T _fr = 200 ns. For the jet formation, we used a plasma gun based on the arc discharge (I _m = 8.5 kA and T _fr = 6 μs) initiated by breakdown over the surface of a dielectric in vacuum. The experiments were carried out with aluminum, tin, copper, and iron plasma jets. A single emitter, i.e., point Z-pinch (PZ-pinch), was formed when an interelectrode gap of a high current generator of 1.3–1.5 mm was used. The smallest spatial dimensions of the emitting region were obtained with the use of aluminum and tin. For a tin jet, the diameter of the emitting region was 7 ± 2 μm and its height was 17 ± 2 μm. The emission pulse duration at half-height was 2–3 ns. The total emission yield per pulse in the spectral range 1.56–1.90 keV was 30–50 mJ for the aluminum pinch and 10–30 mJ for the tin pinch. The developed method makes it possible to carry out radiographic examination of microobjects (including biological ones) 1–1000 μm in thickness, with spatial (10–20 μm) and time (2–3 ns) resolution.     

PLD synthesis of GaN nanowires and nanodots on patterned catalyst surface for field emission study

Patterned gallium nitride nanowires and nanodots have been grown on n-Si (100) substrates by pulsed laser deposition. The nanostructures are patterned using a physical mask, resulting in regions of nanowire growth of different densities. The field emission (FE) characteristics of the patterned gallium nitride nanowires show a turn-on field of 9.06 V/μm to achieve a current density of 0.01 mA/cm² and an enhanced field emission current density as high as 0.156 mA/cm² at an applied field of 11 V/μm. Comparing the peak FE current densities of both the nanowires and nanodots, the peak FE current density of nanowires is around 700 times higher than that of the peak FE current density of nanodots since nanodots have a lower aspect ratio compared to nanowires. The field emission results indicate that, besides density difference, crystalline quality as well as the low electron affinity of gallium nitride, high aspect ratio of gallium nitride nanostructures will greatly enhance their field emission properties.     

Grain size effect on the giant dielectric and nonlinear electrical behaviors of Bi1/2Na1/2Cu3Ti4O12 ceramics

Single phase Bi_1/2Na_1/2Cu₃Ti₄O₁₂ (BNCTO) ceramics with different grain sizes (1.4–4.3 μm) are prepared by a modified Pechini method to investigate their giant dielectric and nonlinear electrical behaviors. The results show that the giant dielectric and nonlinear electrical behaviors are strongly dependent on grain size. With the increment of grain size, the dielectric constant increases monotonically from 14110 (for 1.4 μm sample) to 36183 (for 4.3 μm sample) at 1 kHz, in accompaniment with the breakdown voltage reducing from 112.5 to 43.2 V/mm and the nonlinear coefficient reducing from 4.9 to 3.4. On the basis of the internal barrier layer capacitor (IBLC) model and the IBLC model of Schottky-type potential barrier, an interpretation of the grain size effect on the giant dielectric and nonlinear electrical behaviors is presented.     

Field emission from single-walled carbon nanotubes aligned on a gold plate using a self-assembly monolayer

Field emission from single-walled carbon nanotubes (SWNTs) aligned on a patterned gold surface is reported. The SWNT emitters were prepared at room temperature by a self-assembly monolayer technique. SWNTs were cut into sub-micron lengths by sonication in an acidic solution. Cut SWNTs were attached to the gold surface by the reaction between the thiol groups and the gold surface. The field-emission measurements showed that the turn-on field was 4.8 V/μm at an emission current density of 10 μA/cm². The current density was 0.5 mA/cm² at 6.6 V/μm. This approach provides a novel route for fabricating CNT-based field-emission displays. Received: 3 May 2002 / Accepted: 6 May 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +82-54/279-8298, E-mail: ce20047@postech.ac.kr